• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.153-153
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• 2016

Polyoxymethylene copolymer (POM-C) is an attractive and widely used engineering thermoplastic across many industrial sectors owing to outstanding physical, mechanical, self-lubricating and chemical properties. In this research work, the POM-C blocks were irradiated with 1 MeV electron beam energy in five doses (100, 200, 300, 500 and 700 KGy) in vacuum condition at room temperature. The tribological and physico-chemical properties of electron beam irradiated POM-C blocks have been analyzed using Pin on disk tribometer, Raman spectroscopy, SEM-EDS, Optical microscopy, 3D Nano surface profiler system and Contact angle analyzer. Electron beam irradiation at a dose of 100 kGy resulted in a decrease of the friction coefficient and wear loss of POM-C block due to well suited cross-linking, carbonization, free radicals formation and energetic electrons-atoms collisions (physical interaction). It also shows lowest surface roughness and highest water contact angle among all unirradiated and irradiated POM-C blocks. The irradiation doses at 200, 300, 500 and 700 kGy resulted in increase of the friction coefficient as compared to unirradiated POM-C block due to severe chain scission, chemical and physical structural degradation. The electron beam irradiation transferred the wear of unirradiated POM-C block from the abrasive wear, adhesive wear and scraping to mild scraping for the 1 MeV, 100 kGy irradiated POM-C block which is concluded from SEM-EDS and Optical microscopic observations. The degree of improvement for tribological attribute relies on the electron beam irradiation condition (energy and dose rate).

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.332.1-332.1
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• 2016

Application of magnetic fields is important to characterize the carrier dynamics in semiconductor quantum structures. We performed photoluminescence (PL) measurements from an InGaP-AlInGaP single quantum well under pulsed magnetic fields to 50 T. The zero field interband PL transition energy matches well with the self-consistent Poisson-Schr?dinger equation. We attempted to analyze the dimensionality of the quantum well by using the diamagnetic shift of the magnetoexciton. The real quantum well has finite thickness that causes the quasi-two-dimensional behavior of the exciton diamagnetic shift. The PL intensity diminishes with increasing magnetic field because of the exciton motion in the presence of magnetic field.

• Bulletin of the Korean Chemical Society
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• 제27권10호
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• pp.1562-1566
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• 2006

Mesoporous silica films with three different pore sizes were prepared by using cationic surfactant, non-ionic surfactant, or triblock copolymer as structure directing agents with tetramethylorthosilicate as silica source in order to control the pore size and wall thickness. They were synthesized by an evaporation-induced self-assembly process and spin-coated on Si wafer. Mesoporous silica films with three different pore sizes of 2.9, 4.6, and 6.6 nm and wall thickness ranging from $\sim$1 to $\sim$3 nm were prepared by using three different surfactants. These materials were optically transparent mesoporous silica films and crack free when thickness was less than 1 m m. The photoluminescence spectra found in the visible range were peaked at higher energy for smaller pore and thinner wall sized materials, consistent with the quantum confinement effect within the nano-sized walls of the silica pores.

• Bulletin of the Korean Chemical Society
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• 제35권5호
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• pp.1397-1402
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• 2014

The complete active space self-consist field method followed by the internally contracted multireference configuration interaction method has been used to compute the potential energy curves of $X^2\prod_g$, $a^4\prod_u$, $A^2\prod_u$, $b^4\sum_{g}^{-}$, and $B^2\sum_{g}^{-}$ states of $S{_2}^+$ cation with large correlation-consistent basis sets. Utilizing the potential energy curves computed with different basis sets, the spectroscopic parameters of these states were evaluated. Finally, the transition dipole moment and the Franck-Condon factors of the transition from $A^2\prod_u$ to $X^2\prod_g$ were evaluated. The radiative lifetime of $A^2\prod_u$ is calculated to be 887 ns, which is in good agreement with experimental value of $805{\pm}10$ ns.

• 대한화학회지
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• 제36권1호
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• pp.38-43
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• 1992

치환 스틸벤 계열에 대해 HMO법으로 Hammett치환기 상수를 해석하였다. 이 계열에서 치환기 상수에 대한 유도효과와 공명효과의 기여를 양자화학적 지수로 취하여 계산한 이론값이 Hammett 치환기 상수 ${\sigma}_p$와 병행성이 있음을 알았으며 이 이론값으로 치환 스틸벤의 쌍극자능륙에 미치는 치환기 효과를 설명할 수 있었다. 아울러 이 화합물의 전자전이에 대한 최대 흡수파장$({\lambda}_{max})$은 HOMO와 LUMO 에너지의 창에 의존됨이 확인되었다.

