• 한국정밀공학회지
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• 제9권2호
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• pp.22-28
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• 1992

This paper is studied about the method to measure the fine scratches on the mirror surfaces, such as the silicon wafer and magnetic memory disk by the optical measuring method. The theoretical background of this analysis is based upon the light scattering theory developed by Beckmann. In this analysis, the roughness in fine scratches is not considered because the aberage roughness is very small compared with the size of fine scratches. Empasis is on quantilaive method of fine scratches by non-contact method. Experiments are followed by the image processing system attached to the CCD Camera. As a results, I propose the new method to measure the size of the fine scratches from the parameters obtained by the computer simulation and experiments.

• 전자공학회논문지A
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• 제31A권12호
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• pp.38-43
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• 1994

GaAs and AlGaAs layers were grown by Molecular Beam Epitaxy (MBE) to fabricate hith performance GaAs MESFETs. Optimum growth temperatures were found to be 600$^{\circ}C$ from their Hall measurement data. MESFETs with the gate legth of 1${\mu}$m and the gate width of 100.mu.m were fabricated on the MBE-grown GaAs layters which has i-GaAs buffer layer and characterized. Knee volgate and mazimum transconductance of the devices were 1V, 224mS/mm, respectively. Cut-off frequency at on-wafer measuring pattern was measured to be 18 GHz. The MESFET with the 1${\mu}$m -thick i-Al$_{0.3}Ga_{0.7}$As buffer layer between nactive and i-GaAs was fabricated on order to reduce the leakage current which flows through the i-GaAs buffer layer. Its output resistance was 2.26 k${\Omega}$.mm which increased by a factor of 15 compared with the MESFET without i-Al$_{0.3}Ga_{0.7}$As buffer layer.

• 반도체디스플레이기술학회지
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• 제1권1호
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• pp.1-7
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• 2002

Modem technology depends on the reliability of extremely high precision equipments. In the production of semiconductor wafer, optical and electron microscopes, ion-beam, laser device must maintain their alignments within a sub-micrometer. This equipment requires a vibration free environment to provide its proper function. Therefore, this high technology equipments require very strict environmental vibration criteria because it is used as basic data for the design of building structure and structural dynamics of equipment. In this paper, the new approach is proposed to investigate the mismatch problem of time and frequency domain for vibration criteria of sensitive equipment. The proposed approach is based on a vibration measurement data and a relative transfer function which can be obtained by experiment or analysis.

• 한국전자파학회논문지
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• 제16권10호
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• pp.989-994
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• 2005

위성통신 시스템의 초고주파 스위치 메트릭스(MSM)를 위한 MMIC 스위치 칩을 InGaAs/GaAs p-HEMT 공정을 이용하여 설계 및 제작하였다. MMIC 스위치는 on과 off상태에서 우수한 입출력 반사계수를 위해 흡수형으로 설계되었다. 또한, 스위치 칩의 크기를 줄이기 위해 MIM 커패시터와 spiral 인덕터의 집중소자를 이용하여 3 GHz 대역에서의 ${\lambda}/4$ 임피던스 변환기를 구현하였다. 설계된 MMIC 스위치는 $3.2\~3.6\;GHz$ 대역에서 사용할 수 있으며 $1.6\;mm{\times}1.3\;mm$의 칩 크기를 갖는다. On-wafer 측정 결과, 2 dB 이하의 삽입 손실과 56.8 dB 이상의 격리도 특성을 나타내었다. 이와 같은 측정 결과는 시뮬레이션 결과와 잘 일치하는 것이다.

• 대한기계학회논문집B
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• 제34권1호
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• pp.73-76
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• 2010

MEMS 기술이 발전함에 따라 MEMS 공정으로 제작된 미소 구조물들의 검사 및 특성 분석이 매우 중요한 문제로 떠오르고 있다. 그러나 주사 전자현미경(SEM)이나 원자현미경(AFM) 그리고 기계적 표면측정장치 등은 가격적인 측면에서나 방법적인 측면에서 많은 단점을 안고 있다. 본 논문에서는 DVD 광 픽업 장치를 이용하여 미소구조물을 높이를 측정하였다. 미소구조물 시편에서 반사된 빛의 강도를 측정하여 시편의 영상을 만들어냈고 미소구조물의 높이는 포토다이오드에서 측정된 포커스에러신호(FES)을 통해 구할 수 있었다. 제시된 광 픽업 스캐너는 기존 측정 장치와 비교하여 저렴한 비용으로 정밀한 측정이 가능함을 보여주었고, 기존의 기술을 대체할 수 있는 시스템으로 사용될 수 있을 것이다.

