• Journal of Electrical Engineering and Technology
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• 제4권2호
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• pp.287-291
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• 2009

In this paper, an optical switch/modulator is designed and its light propagating characteristics analyzed using a simplified BPM. The distinctive feature of this switch/modulator is that all its waveguide branches are designed as single-mode. The principle of the device is based on the coupled mode theory in the Y-junction interconnecting waveguide. In spite of the fact all waveguides are designed as single-mode, by adjusting the interconnecting waveguide length'of the device the same characteristics as existing up to date devices are obtainable. Numerical results show that the switching characteristics periodically depend upon an interconnecting waveguide length with a spatial of about $150^{{\mu}m}$ in the $Ti:LiNbO_3$ step index waveguide. The design concept would therefore be utilized effectively in fabricating a monolithic high density optical integrated circuit.

• 전기학회논문지
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• 제65권12호
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• pp.2014-2018
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• 2016

Transparent, conductive electrode films, showing the particular characteristics of good conductivity and high transparency, are of considerable research interest because of their potential for use in opto-electronic applications, such as smart window, photovoltaic cells and flat panel displays. Multilayer transparent electrodes, having a much lower electrical resistance than widely-used transparent conducting oxide electrodes, were prepared by using RF/DC magnetron sputtering system. The multilayer structure consisted of three layers, [NiInZnO(NIZO)/Ag/NIZO]. The optical and electrical properties of the multilayered NIZO/Ag/NIZO structure were investigated in relation to the thickness of each layer. The optical and electrical characteristics of multilayer structures have been investigated as a function of the Ag and NIZO film thickness. High-quality transparent conductive films have been obtained, with sheet resistance of $9.8{\Omega}/sq$ for Ag film thickness of 8 nm. Also the multilayer films of inserted Ag 8 nm thickness showed a high optical transmittance above 93% in the visible range. The electrical and optical properties of the new multilayer films were mainly dependent on the thickness of Ag insertion layer.

• 전기전자학회논문지
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• 제18권4호
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• pp.603-611
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• 2014

이미지 센서와 렌즈를 모듈 상에 고정할 때, 기계적인 오차로 인해 취득된 영상의 기울임 또는 회전이 발생하기도 하고 화각이 좁아지기도 한다. 따라서 테스트 장비에서 이미지 센서 모듈의 광학적 특성을 테스트하여야 한다. 본 논문에서는 이미지 센서 모듈의 광학적 특성을 테스트하는 방법을 설명하고, 이를 영상 취득 특성과 유사한 방식으로 표준화한 기술 방법을 제안한다. 제안된 방법은 테스트 장비가 영상 취득 특성과 광학적 특성을 함께 테스트하는데 도움이 된다.

• Transactions on Electrical and Electronic Materials
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• 제12권2호
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• pp.84-87
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• 2011

We fabricated phosphorescent organic light-emitting devices with a 1,1-bis[(di-4-tolylamino)phenyl]cyclohexane (TAPC) host layer. Two kinds of devices, one of ITO/TAPC/TAPC:FIrpic/TAZ/LiF/Al (device A) and one of ITO/TAPC:FIrpic/TAPC/TAZ/LiF/Al (device B), were prepared to investigate electrical and optical properties. Iridium(III) bis[(4,6-difluorophenyl)-pyridinato-N,$C^{2'}$]picolinate (FIrpic) and 3-(4-biphenylyl)-4-phenyl-5-(4-tert-butylphenyl)-1,2,4-triazole (TAZ) were used as a blue phosphorescent guest material and an electron transport layer, respectively. The TAPC layer in device B strongly contributes to whitish emission, higher driving voltage, and lower current efficiency characteristics compared with device A. The mechanisms of these electrical and optical characteristics of the devices were investigated.

• 한국전기전자재료학회논문지
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• 제20권9호
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• pp.776-779
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• 2007

In this study we present the effect of annealing temperatures on the structural, electrical and optical characteristics of Ga-doped ZnO (GZO) films. GZO target is deposited on coming 7059 glass substrates by DC sputtering. and then GZO films are annealed at temperatures of 400, 500, $600^{\circ}C$ in air ambient for 20 min. in this case of as-grown film, it shows the resistivity of $6{\times}10^{-1}{\Omega}{\cdot}cm$ and transmittance under 85%, whereas the electrical and optical properties of film annealed at $500^{\circ}C$ are enhanced up to $1.9{\times}10^{-3}{\Omega}{\cdot}cm$ and 90%, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.27-27
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• 2010

This paper describes the electrical and optical characteristics of $N_2$ doped porous 3C-SiC films. Average pore diameter is about 30 nm and etched area was increased with $N_2$ doping rate. The mobility was dramatically decreased in porous 3C-SiC. The band gaps of polycrystalline 3C-SiC films and doped porous 3C-SiC were 2.5 eV and 2.7 eV, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.66-67
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• 2007

We have developed reflective information display using opposite-charged two particles. An appropriate amount of both the yellow and the black powers are putted between the ITO patterned glass substrate separated with cell gap. The rib maintains the cell gap and prevents the interference between the pixels. When a negative voltage is applied to the upper ITO electrode, the positively charged black powder moves to the upper electrode viewing a black appearance. In case of positive voltage is applied to this electrode white particle is observed. So we analyzed the electrical and optical properties of our charged particle type display panel.

• 전기학회논문지
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• 제57권10호
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• pp.1829-1834
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• 2008

An optical switch/modulator is designed and the light propagating characteristics is analyzed by the simplified BPM. The distinctive feature of the switch/modulator is that all the waveguide branches are designed to be single-mode. Principle of the device is based on the coupled mode theory in the Y-junction interconnecting waveguide. In spite of all the waveguides are designed to be single-mode, adjusting the interconnecting waveguide length of the device, the same characteristics as existing device up to date is obtainable. Numerical results show that the switching characteristics periodically depends on the interconnecting waveguide length with a spatial of about 150${\mu}m$ in the Ti:LiNbO3 step index waveguide. The concept of design would be utilized effectively in fabricating the monolithic high density of optical integrated circuit.

• 조명전기설비학회논문지
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• 제15권2호
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• pp.7-12
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• 2001

본 논문에서는 광학설계프로그램을 이용하여 조명에 응용되는 LED 광원의 광학적 배치에 따른 특성 변화에 관한 연구를 하였다. 여러 유형별 시뮬레이션을 하기에 앞서 신뢰할 수 있는 기준광원을 만들었으며, 이를 이용하여 형태별 기본 배치와 각도별 기본 배치, 간격별 기본 배치의 3가지 유형별로 나누어 시뮬레이션을하여 그 변화값을 예측하였다. 그리고 안정적인 광출력 특성 및 원하는 광색을 얻기 위해서 고휘도 RGB LED의 전기적·광학적 특성을 고려한 광색 가변회로를 구성하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 춘계학술대회 논문집
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• pp.284-287
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• 1996

In this paper, we investigated the optical coupling characteristics for $K^{+}$ ion-exchanged diffused channel waveguide by using coupled-mode equations. In this case, the optical-power-dividing was observed at the waveguide-type optical coupler with 3[$\mu\textrm{m}$] line-width and, 6[$\mu\textrm{m}$] separation between channel waveguides in which interaction lengths were 1 and 3[mm], respectively, On the basis of that we deformed simulation for $Ag^{+}$ ion-exchanged diffused channel waveguide. As a result of simulation, the optical-power-dividing was shown at the waveguide-type optical coupler wish 3[$\mu\textrm{m}$] line-width, 6[$\mu\textrm{m}$] separation between channel waveguides and 0.11[mm] interaction length.