• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.1627-1630
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• 2004

ZnO thin films on (001) sapphire substrates have been deposited by pulsed laser deposition(PLD) technique using an Nd:YAG laser with a wavelength of 266nm. Before post-annealing treatment in the oxygen ambient, the experiment of the deposition of ZnO thin films has been performed for substrate temperatures in the range of $300{\sim}450^{\circ}C$ and flow rate of 100${\sim}$700 seem. In order to investigate the effect of post-annealing treatment of ZnO thin films, films have been annealed at various temperatures after deposition. After post-annealing treatment in the oxygen ambient, the structural properties of ZnO thin films were characterized by X-ray diffraction(XRD) and the optical properties of the ZnO were characterized by photoluminescence(PL).

• Bulletin of the Korean Chemical Society
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• v.32 no.4
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• pp.1331-1335
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• 2011

We report the results of the characterization of Cu oxide thin films deposited by radio frequency (r.f.) magnetron sputtering at different annealing temperatures. The deposited Cu oxide thin films were investigated by scanning electron microscopy, spectroscopic ellipsometry, X-ray diffraction, atomic force microscopy, Xray photoelectron spectroscopy, and contact angle measurements. The thickness of the films was about 180 nm and the monoclinic CuO phase was detected. The $CuO_2$ and $Cu(OH)_2$ phases were grown as amorphous phase and the ratio of the three phases were independent on the annealing temperature. The surface of Cu oxide films changed from hydrophilic to hydrophobic as the annealing temperature increased. This phenomenon is due to the increase of the surface roughness. The direct optical band gap was also obtained and laid in the range between 2.36 and 3.06 eV.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.112-112
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• 2010

Zinc Oxide (ZnO) thin-films were deposited according to the magnetron sputtering method. The deposited ZnO films were annealed with RTA equipment at various annealing temperatures in an vacuum ambient. The influence of the annealing temperature on the structural, electrical, and optical properties of the ZnO films was experimentally investigated, and the effect of conductivity of the ZnO active layer on the device performance of the oxide-TFT was tested. As a result, an increase of the annealing temperature was attributed to improvements of crystallinity in ZnO films. The grain size was found to lead to an increase of conductivity in the ZnO films. Fabricated ZnO TFTs with annealed ZnO active layer provided good performance in the TFT devices. Consequently, the performance of the TFT was determined by the conductivity of the ZnO film, which was related to the structural properties of the ZnO film.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.9
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• pp.705-710
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• 1998

Intrinsic gettering is usually to improve wafer quality, which is an important factor for reliable ULSI devices. In order to generate oxygen precipitation in lightly and heavily boron doped silicon wafers with or without high $^75 As^+$ ion implantation, the 2-step annealing method was adopted. After annealing, the were cleaved and etched with th Wright etchant. The morphology of cross section on samples was inspected by FESEM(field emission scanning electron microscopy). The morphology of unimplanted samples was rater rough than that of the implanted. Oxygen precipitation density observed by an optical microscope in lightly boron doped samples was about 3$\times10^6/cm^3$. However, in heavily boron doped samples, the density of oxygen precipitation was largest at $600^{\circ}C$ in 1st annealing, and decreased abruptly until $800^{\circ}C$, But it increased slightly at $1000^{\circ}C$ and was independent with the implantation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.432-433
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• 2005

In this study, Al doped ZnO(AZO) thin film were prepared on glass substrates by FTS(Facing Targets Sputtering) system. We investigated electrical, optical and structural properties of AZO thin film with the substrate temperature of the R.T, $100^{\circ}C$, $200^{\circ}C$ and the post-annealing. The crystallinity of AZO thin film was increased with increasing the substrate temperature and post-annealing temperature $600^{\circ}C$. The remarkable change of the resistivity with the substrate temperature didn't found and the resistivity with post-annealing was increased slightly.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.164-164
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• 2010

Cds films were deposited on glass substrates using rf magnetron sputtering method followed by rapid thermal annealing(RTA). Effects of annealing temperature on surface characteristic, structural, electrical and optical property of CdS films were investigated at different temperatures ranging from 250 to $550^{\circ}C$ with various holding time. The film annealed at $450^{\circ}C$ with less than 1 min holding time is attributed to the improved crystalline quality of CdS film due to the effective relaxation of residual compressive stress and achieving maximum grain size. The results show that RTA treatments under optimal annealing condition can provide significant improvements in the properties of CdS films.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.21 no.12
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• pp.3277-3285
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• 1996

