• Proceedings of the Korean Society for Food Science of Animal Resources Conference
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• 2004.10a
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• pp.321-325
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• 2004

본 연구는 Ohmic heating system을 이용하여 돈육을 해동하여 해동에 의한 식육의 손상을 최소화하고 신선육과 유사한 해동육을 얻기 위해 최적 해동 속도에 대한 기초 자료를 마련하고자 실시하였다. 각각의 ohmic power intensity(AC, 0, 10, 20, 30, 40 Volt)에 따른 돈육의 해동속도는 기하학적으로 중심부 변화에서 가장 빠른 해동속도는 40V에서 1,582 cm/h로 산출되었고 OV의 0.307cm/h에 비하여 약 5배 정도 빠르게 나타났으며 power intensity가 증가할수록 해동속도가 증가하였다. 이와 같이 ohmic intensity(X: volt)와 해동속도(Y: cm/h)변화를 수학적으로 나타내었는데 다음과 같다; lnY=-0.8971+$1.0345{\cdot}X$ $R^2=0.9968$. 각각의 ohmic power와 비교에서 대조구인 신선육의 보수력이 가장 높았고 해동시료인 처리구간 비교에서 power가 상대적으로 높은 30V, 40V에서 보수력이 가장 좋게 나타났다. Cooking loss에서는 power intensity에 따른 유의적인 변화는 발견되지 않았다. Colo에서는 b-값의 경우 ohmic power intensity가 증가함에 따라 다소 감소하는 경향을 보여 주었다. 해동시 power intensity가 증가할수록 pH는 다소 낮아지는 경향을 보여주었다. 또한 육의 TBA가는 이와 반대로 ohmic thawing은 육의 TBA가를 증가시키는 요인으로 작용하였는데, power intensity에 따른 변화는 유의적인 차이를 보여주지 않았다. 그러나 VBN가에서는 신선육에 비해 해동육의 VBN은 증가하였지만 해동방법에 따른 차아는 발견되지 않았다.

• The Korean Journal of Food And Nutrition
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• v.30 no.4
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• pp.689-695
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• 2017

Ohmic heating is an internal heating method based on the principle that when an electrical current passes through food, electric resistance heat is uniformly generated internally by food resistance. Previous studies indicate that the thermal properties, external structure, internal structure, and swelling power of ohmic heat treated starch of various starches, such as potato, wheat, corn, and sweet potato, differed from those of conventional heating at the same temperature. In this study, the pasting property of starch, treated with ohmic and conventional heating, were measured by RVA (Rapid Visco-Analyzer). Our results show that as the ohmic heating temperature increased, the PV (Paste Viscosity) of the starch decreased significantly, and the PT (Pasting Temperature) increased. Changes in PV and PT indicate that the swelling of starch remains unchanged by ohm heating. The HPV (Hot Paste Viscosity), CPV (Cold Paste Viscosity) and SV (Setback Viscosity) of ohmic heated starch also differed from the conventional heated starch. The pasting property is similar to the viscosity curve of common cross-linked modified starch. In this experiment, we further confirm the similarity with modified starch and its usability.

• The Korean Journal of Food And Nutrition
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• v.25 no.4
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• pp.1068-1074
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• 2012

