• 동력기계공학회지
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• 제10권3호
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• pp.51-57
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• 2006

The effect of grain size on corrosion resistance and high temperature oxidation behavior was studied in 22Cr-15Ni-5W super austenitic stainless steels for desulfurization equipment as a heat power station. In the high temperature oxidation test, oxidation rate was increased as the temperature increased from $600^{\circ}C\;to\;800^{\circ}C$. In vapor, oxidation rate was faster than that in air. Because the vapor was inhibited nucleation of $Cr_2O_3$ film. And the high temperature oxidation resistance at $600^{\circ}C{\sim}800^{\circ}C$ was excellent from all specimens and specimen of the smallest grain size was the most excellent. Because increasing of diffusion course through the grain-boundary was promoted nucleation and growth of $Cr_2O_3$ film. In the test temperature at $600^{\circ}C{\sim}800^{\circ}C$, Cr rich round particle oxide was formed in air, whereas Fe rich needle type oxide was developed in vapor.

• 한국세라믹학회지
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• 제26권4호
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• pp.479-486
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• 1989

According to the phase diagram, 6Bi2O3.GeO2 composition melts congruently at 93$0^{\circ}C$ and forms a stable ${\gamma}$-6Bi2O3.GeO2 crystal phase below the melting point. But when the melt of this composition was cooled at a rate 1-15$0^{\circ}C$/min without tapping by a glass rod or impurity addition, a metastable $\delta$-6Bi2O3.GeO2 crystal phase was formed. It is due to that as the nucleation energy barrier of $\delta$-6Bi2O3.GeO2 crystals, which have more open and defective structure, is lower than that of ${\gamma}$-6Bi2O3.GeO2 crystals. When impurities or ${\gamma}$-6Bi2O3.GeO2 crystals existed in the melt, stable ${\gamma}$-6Bi2O3.GeO2 crystal phase was formed at various cooling rate. It is because of that the impurities or the ${\gamma}$-6Bi2O3.GeO2 crystals role as a seed crystal and as a result the nucleation energy barrier of ${\gamma}$-6Bi2O3.GeO2 crystals is lowered.

• 한국세라믹학회지
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• 제26권2호
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• pp.195-200
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• 1989

The Silica-Carbon mixture was made with addition of carbon black in the composition which monodispersed spherical fine silica was formed by the hydrolysis of ethylsilicate, mole ratio of Carbon/Alkoxide was 3.1 and $\beta$-SiC powder was synthesized by reacting this mixture at 1,350~1,50$0^{\circ}C$ in Ar atmosphere. The results of this study are as follow : (1) The purity of synthesized $\beta$-SiC powder was above 99.98% and it was in cubic modification with lattice constant of 4.3476$\AA$. (2) The rate-controlling steps varied with the reaction temperature for the syntehsis of $\beta$-SiC in this study ; nucleation and growth of $\beta$-SiC at 1,350~1,40$0^{\circ}C$, interfacial reaction at 1,45$0^{\circ}C$ and diffusion described by Jander Equation at 1,50$0^{\circ}C$. (3) When the rate-determining step was nucleation and growth, the activation energy was about 87.8kcal/mol.

• 한국결정성장학회지
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• 제6권1호
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• pp.11-18
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• 1996

Czochralski법으로 성장된 대구경(8인치 이상) 규소 단결정속에 폰재하는 결정 결 함을 규명하였다. Ring형 산화 적충 결함(Oxidation Induced Stacking Faults, 일명 OISF)의 발생 형태를 조사하였다. Minority life time을 mappmg하여 본 결과, rmg형 OISF의 폰재는 재료의 전기적 성질에 영향을 미칠 가능성이 높은 것으로 확인되었다. OISF의 핵 생성에 미치는 냉각 속도의 영향을 조사한 결과 homogeneous적 핵 생성 및 성장 현상을 확인할 수 있었다. 또한 COP(Crystal Originated Particle)의 주원인인 FPD(Flow Pattern Defects)의 발생은 용 체의 응고 속도에 크게 화우됨을 발견하였다. 이들 결함의 상반된 발생 현상의 제어를 위하여 는 인상 속도는 느리게, 또한 $950^{\circ}C$ 근처에서의 냉각속도는 빠르게 하는 것이 바람직한 것으로 결함 발생 제어 모델이 제시되었다.

