• Journal of Electrical Engineering and Technology
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• v.4 no.2
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• pp.287-291
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• 2009

In this paper, an optical switch/modulator is designed and its light propagating characteristics analyzed using a simplified BPM. The distinctive feature of this switch/modulator is that all its waveguide branches are designed as single-mode. The principle of the device is based on the coupled mode theory in the Y-junction interconnecting waveguide. In spite of the fact all waveguides are designed as single-mode, by adjusting the interconnecting waveguide length'of the device the same characteristics as existing up to date devices are obtainable. Numerical results show that the switching characteristics periodically depend upon an interconnecting waveguide length with a spatial of about $150^{{\mu}m}$ in the $Ti:LiNbO_3$ step index waveguide. The design concept would therefore be utilized effectively in fabricating a monolithic high density optical integrated circuit.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.65 no.12
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• pp.2014-2018
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• 2016

Transparent, conductive electrode films, showing the particular characteristics of good conductivity and high transparency, are of considerable research interest because of their potential for use in opto-electronic applications, such as smart window, photovoltaic cells and flat panel displays. Multilayer transparent electrodes, having a much lower electrical resistance than widely-used transparent conducting oxide electrodes, were prepared by using RF/DC magnetron sputtering system. The multilayer structure consisted of three layers, [NiInZnO(NIZO)/Ag/NIZO]. The optical and electrical properties of the multilayered NIZO/Ag/NIZO structure were investigated in relation to the thickness of each layer. The optical and electrical characteristics of multilayer structures have been investigated as a function of the Ag and NIZO film thickness. High-quality transparent conductive films have been obtained, with sheet resistance of $9.8{\Omega}/sq$ for Ag film thickness of 8 nm. Also the multilayer films of inserted Ag 8 nm thickness showed a high optical transmittance above 93% in the visible range. The electrical and optical properties of the new multilayer films were mainly dependent on the thickness of Ag insertion layer.

• Journal of IKEEE
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• v.18 no.4
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• pp.603-611
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• 2014

When image sensor and lens are fixed on the module, mechanical errors often induce tilt, rotation, or narrow field-of-view of the acquired image. Therefore, the optical characteristics of image sensor modules should be tested by test equipments. This paper explains how to test the optical characteristics of images sensors. It also proposes the standardized description methods of optical characteristics tests which are similar with those of image acquisition characteristics tests. The proposed method helps the test equipments to perform image acquisition characteristics tests and optical characteristics tests together.

• Transactions on Electrical and Electronic Materials
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• v.12 no.2
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• pp.84-87
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• 2011

We fabricated phosphorescent organic light-emitting devices with a 1,1-bis[(di-4-tolylamino)phenyl]cyclohexane (TAPC) host layer. Two kinds of devices, one of ITO/TAPC/TAPC:FIrpic/TAZ/LiF/Al (device A) and one of ITO/TAPC:FIrpic/TAPC/TAZ/LiF/Al (device B), were prepared to investigate electrical and optical properties. Iridium(III) bis[(4,6-difluorophenyl)-pyridinato-N,$C^{2'}$]picolinate (FIrpic) and 3-(4-biphenylyl)-4-phenyl-5-(4-tert-butylphenyl)-1,2,4-triazole (TAZ) were used as a blue phosphorescent guest material and an electron transport layer, respectively. The TAPC layer in device B strongly contributes to whitish emission, higher driving voltage, and lower current efficiency characteristics compared with device A. The mechanisms of these electrical and optical characteristics of the devices were investigated.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.9
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• pp.776-779
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• 2007

In this study we present the effect of annealing temperatures on the structural, electrical and optical characteristics of Ga-doped ZnO (GZO) films. GZO target is deposited on coming 7059 glass substrates by DC sputtering. and then GZO films are annealed at temperatures of 400, 500, $600^{\circ}C$ in air ambient for 20 min. in this case of as-grown film, it shows the resistivity of $6{\times}10^{-1}{\Omega}{\cdot}cm$ and transmittance under 85%, whereas the electrical and optical properties of film annealed at $500^{\circ}C$ are enhanced up to $1.9{\times}10^{-3}{\Omega}{\cdot}cm$ and 90%, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.27-27
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• 2010

This paper describes the electrical and optical characteristics of $N_2$ doped porous 3C-SiC films. Average pore diameter is about 30 nm and etched area was increased with $N_2$ doping rate. The mobility was dramatically decreased in porous 3C-SiC. The band gaps of polycrystalline 3C-SiC films and doped porous 3C-SiC were 2.5 eV and 2.7 eV, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.66-67
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• 2007

We have developed reflective information display using opposite-charged two particles. An appropriate amount of both the yellow and the black powers are putted between the ITO patterned glass substrate separated with cell gap. The rib maintains the cell gap and prevents the interference between the pixels. When a negative voltage is applied to the upper ITO electrode, the positively charged black powder moves to the upper electrode viewing a black appearance. In case of positive voltage is applied to this electrode white particle is observed. So we analyzed the electrical and optical properties of our charged particle type display panel.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.57 no.10
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• pp.1829-1834
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• 2008

An optical switch/modulator is designed and the light propagating characteristics is analyzed by the simplified BPM. The distinctive feature of the switch/modulator is that all the waveguide branches are designed to be single-mode. Principle of the device is based on the coupled mode theory in the Y-junction interconnecting waveguide. In spite of all the waveguides are designed to be single-mode, adjusting the interconnecting waveguide length of the device, the same characteristics as existing device up to date is obtainable. Numerical results show that the switching characteristics periodically depends on the interconnecting waveguide length with a spatial of about 150${\mu}m$ in the Ti:LiNbO3 step index waveguide. The concept of design would be utilized effectively in fabricating the monolithic high density of optical integrated circuit.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.15 no.2
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• pp.7-12
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• 2001

In this paper, the optical arrangement of LED lamps was studied using an optical design software for illumination applications. A standard source was constructed, and then simulated its light distribution characteristics of the basic arrangements by shape, by angle, and by displacement. And the color variation circuit was constructed to obtain stabilized light and color output in consideration of the electrical and optical characteristics of high brightness RGB LEDs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.05a
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• pp.284-287
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• 1996

In this paper, we investigated the optical coupling characteristics for $K^{+}$ ion-exchanged diffused channel waveguide by using coupled-mode equations. In this case, the optical-power-dividing was observed at the waveguide-type optical coupler with 3[$\mu\textrm{m}$] line-width and, 6[$\mu\textrm{m}$] separation between channel waveguides in which interaction lengths were 1 and 3[mm], respectively, On the basis of that we deformed simulation for $Ag^{+}$ ion-exchanged diffused channel waveguide. As a result of simulation, the optical-power-dividing was shown at the waveguide-type optical coupler wish 3[$\mu\textrm{m}$] line-width, 6[$\mu\textrm{m}$] separation between channel waveguides and 0.11[mm] interaction length.