Ohmic heating uses electric resistance heat which occurs equally and rapidly inside of food when electrical current is flown into. In other study, we researched about soybean protein's characteristic changes by ohmic heating. Nevertheless treated same temperature, denaturation of soybean protein were accelerated by ohmic heating than conventional heating. In this time, we studied thermal property change of potato starch by ohmic heating besides conventional heating. For this purpose, potato starch was heated at same subgelatinization temperature by ohmic and conventional heating. And thermal properties were tested using DSC. Annealing of starch is heat treatment method that heated at 3~4% below the gelatinization point. DSC analysis results of this study, the $T_o$, $T_p$, $T_c$ of potato starch levels were increased, whereas $T_c{\sim}T_o$ was narrowed. This thermal property changes appear similar to annealing's result. It is thought the results shown in this study, because the heating from below the gelatinization point. 6, 12, 24, 72, and 120 hours heating at $55^{\circ}C$ for potato starch, $T_o$, $T_p$, $T_c$ values continue to increased with heating time increase. The gelatinization temperature of raw potato starch was $65.9^{\circ}C$ and the treated starch by conventional heating at $55^{\circ}C$ for 120 hr was $72^{\circ}C$, ohmic was $76^{\circ}C$. The gelatinization range of conventional (72 hr) was $10^{\circ}C$, ohmic was $8^{\circ}C$. In case of 24 hours heating at 45, 50, 55, 60, $65^{\circ}C$ for potato starch, the result was similar to before. $T_o$, $T_p$, $T_c$ values continue to increased and gelatinization range narrowed with heating temperature increase. In case of conventional heating at $60^{\circ}C$, the results of gelatinization temperature and range were $70.1^{\circ}C$ and $9.1^{\circ}C$. And ohmic were $74.4^{\circ}C$ and $7.5^{\circ}C$. When viewed through the results of the above, the internal structure of starch heated by ohmic heating was found that the shift to a more stable form and to increase the homology of the starch internal structure.

• Korean Journal of Food Science and Technology
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• v.26 no.6
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• pp.791-798
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• 1994

Ohmic heating is a food processing operation in which heat is internally generated within foods by the passage of alternating electric current. The process enables highly viscous paste foods such as Kochujang, and fermented soybean paste to be heated very fast. In order to develope the novel pasteurization process of paste foods, static Ohmic heating system was built, and heating characteristic during Ohmic heating under various conditions were studied. Electric conductivities of Kochujang and fermented soybean paste at room temperature were 1.865 S/m and 2.510 S/m, respectively and increased linearly with increasing temperature. Specific heating rate was highly dependent on the frequency. The highest heating rate was achieved at 5 KHz for Kochujang and 20 KHz for fermented soybean paste. Uniform heating throughout the sample was achieved during Ohmic heating with low frequency electrical currents, however above 5 KHz frequency, surface temperature was several degrees higher than the bulk.

• Journal of the Korean Vacuum Society
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• v.12 no.4
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• pp.218-227
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• 2003

Pd/Si/Ti/Pt and Pd/Si/Pd/Ti/Au ohmic contacts to n-type InCaAs were investigated for applications to AlGaAs/GaAs HBT emitter ohmic contacts. In the Pd/Si/Ti/Pt ohmic contact, as-deposited contact showed non-ohmic behavior, and high specific contact resistivity of $5\times10^{-3}\Omega\textrm{cm}^2$ was achieved by rapid thermal annealing at $375^{\circ}C$/10 sec. However, the specific contact resistivity decreased remarkably to $2\times10^{-6}\Omega\textrm{cm}^2$ by annealing at $425^{\circ}C$/10sec. In the Pd/Si/Pd/Ti/Au ohmic contact, minimum specific contact resistivity of $3.9\times10^{-7}\Omega\textrm{cm}^2$ was achieved by annealing at $400^{\circ}C$/20sec. In both ohmic contacts, low contact resistivity and non-spiking planar interface between ohmic materials and InGaAs were maintained. Therefore, these thermally stable ohmic contact systems are promising candidates for compound semiconductor devices. RF performance of the AlGaAs/GaAs HBT was also examined by employing the Pd/Si/Ti/Pt and Pd/Si/Pd/Ti/Au systems as emitter ohmic contacts. Cutoff frequencies were 63.9 ㎓ and 74.4 ㎓, respectively, and maximum oscillation frequencies were 50.1 ㎓ and 52.5 ㎓, respectively. It shows very successful high frequency operations.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.290-293
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• 2003

