• Journal of the Korea institute for structural maintenance and inspection
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• v.18 no.6
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• pp.90-96
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• 2014

The electrical resistivity of concrete can be related to two processes involved in corrosion of reinforcement: initiation (chloride penetration) and propagation (corrosion rate). The resisistivity of concrete structure exposed to chloride indicates the risk of early corrosion damage, because a low resistivity is related to rapid chloride penetration and to high corrosion rate. Concrete resistivity is a geometry-independent material property that describes the electrical resistance, which is the ratio between applied voltage and resulting current in a unit cell. In previous study, it was realized that the resistivity of concrete depended on the moisture content in the concrete, microstructural properties, and environmental attack such as carbonation. The current is carried by ions dissolved in the pore liquid. While some data exist on the relationship between moisture content on electrical resistivity of concrete, very little research has been conducted to evaluate the effect of chloride on the conduction of electricity through concrete. The purpose of this study is to examine and quantify the effect of chloride content on surface electrical resistivity measurement of concrete. It was obvious that chloride content had influenced the resistivity of concrete and the relationship showed a linear function. That is, concrete with chloride ions had a comparatively lower resistivity. Decreasing rate of resistivity of concrete was clear at early time, however, after 50 days resistivity was constant irrespective of chloride concentration. Conclusively, this paper suggested the quantitive solution to depict the electrical resistivity of concrete with chloride content.

• Journal of The Korean Association For Science Education
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• v.24 no.3
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• pp.612-620
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• 2004

The purpose of this study was to investigate how middle and high school students represent circuit diagrams with different shapes but electrically same. What prototypes of circuit which students possessed were, how students represented the connection of resistors, and what criteria used while grouping the circuit diagrams were investigated. The participants were 10 middle and 10 high school students. The results show that they represented the circuit diagrams by the geometrical resistor configurations rather than physics principles, not considering the presence of a junction or a battery on the branch. This representation was constrained by the circuit prototypes. Middle and High school students seems to have the own way of representing circuit diagrams without considering physics principles.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.96-98
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• 1999

유기전계발광소자(OELD)의 성능 향상을 위한 많은 연구가 진행되고 있지만 아직까지 금속전극과 유기발 광층 사이의 접촉저항(Contact Resistance)에 관한 연구는 거의 보고되지 않고 있다. Ohmic 접합에서 접촉 저항은 효율적이고 신뢰성 있는 소자제작에 있어서 간과되어서는 안될 매우 중요한 부분이다. 본 연구에서는 금속전극과 유기발광충 사이의 접촉저항에 관해서 논의하고자 한다. 본 연구에서 제작된 샘플은 금속전극으로 Ag, 유기발광재료로서 Alq$_3$를 사용하였으며, Alq3의 두께를 100 $\AA$에서 500 $\AA$까지 각각 다르게 하여 서로 다른 두께의 유기발광층을 가지는 샘플을 제작하였다. 금속전극의 매트릭스 구조에 의해 형성된 적선의 크기는 3 mm x 2 mm이며, 제작된 샘플의 접촉비저항은 TLM(Transmission Line Measurement) 방법을 이용하여 구하였다. Planar한 TLM model로부터 새로운 vertical model을 유추하였으며, 이를 근거로 접촉저항 및 transfer length 등을 계산하였다. 상온에서 측정된 전체 저항값은 유기발광층의 두께가 증가함 에 따라 증가하는 경향을 나타냈으며, 이 때 계산된 접촉비저항은 1.49$\times$$10^1$ $\Omega$-$\textrm{cm}^2$ 이다. 접촉저항은 전극 사이의 거리의 증가에 따라 증가하지만, 측정시간의 thermal budget의 영향으로 상대적으로 전체저항이 감 소하였으나, 저항감소분의 포화에 따라서, 거리에 비례하여 다시 저항이 증가하였다.

