• Title/Summary/Keyword: optical pumping

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Operational and Thermal Characteristics of a Microchip Yb:YAG Laser (마이크로 칩 Yb:YAG 레이저의 동작 및 열적 특성)

  • Moon, Hee-Jong;Hong, Sung-Ki;Lim, Chang-Hwan
    • Korean Journal of Optics and Photonics
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    • v.22 no.2
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    • pp.96-101
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    • 2011
  • Operational and thermal characteristics of a thin disk Yb:YAG crystal with a thickness of 0.8 mm were studied using as a pumping source a fiber-coupled 930 nm laser diode. The heat generated in the crystal was dissipated by placing both surfaces in contact with copper plates with central hole, and the dependence of the temperature change in the illuminated spot on hole size was investigated by measuring the spectral change of the lasing peaks. The slope efficiency and optical-to-optical efficiency with respect to the LD pump power were as high as 42.2% and 34.8%, respectively. The temperature at the illuminated spot increased with diode current and with increasing hole size of the copper plate. When the hole size considerably exceeded the crystal thickness, the temperature rise deviated from the linear increase at high pump power.

Performances of Erbium-Doped Fiber Amplifier Using 1530nm-Band Pump for Long Wavelength Multichannel Amplification

  • Choi, Bo-Hun;Chu, Moo-Jung;Park, Hyo-Hoon;Lee, Jong-Hyun
    • ETRI Journal
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    • v.23 no.1
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    • pp.1-8
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    • 2001
  • The performance of a long wavelength-band erbium-doped fiber amplifier (L-band EDFA) using 1530nm-band pumping has been studied. A 1530nm-band pump source is built using a tunable light source and two C-band EDFAs in cascaded configuration, which is able to deliver a maximum output power of 23dBm. Gain coefficient and noise figure (NF) of the L-band EDFA are measured for pump wavelengths between 1530nm and 1560nm. The gain coefficient with a 1545nm pump is more than twice as large as with a 1480nm pump. It indicates that the L-band EDFA consumes low power. The noise figure of 1530nm pump is 6.36dB at worst, which is 0.75dB higher than that of 1480nm pumped EDFA. The optimum pump wavelength range to obtain high gain and low NF in the 1530nm band appears to be between 1530nm and 1540nm. Gain spectra as a function of a pump wavelength have bandwidth of more than 10nm so that a broadband pump source can be used as 1530nm-band pump. The L-band EDFA is also tested for WDM signals. Flat Gain bandwidth is 32nm from 1571.5 to 1603.5nm within 1dB excursion at input signal of -10dBm/ch. These results demonstrate that 1530nm-band pump can be used as a new efficient pump source for L-band EDFAs.

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Construction of an Optically Pumped Cesium Atomic Clock (광펌핑 세슘원자시계의 구성)

  • 이호성;오차환;양성훈
    • Korean Journal of Optics and Photonics
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    • v.3 no.2
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    • pp.123-132
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    • 1992
  • We designed and constructed the Cs beam tube which consists of a Ramsey cavity, four C-field rods, fluorescence detecting systems, and etc. for developing an optically pumped Cs atomic clock. A semiconductor laser was used for optical pumping and probing in the Cs beam. We observed Ramsey resonance signal by detecting the fluorescence signal in the probing region as the microwave frequency injected into the Ramsey cavity was scanned near 9192.6 MHz which corresponds to the "clock transition" of Cs atoms. We found that the linewidth of the Ramsey signal was 200 Hz, the magnetic field intensity was $8.61\muT$ when the current of 0.8A flowed in the C-field rods, and the second order Zeeman shift by the magnetic field was 3.17 Hz.s 3.17 Hz.

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Characteristics of Ramsey Resonance Signal in an Optically Pumped Cesium Atomic Clock (광펌핑 세슘원자 시계에서의 Ramsey 공진 특성)

  • 이호성
    • Korean Journal of Optics and Photonics
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    • v.4 no.2
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    • pp.173-180
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    • 1993
  • We observed Ramsey resonance signals from an optically pumped cesium atomic clock and compared them with the theoretical results calculated from the Ramsey transition probabilities. The theoretical results were in good agreement with the experimental results when the weighting factor of $1/{\nu}$ was taken into account to the Maxwellian distribution of velocities in the atomic beam. It was also found that the clock transition signal of Rabi-Ramsey spectra can be greatly enhanced by using two lasers with the proper polarizations as pumping sources of cesium atoms.

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Characteristics of multipass amplification of Ti:sapphire laser for DIAL (DIAL용 Ti:sapphire 레이저의 다중통과 증폭특성)

  • 이용우;이주희
    • Korean Journal of Optics and Photonics
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    • v.7 no.3
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    • pp.244-249
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    • 1996
  • Multipass Ti:sapphire amplifier for the light source of DIAL was developed with an angular-multi-plexing, and the characteristics of output energy and spectra were investigated. As the characteristics of two-stage multipass amplifier, the maximum output energy was 22 mJ and the amplification gain was 20 dB on the wavelength of 790 nm. At that condition, output efficiency of the pumping energy was 18 percent. We obtained $0.15cm^{-1}$ (9.4 pm) as a spectral linewidth in the tuning range of 705~845 nm.

