• Journal of the Korean Applied Science and Technology
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• v.17 no.1
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• pp.29-35
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• 2000

In this study, ultra-thin films of (N-docosyl quinolinium)-TCNQ(1:2) complex were prepared on the hydrophilic substrate by Langmuir-Blodgett(LB) technique. The characteristics of ${\pi}-A$ isotherms were studied to find optimum conditions of deposition by varying temperature of subphase, compression speed of barrier and amount of spreading solution. Using UV-vis spectra, capacitance and thickness, deposition of LB films was confirmed together with the thickness of the naturally oxidized aluminum film inside a device and dielectric constant of (N-docosyl quinolinium)-TCNQ(1:2) complex. The dielectric constant of LB film was about $4.59{\sim}5.58$. The electrical properties of (N-docosyl quinolinium)-TCNQ(1:2) complex were investigated at room temperature. The conductivity of this film measured by the direction of either vertical or horizontal axis was found to have a quite different value.

• Textile Coloration and Finishing
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• v.24 no.1
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• pp.79-90
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• 2012

This study surveys the characteristics of the PU/MWNT foaming film according to foaming conditions. For this purpose, firstly, 16 kinds of PU/MWNT forming films were prepared with 4 kinds of dispersion solutions (IPA/MWNT, DMF/MWNT, MEK/MWNT, and Toluene/MWNT) and 4 kinds of blowing agents (organic I, organic II, capsule, and inorganic). The electrical resistivity of these PU/MWNT foaming films according to the dispersion solutions and blowing agents were analysed and discussed with surface profile and cell morphology of measured by SEM. And secondly, 24 kinds of PU/MWNT foaming films were also prepared with 2 kinds of IPA dispersion solution contents and 3 kinds of blowing agents with variation of the blowing temperatures and film thickness. The physical properties of the PU/MWNT foaming films such as electrical resistivity (surface and volume) and triboelectricity with cell morphology were measured and discused through the quantities of IPA, blowing agent added and also physical conditions(temperature, thickness so on) for establishing optimum foaming conditions with good electrostatic dissipation.

• Bulletin of the Korean Chemical Society
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• v.19 no.5
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• pp.549-553
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• 1998

The structure and layer distribution of cadmium arachidate Langmuir-Blodgett film were analyzed by the small angle X-ray reflectivity measurements using synchrotron radiation. Y-to X type transition was ocurred during the 39th passage of deposition of cadmium arachidate. Based on the measurement of the consumed area of the monolayer, it was determined that about 27.5 layer was deposited. Using the synchrotron X-ray, the reflectivity profile of cadmium arachidate LB film over the wide range of grazing angle was obtained. The X-ray reflectivity profile was analyzed using the recursion formula. By fitting the location and dispersion of the subsidiary maxima between the Bragg peaks of the measured reflectivity profile with that of the calculated reflectivity profile, the average thickness and the distribution of layer thickness were evaluated. The genetic algorithm was adopted to the fitting of reflectivity profile to evaluate the optimum value of the number distribution of layer. Based on the morphology measurement with an atomic force microscopy (AFM), the domain structure and mean roughness of LB films were obtained. The mean roughness value calculated based on the number of layer distribution obtained from the measurement by AFM is consistent with that obtained from X-ray reflectivity analysis.

• Korean Journal of Optics and Photonics
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• v.8 no.5
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• pp.395-402
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• 1997

We have obtained the optimum thickness of anti-reflection(AR) coating on one of facets of a $\1.55mu\textrm{m}$ InGaAsP MQW FP semiconductor laser by in-site monitoring of the light emitted from the rear facet during the film deposition on the fore facet. The optimum thickness of $SiO_x$ thin film whose refractive index is 1.85 was found to be 188 nm. The reflectivity of the coated facet was calculated by the threshold current ratio of before and after AR coating, which was obtained from exprimental data, and it was about 2$\times$ $10^{-4}$. The results show that the output power is increased by 87% at bias current 60 mA, the slope efficiency is increased by 3.4 times, and the threshold current is increased by 2.64 times. By in-situ depositing of the $Si/SiO_2$ thin film HR coating on the rear facet, the output power was increased by 160% than before the AR and HR coatings, the slope efficiency was increased by 3.8 times, the threshold current was increased by 1.07 times, which is similar to the value of before AR coating. Due to the AR and HR coatings the output light power characteristics were enhanced.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.781-784
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• 2005

Twenty four types of thermopile for micro spectrometer infrared sensors were fabricated on low-stress $Si_3N_4$ membranes with $1.2{\mu}m-thickness$ using MEMS technology. Poly-Si thin film with thickness of 3500 ${\AA}$ as the first thermocouple material, was deposited by LPCVD method. And aluminum thin film with thickness of 6000 ${\AA}$ as the second thermocouple material, was deposited by sputtering method. Thermopile were designed and fabricated for optimum conditions by five parameters of thermocouple numbers (16 ${\sim}$ 48), thermocouple line widths (10 ${\mu}m$ ${\sim}$ 25 ${\mu}m$), thermocouple lengths (100 ${\mu}m$ ${\sim}$ 500 ${\mu}m$), membrane areas ($1^2\;mm^2$ ${\sim}$ $2.5^2\;mm^2$) and junction areas (150 ${\mu}m^2$ ${\sim}$ 750 ${\mu}m^2$), respectively. Electromotive forces of fabricated thermopile were measured 1.1 mV ${\sim}$ 7.4 mV at $400^{\circ}C$. It was thought that measurement results could be used for thermopile infrared sensors optimum structure for micro spectrometers.

