• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.17 no.5
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• pp.143-150
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• 2018

With the rapid development of RF based high speed wireless communication technology, devices that can be applied to IoT networks based on RF bandwidth are rapidly spreading, nevertheless, the development speed of the RF communication is not possible to keep up with the spread of the RF band for wireless communication. In this situation, OWC technology that uses visible light source as a transmitter is attracting attention as a technology that can overcome the band exhaustion problem of RF based wireless communication technology. Although, due to the distortion of the LED illumination shape by camera exposure time and LED blinking period, the LED illumination detection rate is degraded and the RoI setting is inaccurate. In this paper, we propose an adaptive median filter applied LED illumination detection algorithm for low rate CamCom, it is possible to detect a clear RoI and LED illumination. This research will be able to play a role as a complementary material of RF based wireless communication technology efficiently.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.8
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• pp.52-59
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• 2007

In this paper, we analyzed and measured implant isolation characteristics for a 1.25 Gbps monolithic integrated hi-directional (M-BiDi) optoelectronic system-on-a-chip, which is a key component to constitute gigabit passive optical networks (PONs) for a fiber-to-the-home (FTTH). Also, we derived an equivalent circuit of the implant structure under various DC bias conditions. The 1.25 Gbps M-BiDi transmit-receive SoC consists of a laser diode with a monitor photodiode as a transmitter and a digital photodiode as a digital data receiver on the same InP wafer According to IEEE 802.3ah and ITU-T G.983.3 standards, a receiver sensitivity of the digital receiver has to satisfy under -24 dBm @ BER=10-12. Therefore, the electrical crosstalk levels have to maintain less than -86 dB from DC to 3 GHz. From analysed and measured results of the implant structure, the M-BiDi SoC with the implant area of 20 mm width and more than 200 mm distance between the laser diode and monitor photodiode, and between the monitor photodiode and digital photodiode, satisfies the electrical crosstalk level. These implant characteristics can be used for the design and fabrication of an optoelectronic SoC design, and expended to a mixed-mode SoC field.