• International Journal of Aeronautical and Space Sciences
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• 제7권1호
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• pp.54-64
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• 2006

To augment weakly damped lag mode stability of a hingeless helicopter rotor blade in hover, piezoelectric shunt with a resistor and an inductor circuits for passive damping has been studied. A shunted piezoceramics bonded to a flexure of rotor blade converts mechanical strain energy to electrical charge energy which is dissipated through the resistor in the R-L series shunt circuit. Because the fundamental lag mode frequency of a soft-in-plane hingeless helicopter rotor blade is generally about 0.7/rev, the design frequency of the blade system with flexure sets to be so. Experimentally, the measured lag mode frequency is 0.7227/rev under the short circuit condition. Therefore the suppression mode of this passive damping vibration absorber is adjusted to 0.7227/rev. As a result of damping enhancement using passive control, the passive damper which consists of a piezoelectric material and shunt circuits has a stabilizing effect on inherently weakly damped lag mode of the rotor blades, at the optimum tuning and resistor condition.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1994년도 하계학술대회 논문집 C
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• pp.1633-1635
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• 1994

This paper presents the development technology of standard resistor divider for full lightning impulse voltage. The ability of high voltage bulk power equipment to withstand lighting stroke is usually evaluated by means of full lightning impulse voltage. Lightning impulse voltage test has been essential to evaluate the insulation performance of electrical power apparatus. Recently International standard (IEC 60) on high voltage measurement techniques is being revised and requests a formal traceability of high voltage measurements. Therefore, general interest for this area has grown considerably during last years, and several international intercomparisions have been completed already worldwide, i.e. Europe, Japan, America etc.. In this viewpoint, we have also investigated the standard resistor divider with shield, which satisfies the IEC recommendation.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2002년도 하계종합학술대회 논문집(1)
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• pp.439-442
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• 2002

We present in this Paper a microwave Power sensor fabricated by a standard CMOS process and a bulk micromachining process. The sensor consists of a CPW transmission line, a resistor as a healer, and thermocouple arrays. An input microwave heater, the resistor so that the temperature rises proportionally to the microwave power and tile thermocouple arrays convert it to an electrical signal. The sensor uses air bridged 8round of CPW realized by wire bonding to reduce tile device size and cost and to improve the thermal impedance. Al/poly-Si junctions are used for the thermocouples. Poly-Si is used for tile resister and Aluminium is for transmission line. The resistor and hot junctions of the thermocouples are placed on a low stress silicon nitride diaphragm to minimize a thermal loss. The fabricated device operates properly from 1㎼ to 100㎽\ulcorner of input power. The sensitivity was measured to be ,3.2～4.7 V/W.

• 한국가스학회지
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• 제8권1호
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• pp.18-24
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• 2004

본 연구에서는 가연성가스가 존재하는 위험지역에서 사용되는 본질안전방폭형 전기기기가 외부로부터 직류전원을 공급받을 때 방폭 성능을 유지하기 위한 부품의 조건을 실험을 통하여 알아보았다. 따라서 제너다이오드의 역방향 특성을 실험하였으며, IEC형 불꽃점화시험기를 사용하여 제너다이오드와 저항으로 구성된 전원부의 점화특성효과를 실험하였다. 이 실험을 통하여 안정화된 전원부에서 사용되는 제너다이오드와 저항의 필요용량 값을 계산하고 본질안전시스템을 유지하기 위한 본질안전방폭형 전원공급방법을 설계하여 제시하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.457-458
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• 2007

We investigated a resistor network model for the horizontal AlInGaN LED. Adding the proposed current density dependent relative quantum efficiency, the power simulation can be also obtained. Comparing the simulation and the measurement results for the LED with the size of $350{\mu}m$, the model is reasonable to simulate the forward voltage and the light output power. Using this model we investigated the optimization of the position and the number of the finger electrodes in a given chip area. It shows that the center disposition of the p-finger electrode in p-area is optimal for the voltage and best for the power. And the minimum number of the n-finger electrodes is best for the power.

• 한국컴퓨터정보학회논문지
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• 제5권3호
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• pp.76-83
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• 2000

CMOS기술의 발전에 의해 연속신호시스템은 상당한 발전을 가져왔다. 이 논문에서는 새로운 CMOS floating저항을 써서 저역통과필터를 설계하고 PSpice Simulation을 통하여 그 특성이 우수함을 입증하였다. 특히, CMOS로 구성되는 새로운 floating저항은 포화영역에서 동작하도록 구현하였다. 이 방법으로 설계된 저역통과필터는 SC필터보다 구조가 더 간단하므로 IC화 할 때 칩 면적을 감소시킬 수 있다.

• 대한전자공학회논문지SD
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• 제42권2호
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• pp.15-22
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• 2005

System-on-Glass 아날로그 회로를 구현하기 위해 요구되는 저항 matching 및 poly-Si TFT 특성을 기존 아날로그 회로를 이용하여 조사하였다. 저항 값, poly-Si TFT의 문턱전압 및 이동도의 matching 조건을 디스플레이 시스템의 해상도에 따라 유도하였다. 또한, 소스 드라이버를 구현하기 위해 요구되는 poly-Si TFT의 유효 이동도를 다양한 패널 크기에 따라서 분석하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 E
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• pp.1586-1588
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• 1998

To use the EMTP, in this paper, a arcing horn is simulated by non-linear resistor and inductor element using TACS, a tower by distributed parameter model, and lines as K. C. Lee model. Changing lightning current characteristics, lightning position, and tower footing resistor value, we analysis multi-phase flashover characteristics in 765 kV transmission line.

• 대한전자공학회논문지
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• 제7권4호
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• pp.1-5
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• 1970

본 논문에서는 전차선형초광대역 FM 변별기의 결합저항식(변별기에 사용된 전송선의 특성임피단스)와의 오차가 ±10%이내일 때 전송선형 FM 변별기의 입력임피단스와 출력파형의 디스토숀에 미치는 영향을 고찰했다.

• The Korean Journal of Ceramics
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• 제2권1호
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• pp.33-38
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• 1996

In thick film resistors, the characteristics of the frit and the reaction between glass frit and conductor material play an important role for their electrical properties. In this study, various glass frits in the system of $60RO{\cdot}20SiO_2$ $15B_2O_3{\cdot}5Al_2O_3$(RO=PbO, ZnO, CdO; mole%) were mixed with $RuO_2$ and coated on 96% alumina substrate. Only the glass frit containing PbO was reacted with $RuO_2$in$RuO_{2+}$-thick film resistor and produced the new crystalline phase of $Pb_2Ru_2O_{65}$. Their electrical resistivities strongly depend on the amount of $Pb_2Ru_2O_{65}$ crystalline phase obtained, which varied with firing temperature. The sheet resistivities of these resistors were varied from $10^3\; to\; 10^6\;{\Omega}/{\Box}$ depending on heat treatment, and the absolute value of TCR was decreased as the heat treatment temperature increaed. However, $RuO_2$ did not reacted with the glass frits containing ZnO nor CdO, and the resulting showed very high sheet resistivities.