• 한국재난정보학회 논문집
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• 제18권4호
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• pp.847-860
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• 2022

연구목적: 본 논문은 자가발전기반을 통한 항만구조물의 건전성 모니터링 시스템 개발에 대한 기초연구이다. 연구방법: 자가발전 시스템 개발 및 해수용 광섬유(FBG)센서 개발로 항만구조물 건전성 모니터링 시스템 구축에 대한 기초연구 데이터를 제공한다. 연구결과: 일조량 시뮬레이션 분석을 통해 국내환경에서 4-5시간의 일조량 확보가 가능하며, 이를 통해 해수적용이 가능한 광섬유센서의 Raw 데이터를 수집하는 광분배기(인트로게이터), 수집된 데이터를 연산하는 MCU와 무선 통신기능이 탑재된 IoT 모듈, 모니터링 서버부로 송신하는 Gateway로 구성된 장치에 대한 전원공급이 가능한 시스템을 구축하였다. 결론: 광섬유(FBG)센서를 통한 항만구조물의 직접적인 거동에 대한 센싱 모니터링 구축과 이를 위한 자가발전시스템 적용의 가능성을 확인하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.100-101
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• 2012

The plasma damage free and room temperature processedthin film deposition technology is essential for realization of various next generation organic microelectronic devices such as flexible AMOLED display, flexible OLED lighting, and organic photovoltaic cells because characteristics of fragile organic materials in the plasma process and low glass transition temperatures (Tg) of polymer substrate. In case of directly deposition of metal oxide thin films (including transparent conductive oxide (TCO) and amorphous oxide semiconductor (AOS)) on the organic layers, plasma damages against to the organic materials is fatal. This damage is believed to be originated mainly from high energy energetic particles during the sputtering process such as negative oxygen ions, reflected neutrals by reflection of plasma background gas at the target surface, sputtered atoms, bulk plasma ions, and secondary electrons. To solve this problem, we developed the NBAS (Neutral Beam Assisted Sputtering) process as a plasma damage free and room temperature processed sputtering technology. As a result, electro-optical properties of NBAS processed ITO thin film showed resistivity of $4.0{\times}10^{-4}{\Omega}{\cdot}m$ and high transmittance (>90% at 550 nm) with nano- crystalline structure at room temperature process. Furthermore, in the experiment result of directly deposition of TCO top anode on the inverted structure OLED cell, it is verified that NBAS TCO deposition process does not damages to the underlying organic layers. In case of deposition of transparent conductive oxide (TCO) thin film on the plastic polymer substrate, the room temperature processed sputtering coating of high quality TCO thin film is required. During the sputtering process with higher density plasma, the energetic particles contribute self supplying of activation & crystallization energy without any additional heating and post-annealing and forminga high quality TCO thin film. However, negative oxygen ions which generated from sputteringtarget surface by electron attachment are accelerated to high energy by induced cathode self-bias. Thus the high energy negative oxygen ions can lead to critical physical bombardment damages to forming oxide thin film and this effect does not recover in room temperature process without post thermal annealing. To salve the inherent limitation of plasma sputtering, we have been developed the Magnetic Field Shielded Sputtering (MFSS) process as the high quality oxide thin film deposition process at room temperature. The MFSS process is effectively eliminate or suppress the negative oxygen ions bombardment damage by the plasma limiter which composed permanent magnet array. As a result, electro-optical properties of MFSS processed ITO thin film (resistivity $3.9{\times}10^{-4}{\Omega}{\cdot}cm$, transmittance 95% at 550 nm) have approachedthose of a high temperature DC magnetron sputtering (DMS) ITO thin film were. Also, AOS (a-IGZO) TFTs fabricated by MFSS process without higher temperature post annealing showed very comparable electrical performance with those by DMS process with $400^{\circ}C$ post annealing. They are important to note that the bombardment of a negative oxygen ion which is accelerated by dc self-bias during rf sputtering could degrade the electrical performance of ITO electrodes and a-IGZO TFTs. Finally, we found that reduction of damage from the high energy negative oxygen ions bombardment drives improvement of crystalline structure in the ITO thin film and suppression of the sub-gab states in a-IGZO semiconductor thin film. For realization of organic flexible electronic devices based on plastic substrates, gas barrier coatings are required to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency flexible AMOLEDs needs an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}gm^{-2}day^{-1}$. The key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required (under ${\sim}10^{-6}gm^{-2}day^{-1}$) is the suppression of nano-sized defect sites and gas diffusion pathways among the grain boundaries. For formation of high quality single inorganic gas barrier layer, we developed high density nano-structured Al2O3 single gas barrier layer usinga NBAS process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nano- crystalline phase with various grain sizes in a single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the NBAS processed $Al_2O_3$ gas barrier film have improved order of magnitude compared with that of conventional $Al_2O_3$ layers made by the RF magnetron sputteringprocess under the same sputtering conditions; the WVTR of the NBAS processed $Al_2O_3$ gas barrier film was about $5{\times}10^{-6}g/m^2/day$ by just single layer.

