• 열처리공학회지
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• 제32권2호
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• pp.74-78
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• 2019

$Zn_2SnO_4$ thin films were deposited on quartzs substrates by using radio-frequency magnetron sputtering system. Thermal treatments at various temperatures were performed to evaluate the effect of annealing temperatures on the properties of $Zn_2SnO_4$ thin films. Surface morphologies were examined by using field emission-scanning electron microscopy and showed that sizes of grains were slightly increased and grain boundaries were clear with increasing annealing temperatures. The deposited $Zn_2SnO_4$ thin films on quartzs substrates were amorphous structures and no distinguishable crystallographic changes were observed with variations of annealing temperatures. The optical transmittance was improved with increasing annealing temperatures and was over 90% in the wavelength region between 350 and 1100 nm at the annealing temperature of $600^{\circ}C$. The optical energy bandgaps, which derived from the absorbance of $Zn_2SnO_4$ thin films, were increased from 3.34 eV to 3.43 eV at the annealing temperatures of $450^{\circ}C$ and $600^{\circ}C$, respectively. As the annealing temperature was increased, the electron concentrations were decreased. The electron mobility was decreased and resistivity was increased with increasing annealing temperatures with exception of $450^{\circ}C$. These results indicate that heat treatments at higher annealing temperatures improve the optical and electrical properties of rf-sputtered $Zn_2SnO_4$ thin films.

• E2M - 전기 전자와 첨단 소재
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• 제9권7호
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• pp.690-695
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• 1996

We have systematically investigated the characterization of V$_{2}$O$_{5}$ thin films as a counter electrode for lithium based complementary electrochromic devices. The V$_{2}$O$_{5}$ thin films were prepared by thermal vacuum evaporation with varing the substrate temperature and film thickness. In electrochromic devices for smart windows, the WO$_{3}$ thin films with 400-800 nm thickness require to be capable of reversibly injection 10-15 mC/cm$^{2}$ of lithium, which is readily accomplished charge-balanced switching in a V$_{2}$O$_{5}$ thin films with 100-150nm thick. The V$_{2}$O$_{5}$ thin films produces considerably small changes in optical modulation properties in the visible and near infrared region(500-1100 nm) compared to the amorphous WO$_{3}$ thin films on 10-15 mC/cm$^{2}$ of lithium injection and the V$_{2}$O$_{5}$ thin films can therefore act as a counter electrode to WO$_{3}$ in a lithium based complementary clectrochromic devices. After 10$^{5}$ coloration/bleaching switching time, the degradation does not occurs and the devices exhibit a stable optical modulation in V$_{2}$O$_{5}$ thin films. It has shown that the injected lithium ion amounts in crystalline V$_{2}$O$_{5}$ thin films with the same thickness is large by 3-5 mC/cm$^{2}$ of lithium compared to the amorphous thin films in the same driving conditions. Therefore, to optimize the device performance, it is necessary to choose an appropriate film thickness and crystallinity of V$_{2}$O$_{5}$ for amorphous WO$_{3}$ film thickness as a working electrode.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.293.1-293.1
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• 2016

Various materials including conductive, dielectric, and semi-conductive materials, constitute suitable candidates for printed electronics. Metal nanoparticles (e.g. Ag, Cu, Ni, Au) are typically used in conductive ink. However, easily oxidized metals, such as Cu, must be processed at low temperatures and as such, photonic sintering has gained significant attention as a new low-temperature processing method. This method is based on the principle of selective heating of a strongly absorbent film, without light-source-induced damage to the transparent substrate. However, Cu nanoparticles used in inks are susceptible to the growth of a native copper-oxide layer on their surface. Copper-oxide-nanoparticle ink subjected to a reduction mechanism has therefore been introduced in an attempt to achieve long-term stability and reliability. In this work, a flash-light sintering process was used for the reduction of an inkjet-printed Cu(II)O thin film to a Cu film. Using a photographic lighting instrument, the intensity of the light (or intense pulse light) was controlled by the charged power (Ws). The resulting changes in the structure, as well as the optical and electrical properties of the light-irradiated Cu(II)O films, were investigated. A Cu thin film was obtained from Cu(II)O via photo-thermal reduction at 2500 Ws. More importantly, at one shot of 3000 Ws, a low sheet resistance value ($0.2527{\Omega}/sq.$) and a high resistivity (${\sim}5.05-6.32{\times}10^{-8}{\Omega}m$), which was ~3.0-3.8 times that of bulk Cu was achieved for the ~200-250-nm-thick film.

