• Title/Summary/Keyword: optical film

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A Study on Dispersion Behaviors of Fume Particles in Laser Cutting Process of Optical Plastic Thin Films

  • Kim, Kyoungjin
    • Journal of the Semiconductor & Display Technology
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    • v.18 no.4
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    • pp.62-68
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    • 2019
  • The optoelectronic display units such as TFT-LCD or OLED require many thin optical plastic films and their mass manufacturing processes employ CO2 laser cutting of those thin films in a large quantity. However, laser film cutting could generate fume particles through melt shearing, vaporization, and chemical degradation and those particles could be of great concern for film surface contamination. In order to appreciate the fume particle dispersion behaviors in laser film cutting, this study relies on random particle simulations by probabilistic distributions of particle size, ejection velocity and angles coupled with Basset-Boussinesq-Oseen model of particle trajectory in low Reynolds number flows. Here, up to one million particles of random sampling have been tested to effectively show fume particles dispersed on the film surface. The computational results could show that particular range of fume particle size could easily disperse into the pixel region of processed optical films.

Effect of the Cu Bottom Layer on the Properties of Ga Doped ZnO Thin Films

  • Kim, Dae-Il
    • Transactions on Electrical and Electronic Materials
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    • v.13 no.4
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    • pp.185-187
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    • 2012
  • Ga doped ZnO (GZO)/copper (Cu) bi-layered film was deposited on glass substrate by RF and DC magnetron sputtering and then the effect of the Cu bottom layer on the optical, electrical and structural properties of GZO films were considered. As-deposited 100 nm thick GZO films had an optical transmittance of 82% in the visible wavelength region and a sheet resistance of 4139 ${\Omega}/{\Box}$, while the GZO/Cu film had optical and electrical properties that were influenced by the Cu bottom layer. GZO films with 5 nm thick Cu film show the lower sheet resistance of 268 ${\Omega}/{\Box}$ and an optical transmittance of 65% due to increased optical absorption by the Cu metallic bottom layer. Based on the figure of merit, it can be concluded that the thin Cu bottom layer effectively increases the performance of GZO films as a transparent and conducting electrode without intentional substrate heating or a post deposition annealing process.

Application of a NDI Method Using Magneto-Optical Film for Micro-Cracks

  • Jaekyoo Lim;Lee, Hyoungno;Lee, Jinyi;Tetsuo Shoji
    • Journal of Mechanical Science and Technology
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    • v.16 no.5
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    • pp.591-598
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    • 2002
  • Leakage magnetic flux is occurred in the cracked area of magnetized specimens, and also it changes the magnetic domain area of the magneto-optical film positioned on the specimen. It causes the change of the optical permeability of the magnetic domain on the crack area. So crack images can be obtained easily using this principle. On the other hand, utilizing a laser in this method makes possible to perform a remote sensing by detecting the light intensity contrast between cracked area and normal area. This paper shows the application of non-destructive inspection system taking advantage of magneto-optical method for micro-cracks and presents examples applied to the several types of specimens having fatigue cracks and fabricated cracks using this method. Also the authors prove the possibility of this method as a remote sensing system under the oscillation load considering application to real fields.

Optical Characteristics of Bimetallic Silver-Gold Film Structure in Surface Plasmon Resonance Sensor Applications (표면 플라즈몬 공명 센서에서의 쌍금속 은-금 박막 구조의 광학 특성)

  • Gwon, Hyuk-Rok;Lee, Seong-Hyuk
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.56 no.1
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    • pp.156-160
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    • 2007
  • Surface plasmon resonance(SPR) has been widely studied for biological and chemical sensing applications. The present study conducts numerical simulation for the single and bimetallic layer SPR configurations by using the multiple beam interference matrix(MBIM) method to investigate the influence of wave interference and complex refractive indices of materials on optical characteristics such as reflectance and optical phase shift which are used for sensing. First, calculated reflectances are compared with experimental data for validation. In addition, in the single film structures this study finds out the appropriate film thicknesses with minimum reflectance for cases of gold film and silver film. For a bimetallic silver-gold film structure, in particular, the bimetallic film thicknesses that has the minimum reflectance are found 36 nm for silver and 5 nm for gold. From the results, the use of phase shift would be useful compared to reflectance in determining the SPR configuration because the phase shift becomes more sensitive than reflectance.

Influence of Surface Texturing on the Electrical and Optical Properties of Aluminum Doped Zinc Oxide Thin Films

  • Lee, Jaeh-Yeong;Shim, Joong-Pyo;Jung, Hak-Kee
    • Journal of information and communication convergence engineering
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    • v.9 no.4
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    • pp.461-465
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    • 2011
  • An aluminum doped zinc oxide (AZO) film for front contacts of thin film solar cells, in this work, were deposited by r.f. magnetron sputtering, and then etched in diluted hydrochloric acid solution for different times. Effects of surface texturing on the electro-optical properties of AZO films were investigated. Also, to clarify the light trapping of textured AZO film, amorphous silicon thin film solar cells were fabricated on the textured AZO/glass substrate and the performance of solar cells were studied. After texturing, the spectral haze at the visible range of 400 ~750 nm increased substantially with the etching time, without a change in the resistivity. The conversion efficiency of amorphous Si solar cells with textured AZO film as a front electrode was improved by the increase of short-circuit current density ($J_{sc}$), compared to cell with flat AZO films.

