• Title/Summary/Keyword: optical microscopy

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Corrosion and Oxidation Properties of Ni-Base Superalloy KM 1557 (Ni기 초내열 단조합금 KM 1557의 부식 및 산화성질)

  • Choi, Hyoung Il;Kim, Hyon Tae;Kim, Young Do;Yoon, Kook Han;Yoo, Myoung Ki;Kwun, Sook In;Choi, Ju
    • Analytical Science and Technology
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    • v.5 no.1
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    • pp.143-152
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    • 1992
  • Corrosion resistances in various acids and high temperature oxidation properties have been investigated for the Ni-base superalloy KM 1557. Corrosion tests were performed in $H_2SO_4$, HCl, $HNO_3$, $H_3PO_4$ and $CH_3COOH$. Oxidation tests were carried out in air for 20 and 110hrs at $900^{\circ}C$, $950^{\circ}C$ and $1050^{\circ}C$. Hot corrosion tests were done in salt bath of 75% $Na_2SO_4-25%$ NaCl at $900^{\circ}C$ for 20hrs. After the tests, the samples were observed by optical microscopy and analysed by EPMA and X-ray mapping in order to investigate the distribution of composition. It was shown that corrosion resistances in various acids and hot salt bath were proven to be excellent. It was suggested that the amounts of oxides were determined mainly by the depth of internal and intergranular $Al_2O_3$ oxide layers.

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GaN Epitaxy with PA-MBE on HF Cleaned Cobalt-silicide Buffer Layer (HF 크리닝 처리한 코발트실리사이드 버퍼층 위에 PA-MBE로 성장시킨 GaN의 에피택시)

  • Ha, Jun-Seok;Chang, Ji-Ho;Song, Oh-Sung
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.11 no.2
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    • pp.409-413
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    • 2010
  • We fabricated 10 nm-thick cobalt silicide($CoSi_2$) as a buffer layer on a p-type Si(100) substrate to investigate the possibility of GaN epitaxial growth on $CoSi_2/Si(100)$ substrates. We deposited 500 nm-GaN on the cobalt silicide buffer layer at low temperature with a PA-MBE (plasma assisted-molecular beam epitaxy) after the $CoSi_2/Si$ substrates were cleaned by HF solution. An optical microscopy, AFM, TEM, and HR-XRD (high resolution X-ray diffractometer) were employed to determine the GaN epitaxy. For the GaN samples without HF cleaning, they showed no GaN epitaxial growth. For the GaN samples with HF cleaning, they showed $4\;{\mu}m$-thick GaN epitaxial growth due to surface etching of the silicide layers. Through XRD $\omega$-scan of GaN <0002> direction, we confirmed the cyrstallinity of GaN epitaxy is $2.7^{\circ}$ which is comparable with that of sapphire substrate. Our result implied that $CoSi_2/Si(100)$ substrate would be a good buffer and substrate for GaN epitaxial growth.

Evaluation of Mechanical Properties of AZ61 Magnesium Alloy Joints at various Welding Speeds (용접 속도에 따른 AZ61 마그네슘 합금 마찰교반용접부 기계적 특성 평가)

  • Sun, Seung-Ju;Kim, Jung-Seok;Lee, Woo-Geun;Lim, Jae-Yong
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.18 no.5
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    • pp.278-284
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    • 2017
  • In this study, the heat input conditions suitable for the AZ61 magnesium alloy were derived by controlling the welding speed at a constant rotational speed. In addition, from an economic point of view, industry demands higher welding speeds. Therefore,the effects of the welding speed were studied. The rotational speed applied was 800rpm, and the welding speed was varied from 100 to 500mm/min to evaluate the behavior of the welded regions. Tensile and hardness tests were conducted to examine the mechanical properties. Optical microscopy was used to observe the microstructure and soundness of the welded regions. Defects were observed at the welded region when the welding speed was more than400mm/min. As the welding speed increased, the grain size of the stir zone decreased and the hardness tended to increase proportionally. When the rotational speed was 800 rpm and the welding speed was 200mm/min and 300mm/min, there wereno defects in the welded region and excellent mechanical properties were recorded. In addition, the joint efficiencies were 100.5% and 101.2%, respectively, and the ultimate tensile strength was similar to that of the base metal. Fracture of the tensile specimen occurred between the advancing side and stir zone, and the fracture location coincided with the region where the hardness decreased temporarily.