• 한국주조공학회지
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• 제41권3호
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• pp.235-240
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• 2021

진공 가스분사법으로 제조된 Fe₇₅B₁₃P₅Nb₂Hf₁C₄ 합금의 응고중 액상의 크기와 이에 따른 냉각속도의 변화가 정출상의 형성에 미치는 영향에 대한 고찰을 하였다. 고온 액상에서 동일한 조건으로 응고된 서로 다른 크기의 액상이 구형의 분말형태로 응고될 때 크기에 따른 임계냉각속도의 차이를 계산하였으며, 액상의 평균 반지름이 3배정도 크기 차이가 날 경우 고상으로 변태할 때 임계냉각속도가 13.5배까지 차이가 나는 것을 알 수 있었다. 이러한 임계냉각 속도의 차이에 따른 정출상의 형성과 정출상의 형태와 크기에 따른 탄화물의 형성 거동을 조사하여 열역학 계산으로 예측된 결과와 비교 분석하였으며, 분말입자의 크기가 20~45 마이크론일 경우 Hf과 Nb이 포함된 MC타입의 탄화물이 초정으로 형성 되는 것을 알 수 있었으며 이때 Hf과 Nb의 비율은 합금의 조성 및 냉각속도에 따라 변화됨을 관찰 할 수 있었다.

• 한국표면공학회지
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• 제46권1호
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• pp.29-35
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• 2013

The effect of DC bias on the growth of nanocrystalline diamond films on silicon substrate by microwave plasma chemical vapor deposition has been studied varying the substrate temperature (400, 500, 600, and $700^{\circ}C$), deposition time (0.5, 1, and 2h), and bias voltage (-50, -100, -150, and -200 V) at the microwave power of 1.2 kW, working pressure of 110 torr, and gas ratio of Ar/1%$CH_4$. In the case of low negative bias voltages (-50 and -100 V), the diamond particles were observed to grow to thin film slower than the case without bias. Applying the moderate DC bias is believed to induce the bombardment of energetic carbon and argon ions on the substrate to result in etching the surfaces of growing diamond particles or film. In the case of higher negative voltages (-150 and -200 V), the growth rate of diamond film increased with the increasing DC bias. Applying the higher DC bias increased the number of nucleation sites, and, subsequently, enhanced the film growth rate. Under the -150 V bias, the height (h) of diamond films exhibited an $h=k{\sqrt{t}}$ relationship with deposition time (t), where the growth rate constant (k) showed an Arrhenius relationship with the activation energy of 7.19 kcal/mol. The rate determining step is believed to be the surface diffusion of activated carbon species, but the more subtle theoretical treatment is required for the more precise interpretation.

• 한국표면공학회지
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• 제50권5호
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• pp.352-359
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• 2017

The growth of nanocrystalline diamond films on a p-type poly silicon substrate was studied using microwave plasma chemical vapor deposition method. A 6 mm thick poly silicon plate was mirror polished and scratched in an ultrasonic bath containing slurries made of 30 cc ethanol and 1 gram of diamond powders having different sizes between 5 and 200 nm. Upon diamond deposition, the specimen scratched in a slurry with the smallest size of diamond powder exhibited the highest diamond particle density and, in turn, fastest diamond film growth rate. Diamond deposition was carried out applying different DC bias voltages (0, -50, -100, -150, -200 V) to the substrate. In the early stage of diamond deposition up to 2 h, the effect of voltage bias was not prominent probably because the diamond nucleation was retarded by ion bombardment onto the substrate. After 4 h of deposition, the film growth rate increased with the modest bias of -100 V and -150 V. With a bigger bias condition(-200 V), the growth rate decreased possibly due to the excessive ion bombardment on the substrate. The film grown under -150V bias exhibited the lowest contact angle and the highest surface roughness, which implied the most hydrophilic surface among the prepared samples. The film growth rate increased with the apparent activation energy of 21.04 kJ/mol as the deposition temperature increased in the range of $300{\sim}600^{\circ}C$.

