• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.131-131
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• 2010

The power of semiconductor laser diodes has been limited primarily by the heating effects which occur at high optical intensities. The actual limiting event can take one of a number of forms such as. catastrophic optical damage or filamentation. A general approach to this problem is to design a heterostructure which creates a high powered output while maintaining low internal optical intensities. A graded index separate confinement heterostructure (GRIN-SCH) is one such structure that accomplishes the above task. Here, the active region is sandwiched between graded index layers where the index of refraction increases nearer to the active layer. This structure has been shown to yield a high efficiency due to the confinement of both the optical power and carriers, thereby reducing the optical intensity required to achieve higher powers. The optical confinement also reinforces the optical beam quality against high power effects. Quantum dots have long been a desirable option for laser diodes due to the enhanced optical properties associated with the zeroth dimensionality. In our work, we use PICS3D software created by Crosslight Software Inc. to simulate the performance of In0.67A10.33As/A10.2Ga0.8AsquantumdotsusedwithaGRIN-SCH. The simulation tools are used to optimize the GRIN-SCH structure for high efficiency and optical beam quality.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.5 no.4
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• pp.777-790
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• 2001

Theoretical analyses have been tried to design high power and stable operating SLD at 1.55${\mu}{\textrm}{m}$ wavelength range which is the lowest absorption wavelength in optical fiber. The materials of active layer and SCH layer were chosen as conventional In1-xGaxAsyPl-y quaternary composition systems. From the transverse mode and the lateral mode analyses of waveguide, the optical power distributions and the optical confinement factor have been studied for single-mode high power operation. According to these analyses, it was calculated the composition and the thickness of SCH layer to obtain the maximum optical confinement factor. In order to obtain low values of the reflectivity, we used the window region and the lateral tilted angle between tile active region and window region. And the reflectivity of SLD was calculated with the gaussian beam approximation and mode analysis. From these researches, it was confirmed for several results to fabricate the efficient and stable SLD. In case of using $1.3\mum$, InGaAsP SCH layer, the layer thickness was obtained $0.08\mum$, to get the maximum optical confinement factor. Using $0.2\mum$, active layer thickness and $0.08\mum$, SCH layer thickness, the window region length is about $100\mum$ without An coating, $10\mum$ in 1% AR coating to obtain about 10-4 reflectivity. When the tilted angle is about $10~15^{\circ}$, the reflectivity is about 10-3. From these results, if the window region length and tilted angle were controlled appropriately in given device structure, it was confirmed that it is possible to fabricate the stable SLD without AR coating analytically.

• Journal of the Institute of Electronics Engineers of Korea TE
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• v.37 no.5
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• pp.17-27
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• 2000

In a SCH(separate confinement heterostructure) QW(quantum well) laser, we calculated the optical gain, the differential gain and recombination current in the QW and derived the bulk carrier density in the SCH region as a function of the QW current by using the analytical capture escape model. Based upon above relations, we found the optical gain and the differential gain correspond to the ratios of carrier and current injected into the QW.

• Proceedings of the Optical Society of Korea Conference
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• 1991.06a
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• pp.139-143
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• 1991

GRIN-SCH quantum well structured Laser Diode were fabricated using MOCVD and operated as CW at room temperature. The threshold current density of the LD with 670${\mu}{\textrm}{m}$ cavity length was 530 A/$\textrm{cm}^2$. For the ridge waveguide type index guiding structured LD with 6${\mu}{\textrm}{m}$ stripe width and 240${\mu}{\textrm}{m}$ cavity length, the threshold current was 50㎃. The maximum differential quantum efficiency was 0.95W/A when the optical output was 60mW. The lasing wavelength of QW LD was 865nm. In the L-I measurement. TE mode was superior to TM mode. From the near field pattern, single lateral mode operation was observed.

• Current Optics and Photonics
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• v.3 no.6
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• pp.583-589
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• 2019

We report experimental results on 940-nm 350-mW AlGaAs/InGaAs transverse single-mode laser diodes (LDs) adopting graded-index separate confinement heterostructures (GRIN-SCH) and p,n-clad asymmetric structures, with improved temperature and small-divergence beam characteristics under high-output-power operation, for a three-dimensional (3D) motion-recognition sensor. The GRIN-SCH design provides good carrier confinement and prevents current leakage by adding a grading layer between cladding and waveguide layers. The asymmetric design, which differs in refractive-index distribution of p-n cladding layers, reduces the divergence angle at high-power operation and widens the transverse mode distribution to decrease the power density around emission facets. At an optical power of 350 mW under continuous-wave (CW) operation, Gaussian narrow far-field patterns (FFP) are measured with the full width at half maximum vertical divergence angle to be 18 degrees. A threshold current (I_th) of 65 mA, slope efficiency (SE) of 0.98 mW/mA, and operating current (I_op) of 400 mA are obtained at room temperature. Also, we could achieve catastrophic optical damage (COD) of 850 mW and long-term reliability of 60℃ with a TO-56 package.

