• Journal of the Korea Institute of Information and Communication Engineering
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• v.26 no.11
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• pp.1666-1671
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• 2022

The structure of a high-power gain-flattened long wavelength band (L-band) optical amplifier was optimized, which was implemented for 64-channel wavelength division multiplexed optical signals with a channel spacing of 50 GHz. The output characteristics of this L-band amplifier were measured and analyzed. The amplifier of the optimized two-stage amplification configuration had a flattened gain of 20 dB within 1 dB deviation between 1570 and 1600 nm for -2 dBm input power condition. The noise figure under this condition was minimized to within 6 dB in the amplification bandwidth. The gain flattening was realized by considering only the characteristics of gain medium in the amplifier without using additional optical or electrical devices. The proposed amplifier consisted of two stages of amplification stages, each of which was based on the erbium-doped fiber amplifier (EDFA) structure. The erbium-doped fiber length and pumping structures in each stage of the amplifier were optimized through experiments.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.31 no.8A
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• pp.735-744
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• 2006

In this paper, the optimum pump light powers of optical phase conjugator(OPC) are numerically investigated as a function of amplifier spacing in 1,200 km $8{\times}40$ Gbps WDM systems with 0.1, 0.4, 0.8, or 1.6 ps/nm/km dispersion coefficient. It is confirmed that the variation of optimal pump light power dependence on amplifier spacing for NRZ transmission system is smaller than that for RZ transmission system through the evaluations and analysis of eye opening penalty(EOP) characteristics. And, in both cases of NRZ and RZ transmission, the variation of optimal pump light power is more increased as amplifier spacing becomes longer. Additionally, it is confirmed that the best amplifier spacing in NRZ and RZ transmission system is 50 km.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.3
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• pp.52-59
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• 1997

Design and performance of principal four ICs for the 10-Gb/s optical communication system are presented. AlGaAs/GaAs HBTs are basic devices to implement a laser diode driver, apre-amplifier, and a limiting amplifier, and GaInP/GaAs HBTs are used for an AGC amplifier. We fbricated 11.5-GHz LD driver, a pre-amplifier, and a limiting amplifier, an dGaInP/GaAs HBTs are used for an AGC amplifier. We fabricated LD deriver, 10.5 GHz pre amplifier, 7.2 GHz AGC amplifier, and 10.3 GHz limiting amplifier, optimized circuit design and the stabilized MMIC fabrication process.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.6
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• pp.70-77
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• 1994

A low noise erbium doped fiber amplifier for optical preamplification has been demonstrated. The amplifier incoporates an optical isolator in its midway to prevent decrease of population inversion at the input port due to backward traveling amplified spontaneous emission. Then, high gain and low noise can be achieved simultaneously. A small signal gain of 34dB and a noise figure of 5.5dB have been achieved. With this amplifier, we obtained a receiver sensitivity of -39.7dBm with back to back configuration and -39.3dBm with 47km normal fiber for 10$^{-9}$BER at 2.5Gbps direct modulated optical signal.

• Current Optics and Photonics
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• v.6 no.1
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• pp.32-38
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• 2022

Erbium-doped fiber amplifiers (EDFAs) have saturated the technological market but are still widely used in high-speed and long-distance communication systems. To overcome EDFA saturation and limitations, its erbium-doped fiber is co-doped with other materials such as zirconia and bismuth. This article demonstrates and compares the performance using three different fibers as the gain medium for zirconia-erbium-doped fibers (Zr-EDF), bismuth-erbium-doped fibers (Bi-EDF), and commercial silica-erbium-doped fibers (Si- EDF). The optical amplifier was configured with a double-pass amplification system, with a broadband mirror at the end of its configuration to allow double-pass operation in the system. The important parameters in amplifiers such as optical properties, optical amplification and noise values were also examined and discussed. All three fibers were 0.5 m long and entered with different input signals: 30 dBm for low input and 10 dBm for high input. Zr-EDF turned out to be the most relevant optical amplifier as it had the highest optical gain, longest transmission distance, highest average flatness gain with minimal jitter, and relevant noise figures suitable for the latest communication technology.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.12
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• pp.2025-2031
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• 1989

In this paper, using optical effect of characteristics of GaAs compound, two potential application of optical controlled GaAs MESFET are demonstrated` detector, microwave amplifier gain control. These lead to the possibility of the interaction with optical devices. The preliminary experiments show the light induced voltage, the increase in the drain currnet and the change in the microwave scattering parameters of GaAs MESFET under optical illumination(He-Ne laser). And imcrowave amplifier gain is round to be varied with changing in intensity of optical illumination.

• Journal of the Optical Society of Korea
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• v.10 no.1
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• pp.11-15
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• 2006

We have proposed and theoretically verified an optical regenerator using a single semi-reflective semiconductor optical amplifier (SR-SOA). To explain the operation characteristics and the operation condition of the proposed opticalregenerator, the simplified gain model for the SR-SOA is introduced and confirmed by comparing the result of the SOA simulation based on the transfer matrix method (TMM). The simulation results show that both extinction ratio (ER) enhancement and signal amplification can be achieved in the proposed regenerator.

• Journal of the Korea Society of Computer and Information
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• v.12 no.6
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• pp.243-249
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• 2007

I propose the excess noise suppressed optical sensor network using optical CDMA with gain saturated optical amplifier in order to increase number of sensors simultaneously connected to network. Simulation analyses confirm that the maximum number of sensors simultaneously connected to the optical sensor network can be largely increased by increasing the gain of gain saturated optical amplifier owing to the pression of access noises with the assignment of sweeping frequency of optical sensors within 10MHz. In the case of the requested SNR of 20dB and the sweeping frequency of 10MHz, the maximum number of sensors simultaneously connected to the optical sensor network can be increased four times as many as the conventional system.

• Korean Journal of Optics and Photonics
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• v.13 no.5
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• pp.421-424
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• 2002

By using SOA (Semiconductor Optical Amplifier) based devices, an all-optical half adder has been successfully demonstrated at 10 Gb/s. All-optical XOR and AND gates are utilized to realize SUM and CARRY. Since SUM and CARRY have been simultaneously realized to form the all-optical half adder, complex calculation and signal processing can be achieved.

• Journal of the Optical Society of Korea
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• v.18 no.5
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• pp.442-448
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• 2014

For the first time, a novel analytical model of the net gain for a Raman-EDFA hybrid optical amplifier (HOA) is proposed and its various parameters optimized using a genetic algorithm. Our method has been shown to be robust in the simultaneous analysis of multiple parameters (Raman length, EDFA length, and pump powers) to obtain large gain. The optimized HOA is further investigated at the system level for the scenario of a 50-channel DWDM system with 0.2-nm channel spacing. With an optimized HOA, a flat gain of >17 dB is obtained over the effective ITU-T wavelength grid with a variation of less than 1.5 dB, without using any gain-flattening technique. The obtained noise figure is also the lowest value ever reported for a Raman-EDFA HOA at reduced channel spacing.