• Proceedings of the KIPE Conference
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• 2016.07a
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• pp.367-368
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• 2016

10kV IGCT has been recently developed and has the potential to push wind turbine systems to higher power and voltage rating. Converters employing IGCTs need snubber and OVP circuit to limit the rate of current's rising and peak over voltage across IGCT during turn on and off state, respectively. The conventional RCD snubber which is used in such power converter dissipates a significant amount of power. In order to reduce the amount of energy lost by conventional RCD snubber, this paper proposes flyback type snubber comprising two coils wound on a magnetic core. The flyback snubber not only meets all of the IGCTs characteristics during on and off-state but also significantly saves the power loss. Modern magnetic model using permeance-capacitance analogy leads to more accurate loss analysis of flyback type di/dt snubber circuit in 3-level NPC type back-to-back VSC. In turns, the comparison between conventional and flyback type snubber yield the effectiveness of proposed snubber in wind turbine systems.

• Progress in Superconductivity
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• v.11 no.1
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• pp.78-82
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• 2009

We have fabricated a helmet type magnetoencephalogrphy(MEG) with a $1^{st}$ order gradiometer in vacuum to improve the signal-to-noise ratio(SNR) and the boil-off rate of liquid helium(LHe). The axial type first-order gradiometer was fabricated with a double relaxation oscillation SQUID(DROS) sensor which was directly connected with a pickup coil. The neck space of LHe dewar was made to be smaller than that of a conventional dewar, but the LHe boil-off ratio appeared to increase. To reduce the temperature of low Tc SQUID sensor and pickup coil to 9 K, a metal shield made of, such as copper, brass or aluminum, have been usually used for thermal transmission. But the metal shield exhibited high thermal noise and eddy current fluctuation. We quantified the thermal noise and the eddy current fluctuation of metal. In this experiment, we used the bobbin which was made of an alumina to wind Nb superconductive wire for pickup coil and the average noise of coil-in-vacuum type MEG system was $3.5fT/Hz^{1/2}$. Finally, we measured the auditory evoked signal to prove the reliability of coil-in-vacuum type MEG system.

• The Journal of Industrial Distribution & Business
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• v.7 no.2
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• pp.25-32
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• 2016

Purpose - The objective of this study is to investigate the differences and interaction effects on the perceived financial risk between Korean and Thai consumers according to the types of product(utilitarian and hedonic) and price discount (bundle and 50%off). Research design, Data and Methodology - This paper sets up 6 research subjects. Data collection was carried out in Korea and Thailand. Data was made of 154 Korean and 147 Thai consumers. As for the independent variables for this study, consumer types are composed of Korean and Thai consumers, price discount types were bundle(1+1) and 50% off price, and product types consist of utilitarian and hedonic product. The dependent variable is perceived as a financial risk. Each question is measured as a Likert-type five-point scale. Results - According to the price discount and product type, perceived financial risk of Thai consumers is confirmed to be a larger one than that of Korean consumers. Also, there are interaction effects in the perceived financial risk. Conclusion - Our findings can be used as useful information for global retail markets as marketing strategies in future Korean enterprise through a comparative study on Korean and Thai consumers.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.333-333
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• 2016

현재까지 가장 높은 광전류 변환 효율을 나타내는 III-V 화합물 반도체의 다중접합 태양전지 대신 이보다 단순한 에피구조를 가진 단일셀 이종접합구조의 태양전지를 제안하였다. 이를 한국나노 기술원에서 MOCVD(Metalorganic Vapour Phase Epitaxy) 장비를 이용하여 에피구조를 성장하고 태양 전지를 제작해 그 특성을 조사하였다. 태양 전지는 서로 다른 orientation의 두 GaAs 기판에 각각 동일한 에피 구조로 성장되었다. GaAs 기판은 Si 도핑된 n-type 기판으로 (100) 표면이 <111>A 방향으로 2도 off 된 웨이퍼와 10도 off 된 웨이퍼가 사용되었다. 연구에서 시뮬레이션에 사용된 태양전지의 에피 구조는 맨 위 p-GaAs (p-contact 층), p-InAlP, p-InGaP의 광흡수층과 N-InAlGaP 층과 아래의 n-InAlP와 n-GaAs의 n-contact층으로 이루어져있다.태양전지는 $5mm{\times}5mm$의 면적을 가지고 있다. 그림 1은 전류-전압의 측정된 결과를 나타낸 그래프이다. 태양전지는 1 sun 조건하에서 probe를 이용해 측정되었다. 2도 off GaAs 기판 위에 성장시킨 태양전지에서는 3.7mA의 단락전류값이, 10도$^{\circ}$ off 인 샘플에서는 4.7mA의 단락전류값이 측정되었다. 반면에 전류-전압곡선으로부터 얻은 10도 off 인 태양전지의 직렬 저항값은 2도 off 인 태양전지의 약4배 정도로 나타났다. 이는 기판의 결정방향에 따라 태양전지의 내부 전하 transport에 차이가 있음을 나타낸다. TLM (Transmission Line Model) 방법에 의한 p-contact의 ohmic저항 측정에서도 이와 일치하는 결과를 얻었다.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.24 no.9
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• pp.1264-1276
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• 2000

