• Title/Summary/Keyword: optical annealing

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Revealing Strong Metal Support Interaction during CO Oxidation with Metal Nanoparticle on Reducible Oxide Substrates

  • Park, Dahee;Kim, Sun Mi;Qadir, Kamran;Park, Jeong Young
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.264-264
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    • 2013
  • Strong metal-support interaction effect is an important issue in determining the catalytic ac-tivity for heterogeneous catalysis. In this study, we investigated the support effect and the role of organic capping layers of two-dimensional Pt nanocatalysts on reducible metal oxide supports under the CO oxidation. Several reducible metal oxide supports including CeO2, Nb2O5, and TiO2 thin films were prepared via sol-gel techniques. The structure, chemical state and optical property were characterized using XRD, XPS, TEM, SEM, and UV-VIS spectrometer. We found that the reducible metal oxide supports have a homogeneous thin thickness and crystalline structure after annealing at high temperature showing the different optical band gap energy. Langmuir-Blodgett technique and arc plasma deposition process were employed to ob-tain Pt nanoparticle arrays with capping and without capping layers, respectively on the oxide support to assess the role of the supports and capping layers on the catalytic activity of Pt catalysts under the CO oxidation. The catalytic performance of CO oxidation over Pt supported on metal oxide thin films under oxidizing reaction conditions (40 Torr CO and 100 Torr O2) was tested. The results show that the catalytic activity significantly depends on the metal oxide support and organic capping layers of Pt nanoparticles, revealing the strong metal-support interaction on these nanocatalysts systems.

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Fabrications and Properties of Colorless Polyimide Films Depending on Various Heat Treatment Conditions via Crosslinkable Monomer (가교 가능한 단량체를 이용한 무색투명 폴리이미드 필름 제조와 다양한 열처리에 따른 성질)

  • Choi, Il-Hwan;Chang, Jin-Hae
    • Polymer(Korea)
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    • v.34 no.5
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    • pp.391-397
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    • 2010
  • Poly(amic acid)(PAA) was prepared by reaction of bicyclo(2,2,2)oct-7-ene-2,3,5,6-tetracarboxylicdianhydride(BTDA) containing double bond for crosslinking and bis[4-(3-aminophenoxy) phenyl] sulfone(BAPS) in N,N-dimethylacetamide(DMAc). The cast film of PAA was heat-treated at different temperatures to create polyimide(PI) films. With increasing thermal crosslinking temperatures from 250 to $350^{\circ}C$, the thermo-mechanical properties, degree of crosslinking, and optical transparency of the cross-linked PI were investigated. The maximum enhancement in the thermo-mechanical properties was observed at a heat treatment condition of $350^{\circ}C$. However, the optical transparency was found to be optimal for $250^{\circ}C$ heat treatment. The degree of crosslinking in NMR was determined to be 85% to 93% with increasing annealing temperature conditions from 250 to $350^{\circ}C$.

Growth and Optical Properties for ZnO Thin Film by Pulesd Laser Deposition (펄스 레이저 증착(PLD)법에 의한 ZnO 박막 성장과 광학적 특성)

  • 홍광준;김재열
    • Proceedings of the Korean Society of Machine Tool Engineers Conference
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    • 2004.10a
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    • pp.233-244
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    • 2004
  • ZnO epilayer were synthesized by the pulesd laser deposition(PLD) process on $Al_2O_3$ substrate after irradiating the surface of the ZnO sintered pellet by the ArF(193nm) excimer laser. The epilayers of ZnO were achieved on sapphire ($Al_2O_3$)substrate at a temperature of $400^{\circ}C$. The crystalline structure of epilayer was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of ZnO epilayer measured with Hall effect by van der Pauw method are $8.27{\times}10^{16}\;cm^{-3}$ and $299\;{\textrm}cm^2/V.s$ at 293K. respectively. The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;3.3973\;eV\;-\;(2.69{\times}10^{-4}\;eV/K)T^2/(T+463K)$. After the as-grown ZnO epilayer was annealed in Zn atmospheres, oxygen and vaccum the origin of point defects of ZnO atmospheres has been investigated by the photoluminescence(PL) at 10K. The native defects of $V_{zn},\;Vo,\;Zn_{int},\;and\;O_{int}$ obtained by PL measurements were classified as a donors or acceptors type. In addition, we concluded that the heat-treatment in the oxygen atmosphere converted ZnO thin films to an optical p-type. Also, we confirmed that vacuum in $ZnO/Al_2O_3$ did not form the native defects because vacuum in ZnO thin films existed in the form of stable bonds.

