• Journal of Sensor Science and Technology
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• v.29 no.2
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• pp.123-127
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• 2020

In this paper, the estimation of the disparity for depth extraction in monochrome complementary metal-oxide-semiconductor (CMOS) image sensors with offset pixel apertures is presented. To obtain the depth information, the disparity information between two different channel data of the offset pixel apertures is required. The disparity is caused by the difference in the response angle between the left- and right-offset pixel aperture images. A depth map is implemented by the generated disparity. Therefore, the disparity is the most important factor for realizing 3D images from the designed CMOS image sensor with offset pixel apertures. The disparity is influenced by the pixel height and offset value of the offset pixel aperture. To confirm this correlation, the offset value is set to maximum within the pixel area, and the disparity values corresponding to the difference in the heights are calculated and compared. The disparity is derived using the camera-lens formula. Two monochrome CMOS image sensors with offset pixel apertures are used in the disparity estimation.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1582-1584
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• 1996

The polycrystalline silicon thin film transistors (poly-Si TFT) are the most promising candidate for active matrix liquid crystal displays (AMLCD) for their high mobilities and current driving capabilities. The leakage current of the poly-Si TFT is much higher than that of the amorphous-Si TFT, thus larger storage capacitance is required which reduces the aperture ratio fur the pixel. The offset gated poly-Si TFTs have been widely investigated in order to reduce the leakage current. The conventional method for fabricating an offset device may require additional mask and photolithography process step, which is inapplicable for self-aligned source/drain ion implantation and rather cost inefficient. Due to mis-alignment, offset devices show asymmetric transfer characteristics as the source and drain are switched. We have proposed and fabricated a new offset poly-Si TFT by applying photoresist reflow process. The new method does not require an additional mask step and self-aligned ion implantation is applied, thus precise offset length can be defined and source/drain symmetric transfer characteristics are achieved.

• Proceedings of the KSRS Conference
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• 2007.10a
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• pp.629-632
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• 2007

While conventional interferometric SAR (InSAR) technique is an excellent tool for displacement observation, it is only sensitive to one-dimensional deformation along the satellite's line-of-sight (LOS). Recently, a multiple aperture interferogram (MAI) technique has been developed to overcome this drawback. This method successfully extracted along-track displacements from InSAR data, based on split-beam InSAR processing, to create forward- and backward- looking interferograms, and was superior to along-track displacements derived by pixel-offset algorithm. This method is useful to measure along-track displacements. However, it does not only decrease the coherence of MAI because three co-registration and resampling procedures are required for producing MAI, but also is confined to a suitable interferometric pair of SAR images having zero Doppler centroid. In this paper, we propose an efficient and robust method to generate MAI from interferometric pair having non-zero Doppler centroid. The proposed method efficiently improves the coherence of MAI, because the co-registration of forward- and backward- single look complex (SLC) images is carried out by time shift property of Fourier transform without resampling procedure. It also successfully removes azimuth flat earth and topographic phases caused by the effect of non-zero Doppler centroid. We tested the proposed method using ERS images of the Mw 7.1 1999 California, Hector Mine Earthquake. The result shows that the proposed method improved the coherence of MAI and generalized MAI processing algorithm.