• Title/Summary/Keyword: optical gain

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Linearization of DFB LD by using Cross Gain Modulation of Reflective SOA in Radio-over-Fiber Link

  • Hong, Moon-Ki;Han, Sang-Kook;Lee, Sang-Hoon
    • Journal of the Optical Society of Korea
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    • v.11 no.4
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    • pp.158-161
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    • 2007
  • We proposed a novel linearization technique for a DFB LD in the RoF link. The proposed scheme is based on the cross gain modulation(XGM) effect of a reflective semiconductor optical amplifier(RSOA) with light injection. We experimentally demonstrated and evaluated the enhanced CIR performance using the proposed linearization scheme.

9.6 dB Gain at a 1310 nm Wavelength for a Bismuth-doped Fiber Amplifier

  • Seo, Young-Seok;Lim, Chang-Hwan;Fujimoto, Yasushi;Nakatsuka, Masahiro
    • Journal of the Optical Society of Korea
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    • v.11 no.2
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    • pp.63-66
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    • 2007
  • A 9.6 dB gain is observed at 1310 nm in a 5.0 cm bismuth-doped silica fiber. A launched pump power of 100 mW was obtained using an 810-nm laser diode. We demonstrated the simultaneous optical amplification at two wavelengths near second telecommunication windows, which is the range of zero-dispersion for silica fibers.

A 6 Gb/s Low Power Transimpedance Amplifier with Inductor Peaking and Gain Control for 4-channel Passive Optical Network in 0.13 μm CMOS

  • Lee, Juri;Park, Hyung Gu;Kim, In Seong;Pu, YoungGun;Hwang, Keum Cheol;Yang, Youngoo;Lee, Kang-Yoon;Seo, Munkyo
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.15 no.1
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    • pp.122-130
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    • 2015
  • This paper presents a 6 Gb/s 4-channel arrayed transimpedance amplifiers (TIA) with the gain control for 4-channel passive optical network in $0.13{\mu}m$ complementary metal oxide semiconductor (CMOS) technology. A regulated cascode input stage and inductive-series peaking are proposed in order to increase the bandwidth. Also, a variable gain control is implemented to provide flexibility to the overall system. The TIA has a maximum $98.1dB{\Omega}$ gain and an input current noise level of about 37.8 pA/Hz. The die area of the fabricated TIA is $1.9mm{\times}2.2mm$ for 4-channel. The power dissipation is 47.64 mW/1ch.

Estimation of Tracking Vibration Quantity for an Optimal Tracking Controller Design (최적 트랙킹 제어기 설계를 위한 트랙킹 진동량 추정)

  • Lee, Moon-Noh;Jin, Kyoung-Bog;Lee, Jong-KeuK
    • Transactions of the Korean Society for Noise and Vibration Engineering
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    • v.15 no.5 s.98
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    • pp.578-585
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    • 2005
  • In this paper, we present a schematic method estimating the tracking vibration quantity occurring in the track-following system of an optical recording device. A tracking loop gain adjustment algorithm is introduced to estimate accurately the tracking vibration quantity in spite of the uncertainties of the tracking actuator, Accordingly, the tracking vibration quantity can be estimated from the tracking error, the controller output, the nominal actuator model, and a compensated gain. An optimal tracking controller can be designed from a minimum tracking open-loop gain calculated by the estimated tracking vibration quantity The proposed vibration quantity estimation and controller design method are applied to the track-following system of an optical recording device and are evaluated through the experimental result.

Characteristic of InP/InGaAs HBT for Long Wavelength Application (장파장 응용을 위한 InP/InGaAs HBT의 광특성)

  • 김강대;허영헌;박재홍;김용규;문태정;황성범;송정근
    • Proceedings of the IEEK Conference
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    • 2003.07b
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    • pp.1073-1076
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    • 2003
  • This paper shows the performance as a photodetector of InP/InGaAs HPT operated with a base bias and forntside optical injection through the emitter. InP/InGaAs HPT produced the high optical gain of about 16.2 where HPT is biased at Vc=1V, I$_{B}$=20$\mu$A with an input optical power of 2.4$\mu$W. And we examined that the optical gain of HPTs becomes larger when operating in 3-terminal configuration rather than 2-terminal with the floating base. The optical performance of InP/InGaAs HPT is an attractive to the PIN Photodetector for use in long wavelength optical receivers.s.

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A Burst-mode Optical Receiver for 1.25Gbps PON (1.25Gbps PON용 버스트 모드 광 수신기)

  • Ki, Hyeon-Cheol
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.13 no.5
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    • pp.49-54
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    • 2013
  • We designed a burst mode optical receiver for 1.25Gbps PON(Passive Optical Network), fabricated it using $0.8{\mu}m$ BiCMOS foundry. We minimized the loss of the data in the front of the burst by reducing AGC(Automatic Gain Control) signal generation time using an exponential amplifier. We confirmed that AGC of the burst mode optical receiver functioned well and showed good performance in measurement. However, although the eye of the eye pattern was opened the jitter characteristic was deteriorated due to the heavy waveform distortion.

