• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 센서 박막재료 반도체 세라믹
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• pp.213-216
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• 2003

Recently a new high power device GCT (Gate Commutated Turn-off) thyristor has been successfully introduced to high power converting application areas. GCT thyristor has a quite different turn-off mechanism to the GTO thyristor. All main current during turn-off operation is commutated to the gate. Therefore, IGCT thyristor has many superior characteristics compared with GTO thyristor; especially, snubberless tum-off capacibility and higher turn-on capacibility. The basic structure of the GeT thyristor is same as that of the GTO thyristor. This makes the blocking voltage higher and controllable on-state current higher. The turn-off characteristic of the GCT thyristor is influenced by the minority carrier lifetime and the performance of the gate drive unit. In this paper, we present turn-off characteristics of the 2.5kV PT(Punch-Through) type GCT as a function of the minority carrier lifetime and variation of the doping profile shape of p-base region.

• 대한전자공학회논문지SD
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• 제46권4호
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• pp.21-27
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• 2009

본 연구에서는 고온에서 Schottky barrier SOI nMOS 및 pMOS의 전류-전압 특성을 분석하기 위해서 Er 실리사이드를 갖는 SB-SOI nMOSFET와 Pt 실리사이드를 갖는 SB-SOI pMOSFET를 제작하였다. 게이트 전압에 따른 SB-SOI nMOS 및 pMOS의 주된 전류 전도 메카니즘을 온도에 따른 드레인 전류 측정 결과를 이용하여 설명하였다. 낮은 게이트 전압에서는 온도에 따라 열전자 방출 및 터널링 전류가 증가하므로 드레인 전류가 증가하고 높은 게이트 전압에서는 드리프트 전류가 감소하여 드레인 전류가 감소하였다. 고온에서 ON 전류가 증가하지만 드레인으로부터 채널영역으로의 터널링 전류 증가로 OFF 전류가 더 많이 증가하게 되므로 ON/OFF 전류비는 감소함을 알 수 있었다. 그리고 SOI 소자나 bulk MOSFET 소자에 비해 SB-SOI nMOS 및 pMOS의 온도에 따른 문턱전압 변화는 작았고 subthreshold swing은 증가하였다.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2001년도 Proceedings ICPE 01 2001 International Conference on Power Electronics
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• pp.414-417
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• 2001

SRG (Switched Reluctance Generator) have many advantages such as high efficiency, low cost, high-speed capability and robustness compared with characteristics of other machines. However, the control methods that have been adopted for SRGs are complicated. This paper proposes a simple control method using PID controller that only controls turn-off angles while keeping turn-on angles of SRG constant. The linear characteristics between the generated current and the turn-off angle can be used to control the turn-off angle for load variations. Since the reference current for generation can be produced from an error between the reference and the real voltage, it can be controlled to keep the output voltage constant. The proposed control method enhances the robustness of this system and simplifies the hardware and software by using only the voltage and speed sensors. The proposed method is verified by experimental results.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 하계학술대회 논문집 B
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• pp.605-607
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• 2001

In this paper, an off-tine UPS with CVT(constant voltage transformer) is designed and the experimental result and problems of the designed UPS is given and discussed. This off-line UPS consists of triple-port CVT and PWM inverter which acts as charger and inverter. It can be evaluated in low price because haying simple structure. It offers high performance because CVT restricts the short current automatically about two or three times of rated current, has nearly unit power factor and constant output voltage to varying input voltage. The weak points of this UPS are that the output voltage waveform is not perfect sinusoidal and has phase difference to input voltage. The experimental result and problems of the designed UPS is given.

• Journal of Korean Society for Atmospheric Environment
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• 제9권E호
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• pp.382-389
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• 1993

An evaluation of a plasma reactor was conducted to investigate its potential as a feasible and economical off-gas control technology for an air stripping tower (AST). The plasma reactor was powered by an alternating current with frequencies up to 1000Hz. The study showed that over 90% conversion of gas-phase trichloroethylene (TCE) can be achieved. An optimum frequency for the laternating current existed for maximum power input. The optimum frequency was dependent on the reactor geometry and the primary voltage applied. for a fixed geometry, a plasma reactor has a limited capacity for flow rate. Even though it is a feasible process to control off-gases, further investigations should be conducted to develop a more economic process.

• 반도체디스플레이기술학회지
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• 제13권1호
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• pp.63-66
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• 2014

ZnO is a wide bandgap (3.3 eV) semiconductor with high mobility and good optical transparency. However, off-current characteristics of ZnO thin-film transistor (TFT) need improvements. In this work we studied the variation in ZnO TFT current under different annealing conditions. Annealing usually modifies gas adsorption at grain boundaries of ZnO. When oxygen is adsorbed, electron density decreases due to strong electronegativity of the oxygen, and TFT current decreases as a result. Our experiments showed that current increased after vacuum annealing and decreased after air annealing. We explain that the change of off-current is caused by the desorption and adsorption of oxygen at the grain boundaries.