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The Study on Cu2ZnSnSe4 Thin Films without Annealed Grown by Pulsed Laser Deposition for Solar Cells

  • Bae, Jong-Seong;Byeon, Mi-Rang;Hong, Tae-Eun;Kim, Jong-Pil;Jeong, Ui-Deok;Kim, Yang-Do;O, Won-Tae
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.398.1-398.1
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    • 2014
  • The $Cu_2ZnSnSe_4$ (CZTSe) thin films solar cell is one of the next generation candidates for photovoltaic materials as the absorber of thin film solar cells because it has optimal bandgap (Eg=1.0eV) and high absorption coefficient of $10^4cm^{-1}$ in the visible length region. More importantly, CZTSe consists of abundant and non-toxic elements, so researches on CZTSe thin film solar cells have been increasing significantly in recent years. CZTSe thin film has very similar structure and properties with the CIGS thin film by substituting In with Zn and Ga with Sn. In this study, As-deposited CZTSe thin films have been deposited onto soda lime glass (SLG) substrates at different deposition condition using Pulsed Laser Deposition (PLD) technique without post-annealing process. The effects of deposition conditions (deposition time, deposition temperature) onto the structural, compositional and optical properties of CZTSe thin films have been investigated, without experiencing selenization process. The XRD pattern shows that quaternary CZTSe films with a stannite single phase. The existence of (112), (204), (312), (008), (316) peaks indicates all films grew and crystallized as a stannite-type structure, which is in a good agreement with the diffraction pattern of CZTSe single crystal. All the films were observed to be polycrystalline in nature with a high (112) predominant orientation at $2{\theta}{\sim}26.8^{\circ}$. The carrier concentration, mobility, resistivity and optical band gap of CZTSe thin films depending on the deposition conditions. Average energy band gap of the CZTSe thin films is about 1.3 eV.

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Brush-painted Ti-doped In2O3 Transparent Conducting Electrodes Using Nano-particle Solution for Printable Organic Solar Cells

  • Jeong, Jin-A;Kim, Han-Gi
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.458.2-458.2
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    • 2014
  • We have demonstrated that simple brush-painted Ti-doped $In_2O_3$(TIO) films can be used as a cost effective transparent anodes for organic solar cells (OSCs). We examined the RTA effects on the electrical, optical, and structural properties of the brush painted TIO electrodes. By the direct brushing of TIO nanoparticle ink and rapid thermal annealing (RTA), we can simply obtain TIO electrodes with a low sheet resistance of 28.25 Ohm/square and a high optical transmittance of 85.48% under atmospheric ambient conditions. Furthermore, improvements in the connectivity of the TIO nano-particles in the top region during the RTA process play an important role in reducing the resistivity of the brush-painted TIO anode. In particular, the brush painted TIO films showed a much higher mobility ($33.4cm^2/V-s$) than that of previously reported solution-process transparent oxide films ($1{\sim}5cm^2/V-s$) due to the effects of the Ti dopant with higher Lewis acid strength (3.06) and the reduced contact resistance of TIO nanoparticles. The OSCs fabricated on the brush-painted TIO films exhibited cell-performance with an open circuit voltage (Voc) of 0.61 V, shot circuit current (Jsc) of $7.90mA/cm^2$, fill factor (FF) of 61%, and power conversion efficiency (PCE) of 2.94%. This indicates that brush-painted TIO film is a promising cost-effective transparent electrode for printing-based OSCs with its simple process and high performance.

