• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.10
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• pp.901-906
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• 2006

The transparent conductive oxide(TCO) has been used in necessity as front electrode for increasing efficiency of LED. In our paper, aluminium-doped zinc oxide films(AZO), which has transparent conducting were prepared with RF magnetron sputtering system on glass substrate(corning 1737) and annealed at $400^{\circ}C$ for 2 hr in vacuum ambient and $600^{\circ}C$ for 2hr with $O_2$ ambient respectively. The smooth AZO films were etched in diluted HCL(0.5 %) to examine the surface properties, which in ambient post-annealing process. We confirmed that the electric, structural and optical properties of textured AZO thin films, which implemented using the methods of XRD, FWHM, AFM and Hall measurement. The properties of textured AZO thin films especially depended on the ambient post-annealing process. We presumed that the change of transmittances as R G B LED and the ambient post-annealing process will be increasing the efficiency of LED.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1343_1344
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• 2009

In this work, transparent conducting Al-doped zinc oxide (AZO) films were prepared on Corning glass substrate by RF magnetron sputtering using an Al-doped ZnO target (Al: 2 wt.%) at room temperature and all films were deposited with athickness of 150 nm. We investigated the effects of the post-annealing temperature and the annealing ambient on structural, electrical and optical properties of AZO films. The films were annealed at temperatures ranging from 300 to $500^{\circ}C$ in steps of $100^{\circ}C$ using rapid thermal annealing equipment in oxygen. The thickness of the film was observed by field emission scanning electron microscopy (FE-SEM) and grain size was calculated from the XRD spectra using the Scherrer equation and their electrical properties were investigated using a hole measurement and the reflectance of AZO films was investigated by UV-VIS spectrometry.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.276-276
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• 2008

Transparent and conducting indium tin oxide (ITO) and ITO/Nickel/ITO(INI) multilayered films were prepared on glass substrates by a magnetron sputtering without intentional substrate heating. The RF(13.56MHz) and DC power were applied to ITO and Nickel target, respectively. The thickness of ITO, Ni and ITO films were kept constantly at 50, 5 and 45 nm. In order to consider the effect of post deposition vacuum annealing in vacuum on the physical and optoeletrical properties of INI films, optical transmittance, electrical resistivity, crystallinity of the films were analyzed. From the observed result, it may conclude that the optoelectrical properties of the INI films were dependent on the post deposition annealing. For the INI films annealed at $300^{\circ}C$, the films have a polycrystalline structure with (110), (200), (210), (211) and (300). The resistivity of the films were $4.0\times10^{-4}{\Omega}cm$ at room temperature. As the annealing($300^{\circ}C$), resistivity decreased to $2.8\times10^{-4}{\Omega}cm$. And also the optical transmittance decreased from 79 to 70 % at 550nm.

• Journal of the Korean Vacuum Society
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• v.22 no.1
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• pp.20-25
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• 2013

ZnO:Al thin films deposited by RF magnetron sputtering were post-annealed and the electrical and optical properties of ZnO:Al thin films were investigated before and after anneling. We confirmed that the ZnO:Al thin film was affected by post-annealing temperature. As post-annealing temperature increases, crystallinity and transmittance in visible area (400~800 nm) of ZnO:Al thin films decreased. While sheet resistance of thin films increased sharply with increasing to $400^{\circ}C$. This result is due to reduce of carrier concentration caused by absorption of $O_2$ or $N_2$ at surface of thin film.

• Bulletin of the Korean Chemical Society
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• v.23 no.4
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• pp.580-586
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• 2002

We investigated the effect of ionic component on crystalline morphology development during isothermal annealing in a sodium neutralized sulfonated poly(ethylene terephthalate) ionomer (Ion-PET) by time-resolved small-angle x-ray scattering (TR-SAX S) using synchrotron radiation. At early stage in Ion-PET, SAXS intensity at a low annealing temperature (Ta = 120 $^{\circ}C)$ decreased monotonously with scattering angle for a while. Then SAXS profile showed a peak and the peak position progressively moved to wider angles with isothermal annealing time. Finally, the peak intensity decreased, shifting the peak angle to wider angle. It is revealed that ionic aggregates (multiplets structure) of several nm, calculated by Debye-Bueche plot, are formed at early stage. They seem to accelerate the crystallization rate and make fine crystallites without spherulite formation (supported by optical microscopy observation). From decrease of peak intensity in SAXS,it is suggested that new lamellae are inserted between the preformed lamellae so that the concentration of ionic multiplets in amorphous region decreases to lower the electron density difference between lamellar crystal and amorphous region. In addition, analysis on the annealing at a high temperature (Ta = 210 $^{\circ}C)$ by optical microscopy, light scattering and transmission electron microscopy shows a formation of spherulite, no ionic aggregates, the retarded crystallization rate and a high level of lamellar orientation.