• Asia-Pacific Journal of Business Venturing and Entrepreneurship
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• v.12 no.5
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• pp.89-99
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• 2017

Although the technological innovation activities have depended on corporate, organizational and personal capabilities and activities, innovation resistance to practice was not actively considered in previous studies. This study is intended to the effects of corporate technology innovation capabilities and activities on intra-organizational innovation resistance and performance by compensating the limit of previous studies. To achieve this, a survey was empirically carried out to 293 domestic IT and BT companies. First, technological innovation competencies had a positive effect on technological innovation resistance, adopting hypothesis 1. Second, technological innovation activities had no positive effect on technological innovation resistance, rejecting hypothesis 2. Third, technological innovation resistance had a positive effect on technological innovation performance, adopting hypothesis 3. Fourth, technological innovation resistance was positively mediated in the relationship between technological innovation competencies and technological innovation performance, adopting hypothesis 4. Fifth, technological innovation resistance was not positively mediated in the relationship between technological innovation activities and technological innovation performance, rejecting hypothesis 5. Overall, the higher technological innovation competencies had a significant effect on technological innovation resistance. Consequently, technological innovation resistance can improve or reduce technological innovation competencies and performance depending on the level of resistance.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.15.2-15.2
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• 2011

비휘발성 저항 메모리소자인 resistance random access memory (ReRAM)는 간단한 소자구조와 빠른 동작특성을 나타내며 고집적화에 유리하기 때문에 차세대 메모리소자로써 각광받고 있다. 현재, 이성분계 산화물, 페로브스카이트 산화물, 고체 전해질 물질, 유기재료 등을 응용한 저항 메모리소자에 대한 연구가 활발히 진행되고 있다. 그 중 ZnO를 기반으로 하는 amorphous InGaZnO (a-IGZO) 박막은 active layer 로써 박막트랜지스터 적용 시 우수한 전기적 특성을 나타내며, 빠른 동작특성과 높은 저항 변화율을 보이기 때문에 ReRAM 에 응용 가능한 재료로써 기대되고 있다. 또한 가시광선 영역에서 광학적으로 투명한 특성을 보이기 때문에 투명소자로서도 응용이 기대되고 있다. 본 연구에서는 indium tin oxide (ITO) 투명 전극을 적용한 ITO/a-IGZO/ITO 구조의 투명 소자를 제작하여 저항 메모리 특성을 평가하였다. Radio frequency (RF) sputter를 이용하여 IGZO 박막을 합성하고, ITO 전극을 증착하여 투명 저항 메모리소자를 구현하였고, resistive switching 효과를 관찰하였다. 또한, 열처리를 통해 a-IGZO 박막 내의 Oxygen vacancy와 같은 결함의 정도에 따른 on/off 저항의 변화를 관찰할 수 있었다. 제작된 저항 메모리소자는 unipolar resistive switching 특성을 보였으며, 높은 on/off 저항의 차이를 유지하였다. Scanning electron microscope (SEM)을 통해 합성된 박막의 형태를 평가하였고, X-ray diffraction (XRD) 및 transmission electron microscopy (TEM)을 통해 결정성을 평가하였다. 제작된 소자의 전기적 특성은 HP-4145 를 이용하여 측정하고 비교 분석하였다.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.28.1-28.1
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• 2011

비휘발성 저항 메모리소자인 ReRAM은 간단한 소자구조와 빠른 동작특성을 나타내며 고집적화에 유리하기 때문에 차세대 메모리소자로써 각광받고 있다. 현재, 이성분계 산화물, 페로브스카이트 산화물, 고체 전해질 물질, 유기재료 등을 응용한 저항메모리소자 응용에 대한 연구가 활발히 진행되고 있다. 그 중 ZnO 박막은 이성분계 산화물로써 조성비가 간단하고, 빠른 동작특성을 나타내며, 높은 저항 변화율을 보이기 때문에 ReRAM에 응용 가능한 재료로써 기대되고 있다. 또한 가시광선 영역에서 광학적으로 투명한 특성을 보이기 때문에 투명소자 응용에도 많은 연구가 진행되고 있다. 본 연구에서는 Metal/Insulator/Metal (Al/ZnO/Al) 구조의 소자를 제작하여 저항 메모리 특성을 평가하였다. Radio frequency (RF) sputter를 이용하여 ZnO 박막을 합성하고 박막의 결정성을 평가하였으며, resistive switching 효과를 관찰하였다. 합성된 박막 내부의 결정성은 메모리 구동 저항에 영향을 주며, 이를 제어하여 신뢰성있는 메모리 효과를 얻을 수 있었다. 특히 박막의 두께를 제어함으로써 구동전압의 변화를 관찰하였으며 소자에 적합한 두께를 평가할 수 있었다. 또한, ZnO 박막 내의 결함에 따른 on/off 저항의 변화를 관찰할 수 있었다. 제작된 저항 메모리소자는 unipolar 특성을 보였으며, 높은 on/off 저항의 차이를 유지하였다. Scanning electron microscope(SEM)을 통해 합성된 박막의 형태를 평가하였고, X-ray diffraction (XRD) 및 transmission electron microscopy (TEM)을 통해 결정성을 평가하였으며, photoluminescence (PL) spectra 분석을 통하여 박막 내부의 결함 정도를 평가하였다. 제작된 소자의 전기적 특성은 HP-4145를 이용하여 측정하고 비교 분석하였다.