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The Effect of Thermal Annealing and Growth of CuAlSe2 Single Crystal Thin Film by Hot Wall Epitaxy (Hot Wall Epitaxy(HWE)법에 의한 CuAlSe2 단결정 박막 성장과 열처리 효과)

  • 윤석진;정태수;이우선;박진성;신동찬;홍광준;이봉주
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.10
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    • pp.871-880
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    • 2003
  • Single crystal CuAlSe$_2$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at 410 C with hot wall epitaxy (HWE) system by evaporating CuAlSe$_2$ source at 680 C. The crystalline structure of the single crystal thin films was investigated by the photoluminescence(PL) and double crystal X -ray diffraction (DCXD). The carrier density and mobility of single crystal CuAlSe$_2$ thin films measured with Hall effect by van der Pauw method are 9.24${\times}$10$\^$16/ cm$\^$-3/ and 295 cm$^2$/V $.$ s at 293 K, respectively. The temperature dependence of the energy band gap of the CuAlSe$_2$ obtained from the absorption spectra was well described by the Varshni's relation, Eg(T) = 2.8382 eV - (8.86 ${\times}$ 10$\^$-4/ eV/K)T$^2$/(T + 155K). After the as-grown single crystal CuAlSe$_2$ thin films were annealed in Cu-, Se-, and Al-atmospheres, the origin of point defects of single crystal CuAlSe$_2$ thin films has been investigated by PL at 10 K. The native defects of V$\_$cd/, V$\_$se/, Cd$\_$int/, and Se$\_$int/ obtained by PL measurements were classified as donors or acceptors. And we concluded that the heat-treatment in the Cu-atmosphere converted single crystal CuAlSe$_2$ thin films to an optical n-type. Also, we confirmed that Al in CuAlSe$_2$/GaAs did not form the native defects because Al in single crystal CuAlSe$_2$ thin films existed in the form of stable bonds.

Non-linear optical properties of PECVD nanocrystal-Si nanosecond excitation (PECVD로 제조된 나노결정실리콘 비선형 광학적특성)

  • Yang, Hyeon-Hun;Kim, Han-Wool;Kim, Joo Hoe;Kim, Chul Joong;Lee, Chang Gwon
    • 한국신재생에너지학회:학술대회논문집
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    • 2011.11a
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    • pp.60.2-60.2
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    • 2011
  • A study of the non-linear optical properties of nanocrystal-Si embedded in SiO2 has been performed by using the z-scan method in the nanosecond and femtosecond ranges. Substoichiometric SiOx films were grown by plasma-enhanced chemical-vapor deposition(PECVD) on silica substrates for Si excesses up to 24 at/%. An annealing at $1250^{\circ}C$ for 1 hour was performed in order to precipitate nanocrystal-Si, as shown by EFTEM images. Z-scan results have shown that, by using 5-ns pulses, the non-linear process is ruled by thermal effects and only a negative contribution can be observed in the non-linear refractive index, with typical values around $-10-10cm^2/W$. On the other hand, femtosecond excitation has revealed a pure electronic contribution to the nonlinear refractive index, obtaining values in the order of 10-12 cm2/W. Simulations of heat propagation have shown that the onset of the temperature rise is delayed more than half pulse-width respect to the starting edge of the excitation. A maximum temperature increase of ${\Delta}T=123.1^{\circ}C$ has been found after 3.5ns of the laser pulse maximum. In order to minimize the thermal contribution to the z-scan transmittance and extract the electronic part, the sample response has been analyzed during the first few nanoseconds. By this method we found a reduction of 20% in the thermal effects. So that, shorter pulses have to be used obtain just pure electronic nonlinearities.