Transparent ZnO based thin film transistors fabricated at room temperature with high-k dielectric $Gd_2O_3$ gate insulators

  • Tsai, Jung-Ruey;Li, Chi-Shiau;Tsai, Shang-Yu;Chen, Jyun-Ning;Chien, Po-Hsiu;Feng, Wen-Sheng;Liu, Kou-Chen
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.374-377
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    • 2009
  • The characteristics of the deposited thin films of the zinc oxide (ZnO) at different oxygen pressures will be elucidated in this work. The resistivity of ZnO thin films were dominated by the carrier concentration under high oxygen pressure conditions while controlled by the carrier mobility at low oxygen ambiences. In addition, we will show the characteristics of the transparent ZnO based thin film transistor (TFT) fabricated at a full room temperature process with gate dielectric of gadolinium oxide ($Gd_2O_3$) thin films.

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Effect of ZnO Buffer Layers on the Crystallization of ITO Thin Film at Low Temperature

  • Seong, Chung-Heon;Shin, Yong-Jun;Jang, Gun-Eik
    • Transactions on Electrical and Electronic Materials
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    • v.13 no.4
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    • pp.208-211
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    • 2012
  • In the present study, a ZnO thin film, as a buffer layer of ITO (indium tin oxide) film was deposited on glass substrates by RF magnetron sputtering at low temperature of $150^{\circ}C$. In order to estimate the optical characteristics and compare with the experimental results in Glass/ZnO(100 nm)/ITO(35 nm) multilayered film, the simulation program, EMP (Essential Macleod Program) was adopted. The sheet resistance and optical transmittance of the films were measured using the four-point probe method and spectrophotometer, respectively. From X-ray diffraction patterns, all the films deposited at $150^{\circ}C$ demonstrated only the amorphous phase. Optical transmittance was the highest at a ZnO thickness of 100 nm. The ITO(35 nm)/ZnO(100 nm) film exhibits an optical transmittance of >92% at 550 nm. The multilayered film showed an electrical sheet resistance of 407 ${\Omega}/sq.$, which is significantly better than that of a single-layer ITO film without a ZnO buffer layer (815 ${\Omega}/sq.$).

Characteristics of Diamondike Carbon thin Films by Low Discharging Frequency(450KHz) PECVD (저주파수(450 KHz) PECVD에 의한 Diamondlike Carbon박막의 특성)

  • Kim, Han-Ju;Ju, Seung-Gi
    • Korean Journal of Materials Research
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    • v.4 no.2
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    • pp.227-232
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    • 1994
  • Diamondlike carbon thin film has been fabricated with low discharging frequency, 450KHz by plasma enhanced chemical vapor deposition. Its physical properties such as optical band gap, microhardness and internal stress have been compared with 13.56MHz film. Optical band gap of 450KHz DLC thin film was less than 13.56MHz film and it was found that C-H bond concentration and total hydrogen contents in the film decreased greatly as the result of FT-IR and CHN analysis. Also, when DLC thin film was fabricated with low discharging frequency, it was expected that the adhesion of the film to the substrate was improved by the great decrease of internal stress without any considerable decrease of microhardness.

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Optical Interferometric Characterization of Nonlinear Optical Polymer Thin Films

  • Wu, J.W.
    • Journal of the Korean Vacuum Society
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    • v.7 no.s1
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    • pp.149-155
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    • 1998
  • The linear electro-optic (EO) effect is one of the second-order nonlinear optical effects existing in a noncentrosymmetric macroscopic system. In a polymer thin film, the noncentrosymmetry is achieved by electric field poling. The magnitude of the linear EO response is determined through the orientational distribution function of hyperpolarizable molecular dipoles. The relation between the linear EO coefficient and the second-order nonlinear optical susceptibility is explained. Three different methods of measuring the linear EO coefficient of a poled nonliner optical polymer thin film are introduced and discussed. All of them make use of the interferometric technique, the difference being in the optical parameters which are interfering.

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Structural, Optical and Photoconductive Properties of Chemically Deposited Nanocrystalline CdS Thin Films

  • Park, Wug-Dong
    • Transactions on Electrical and Electronic Materials
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    • v.12 no.4
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    • pp.164-168
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    • 2011
  • Nanocrystalline cadmium sulphide (CdS) thin films were prepared using chemical bath deposition (CBD), and the structural, optical and photoconductive properties were investigated. The crystal structure of CdS thin film was studied by X-ray diffraction. The crystallite size, dislocation density and lattice constant of CBD CdS thin films were investigated. The dislocation density of CdS thin films initially decreases with increasing film thickness, and it is nearly constant over the thickness of 2,500 ${\AA}$. The dislocation density decreases with increasing the crystallite size. The Urbach energies of CdS thin films are obtained by fitting the optical absorption coefficient. The optical band gap of CdS thin films increases and finally saturates with increasing the lattice constant. The Urbach energy and optical band gap of the 2,900 A-thick CdS thin film prepared for 60 minutes are 0.24 eV and 2.83 eV, respectively. The activation energies of the 2,900 ${\AA}$-thick CdS thin film at low and high temperature regions were 14 meV and 31 meV, respectively. It is considered that these activation energies correspond to donor levels associated with shallow traps or surface states of CdS thin film. Also, the value of ${\gamma}$ was obtained from the light transfer characteristic of CdS thin film. The value of ${\gamma}$ for the 2,900 A-thick CdS thin film was 1 at 10 V, and it saturates with increasing the applied voltage.