Solution Processed Porous Fe2O3 Thin Films for Solar-Driven Water Splitting

  • Suryawanshi, Mahesh P.;Kim, Seonghyeop;Ghorpade, Uma V.;Suryawanshi, Umesh P.;Jang, Jun Sung;Gang, Myeng Gil;Kim, Jin Hyeok;Moon, Jong Ha
    • Korean Journal of Materials Research
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    • v.27 no.11
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    • pp.631-635
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    • 2017
  • We report facile solution processing of mesoporous hematite (${\alpha}-Fe_2O_3$) thin films for high efficiency solar-driven water splitting. $Fe_2O_3$ thin films were prepared on fluorine doped tin oxide(FTO) conducting substrates by spin coating of a precursor solution followed by annealing at $550^{\circ}C$ for 30 min. in air ambient. Specifically, the precursor solution was prepared by dissolving non-toxic $FeCl_3$ as an Fe source in highly versatile dimethyl sulfoxide(DMSO) as a solvent. The as-deposited and annealed thin films were characterized for their morphological, structural and optical properties using field-emission scanning electron microscopy(FE-SEM), X-ray diffraction(XRD), X-ray photoelectron spectroscopy(XPS) and UV-Vis absorption spectroscopy. The photoelectrochemical performance of the precursor (${\alpha}-FeOOH$) and annealed (${\alpha}-Fe_2O_3$) films were characterized and it was found that the ${\alpha}-Fe_2O_3$ film exhibited an increased photocurrent density of ${\sim}0.78mA/cm^2$ at 1.23 V vs. RHE, which is about 3.4 times higher than that of the ${\alpha}-FeOOH$ films ($0.23mA/cm^2$ at 1.23 V vs. RHE). The improved performance can be attributed to the improved crystallinity and porosity of ${\alpha}-Fe_2O_3$ thin films after annealing treatment at higher temperatures. Detailed electrical characterization was further carried out to elucidate the enhanced PEC performance of ${\alpha}-Fe_2O_3$ thin films.

Anatomical Characteristics of Three Korean Bamboo Species (국내산 대나무 3종의 해부학적 특성)

  • Jeon, Woo-Seok;Kim, Yun-Ki;Lee, Ju-Ah;Kim, Ah-Ran;Darsan, Byantara;Chung, Woo-Yang;Kim, Nam-Hun
    • Journal of the Korean Wood Science and Technology
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    • v.46 no.1
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    • pp.29-37
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    • 2018
  • Bamboo is one of the major biomass resources in the world. To obtain valuable information for effective use of bamboo resources in Korea, the anatomical characteristics of the commercial Korean bamboo species (Phyllostachys pubescens, Phyllostachys nigra, and Phyllostachys bambusoides) were analyzed. The structures in bamboo culm were observed by optical and scanning electron microscopy. Also the crystalline properties as relative crystallinity and crystallite width were measured by an X-ray diffraction method. The three Korean bamboo species had the vascular bundle type I with tylosoid in intercellular space. In the outer part of culm, vascular bundles showed denser spacing than inner part. The fiber length in outer part samples of the three bamboo species showed longer than inner part samples. Furthermore, the fiber length showed a significant difference between inner part and outer part in three bamboo species, showing the longest fiber length in Phyllostachys bambusoides. Phyllostachys pubescens showed the greatest diameter in vessel and parenchyma on cross section. Parenchyma cells in Phyllostachys pubescens and Phyllostachys bambusoides showed similar length and width in both radial and tangential sections. The relative crystallinity and crystallite width in outer part samples of the three bamboo species showed higher values than those in inner part samples, with the greatest values from Phyllostachys bambusoides.