• 센서학회지
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• 제13권4호
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• pp.264-269
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• 2004

This paper describes on an advanced technology of 3C-SiC/Si(100) wafer direct bonding using PECVD oxide to intermediate layer for SiCOI(SiC-on-Insulator) structure because it has an attractive characteristics such as a lower thermal stress, deposition temperature, more quick deposition rate and higher bonding strength than common used poly-Si and thermal oxide. The PECVD oxide was characterized by ATR-FTIR. The bonding strength with variation of HF pre treatment condition was measured by tensile strength measurement system. After etch-back using TMAH solution, roughness of 3CSiC surface crystallinity and bonded interface was measured and analyzed by AFM, XRD, and SEM respectively.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2008년도 추계학술대회A
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• pp.1902-1907
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• 2008

The current work presents a design and fabrication technique for a microchannel system to measure the local temperature distribution inside microchannel. This micro channel system fabricated by MEMS technique is integrated with a heater and an array of temperature sensors so that detailed heat transfer phenomena inside micro-scale channel can be studied. Materials widely used in semiconductor process were selected to fabricate a heater and temperature sensors on a silicon wafer. On these heater and sensors a channel wall was fabricated with SU-8. The friction constant and the local Nusselt number distribution measured for the deionized water flow in the microchannel is presented.

• 한국전기전자재료학회논문지
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• 제14권5호
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• pp.410-416
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• 2001

KLN thin films were fabricated on Pt coated Si(100) wafer using an rf-magnetron sputtering method. The grown KLN thin film consists of 4-fold grains. In this experiment, the structure of 4-fold grained thin film was investigated using XRD and SEM measurements. Pt layer was also deposited using the rf-magnetron sputtering method,. XRD measurement showed that he Pt thin film has Gaussian distribution form with strong (111) direction orientation. The KLN thin film has preferred-orientation of (001) direction, and the peak consists of 2 separate peaks; one with broad FWHM and the other with narrow FWHM. The sharp peak is due to single crystal, and combining with Em results, the 4-fold grain consists of singel crystals with c-axis normal to substrate.

• 한국전기전자재료학회논문지
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• 제13권9호
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• pp.776-780
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• 2000

ZnGa$_2$O$_4$thin films were prepared on Si(100) wafer in terms of RF power, substrate temperatures and Ar/O$_2$flow rate by RF Magnetron Sputtering. Photoluminescence(PL) measurement was employed to observe the emission spectra of ZnGa$_2$O$_4$films. The influences of various deposition parameters on the properties of grown films were studied. The optimum substrate deposition temperature for luminous characteristics was about 50$0^{\circ}C$ in this investigation. PL spectrum of ZnGa$_2$O$_4$ thin films showed broad band luminescence spectrum.

• Bulletin of the Korean Chemical Society
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• 제30권7호
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• pp.1593-1597
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• 2009

A biosensor has been developed based on induced wavelength shifts in the Fabry-Perot fringes in the visible reflection spectrum of appropriately derivatized thin films of porous silicon semiconductors. Porous silicon (PSi) was generated by an electrochemical etching of silicon wafer using two electrode configurations in aqueous ethanolic HF solution. Porous silicon displayed Fabry-Perot fringe patterns whose reflection maxima varied spatially across the porous silicon. The sensor system studied consisted of a mono layer of porous silicon modified with Protein A. The system was probed with various fragments of an aqueous Human Immunoglobin G (Ig G) analyte. The sensor operated by measurement of the Fabry-Perot fringes in the white light reflection spectrum from the porous silicon layer. Molecular binding was detected as a shift in wavelength of these fringes.