• Nuclear Engineering and Technology
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• 제49권4호
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• pp.792-800
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• 2017

The essential requirement of a material to be used for engineering purposes at nuclear establishments is its ability to attenuate the most penetrating ionizing radiations, gamma $({\gamma})-rays$. Mostly, high-Z materials such as heavy concrete, lead, mercury, and their mixtures or alloys have been used in the construction of nuclear establishments and thus termed as nuclear engineering materials (NEM). The NEM are classified into two categories, namely opaque and transparent, depending on their behavior towards the visible spectrum of EM waves. The majority of NEM are opaque. By contrast, various types of glass, which are transparent to visible light, are necessary at certain places in the nuclear establishments. In the present study, ${\gamma}-ray$ shielding behaviors (GSB) of six glass samples (transparent NEM) were evaluated and compared with some opaque NEM in a wide range of energy (15 keV-15 MeV) and optical thickness (OT). The study was performed by computing various ${\gamma}-ray$ shielding parameters (GSP) such as the mass attenuation coefficient, equivalent atomic number, and buildup factor. A self-designed and validated computer-program, the buildup factor-tool, was used for various computations. It has been established that some glass samples show good GSB, thus can safely be used in the construction of nuclear establishments in conjunction with the opaque NEM as well.

• 한국산학기술학회논문지
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• 제5권4호
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• pp.336-339
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• 2004

본 논문은 Al/sub x//Ga/sub 1-x//As/Ga/sub y//In/sub l-y//As/GaAs 이종접합 소자의 2차원적 산란율을 해석하였다. 사각 양자 우물의 전자 준위는 슈뢰딩거와 포아송 방정식의 연계풀이에 의해 수치해석 적으로 해석하였다. 수치해석으로 얻어진 파동함수와 에너지 준위를 이용하여 이 구조에서 주요한 2차원 산란율들을 구하였다. 극성광학 포논, 음향 포논, 압전 산란, 이온화된 불순물 산란, 그리고 합금 산란이 첫 번째 두개의 하부 밴드에 대해 고려되었다. 또한 2차원에 대해 구하여진 이 결과는 같은 영역에서의 3차원 산란율과 비교하였다.

• 한국재료학회지
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• 제19권7호
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• pp.356-361
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• 2009

The optical characterization of self-assembled InAs/AlAs Quantum Dots(QD) grown by MBE(Molecular Beam Epitaxy) was investigated by using Photoluminescence(PL) spectroscopy. The influence of thin AlAs barrier on QDs were carried out by utilizing a pumping beam that has lower energy than that of the AlAs barrier. This provides the evidence for the tunneling of carriers from the GaAs layer, which results in a strong QD intensity compared to the GaAs at the 16 K PL spectrum. The presence of two QDs signals were found to be associated with the ground-states transitions from QDs with a bimodal size distribution made by the excitation power-dependent PL. From the temperature-dependent PL, the rapid red shift of the peak emission that was related to the QD2 from the increasing temperature was attributed to the coherence between the QDs of bimodal size distribution. A red shift of the PL peak of QDs emission and the reduction of the FWHM(Full Width at Half Maximum) were observed when the annealing temperatures ranged from 500 $^{\circ}C$ to 750 $^{\circ}C$, which indicates that the interdiffusion between the dots and the capping layer was caused by an improvement in the uniformity size of the QDs.