• Journal of Adhesion and Interface
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• v.7 no.3
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• pp.16-25
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• 2006

Water vapour permeable and water resistant film was laminated to made footwear woven fabric and non-woven fabrics by screen type with thermosetting reactive hot melt adhesive. Optimum conditions of each process were investigated, and the properties of film laminated fabric with optimum conditions are evaluated. The results are as follows. Thermosetting reactive polyurethane hot melt is retain proper heat resistance differently thermoplastic hot melt. Optimum melting adhesive process conditions are as follows ; drum temperature $95^{\circ}C$, hose temperature $97^{\circ}C$, feeding pipe temperature $100^{\circ}C$, screen temperature $105^{\circ}C$, pressure of opposite roller $1kgf/cm^2$, pressure of laminating roller $3kgf/cm^2$, finishing speed 15 m/min, melting temperature $120^{\circ}C$, cooling time 20 s, pressing temperature $130^{\circ}C$, pressing time 30 s. As the thickness of film was increased, the water vapour permeability was decreased but water resistance was increased, and the effect of film is dominant over all the others in the air permeability.

• Journal of the Korean institute of surface engineering
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• v.42 no.1
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• pp.21-25
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• 2009

Using an evaporation system, $SiO_2$ was deposited as a buffer layer between a PET substrate and a ITO layer and then ITO/$SiO_2$/PET layers were annealed for 1.5 hours at the temperature of $180^{\circ}C$. Adhesion and electro-optical properties of ITO films were studied with thickness variance of a $SiO_2$ buffer layer. As a result of introduction of the $SiO_2$ buffer layer, sheet resistance and resistivity increased and a ITO film with optimum sheet resistance ($529.3{\Omega}/square$) for an upper ITO film of resistive type touch panel could be obtained when $SiO_2$ of $50{\AA}$ was deposited. And it was found that ITO films with $SiO_2$ buffer layer have higher transmittance of $88{\sim}90%$ at 550 nm wavelength than ITO films with no buffer layers and the transmittance was enhanced as $SiO_2$ thickness increased from $50{\AA}$ to $100{\AA}$. Adhesion property of ITO films with $SiO_2$ buffer layers became better than ITO films with no buffer layers and this property was independent of $SiO_2$ thickness variance ($50{\sim}100{\AA}$). By depositing a $SiO_2$ buffer layer of $50{\AA}$ on the PET substrate and sputtering a ITO thin film on the layer, a ITO film with enhanced adhesion, electro-optical properties could be obtained.

• Journal of Pharmaceutical Investigation
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• v.29 no.2
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• pp.127-136
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• 1999

In order to eliminate demerits of conventional dosage forms, dipotassium glycyrrhizate was formulated as a slim mucoadhesive film type dosage form. The mucoadhesive drug layer gel containing dipotassium glycyrrhizate was prepared using $Noveon^{\circledR}$ AA-1, hydroxypropylcellulose-M, ethylcellulose N 100 and citric acid, and the protective layer gel by using ethylcellulose N 100, $Eudragit^{\circledR}$ RS and castor oil. The viscosity of drug layer gel of mucoadhesive film was enhanced as the increased amount of $Noveon^{\circledR}$ AA-1 or hydroxypropyl cellulose-M. The drug content was unifonnly $1160{\pm}14.6\;{\mu}g$, and was varied within 3.5%. The optimum film dosage form showed a good fluidity and malleability of drug layer, with 179 g of thickness, pH 5.7, 411 min of in vitro adhesion time and 172 g in gravity adhesive strength. The release time of drug from the mucoadhesive film was significantly shorter but was delayed when polymers such as ethylcellulose was added. From these results, the new mucoadhesive film may be effective for the treatment of aphthous stomatitis.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.2
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• pp.129-135
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• 2023

An analytical threshold voltage model is presented to observe the change in threshold voltage shift ΔV_th of a junctionless double gate MOSFET using ferroelectric-metal-SiO₂ as a gate oxide film. The negative capacitance transistors using ferroelectric have the characteristics of increasing on-current and lowering off-current. The change in the threshold voltage of the transistor affects the power dissipation. Therefore, the change in the threshold voltage as a function of theferroelectric thickness is analyzed. The presented threshold voltage model is in a good agreement with the results of TCAD. As a results of our analysis using this analytical threshold voltage model, the change in the threshold voltage with respect to the change in the ferroelectric thickness showed that the threshold voltage increased with the increase of the absolute value of charges in the employed ferroelectric. This suggests that it is possible to obtain an optimum ferroelectric thickness at which the threshold voltage shift becomes 0 V by the voltage across the ferroelectric even when the channel length is reduced. It was also found that the ferroelectric thickness increased as the silicon thickness increased when the channel length was less than 30 nm, but the ferroelectric thickness decreased as the silicon thickness increased when the channel length was 30 nm or more in order to satisfy ΔV_th=0.

• Proceedings of the IEEK Conference
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• 2004.06b
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• pp.383-386
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• 2004

The one of important requisites for fabricating molecular electronic device is the single crystal direction of bottom substrate nowadays. [1,2]. We obtain the optimum SAM result when the Au crystal is <111> structure for Self-Assembled molecular. To get the <111> crystal Au, we generally repeat heating and cooling course after evaporating Au [3]. However, we can fabricate <111> crystal Av thin film except post treatment because we simultaneously evaporate and anneal using Effusion Cell. In this paper, we study on thin film growth of <111> crystal Au as bottom electrode which is essential for Self-Assembled molecular by Effusion Cell and analyze crystal structure, thickness, surface conductivity and so on as each process condition.