GaN epitaxy growth by low temperature HYPE on $CoSi_2$ buffer/Si substrates (실리콘 기판과 $CoSi_2$ 버퍼층 위에 HVPE로 저온에서 형성된 GaN의 에피텍셜 성장 연구)

  • Ha, Jun-Seok;Park, Jong-Sung;Song, Oh-Sung;Yao, T.;Jang, Ji-Ho
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.19 no.4
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    • pp.159-164
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    • 2009
  • We fabricated 40 nm-thick cobalt silicide ($CoSi_2$) as a buffer layer, on p-type Si(100) and Si(111) substrates to investigate the possibility of GaN epitaxial growth on $CoSi_2$/Si substrates. We deposited GaN using a HVPE (hydride vapor phase epitaxy) with two processes of process I ($850^{\circ}C$-12 minutes + $1080^{\circ}C$-30 minutes) and process II ($557^{\circ}C$-5 minutes + $900^{\circ}C$-5 minutes) on $CoSi_2$/Si substrates. An optical microscopy, FE-SEM, AFM, and HR-XRD (high resolution X-ray diffractometer) were employed to determine the GaN epitaxy. In case of process I, it showed no GaN epitaxial growth. However, in process II, it showed that GaN epitaxial growth occurred. Especially, in process II, GaN layer showed selfaligned substrate separation from silicon substrate. Through XRD ${\omega}$-scan of GaN <0002> direction, we confirmed that the combination of cobalt silicide and Si(100) as a buffer and HVPE at low temperature (process II) was helpful for GaN epitaxy growth.

On the Composites of poly(ethylene 2,6-naphthalate) with a Thermotropic Block Copolyester(I) (열방성 블록 코폴리에스테르와 poly(ethylene 2,6-naphthalate)의 복합재료 연구(I))

  • Choi, Jae Kon
    • Applied Chemistry for Engineering
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    • v.8 no.3
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    • pp.454-462
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    • 1997
  • Thermotropic block copolyester(TLCP-b-PBN) based on poly(tetramethylene 2,6-(naphthaloyldioxy)dibenzoates)(TLCP) and poly(butylene 2,6-naphthalate)(PBN) was synthesized by solution polycondensation and melt-blended with poly(ethylene 2,6-naphthalate)(PEN) for in-situ composites. The TLCP domains showed nematic behavior in melt. The composition of block copolymer was determined from $^1H-NMR$ spectroscopy. The DSC thermogram of block copolymer revealed the presence of two major melting transitions, corresponding to the separete melting of PBN and TLCP domains. The glass transition temperature(Tg) of the PEN in the blends decreased with increasing the content of TLCP-b-PBN and the TLCP-b-PBN acted as a nucleating agent for the matrix polymers. In the 20% TLCP-b-PBN blend, well oriented TLCP fibriles were observed at temperature above the melting point of the PEN by optical microscopy. By scanning electron micrographs of cryogenically fractured surfaces of extruded blends, the TLCp domains were found to be finely and uniformely dispersed in 0.15 to $0.2{\mu}m$ size. Interfacial adhesion between the TLCP and matrix polymer was seemed to be good. Under certain condition TLCP formed a fiver structure in the PEN matrix, with thin oriented TLCP fibril in the skin region and spherical TLCP domains in the core.

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Comparison of Cariogenic Characteristics between Fluoride-sensitive and Fluoride-resistant Streptococcus mutans (불소 민감성 Streptococcus mutans와 불소 저항성Streptococcus mutans의 우식원성 특성 비교)

  • Ong, Seung-Hwan;Kim, Jongsoo;Baek, Dong-Heon;Yoo, Seunghoon
    • Journal of the korean academy of Pediatric Dentistry
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    • v.47 no.4
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    • pp.397-405
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    • 2020
  • The aim of this study is to compare cariogenic characteristics of fluoride-sensitive Streptococcus mutans [fluoride-sensitive (FS) S. mutans ] and fluoride-resistant Streptococcus mutans [fluoride-resistant (FR) S. mutans] in the presence of sucrose, and to evaluate its effect on cariogenic biofilm formation. S. mutans ATCC 25175 was continuously cultured in trypticase soy broth (TSB) containing NaF (70 ppm) for 40 days to generate FR S. mutans. FS and FR S. mutans were inoculated in TSB with or without 2% sucrose, and optical density and pH were measured every hour. An oral biofilm was formed using saliva bacteria and analyzed through confocal laser scanning microscopy and CFU count. Finally, the expression of glucosyltransferases genes of both S. mutans was investigated through RT-PCR. FR S. mutans exhibited slower growth and lower acidogenicity in the presence of sucrose compared to FS S. mutans . Both cariogenic and single species biofilm formation was lower in the presence of FR S. mutans, along with reduced number of bacteria. FR S. mutans showed significantly low levels of gtfB, gtfC, and gtfD expression compared to FS S. mutans . On the basis of results, FR S. mutans may be less virulent in the induction of dental caries.