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Effect of deposition parameters on structure of ZnO films deposited by an DC Arc Plasmatron

  • Penkov, Oleksiy V.;Chun, Se-Min;Kang, In-Jae;Lee, Heon-Ju
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.255-255
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    • 2011
  • Zinc oxide based thin films have been extensively studied in recent several years because they have very interesting properties and zinc oxide is non-poisonous, abundant and cheap material. ZnO films are employed in different applications like transparent conductive layers in solar cells, protective coatings and so on. Wide industrial application of the ZnO films requires of development of cheap, effective and scalable technology. Typically used technologies don't completely satisfy the industrial requirements. In the present work, we studied effect of the deposition parameters on the structure and properties of ZnO films deposited by DC arc plasmatron. The varied parameters were gas flow rates, precursor composition, substrate temperature and post-deposition annealing temperature. Vapor of Zinc acetylacetone was used as source materials, oxygen was used as working gas and argon was used as the cathode protective gas and a transport gas for the vapor. The plasmatron power was varied in the range of 700-1500 watts. Flow rate of the gases and substrate temperature rate were varied in the wide range to optimize the properties of the deposited coatings. After deposition films were annealed in the hydrogen atmosphere in the wide range of temperatures. Structure of coatings was investigated using XRD and SEM. Chemical composition was analyzed using x-ray photoelectron spectroscopy. Sheet conductivity was measured by 4-point probe method. Optical properties of the transparent ZnO-based coatings were studied by the spectroscopy. It was shown that deposition by a DC Arc plasmatron can be used for low-cost production of zinc oxide films with good optical and electrical properties. Increasing of the oxygen content in the gas mixture during deposition allow to obtain high-resistive protective and insulation coatings with high adhesion to the metallic surface.

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Preparation and Characterization of Al-doped ZnO Transparent Conducting Thin Film by Sol-Gel Processing (솔-젤법에 의한 Al-doped ZnO 투명전도막의 제조 및 특성)

  • Hyun, Seung-Min;Hong, Kwon;Kim, Byong-Ho
    • Journal of the Korean Ceramic Society
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    • v.33 no.2
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    • pp.149-154
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    • 1996
  • ZnO and Al-doped ZnO thin films were prepared by sol-gel dip-coating method and electrical and optical properties of films were investigated. Using the zinc acetate dihydrate and acetylaceton(AcAc) as a chelating agent stable ZnO sol was synthesized with HCl catalyst. Adding aluminium chloride to the ZnO sol Al-doped ZnO sol could be also synthesized. As Al contents increase the crystallinity of ZnO thin film was retarded by increased compressive stress in the film resulted from the difference of ionic radius between Zn2+ and Al3+ The thickness of ZnO and Al-doped ZnO thin film was in the range of 2100~2350$\AA$. The resistivity of ZnO thin films was measured by Van der Pauw method. ZnO and Al-doped ZnO thin films with annealing temperature and Al content had the resistivity of 0.78~1.65$\Omega$cm and ZnO and Al-doped ZnO thin film post-annealed at 40$0^{\circ}C$ in vacuum(5$\times$10-5 torr) showed the resistivity of 2.28$\times$10-2$\Omega$cm. And the trans-mittance of ZnO and Al-doped ZnO thin film is in the range of 91-97% in visible range.

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The electrical and optical properties of semiconductor CdTe films (반도체 CdTe 박막의 전기 광학적 특성)

  • 박국상;김선옥;이기암
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.5 no.1
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    • pp.78-86
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    • 1995
  • Abstract We have investigated the structure and the conductivity of the CdTe films evaporated on the glass substrates by Electron Beam Evaporator (EBE) technique. The structure is observed to be polycrystalline whose phase is mainly hexagonal phase with some cubic phase. Dark electric conductivity is of the order of $1-^{-8} {\Omega}^{-1} cm^{-1}$ and slightly increased by annealing for an hour at $300^{\circ}C$. Activation energy calculated from the electrical conductivity which varies with increasing temperature is 1.446 eV in the case of room temperature substrates. The values of optical band gap are 1.52 eV in direct transition whereas 1.44 eV in indirect. The photoconductivity of the films is of the order of $1-^{-8} {\Omega}^{-1} cm^{-1}$ and the peak energy is about 600 nm in the room temperature. The photoconductivity starts to increase at 850 nm, which is close to 1.446 eV, the activation energy of CdTe polycrystal films.

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