In this paper, w designed an opical power distribution device for application to an optical switching and an optical subscriber loop. We fabricated PSG thin film by LPCVD. Based on the measured index of fabricted thin film, rib-type waveguide was transformed to two-dimension by the effective index method and we simulated dispersion property to find asingle-mode condition. We found that the optimum design parameters of rib-type waveguide are:cladding layer of 3.mu.m, core layer of 3.mu.m, buffer layer of 10.mu.m, and core width of 4.mu.m. Each side of the guiding region was etched down to 4.mu.m to shape the core. We used these optimum parameters of the rib-type waveguide with branching angle of 0.5.deg. and simulted the Y-branch waveguide by the BPM simulation. Numerical loss in branching area was claculated to be 0.1581dB and equal to the total loss of the Y-branch. The loss of the fabricated Y-branch waveguide on PSG film ws 1.6dB at .lambda.=1.3.mu.m before annealing but was 1.2dB after annealing at 1000.deg. C for 10 minutes. Consequently, the loss of branching area from 3000.mu.m to 6000.mu.m in the z-direction was 0.8dB, and single-mode propagation was confirmed by measuring the near field pattern. For coupling the fabricated Y-branch waveguide with an optical fiber, we fabricated V-groove which was used as the upholder of optical fiber. An etching angle was 54.deg. and the width and depth of guiding groove was 150.mu.m, 70.mu.m, respectively. The optical fiber is inserted onto V-groove. Both the Y-branch and V-groove were connected through the index matching oil. Coupling loss after connecting Y-branch and the optical fiber on V-groove was 0.34dB and that after injecting index mateching oil was 0.14dB.

• Current Optics and Photonics
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• v.5 no.1
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• pp.1-7
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• 2021

For higher sensitivity in ultraviolet (UV) and even vacuum ultraviolet (VUV) detection of silicon-based sensors, a sandwich-structured film sensor based on Ag Localized Surface Plasmon Resonance (LSPR) was designed and fabricated. This film sensor was composed of a Ag nanoparticles (NPs) layer, SiO2 buffer and fluorescence layer by physical vapour deposition and thermal annealing. By tuning the annealing temperature and adding the SiO2 layer, the resonance absorption wavelength of Ag NPs matched with the emission wavelength of the fluorescence layer. Due to the strong plasmon resonance coupling and electromagnetic field formed on the surface of Ag NPs, the radiative recombination rate of the luminescent materials and the number of fluorescent molecules in the excited state increased. Therefore, the fluorescent emission intensity of the sandwich-structured film sensor was 1.10-1.58 times at 120-200 nm and 2.17-2.93 times at 240-360 nm that of the single-layer film sensor. A feasible method is provided for improving the detection performance of UV and VUV detectors.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.473-474
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• 2006

We report on the rapid thermal annealing effect on the electrical, optical, and structural properties of IZO transparent conducting oxide films grown by box cathode sputtering (BCS). To investigate structural properties of rapid thermal annealed IZO films in $N_2$ atmosphere as a function of annealing temperature, syncrotron x-ray scattering experiment was carried out. It was shown that the amorphous structure of the IZO films was maintained until $400^{\circ}C$ because ZnO and $In_2O_3$ are immiscible and must undergo phase separation to allow crystallization. In addition, the IZO films grown at different Ar/$O_2$ ratio of 30/1.5 and 30/0 showed different preferred (222) and (440) orientation, respectively, with increase of rapid thermal annealing temperature. The electrical properties of the OLED with rapid thermal annealed IZO anode was degraded as rapid thermal annealing temperature of IZO increased. This indicates the amorphous IZO anode is more beneficial to make high-quality OLEDs.

• Korean Journal of Materials Research
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• v.19 no.6
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• pp.313-318
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• 2009

Polymer Light Emitting Diodes (PLEDs) with an ITO/PEDOT:PSS/PVK/PFO-poss/LiF/Al structure were prepared on plasma-treated ITO/glass substrates using spin-coating and thermal evaporation methods. The annealing effects of the PFO-poss film when it acts as the emission layer were investigated by using electrical and optical property measurements. The annealing conditions of the PFO-poss emission film were 100 and $200^{\circ}C$ for 1, 2 and 3 hours, respectively. The luminance increased and the turn-on voltage decreased when the annealing temperature and treatment time increased. After examining the Luminance-Voltage (L-V) properties of the PLED, the maximum luminance was found to be 1497 cd/$m^2$ at 11 V for the device when it was annealed at $200^{\circ}C$ for 3 hours. The peak intensity of the PLED emission spectra at approximately 525 nm in wavelength increased when the annealing temperature and time of the PFO-poss film increased. These results suggest that the light emission color shifted from blue to green.