A Case of Pulmonary Alveolar Proteinosis Associated with Pulmonary Tuberculosis (폐결핵과 병발된 폐포단백증 1예)

  • Park, Min Sik;Jung, Sung Chang;Jin, Myoung In;Lee, Jin Bae;Lim, Sang Hyuk;Park, Sung Hun;Chung, Seung Hie;Shin, Tae Rim;Hyun, Dae Sung;Lee, Sang Chae;Yun, Kil Suk;Kwon, Kun Young
    • Tuberculosis and Respiratory Diseases
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    • v.52 no.4
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    • pp.411-418
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    • 2002
  • Pulmonary alveolar proteinosis(PAP) is a disorder in which an insoluble, proteinaceous material, rich in phospholipids, is deposited in the alveoli and bronchioles. The deficiency in the clearance and degradation of the intra-alveolar phospholipoproteinaceous material in PAP most likely represents a dysfunction of the type II pneumocytes. Although the pathogenesis and causative treatment of PAP is unclear a whole lung bronchopulmonary lavage is a relatively safe and effective treatment. Here we experienced a case of pulmonary alveolar proteinosis in a 62 year old female patient who had pulmonary tuberculosis approximately 20 years ago. She complained of aggravated dyspnea and chronic cough, and presented fine inspiratory crackles at both lung fields, diffuse ground glass opacity with some area of consolidation and smooth interlobular septal thickenings in both upper, right middled lobes, and a portion of right lower lobe. Optical microscopy of the lung tissue obtained by and open lung biopsy revealed many granulomas containing acid-fast smear positive bacilli and diffuse homogeneous PAS-positive fluid in the alveolar space. Immunohistochemical stain showed surfactant. A in the alveolar space. Antituberculosis drugs with bronchoalveolar lavage were used to treat the disease. Thereafter she showed improvement in her symptoms and a partial improvement in the chest X-ray and HRCT findings. We present a case of PAP associated with pulmonary tuberculosis.

Synthesis and Properties of Di-azomesogenic Liquid Crystal Compounds with Terminal Substituents (말단에 치환기를 갖는 이-아조메소젠 액정화합물의 합성 및 성질)

  • Park, Jong-Ryul;Gu, Su-Jin;Yoon, Doo-Soo;Bang, Moon-Soo;Choi, Jae-Kon
    • Applied Chemistry for Engineering
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    • v.26 no.6
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    • pp.698-705
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    • 2015
  • Two series of symmetric dimesogenic compounds containing a butylene or 1-methylbutylene spacer as a flexible group were synthesized. The mesogenic groups of synthesized compounds consist of an azobenzene group with a terminal substituent. Chemical structures as well as, thermal, mesomorphic, and photochemical properties of the synthesized compounds were investigated using FT-IR, $^1H-NMR$, differential scanning calorimetry (DSC), polarizing optical microscopy (POM), and UV-visible spectrometry. P-H, P-F, and $P-OC_6H_{13}$ showed monotropic liquid crystal phases, whereas the others showed enantiotropic liquid crystal phases. Compounds with butylene group as a flexible spacer exhibited wider mesophase temperature ranges and higher thermal transition temperatures than compounds containing a 1-methylbutylene group. Compounds with a high absolute value of the Hammett substituent constant exhibited high thermal transition temperatures and improved stability in the liquid crystal phase. Furthermore, in the absence or presence of UV light illumination, terminal substituents of the azomesogenic group were important factors in deciding the maximum absorbance wavelength (${\lambda}_{max}$) and the rate of photoisomerization (K).