• Journal of the Optical Society of Korea
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• v.15 no.2
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• pp.124-127
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• 2011

Quantum dots were designed within a GRIN-SCH(Graded index - Separate confinement Heterostructure) heterostructure to create a high power InAlAs/AlGaAs laser diode. 808 nm light emission was with a quantum dot composition of In0.665Al0.335As and wetting layer composition of Al0.2Ga0.8As by LASTIP simulation software. Typical characteristics of GRIN structures such as high confinement ratios and Gaussian beam profiles were shown to still apply when quantum dots are used as the active media. With a dot density of 1.0x1011 dots/cm2, two quantum dot layers were found to be good enough for low threshold, high-power laser applications.

• Proceedings of the Optical Society of Korea Conference
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• 2000.08a
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• pp.26-27
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• 2000

고휘도 다이오드(Superluminescent Diodes : SLD)는 fiber gyroscope의 광원으로서 가장 적당한 소자로 알려져 있다$^{(1)}$ . 본 연구는 실제의 광섬유 자이로 스코프에 적용하기 위하여 활성층의 발진파장이 1.55$mu extrm{m}$인 SLD의 제작을 목적으로 하고 있다. SLD제작의 핵심은 거울면에서의 반사도를 낮추어 거울면의 반사에 의하여 일어나는 발진을 억제하는 것으로, 이를 위하여 단면이 각을 가진 stripe$^{(2)}$ , 계면의 무반사 코팅(antireflection coating : AR coating)$^{(3)}$ , window buried heterostructure$^{(4)}$ , unpumped absorbing region$^{(5)}$ , bent-buried absorbing region$^{(6)}$ 등과 같은 방법이 이용이 되고 있다 (중략)

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.05a
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• pp.370-373
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• 2003

Superluminescent diodes(SLDs) are the optimum light sources for application in optical measurement systems such as fiber gyroscopes, optical time domain reflectometers, and to short and medium distance optical communication systems. The broadband characteristics of SLDs reduce Rayleigh backscattering noise, polarization noise, and the bias offset due to the nonlinear Kerr effect in fiber gyro systems. In this paper, in order to suppress lasing oscillation, we introduced a laterally tilted SCH(Separate Confinement Heterostructure)-SLD with a window region. An output power of 11mW has been achieved at 200mA injection current at 25$^{\circ}C$. At 120mA, parallel and perpendicular to the junction were 31$^{\circ}$${\times}$38$^{\circ}$.

• Journal of Navigation and Port Research
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• v.26 no.2
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• pp.235-243
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• 2002

Theoretical analysis have been performed to design the high power semiconductor laser for an optical sensor at 1.55${\mu}{\textrm}{m}$ wavelength range which is the lowest loss wavelength in optical fiber. The materials of active region and SCH were $Ln_{1-x}Ga_xAs_yP_{1-y}$. In order to use the light source of optical sensors, it has to satisfy wide spectral width and short coherence length. Therefore, in order to suppress lasing oscillation, we proposed laterally tilted PBH type with a window region. Also, tapered stripe structure was applied for high coupling efficiency into a single mode fiber. From these analyses, the devices of laterally tilted angled and bending structure were fabricated and their characteristics were measured. In the results of the measurement, the fabricated devices have sufficient output power and wide FWHM to apply to the light source of optical fiber sensors.

• Journal of electromagnetic engineering and science
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• v.3 no.2
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• pp.79-85
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• 2003

In this paper, we investigated the degree of compensation for distorted optical pulse of wavelength division multiplexed(WDM) channel with initial frequency chirp generated in optical transmitter. The WDM channel signal distortion is due to chromatic dispersion, self phase modulation(SPM) and cross phase modulation(XPM) in fiber. The considered system is 3 ${\times}$ 40 Gbps intensity modulation direct detection(IM/DD) WDM transmission systems, which adopted mid-span spectral inversion(MSSI) as compensation method. We confirmed that the effect of initial frequency chirp on compensation for signal distortion due to a SPM is gradually decreased as a dispersion coefficient of fiber becomes gradually small. But, in the aspect of a compensation for signal distortion due to both SPM and XPM, the effect of initial frequency chirp on compensation is gradually decreased as a dispersion coefficient of fiber becomes gradually large.