Light-off catalyst has been used for minimization of cold-start emissions. Improved cold-start performance of light-off catalyst needs the optimal design in terms of flow distribution, geometric surface area, precious metal loading, cell density and space velocity. In this study, these influential factors are numerically investigated using integrated numerical technique by considering not only 3-D fluid flow but also heat and mass transfer with chemical reactions. The present results indicate that uneven catalyst loading of depositing high active catalyst at upstream of monolith is beneficial during warm-up period but its effect is severely deteriorated when the space velocity is above 100,000 $hr^{-1}$ To maximize light-off performance, this study suggests that 1) a light-off catalyst be designed double substrate type; 2) the substrate with high GSA and high PM loading at face be placed at the front monolith; and 3) the cell density of the rear monolith be lower to reduce the pressure drop.

• Journal of The Korean Astronomical Society
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• v.43 no.5
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• pp.169-181
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• 2010

We develop a proto-model of an off-axis reflective telescope for infrared wide-field observations based on the design of Schwarzschild-Chang type telescope. With only two mirrors, this design achieves an entrance pupil diameter of 50 mm and an effective focal length of 100 mm. We can apply this design to a mid-infrared telescope with a field of view of $8^{\circ}{\times}8^{\circ}$. In spite of the substantial advantages of off-axis telescopes in the infrared compared to refractive or on-axis reflective telescopes, it is known to be difficult to align the mirrors in off-axis systems because of their asymmetric structures. Off-axis mirrors of our telescope are manufactured at the Korea Basic Science Institute (KBSI). We analyze the fabricated mirror surfaces by fitting polynomial functions to the measured data. We accomplish alignment of this two-mirror off-axis system using a ray tracing method. A simple imaging test is performed to compare a pinhole image with a simulated prediction.

• Earthquakes and Structures
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• v.8 no.3
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• pp.699-712
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• 2015

Bracing structures with off-centre bracing system is one of the new resistant systems that frequently used in the frame with pin connections. High ductility, high-energy dissipation and decrease of base shear are advantages of this bracing system. However, beside these advantages, reconstruction and hard repair of off-centre bracing system cause inappropriate performance in the earthquake. Therefore, in this paper, the goal is investigating the behavior of this type of bracing system with ductile element (circular dissipater), in order to providing replacement of damaged member without needing repair or reconstruction of the general system. To achieve this purpose, some numerical studies have been performed using ANSYS software, a frame with off-centre bracing system and optimum eccentricity (OBS-C-O) and another frame with the same identifications without ductile element (OBS) has been created. In order to investigate precisely on the optimum placement of circular elements under monotonic load again three steal frames were modeled. Furthermore, the behavior of this general system investigated for the first time, linear and nonlinear behavior of these two steel frames compared to each other, to achieve the benefit of using the circular element in an off-centre bracing system. Eventually, the analytical results revealed that the performance of steel ring at the end of off-centre braces system illustrating as a first defensive line and buckling fuse in the off-centre bracing system.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.213-216
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• 2003

Recently a new high power device GCT (Gate Commutated Turn-off) thyristor has been successfully introduced to high power converting application areas. GCT thyristor has a quite different turn-off mechanism to the GTO thyristor. All main current during turn-off operation is commutated to the gate. Therefore, IGCT thyristor has many superior characteristics compared with GTO thyristor; especially, snubberless tum-off capacibility and higher turn-on capacibility. The basic structure of the GeT thyristor is same as that of the GTO thyristor. This makes the blocking voltage higher and controllable on-state current higher. The turn-off characteristic of the GCT thyristor is influenced by the minority carrier lifetime and the performance of the gate drive unit. In this paper, we present turn-off characteristics of the 2.5kV PT(Punch-Through) type GCT as a function of the minority carrier lifetime and variation of the doping profile shape of p-base region.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1947-1949
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• 1999

Carrier lifetime in silicon power devices caused switching delay and excessive power loss at high frequency switching. We studied transient turn-on/turn-off transient characteristics of electron irradiated and proton irradiated silicon pn junction diodes. Both the electron and proton irradiation of power devices have already become a widely used practice to reduce minority carrier lifetime locally[1]. The sample is n+p junction diode, made by ion implantation on a $20\Omega.cm$ p-type wafer. We investigated turn-on/turn-off transient & breakdown voltage characteristics by digital oscilloscope. Our data show that proton irradiated samples show better performance than electron irradiated samples.

• Proceedings of the KIPE Conference
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• 2001.10a
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• pp.36-38
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• 2001

A basic structure of 2500V-4500V reverse-conducting GCT (RC-GCT) is given in this paper. The punch-through type (PT) is adopted for narrow N-base with high resistivity so that the fast turn-off and low on-state voltage can be achieved. The photo mask design was made upon the both turn-off performance and solution of separation between GCT and integrated freewheeling diode (FWD) part. The turn-on and turn-off characteristics for reserve-conducting gate commutated thyristors (RC-GCTs) were investigated by ISE simulation. Additionally, the local carrier lifetime control by proton irradiation was adopted so as not only to obtain the reduction of turn-off losses of GCT but also to reach a soft reverse recovering characteristics of FWD