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A Streak Camera Study of Amplified Spontaneous Emission in Polyfluorene Thin Film

  • Shin, Hee-Won;Kim, Yong-Rok
    • Rapid Communication in Photoscience
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    • v.4 no.4
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    • pp.76-78
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    • 2015
  • We report on the photoluminescence (PL) properties of poly[2,7-(9-9-dioctylfluorene)] (PF) thin film under strong optical pumping using a streak camera system. When the excitation energy density increases above $72{\mu}J{\cdot}cm^{-2}$, the emission spectrum becomes narrower and PL decay curve comes to be faster simultaneously. These behaviors are clear evidence of Amplified Spontaneous Emission (ASE) due to a waveguided Stimulated Emission in slab structure of thin film. ASE threshold of $72{\mu}J{\cdot}cm^{-2}$ is comparable with previous reports and PF is attractive as a gain medium for plastic lasers.

Optimization of a Passively Q-switched Yb:YAG Laser Ignitor Pumped by a Laser Diode with Low Power and Long Pulse Width

  • Kim, Jisoo;Moon, Soomin;Park, Youngin;Kim, Hyun Su
    • Current Optics and Photonics
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    • v.4 no.2
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    • pp.127-133
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    • 2020
  • We successfully constructed a passively Q-switched Yb:YAG laser ignitor pumped by a diode laser with low power and long pulse width. To the best of our knowledge, this is the first study to achieve a quasi-MW output power from an optimized Q-switch Yb:YAG laser ignitor by using a pumping diode laser module emitting at under a power of 23 W. The output pulse energy of our optimized laser is 0.98 mJ enclosed in a 1.06 ns pulse width, corresponding to a peak power of 0.92 MW.

Low Hydroxyl Erbium-Doped and Undoped Gels

  • Yuh, Soon-Ku;Park, Sung-Soon;John D. Mackenzie
    • The Korean Journal of Ceramics
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    • v.1 no.3
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    • pp.152-154
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    • 1995
  • A non-hydrolytic sol-gel process was developed to fabricate low-hydroxyl hard gels. The reaction of tert-butyl alcohol with silicon halides provided transparent low-hydroxyl hard gels. Some properties such as transparency, density, and refractive index was successfully doped into the hard gel matrices. The absorption spectrum of an erbium-doped methylsilsesquioxane was investigated to decide the pumping wavelength of an argon laser. The luminescence of the erbium-doped gel at 664 nm seems to be due to $4^F{9/2}\to 4^I_{15/2}$ transition.

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Compact green light sources for laser projection display

  • Ko, Do-Kyeong;Jung, Chang-Soo;Yu, Nan-Ei;Yu, Bong-Ahn;Lee, Yeung-Lak;Lee, Jong-Min
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.1335-1336
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    • 2008
  • A compact diode-pumped microchip(DPM) green light source which consist of pump LD, $Nd:YVO_4$, KTP and a built-in thermoelectric element has been fabricated for laser projection display. The volume of the source is as small as $0.7\;cm^3$ and we obtained the output power of 25mW with the average electric power consumption in pump LD of 304mW which correspond to the electrical-to-optical efficiency of 7.8%. Another approach using quasi phase matching(QPM) technique has been attempted. We obtained the output power of 90mW of green beam with 350mW pumping of a $Nd:YVO_4$ laser with 20-kHz rep. rate and 10-ns pulse duration. Detailed characteristics and issues of the DPM and QPM green light sources will be addressed.

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GaN 계열 양자점 소자 연구 동향

  • Kim, Hyeon Jin;Yun, Ui Jun
    • The Magazine of the IEIE
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    • v.30 no.5
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    • pp.53-53
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    • 2003
  • 지금까지 GaN 계열 물질의 양자점 소자 관련 연구 동향을 양자점 구현 방식을 중점으로 하여 살펴보았다. GaN 계열 물질의 양자점을 구현하는 방법은 S-K 성장모드를 이용한 자발형성 양자점 구현법, anti-surfactaant를 이용하는 방법, selective epitaxy를 이용한 양자점 구현법 등이 시도되고 있다. 현재 GaN 계열 물질의 양자점 소자 연구는 아직 충분한 연구가 이루어지짖 않은 관계로 optical pumping을 통한 LD lasing 구현에 머무르고 있는 실정이다. 후 소자로의 응용을 위해서는 여러 가지 문제점이 해결되어야 한다. 우선 우수한 결정성을 지니는 양자점의 성장이 이루어져야 한다. 이외에도 각 구현 방법 별로 GaN 및 AlGaN 양자점 성장용 기판으로 많이 사용되는 높은 조성의 AlGaN 및 AlN의 doping 기술 개발, patterning 기술의 개선을 통한 미세 공정 개발 등의 여러 가지 과제들이 남아 있다. 그러나, 양자점이 지진 우수한 특성과 이를 이용한 높은 응용 가능성을 고려할 때 GaN 계열 양자점 소자의 전망은 밝다고 할 수 있다.