• 한국광학회지
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• 제28권5호
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• pp.236-240
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• 2017

본 논문에서는 적외선 카메라를 이용하여 집속형 초음파 치료장비인 HIFU (High intensity focused ultrasound)가 발생시키는 물리적인 변화를 연구하였다. HIFU는 비 침습적으로 음향 에너지를 피하조직에 전달할 수 있기 때문에 피부과에서 안면 윤곽형성 및 피부탄력 개선을 위해 사용되고 있다. 피부 리프팅을 목적으로 사용하는 7 MHz HIFU의 사용 효과에 대한 정량적인 정보를 제공하기 위해 온도 분포 및 비가역적 조직 변화에 대한 연구를 실시하였다. HIFU에서 발생한 초음파 에너지로 인해 피하조직 수 밀리미터 크기의 부위에서 발생하는 온도의 변화를 적외선 이미징을 통해 측정하였다. 각 초음파 에너지 조건에서 생긴 열 응고점의 길이를 측정하였고 통계 처리를 통해 정량화 하였다. 온도의 증가가 발생한 부위에 대해서는 조직 검사에서 조직의 비가역적인 변화를 확인하였다. 실험을 통해 확인한 결과 집속된 초음파 에너지 (0.4, 1.2, 2 J)에 비례해서 조직에서 발생하는 온도가 증가하였다. 초음파가 치료하는 초점 부위에 대해 $69{\sim}90^{\circ}C$ 이상의 최고 온도가 발생하였고, 고온이 발생한 지점에서 조직적인 변화가 일어남을 확인할 수 있었다. 조직 검사를 통해 조직 내부 콜라겐의 응고를 통한 조직 변화를 확인하였다. 본 논문의 ex-vivo 실험 결과를 근거로 HIFU를 이용한 조직 응고의 강도를 조절하기 위해 적외선 이미징을 이용하여 얻은 정량적 데이터를 이용할 수 있음을 확인하였다.

• 천문학회보
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• 제39권1호
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• pp.53.2-53.2
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• 2014

IGRINS, the Immersion GRating INfrared Spectrometer, is a near-infrared wide-band high-resolution spectrograph jointly developed by the Korea Astronomy and Space Science Institute and the University of Texas at Austin. IGRINS employs three HAWAII-2RG focal plane array (FPA) detectors. The mechanical mounts for these detectors serves a critical function in the overall instrument design: Optically, they permit the only positional compensation in the otherwise "build to print" design. Thermally, they permit setting and control of the detector operating temperature independently of the cryostat bench. We present the design and fabrication of the mechanical mount as a single module. The detector mount includes the array housing, a housing for the SIDECAR ASIC, a field flattener lens holder, and a support base. The detector and ASIC housing will be kept at 65 K and the support base at 130 K. G10 supports thermally isolate the detector and ASIC housing from the support base. The field flattening lens holder attaches directly to the FPA array housing and holds the lens with a six-point kinematic mount. Fine adjustment features permit changes in axial position and in yaw and pitch angles. We optimized the structural stability and thermal characteristics of the mount design using computer-aided 3D modeling and finite element analysis. Based on the computer simulation, the designed detector mount meets the optical and thermal requirements very well.

• 한국세라믹학회지
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• 제56권1호
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• pp.71-76
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• 2019

Monochromatic amber phosphor in glasses (PiGs) for automotive LED applications were fabricated with $YAG:Ce^{3+}$, $CaAlSiN_3:Eu^{2+}$ phosphors and Pb-free silicate glass. After synthesis and thickness-thinning process, PiGs were mounted on high-power blue LED to make monochromatic amber LEDs. PiGs were simple mixtures of 566 nm yellow YAG, 615 nm red $CaAlSiN_3:Eu^{2+}$ phosphor and transparent glass frit. The powders were uniaxially pressed and treated again through CIP (cold isostatic pressing) at 200 MPa for 20 min to increase packing density. After conventional thermal treatment at $550^{\circ}C$ for 30 min, PiGs were applied by using GPS (gas pressure sintering) to obtain a fully dense PiG plate. As the phosphor content increased, the density of the sintered body decreased and PiGs containing 30 wt% phosphor had full sintered density. Changes in photoluminescence spectra and color coordination were investigated by varying the ratio of $YAG/CaAlSiN_3$ and the thickness of the plates. Considering the optical spectrum and color coordinates, PiG plates with $240{\mu}m$ thickness showed a color purity of 98% and a wavelength of about 605 nm. Plates exhibit suitable optical characteristics as amber light-converting material for automotive LED applications.

