• Korean Journal of Materials Research
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• v.28 no.9
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• pp.516-521
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• 2018

Copper oxide thin films are deposited using an ultrasonic-assisted spray pyrolysis deposition (SPD) system. To investigate the effect of substrate temperature and incorporation of a chelating agent on the growth of copper oxide thin films, the structural and optical properites of the copper oxide thin films are analyzed by X-ray diffraction (XRD), field-emssion scanning electron microscopy (FE-SEM), and UV-Vis spectrophotometry. At a temperature of less than $350^{\circ}C$, three-dimensional structures consisting of cube-shaped $Cu_2O$ are formed, while spherical small particles of the CuO phase are formed at a temperature higher than $400^{\circ}C$ due to a Volmer-Weber growth mode on the silicon substrate. As a chelating agent was added to the source solutions, two-dimensional $Cu_2O$ thin films are preferentially deposited at a temperature less than $300^{\circ}C$, and the CuO thin film is formed even at a temperature less than $350^{\circ}C$. Therefore the structure and crystalline phase of the copper oxide is shown to be controllable.

• Bulletin of the Korean Chemical Society
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• v.30 no.4
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• pp.853-856
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• 2009

Highly polycrystalline copper indium diselenide (CuInSe2, CIS) thin films were deposited on glass or ITO glass substrates by two-stage metal organic chemical vapor deposition (MOCVD) at relatively mild conditions, using Cuand In/Se-containing precursors. First, pure Cu thin film was prepared on glass or ITO glass substrates by using a single-source precursor, bis(ethylbutyrylacetate)copper(II) or bis(ethylisobutyrylacetato)copper(II). Second, on the resulting Cu films, tris(N,N-ethylbutyldiselenocarbamato)indium(III) was treated to produce CuInSe2 films by MOCVD method at 400 ${^{\circ}C}$. These precursors are very stable in ambient conditions. In our process, it was quite easy to obtain high quality CIS thin films with less impurities and uniform thickness. Also, it was found that it is easy to control the stoichiometric ratio of relevant elements on demands, leading to Cu or In rich CIS thin films. These CIS films were analyzed by XRD, SEM, EDX, and Near-IR spectroscopy. The optical band gap of the stoichiometric CIS films was about 1.06 eV, which is within an optimal range for harvesting solar radiation energy.

• Korean Journal of Optics and Photonics
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• v.8 no.3
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• pp.213-217
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• 1997

We have measured photoluminescence (PL) and time-resolved PL in doped-GaAs. As increasing doping concentration, the PL spectra of n-type GaAs shift to higher energies while the PL spectra of p-type GaAs shift to lower energies than the bandgap of the undoped GaAs. The contribution of the Burstein-Moss effect overrules the band-gap narrowing in n-type GaAs, contrary to p-type GaAs. The PL rise time and decay time become shorter as increasing doping concentration. The PL rise and decay time in doped-GaAs depend on the type of majority carriers and their concentrations, which imply that the carrier-carrier interaction plays an important role in the energy relaxation processes.

• Journal of Electrical Engineering and Technology
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• v.9 no.3
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• pp.1009-1015
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• 2014

Chalcopyrite $CuInSe_2$ (CIS) thin films were prepared without Se- / S-containing gas by co-sputtering using $CuSe_2$ and $InSe_2$ selenide-targets and rapid thermal annealing. The grain size increased to a maximum of 54.68 nm with a predominant (112) plane. The tetragonal distortion parameter ${\eta}$ decreased and the inter-planar spacing $d_{(112)}$ increased in the RTA-treated CIS thin films annealed at a $400^{\circ}C$, which indicates better crystal quality. The increased carrier concentration of RTA-treated p-type CIS thin films led to a decrease in resistivity due to an increase in Cu composition at annealing temperatures ${\geq}350^{\circ}C$. The optical band gap energy ($E_g$) of CIS thin films decreased to 1.127 eV in RTA-treated CIS thin films annealed at $400^{\circ}C$ due to the improved crystallinity, elevated carrier concentration and decreased In composition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.160-162
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• 2003

ZnO epilayer were synthesized by the pulesd laser deposition(PLD) process on $Al_2O_3$ substrate after irradiating the surface of the ZnO sintered pellet by the ArF(193nm) excimer laser. The substrate temperatures was $400^{\circ}C$. The crystalline structure of epilayer was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of ZnO epilayer measured with Hall effect by van der Pauw method are $8.27{\times}10^{16}\;cm^{-3}\;and\;299\;cm^2V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;3.3973\;eV\;-\;(2.69{\times}10^{-4}\;eV/K)T^2/(T\;+\;463K)$. After the as-grown ZnO epilayer was annealed in Zn atmospheres, oxygen and vaccum the origin of point defects of ZnO atmospheres has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{Zn}$, Vo, $Zn_{int}$, and $O_{int}$ obtained by PL measurements were classified as a donors or accepters type.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.108-109
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• 2006

ZnO semiconductor has a wide band gap of 3.37 eV and a large exciton binding energy of 60 meV, and displays excellent sensing and optical properties. In particular, ZnO based 1D nanowires and nanorods have received intensive attention because of their potential applications in various fields. We grew ZnO buffer layers prior to the growth of ZnO nanorods for the fabrication of the vertically well-aligned ZnO nanorods without any catalysts. The ZnO nanorods were grown on Si (111) substrates by vertical MOCVD. The ZnO buffer layers were grown with various thicknesses at $400^{\circ}C$ and their effect on the formation of ZnO nanorods at $300^{\circ}C$ was evaluated by FESEM, XRD, and PL. The synthesized ZnO nanorods on the ZnO film show a high quality, a large-scale uniformity, and a vertical alignment along the [0001]ZnO compared to those on the Si substrates showing the randomly inclined ZnO nanorods. For sample using ZnO buffer layer, 1D ZnO nanorods with diameters of 150-200 nm were successively fabricated at very low growth temperature, while for sample without ZnO buffer the ZnO films with rough surface were grown.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.308-309
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• 2012