Ohmic contact characteristics of Al ion implanted n-type SiC wafer were investigated. Al ions implanted with high dose to obtain the final concentration of $5{\times}10^{19}/cm^3$, then annealed at high temperature. Firstly, B ion ion implanted p-well region were formed which is needed for fabrication of SiC devices such as DIMOSFET and un diode. Secondly, Al implanted high dose region for ohmic contact were formed. After ion implantation, the samples were annealed at high temperature up to $1600^{\circ}C\;and\;1700^{\circ}C$ for 30 min in order to activate the implanted ions electrically. Both the inear TLM and circular TLM method were used for characterization. Ni/Ti metal layer was used for contact metal which is widely used in fabrication of ohmic contacts for n-type SiC. The metal layer was deposited by using RF sputtering and rapid thermal annealed at $950^{\circ}C$ for 90sec. Good ohmic contact characteristics could be obtained regardless of measuring methods. The measured specific contact resistivity for the samples annealed at $1600^{\circ}C\;and\;1700^{\circ}C$ were $1.8{\times}10^{-3}{\Omega}cm^2$, $5.6{\times}10^{-5}{\Omega}cm^2$, respectively. Using the same metal and same process of the ohmic contacts in n-type SiC, it is found possible to make a good ohmic contacts to p-type SiC. It is very helpful for fabricating a integrated SiC devices. In addition, we obtained that the ratio of the electrically activated ions to the implanted Al ions were 10% and 60% for the samples annealed at $1600^{\circ}C\;and\;1700^{\circ}C$, respectively.

• Korean Journal of Food Science and Technology
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• v.47 no.4
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• pp.474-479
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• 2015

In this study, five different Gochujang (a traditional Korean sauce prepared using fermented red pepper paste) sauces were heated at $100^{\circ}C$ for 5 min using a continuous ohmic heating system. Ohmic heating yielded greater reduction in microbial counts (90-95% reduction) than did conventional heating (65-75% reduction). The sterilization effect of the continuous ohmic heater increased with increasing sample flow rate and decreasing Reynolds number inside the pipe. Low-viscosity samples had higher electrical conductivity and were better suited for ohmic heating than were high-viscosity samples. The color and texture were also satisfactorily maintained after ohmic heating. Compared with conventional heating, ohmic heating provided rapid and uniform heating, which is more suitable for aseptic thermal processing of viscous foods.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.10
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• pp.1545-1553
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• 1989

The ohmic contact behavior in HEMT structure was compared with that in MESFET one throughout the specific contact resistance and microstructural change in both structures. A Au-Ge-Ni based metallization scheme was used and the alloying temperature of the ohmic materials was changed from 330\ulcorner to 550\ulcorner. The alloying temperature to obtain the minimum specific contact resistance in HEMT structure was 60k higher than that in MESFET. The volume fraction of NiAs (Ge) in MESFET structure increases with alloying temperature and/or the alloying time, which makes the decrease of specific contact resistance at the initial stage of ohmic metallization. In contrast, the volume fraction of NiAs(Ge) in HEMT structure was not dependent upon the specific contact resistance, which implies that the ohmic contacts are dominantly formed by the Ge diffusion to 2-DEG(two dimensional electron gas) layer.

• Proceedings of the Korean Society for Food Science of Animal Resources Conference
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• 2004.10a
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• pp.407-411
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• 2004

Ohmic heating occurs when an electric current is passes through food, resulting in a temperature rise in the product due to the conversion of the electric energy into heat. The time spent in the thawing is critical for product sterility and quality. The objective of this study is to conduct numerical modelling between the effect of ohmic thawing intensity on PTT(phase transition time) at constant concentration and the effect of matrix concentrations on PTT at constant voltage condition. the stronger ohmic thawing intensity resulted in decreasing the PTT. High ohmic intensity causes short PTT. And the higher gelatin concentration, the faster increment of PTT. A numerical modeling was executed to predict the PTT influenced by the power intensity using exponential regression and the PTT influenced by gelatin concentration using logarithmic regression. Therefore, from this numerical model of gelatin matrix, it is possible to estimate exact values extensively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.133-136
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• 2004

In this study, the characteristics of 3C-SiC ohmic contact were investigated. Titanium-tungsten(TiW) films were used for contact metalization. The ohmic contact resistivity between 3C-SiC and TiW was measured by HP4155 and then calculated with the circular transmission line method(C-TLM). And also the physical properties of TiW and the interface between TiW and 3C-SiC were analyzed using XRD and AES. TiW films make a good role of a diffusion barrier and their contact properties with 3C-SiC are stable at high temperature.