• 대한전기학회논문지:전기기기및에너지변환시스템부문B
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• 제54권9호
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• pp.431-436
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• 2005

This paper studies a novel boost DC-DC converter operated high efficiency for discontinuous current mode (DCM) control. The converter worked in DCM eliminates the complicated circuit control requirement, reduces a number of components, and reduces the used reactive components size. In the general DCM converter, the switching devices are turned-on the zero current switching (ZCS), and the switching devices must be switched-off at a maximum reactor current. To achieve the zero voltage switching (ZVS) at the switching turn-off, the proposed converter is constructed by using a new loss-less snubber circuit. Soft-switched operation of the proposed boost converter is verified by digital simulation and experimental results. A new boost converter achieves the soft-switching for all switching devices without increasing their voltage and current stresses. The result is that the switching loss is very low and the efficiency of boost DC-DC converter is high.

• Journal of Electrical Engineering and Technology
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• 제9권5호
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• pp.1654-1659
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• 2014

Tunneling field-effect transistors (TFETs) are very applicable to low standby-power application by their virtues of low off-current ($I_{off}$) and small subthreshold swing (S). However, low on-current ($I_{on}$) of silicon-based TFETs has been pointed out as a drawback. To improve $I_{on}$ of TFET, a gate-all-around (GAA) TFET based on III-V compound semiconductor with InAs/InGaAs/InP multiple-heterojunction structure is proposed and investigated. Its performances have been evaluated with the gallium (Ga) composition (x) for $In_{1-x}Ga_xAs$ in the channel region. According to the simulation results for $I_{on}$, $I_{off}$, S, and on/off current ratio ($I_{on}/I_{off}$), the device adopting $In_{0.53}Ga_{0.47}As$ channel showed the optimum direct-current (DC) performance, as a result of controlling the Ga fraction. By introducing an n-type InGaAs thin layer near the source end, improved DC characteristics and radio-frequency (RF) performances were obtained due to boosted band-to-band (BTB) tunneling efficiency.

• 공업화학
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• 제30권4호
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• pp.504-508
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• 2019

GaInP/AlGaInP 이종접합 구조를 제안하고 집광 조건에서 가장 높은 효율을 달성한 III-V 화합물 반도체 다중접합 태양전지의 맨 위 subcell에 주로 사용되는 GaInP 동종접합 구조를 대체해 이종접합 구조가 응용될 가능성에 대하여 조사하였다. $2^{\circ}$ off 된 웨이퍼와 $10^{\circ}$ off 된 서로 다른 off-cut 방향을 갖는 두 종류의 GaAs 기판 위에 성장된 태양전지의 특성을 집광 조건에서 측정하고 비교하였다. $10^{\circ}$ off 된 태양전지에서 더 높은 단락전류와 변환효율을 얻었다. 1 sun 조건에서 $10^{\circ}$ off 된 기판 위에 제작된 $2{\times}2mm^2$ 면적의 태양전지에서 $9.21mA/cm^2$의 단락전류밀도와 1.38 V의 개방 전압이 측정되었다. $10^{\circ}$ off 기판 위에 제작된 $5{\times}5mm^2$ 태양전지에서 집광도 증가에 따라 곡선인자(fiill factor)가 감소하여 변환효율은 6.03% (1 sun)에서 5.28% (20 sun)로 측정되었다.

• 전력전자학회논문지
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• 제12권1호
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• pp.98-106
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• 2007

본 논문에서는 개선된 온라인 턴 오프각 제어방식을 이용하여 스위치드 릴럭턴스 전동기의 성능최적화를 위한 온라인 전류제어방식을 제안한다. 성능최적화를 위한 제어방식은 에너지효율의 최대화와 토크리플 저감이라는 두가지 측면에서 접근하며, 두 가지 조건을 모두 만족할 수 있는 최적의 턴 오프 위치각은 제안된 알고리즘의 연산방식을 통해 획득된 턴 오프각 제어기를 통해 구현됨으로서 SRM의 성능최적화를 이룬다. 제안된 제어기는 토크와 전류 특성, 자속변동의 정보와 같은 복잡한 데이터베이스나 SRM이 가지는 고유의 자화곡선을 요구하지 않는다는 장점을 가지며 제안된 연산 제어기를 시뮬레이션과 실험을 통해 실제 적용가능성과 그 타당성을 입증한다.