One of the critical issues in the growth of multijunction solar cell is the formation of a highly doped Esaki interband tunnel diode which interconnects unit cells of different energy band gap. Small electrical and optical losses are the requirements of such tunnel diodes [1]. To satisfy these requirements, tens of nanometer thick gallium arsenide (GaAs) can be a proper candidate due to its high carrier concentration in low energy band gap. To obtain highly doped GaAs in molecular beam epitaxy, the temperatures of Si Knudsen cell (K-cell) for n-type GaAs and Be K-cell for p-type GaAs were controlled during GaAs epitaxial growth, and the growth rate is set to 1.75 A/s. As a result, the doping concentration of p-type and n-type GaAs increased up to $4.7{\times}10^{19}cm^{-3}$ and $6.2{\times}10^{18}cm^{-3}$, respectively. However, the obtained n-type doping concentration is not sufficient to form a properly operating tunnel diode which requires a doping concentration close to $1.0{\times}10^{19}cm^{-3}$ [2]. To enhance the n-type doping concentration, n-doped GaAs samples were grown with a lower growth rate ranging from 0.318 to 1.123 A/s at a Si K-cell temperature of $1,180^{\circ}C$. As shown in Fig. 1, the n-type doping concentration was increased to $7.7{\times}10^{18}cm^{-3}$ when the growth rate was decreased to 0.318 A/s. The p-type doping concentration also increased to $4.1{\times}10^{19}cm^{-3}$ with the decrease of growth rate to 0.318 A/s. Additionally, bulk resistance was also decreased in both the grown samples. However, a transmission line measurement performed on the n-type GaAs sample grown at the rate of 0.318 A/s showed an increased specific contact resistance of $6.62{\times}10^{-4}{\Omega}{\cdot}cm^{-2}$. This high value of contact resistance is not suitable for forming contacts and interfaces. The increased resistance is attributed to the excessively incorporated dopant during low growth rate. Further studies need to be carried out to evaluate the effect of excess dopants on the operation of tunnel diode.

• Journal of Sensor Science and Technology
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• v.23 no.1
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• pp.51-57
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• 2014

The evaporating materials for $MgGa_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $MgGa_2Se_4$ compounded polycrystal powder was deposited on thoroughly etched semi-insulated GaAs(100) substrate by the hot wall epitaxy (HWE) method system. The source and substrate temperatures of optimized growth conditions, were $610^{\circ}C$ and $400^{\circ}C$, respectively.The source and substrate temperatures were $610^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by double crystal X-ray diffraction (DCXD). The temperature dependence of the energy band gap of the $MgGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=2.34\;eV-(8.81{\times}10^{-4}\;eV/K)T^2/(T+251\;K)$. After the as-grown $MgGa_2Se_4$ single crystal thin films was annealed in Mg-, Se-, and Ga-atmospheres, the origin of point defects of $MgGa_2Se_4$ single crystal thin films has been investigated by the photoluminescence (PL) at 10 K. The native defects of $V_{Mg}$, $V_{Se}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Se-atmosphere converted $MgGa_2Se_4$ single crystal thin films to an optical n-type. Also, we confirmed that Ga in $MgGa_2Se_4$/GaAs did not form the native defects because Ga in $MgGa_2Se_4$ single crystal thin films existed in the form of stable bonds.

• Journal of the Korean institute of surface engineering
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• v.56 no.3
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• pp.208-218
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• 2023

Photocatalysts are advanced materials which accelerate the photoreaction by providing ordinary reactions with other pathways. The catalysts have various advantages, such as low-cost, low operating temperature and pressure, and long-term use. They are applied to environmental and energy field, including the air and water purification, water splitting for hydrogen production, sterilization and self-cleaning surfaces. However, commercial photocatalysts only absorb ultraviolet light between 100 and 400 nm of wavelength which comprises only 5% in sunlight due to the wide band gap. In addition, rapid recombination of electron-hole pairs reduces the photocatalytic performance. Recently, studies on blackening photocatalysts by laser, thermal, and plasma treatments have been conducted to enhance the absorption of visible light and photocatalytic activity. The disordered structures could yield mid-gap states and vacancies could cause charge carrier trapping. Herein, liquid phase plasma (LPP) is adopted to synthesize Ag-doped black ZnO for the utilization of visible-light. The physical and chemical characteristics of the synthesized photocatalysts are analyzed by SEM/EDS, XRD, XPS and the optical properties of them are investigated using UV/Vis DRS and PL analyses. Lastly, the photocatalytic activity was evaluated using methylene blue as a pollutant.

• Applied Chemistry for Engineering
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• v.25 no.5
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• pp.487-496
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• 2014

In this study, three kinds of polymers based on phenothiazine-benzothiadiazole were synthesized by a Suzuki coupling reaction, and the various side-chains were substituted at the nitrogen of phenothiazine. The optical and electrochemical properties of synthesized polymers were analyzed. The results indicate that their absorption ranged from 300 to 700 nm, and also confirmed the ideal highest occupied molecular orbital (HOMO) energy level was about -5.4 eV with low band-gap energy. Photovoltaic devices were fabricated using a photoactive layer composed of a blended solution of the polymer and $PC_{71}BM$ in ortho-dichlorobenzene The device with P2HDPZ-bTP-OBT containing the branched side-chain and long chain showed the best performance; the maximum power conversion efficiency of this device was 2.4% (with $V_{OC}$ : 0.74 V, $J_{SC}$ : $6.9mA/cm^2$, FF : 48.0%).