• Applied Chemistry for Engineering
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• v.21 no.4
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• pp.411-416
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• 2010

In this research, we intended to improve the tolerance of thick film resistor using photosensitive polymer resistor paste which was fabricated with alkali-solution developable photosensitive resin and conductive carbon black. At first, we investigated the effect of the selection of carbon black and photosensitive resin on the resistance range and tolerance level of polymer thick film resistor (PTFR). And then, a difference in resistance tolerance was evaluated according to the coating methods of photosensitive resistor paste on test board. In case that the photosensitive resistor paste was coated on whole surface of test board using screen printing, large positional tolerance was obtained because the formation of the thick film with uniform thickness was difficult. On the other hand, when the paste was coated with roller, the resistive thick film with uniform thickness was formed on the whole board area and the result of resistance evaluation showed low tolerance in ${\pm}10%$ range. The tolerance of PTFR could be improved by combination of the precise patterning using photo-process and the coating process for the resistive thick film with uniform thickness.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.28 no.11A
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• pp.883-890
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• 2003

In this paper, Electromagnetic scattering problems by a resistive strip grating with tapered resistivity on a grounded dielectric plane according as strip width and spacing, relative permittivity and thickness of dielectric layers, and incident angles of a electric wave are analyzed by applying the FGMM(Fourier-Galerkin Moment Method) Known as a numerical procedure. The scattered electromagnetic fields are expanded in a series of floguet mode functions. The boundary conditions are applied to obtain the unknown field coefficients and the resistive boundary condition is used for the relationship between the tangential electric field and the electric current density on the strip. The tapered resistivity of resistive strips varies zero resistivity at strip edges. Then the induced surface current density on the resistive strip is expanded in a series of Chebyshev polynomials of the second kind. The numerical results of the geometrically in this paper are compared with those for the existing uniform resistivity and perfectly conducting strip. The numerical results of the normalized reflected power for conductive strips case with zero resistivity in this paper show in good agreement with those of existing paper.

• Geophysics and Geophysical Exploration
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• v.11 no.4
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• pp.350-360
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• 2008

Electrical resistivity is one of physical property of the earth and measured by electrical resistivity survey, electrical resistivity logging and laboratory test. Recently, electrical resistivity is widely used in determination of rock quality in support pattern design of road and railway tunnel construction sites. To get more reliable rock quality data from electrical resistivity, it needs a lot of test and study on correlation of resistivity and rock quality. Firstly, we did rock property test in laboratory, such as P wave velocity, Young's modulus, uniaxial compressive strength (UCS) and electrical resistivity. We correlate each test results and we found out that electrical resistivity has highly related to P wave velocity, Young's modulus and UCS. Next, we accomplished electrical resistivity survey in field site and carried out electrical resistivity logging at in-situ area. We also performed rock classification, such as RQD, RMR and Q-system and we correlate electrical resistivity to RMR data. We found out that electrical resistivity logging data are highly correlate to RMR. Also we found out that electrical resistivity survey data are lower than electrical resistivity logging data when there are faults or fractures. And it cause electrical resistivity survey data to lowly correlate to RMR.

• Journal of Convergence for Information Technology
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• v.11 no.3
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• pp.107-124
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• 2021

This study is a study on the innovation resistance that may arise in connection with the introduction and use of smart factory-related technologies by SMEs. It is to study the effect of the leading factors of innovation resistance on innovation resistance and the effect of innovation resistance on use intention by using the extended innovation resistance model. A total of 176 survey data were used for the study, and the study was conducted using SPSS 25 and Smart PLS 2.0. Relative advantage, suitability, perceived risk, social impact, and organizational characteristics have a significant effect on innovation resistance, and innovation resistance was tested to have a significant effect on the intention to use. As an implication according to the research, a plan to improve the level of introduction and use of smart factories using the expanded innovative storage model was presented by dividing positive and negative factors, and factors that should be improved and factors that should be reduced are presented. It was specifically presented.