• 한국재료학회지
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• 제4권5호
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• pp.566-573
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• 1994

연소화염법을 이용한 다이아몬드 박막합성시 기판표면온도 및 온도분포에 가장 크게 작용하는 공정변수는 탄화수소량을 결정하는 산소/아세틸렌 가스의 혼합비(R=O/sub 2/C/sub 2/H/sub 2/)이다. 본 연구에서는 혼합가스비율 변화 (R=0.87-0.98)에 따른 기판표면온도 및 온도분포를 측정하고, 이들 변수에 따른 다이아몬드 박막의 생성 및 결정형상의 변화과정을 SEM관찰, Raman 분광분석 및 X-선 회절 분석을 통해 조사하였다. 혼합가스비율의 증가에 따라 다이아몬드의 생성입자 수밀도는 감소하였고, 이와 동시에 결정형상도 (111)면과 (100)면이 혼재된 cobo octahedron형에서 octahedron인 (111)면으로 변화되었다. 한편, 기판온도증가에 따라 생성입자의 수밀도가 증가하고 성장속도도 빨라져 조대한 결정을 얻었으며, 생성된 입자형성은 (111)면애 지배적이다가 (100)결정면이 점차 많아지는 양상을 나타내었다.

• 한국세라믹학회지
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• 제27권3호
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• pp.401-411
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• 1990

Deposition of diamond films on Si(100) from the mixtures of methane and hydrogen were investigated using hot W filament CVD method. The nucleation density could be increased thousandfold by surface treatment with SiC powder. Upon oxygen addition to the mixture, crystal facets became developed more clearly by selectively removing non-diamond carbons, but the film growth rate generally decreased. However, at a very high methane content(e.g. 10%), a small amount of oxygen addition has resulted in an increase in the film deposition rate presumably by promotion of methane decomposition. When the gas pressure was varied, the growth rate exhibited a maxiumum at around 20torr and the film crystallinity steadily improved with the pressure increase. The observed variation of the growth rate by oxygen addition was discussed in terms of its role in the pyrolysis and the subsequent gas phase reactions.

• 한국세라믹학회지
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• 제22권3호
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• pp.53-59
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• 1985

Nucleation and crystallization of $\beta$-eucryptite in a glass of molecular percentage composition Li2O.Al2O3.2SiO2 are studied. The glasses are made by quenching of the melts from 143$0^{\circ}C$ to room temperature. Heat-treatment for nucleation and crystal growth are caried out at various temperature in the range between 50$0^{\circ}C$ and 80$0^{\circ}C$ with different duration of time. The amounts of crystallization are estimated by the method of x-ray powder diffraction. As the results a time-temperature-transformation relation for crystallization is derived. The maximum rate of crystallization is observed at about 75$0^{\circ}C$ from the T-T-T-curve while the crystallization temperature is detected at 67$0^{\circ}C$ by DTA measurement. The crystallization temperature moved to 62$0^{\circ}C$ by adding 5 weight percents of TiO2 and it moved to 78$0^{\circ}C$ by adding 2 weight percents of V2O5. The crystallization temperature moved to 62$0^{\circ}C$ by adding 5 weight percent of TiO2 it moved to 78$0^{\circ}C$ by adding 2 weight percents of V2O5 The activation energy for crystallization from the pure glass is calculated as 68 Kcal/mol and it varied to 53 Kcal/mol and 110Kcal/mol when 5 weight percents of TiO2 and weight percents of V2O5 are added respectively.