Spectral gain variation characteristics of the silica-based erbium doped fiber amplifier in the 1545-1557 nm wavelength region (에르븀 첨가 광증폭기의 파장에 따른 이득 특성 측정 및 분석)

  • 김향균;박서연;이동호;박창수
    • Korean Journal of Optics and Photonics
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    • v.8 no.3
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    • pp.209-212
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    • 1997
  • Spectral gain variation characteristics of the silica-based erbium doped fiber amplifiers is investigated in the 1545-1557 nm wavelength region. For a given length of the erbium doped fiber, the gain($G_0$) with minimum spectral gain variation is uniquely determined. The spectral gain imbalance DG is nearly proportional to the difference between G0 and the operating gain(G) with the proportional constant of 0.1-0.2 dB/dB. For the gain flattened EDFA at the input power of -20 dBm/ch. and the gain of 21 dB, the output power and the optical signal to noise variations after 12 cascaded EDFAs were 5 dB and 3 dB, respectively.

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Transform-Limited Optical Short Pulse Generation by Compression of Gain-Switched DFB Laser Pulses (DFB 레이저 이득 스위칭과 펄스 압축을 이용한 변환 제한된 초단 광 펄스 발생)

  • 조성대;이창희;신상영;채창준
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.35D no.6
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    • pp.92-98
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    • 1998
  • The transform limited optical short pulses are generated by compression of pulses from a gain switched distributed feedback laser at 5 GHz repetition rate. The gain-switched pulses have the minimum pulse width of 27 psec with the spectral width of 1.1 nm. Thus the output pulses have a large amount of linear chirp and nonlinear chirp. We suppress the nonlinear chirp by passing the pulses through the optical band pass filter with 3 dB band width of 0.55 nm which is narrower than spectral width of the input pulses and generate 7.1 psec pulses by compressing the output with the dispersion compensating fiber. The pulses have time-bandwidth product of 0.49 which is close to the transform limited gaussian pulse. These pulses can be utilized as optical sources in 40 Gbit/s time division multiplexed optical transmission system.

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Design of Hybrid Optical Amplifiers for High Capacity Optical Transmission

  • Kim, Seung-Kwan;Chang, Sun-Hyok;Han, Jin-Soo;Chu, Moo-Jung
    • ETRI Journal
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    • v.24 no.2
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    • pp.81-96
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    • 2002
  • This paper describes our design of a hybrid amplifier composed of a distributed Raman amplifier and erbium-doped fiber amplifiers for C- and L-bands. We characterize the distributed Raman amplifier by numerical simulation based on the experimentally measured Raman gain coefficient of an ordinary single mode fiber transmission line. In single channel amplification, the crosstalk caused by double Rayleigh scattering was independent of signal input power and simply given as a function of the Raman gain. The double Rayleigh scattering induced power penalty was less than 0.1 dB after 1000 km if the on-off Raman gain was below 21 dB. For multiple channel amplification, using commercially available pump laser diodes and fiber components, we determined and optimized the conditions of three-wavelength Raman pumping for an amplification bandwidth of 32 nm for C-band and 34 nm for L-band. After analyzing the conventional erbium-doped fiber amplifier analysis in C-band, we estimated the performance of the hybrid amplifier for long haul optical transmission. Compared with erbium-doped fiber amplifiers, the optical signal-to-noise ratio was calculated to be higher by more than 3 dB in the optical link using the designed hybrid amplifier.

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Near IR Luminescence Properties of Er-doped Sol-Gel Films (Er이 도핑된 졸-겔 코팅막의 발광특성)

  • Lim, Mi-Ae;Seok, Sang-Il;Kim, Ju-Hyeun;Ahn, Bok-Yeop;Kwon, Jeong-Oh
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2003.11a
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    • pp.136-136
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    • 2003
  • In fiber optic networks, system size and cost can be significantly reduced by development of optical components through planar optical waveguides. One important step to realize the compact optical devices is to develop planar optical amplifier to compensate the losses in splitter or other components. Planar amplifier provides optical gain in devices less than tens of centimeters long, as opposed to fiber amplifiers with lengths of typically tens of meters. To achieve the same amount of gain between the planar and fiber optical amplifier, much higher Er doping levels responsible for the gain than in the fiber amplifier are required due to the reduced path length. These doping must be done without the loss of homogeniety to minimize Er ion-ion interactions which reduce gain by co-operative upconversion. Sol-gel process has become a feasible method to allow the incorporation of Er ion concentrations higher than conventional glass melting methods. In this work, Er-doped $SiO_2$-A1$_2$ $O_3$ films were prepared by two different method via sol -Eel process. Tetraethylorthosilicate(TEOS)/aluminum secondary butoxide [Al (OC$_4$ $H_{9}$)$_3$], methacryloxypropylcnethoxysaane(MPTS)/aluminum secondary butofde [Al(OC$_4$ $H_{9}$)$_3$] systems were used as starting materials for hosting Er ions. Er-doped $SiO_2$-A1$_2$ $O_3$ films obtahed after heat-treating, coatings on Si substrate were characterized by X-ray din action, FT-IR, and N-IR fluorescence spectroscopy. The luminescence properties for two different processing procedure will be compared and discussed from peak intensity and life time.

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