• 한국전기전자재료학회논문지
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• 제21권7호
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• pp.629-637
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• 2008

We report several experimental data capable of evaluating the amorphous-to-crystalline (a-c) phase transformation in $(Ag)_x(Ge_2Sb_2Te_5)_{1-x}$ (x = 0, 0.05, 0.1) thin films prepared by a thermal evaporation. The isothermal a-c structural phase changes were evaluated by XRD, and the optical transmittance was measured in the wavelength range of $800{\sim}3000$ nm using a UV-vis-IR spectrophotometer. A speed of the a-c transition was evaluated by detecting the reflection response signals using a nano-pulse scanner with 658 nm laser diode (power P = $1{\sim}17$ mW, pulse duration t = $10{\sim}460$ ns). The surface morphology and roughness of the films were imaged by AFM. It was found that the crystallization speed was so enhanced with an increase of Ag content. While the sheet resistance of c-phase $(Ag)_x(Ge_2Sb_2Te_5)_{1-x}$ was similar to that of c-phase $Ge_2Sb_2Te_5$ (i.e., $R_c{\sim}10{\Omega}/{\square}$), the sheet resistance of a-phase $(Ag)_x(Ge_2Sb_2Te_5)_{1-x}$ was found to be lager than that of a-phase $Ge_2Sb_2Te_5$, $R_a{\sim}5{\times}10^6{\Omega}{/\square}$. For example, the ratios of $R_a/R_c$ for $Ge_2Sb_2Te_5$ and $(Ag)_{0.1}(Ge_2Sb_2Te_5)_{0.9}$ were approximately $5{\times}10^5$ and $5{\times}10^6$, respectively.

• 대한의용생체공학회:의공학회지
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• 제28권2호
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• pp.169-173
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• 2007

During laser irradiation, mechanically deformed cartilage undergoes a temperature dependent phase transformation resulting in accelerated stress relaxation. Clinically, laser-assisted cartilage reshaping may be used to recreate the underlying cartilaginous framework in structures such as ear, larynx, trachea, and nose. Therefore, research and identification of the biophysical transformations in cartilage accompanying laser heating are valuable to identify critical laser dosimetry and phase transformation of cartilage for many clinical applications. quasi-elastic light scattering was investigated using Ho : YAG laser $(\lambda=2.12{\mu}m\;;\;t_p\sim450{\mu}s)$ and Nd:YAG Laser $(\lambda=1.32{\mu}m\;;\;t_p\sim700{\mu}s)$ for heating sources and He : Ne $(\lambda=632.8nm)$ laser, high-power diode pumped laser $(\lambda=532nm)$, and Ti : $Al_2O_3$ femtosecond laser $(\lambda=850nm)$ for light scattering sources. A spectrometer and infrared radiometric sensor were used to monitor the backscattered light spectrum and transient temperature changes from cartilage following laser irradiation. Analysis of the optical, thermal, and quasi-elastic light scattering properties may indicate internal dynamics of proteoglycan movement within the cartilage framework during laser irradiation.

• 대한원격탐사학회지
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• 제35권4호
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• pp.491-502
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• 2019

Distinguishing debris-covered glaciers from debris-free glaciers is difficult when using only optical remote sensing images to extract glacier boundaries.According to the features that the surface temperature of debris-covered glacier is lower than surrounding objects, and higher than clean glaciers, glacial changes in the Yigong Zangbo basin was analyzed on the basis of visible, near-infrared and thermal-infrared band images of Landsat TM and OLI/TIRS in the support of ancillary digital elevation model (DEM). The results indicated that glacier area gradually declined from $928.76km^2$ in 1990 to $918.46km^2$ in 2000 and $901.51km^2$ in 2015. However, debris-covered glacier area showed a slight increase from $63.39km^2$ in 1990 to $66.24km^2$ in 2000 and $71.16km^2$ in 2015. During 25 years, the glacier length became shorter continuously with terminus elevation rising up. The area of moraine lakes in 1990 was $1.43km^2$, which increased to $1.98km^2$ in 2000 and $3.41km^2$ in 2015. In other words, the total area of the moraine lakes in 2015 is 2.38 times of that in 1990. This increase in moraine lake area could be the result of accelerated glacier melt and retreat, which is consistent with the significant warming trend in recent decades in the basin.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.419-420
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• 2008

In this work, we report several experimental data capable of evaluating the phase transition characteristics of (InTe)x(GeTe)y (x = 0.1, 0.3, y =1) pseudo-binary thin films. (InTe)x(GeTe)y phase change thin films have been prepared by thermal evaporator. The crystallization characteristics of amorphous (InTe)x(GeTe)y thin films were investigated by using nano-pulse scanner with 658 nm laser diode (power : 1~17 mW, pulse duration : 10~460 ns) and XRD measurement. It was found that the crystalline speed of In-Ge-Te thin films are faster than $Ge_2Sb_2Te_5$[1] and also the crystalline temperature is higher. Changes in the optical transmittance of as-deposited and annealed films were measured using a UV-VIS-IR spectrophotometer and four-point probe was used to measure the sheeresistance of InGeTe films annealed at different temperature.