• Korean Journal of Materials Research
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• v.15 no.8
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• pp.514-517
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• 2005

Effects of nitrogen and oxygen annealing on the carrier concentration, carrier mobility, electrical resistivity and PL characteristics as well as the crystallinity of ZnO films deposited on sapphire substrates by atomic layer deposition (ALD). X-ray diffraction (XRD), Scanning electron microscope (SEM), photoluminescence (PL) analyses, and Hall measurement were performed to investigate the crystallinity, optical properties and electrical properties of the ZnO thin films, respectively. According to the XRD analysis results the crystallinity of the ZnO film annealed in an oxygen atmosphere is better than that of the ZnO film annealed in a nitrogen atmosphere. Annealing undoped ZnO films grown by ALD at a high temperature above $600^{\circ}C$ improves the crystallinity and enhances W emission but deteriorates the electrical conductivity of the flms. The resistivity of the ZnO film annealed particularly at $800^[\circ}C$ in a nitrogen atmosphere is much higher than that annealed at the same temperature in an oxygen atmosphere.

• Journal of the Korean Ceramic Society
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• v.34 no.9
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• pp.941-948
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• 1997

CuCl nanocrystallites dispersed nonlinear optical silica and borosilicate glasses were fabricated by sol-gel process. CuCl powder was dissolved in TEOS(Si(OC2H5)4) and TMB((CH3O)3B), precursors of silica and borosilicate glasses, with ethanol, water and HCl, and precipitated through the heat treatment in the matrix glass. The optical properties of CuCl doped glasses were measured using the spectrophotometer at room temperature and low temperature(77K); Z1, 2 and Z3 exciton peaks from the absorption spectra, were observed at about 370 nm and 380 nm, respectively. The average radius of nanocrystallites, calculated from the blue shift of Z3 excitons, was measured according to annealing temperature and time. The precipitation temperature of CuCl nanocrystallites was decreased when boron was added to silica glass. Increase of annealing temperature and time made average radius of nanocrystallites saturated about 2 nm.

• Journal of Korean Ophthalmic Optics Society
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• v.3 no.1
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• pp.21-25
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• 1998

We investigated the optical properties of lead zirconate($PbZrO_3$, PZ) thin films. The PZ films for the measurement of optical properties were prepared on ITO glass by sol-gel method. By post annealing, with annealing temperature $T=700^{\circ}C$, the pyrochlore phase of as-deposited specimen was transformed into the perovskite phase. The surface of films were plat, transmittance were from 60 to 80% at 480~2000nm, and refractive index were from 2.1 to 1.9 at 480~1000nm.

• Journal of the Institute of Electronics Engineers of Korea TE
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• v.37 no.3
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• pp.1-5
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• 2000

A waveguide of coupled optical modulator was fabricated on LiNbO$_3$ based on proton exchange with self-aligned thin film electrode method. The electrode pattern was designed using a self-aligned method. After proton exchange process, the waveguide was prepared by annealing process. The initial crossover state of the fabricated 2$\times$2 coupled optical modulator was observed with controlling the annealing process variables and the structure of self-aligned thin film electrodes. It was shown form the present work that the measured crosstalk is -29.5[dB] and 8.0[V] of detected modulating voltage.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.05a
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• pp.264-268
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• 1996

Directional coupling optical switch which on the LiNbO$_3$ substrate is fabricated by using proton exchange method and self-aligned method. Proton exchange of proton diffusion method was applied to pattern a waveguide on LiNbO$_3$ substrate. The annealing at 400[$^{\circ}C$] was caroled out to control waveguide width and depth. The process of proton exchange was done at 150[$^{\circ}C$] for 120[min], 200[$^{\circ}C$] for 60[min] and annealing process was done at 400[$^{\circ}C$] for 90[min], 400[$^{\circ}C$] for 60[min]. The high speed directional coupling optical switch has very good figures of merits:the measured high frequency power were achieved.