• Bulletin of the Korean Chemical Society
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• v.16 no.7
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• pp.600-603
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• 1995

A series of samples in the Sm1-xSrxCoO3-y(x=0.00, 0.25, 0.50, 0.75 and 1.00) system has been prepared at 1200 ℃ under ambient atmosphere. The X-ray diffraction patterns of the samples with x=0.00 and 0.25 are indexed with orthorhombic symmetry like GdFeO3 and x=0.50 appears to be perfectly cubic. In the tetragonal system (x=0.75), the structure is similar to that of SrCoO2.80. The composition of x=1.00, SrCoO2.52, shows the brownmillerite-type structure. The reduced lattice volume is increased with x value in this system. The chemical analysis shows the τ value (the amount of the Co4+ ions in the system) is maximized at the composition of x=0.50. Nonstoichiometric chemical formulas are determined by the x, τ and y values. The electrical conductivity has been measured in the temperature range of 78 to 1000 K. The activation energy is minimum for those of x=0.25 and x=0.50 with metallic behavior. First-order semiconductor-to-metal transition of SmCoO3 is not observed. Instead, a broad, high-order semiconductor-to-metal transition is observed. In general, the effective magnetic moment is increased with increasing τ values at low temperature. At high temperature, the magnetic moment is maximum for that of x=0.00. The 3d-electrons are collective and give ferromagnetism in x=0.50.

• Bulletin of the Korean Chemical Society
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• v.17 no.4
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• pp.321-324
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• 1996

Sr1+xSm1-xFeO4-y solid solutions with a composition range 0.00 ≤x≤1.00 have been prepared at 1200 ℃ in air under normal atmospheric pressure. All the solutions exhibit the K2NiF4-type structure of tetragonal system. Mohr salt analysis shows that the mole ratio of Fe4+ ion to Fe3+ ion or the τ value increases with the x value. Nonstoichiometric chemical formulas have been formulated from the x, τ, and y values. Electrical conductivity was measured in the temperature range of 173-373 K under atmospheric air pressure. The conductivities of each sample are varied within the semiconductivity range. The conductivity at constant temperature increases steadily with x value and activation energies are varied from 0.14 to 0.32 eV. The conduction mechanism of the ferrite system may be proposed as a hopping model of conduction electrons between the mixed valence states. The Mossbauer spectrum for the composition of x=0.00 shows a six line pattern by which the existence of Fe3+(I.S.=0.32 mm/sec) can only be identified. The spectra for the compositions of x=0.50 and 1.00 presents broad single line patterns showing a mixed valence state.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.2
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• pp.170-174
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• 2023

Nickel oxide is a nonstoichiometric transparent conductive oxide with p-type conductivity, a wide-band energy gap of 3.4~4.0 eV, and excellent chemical stability, making it a very important candidate as a material for bipolar devices. P-type conductivity in Transparent Conductive Oxides (TCO) is controlled by the oxygen vacancy concentration. During the TCO film deposition process, additional oxygen diffusing into the NiO structure causes the formation of Ni 3p ions and Ni vacancies. This eventually affects the hole concentration of the p-type oxide thin film. In this work, the surface morphology and the electrical characteristics were confirmed in accordance with the annealing atmosphere of the nickel oxide thin film.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.122.1-122.1
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• 2015

The dependence of electronic properties and local structure of tantalum oxide thin film on oxygen deficiency have been investigated by means of X-ray photoelectron spectroscopy (XPS), Reflection Electron Energy Loss Spectroscopy (REELS), and X-ray absorption spectroscopy (XAS). The XPS results showed that the oxygen flow rate change results in the appearance of features in the Ta 4f at the binding energies of 23.2 eV, 24.4 eV, 25.8, and 27.3 eV whose peaks are attributed to Ta1+, Ta2+, Ta3+, Ta4+, and Ta5+, respectively. The presence of nonstoichiometric state from tantalum oxide (TaOx) thin films could be generated by the oxygen vacancies. The REELS spectra suggested the decrease of band gap for tantalum oxide thin films with increasing oxygen deficiency. In addition, XAS spectra manifested both the increase of coordination number of the first Ta-O shell and a considerable reduction of the Ta-O bond distance with the decrease of oxygen deficiency.

• Applied Chemistry for Engineering
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• v.2 no.4
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• pp.385-392
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• 1991

Nonstoichiometry and defect model for $Ni_{1-x}O$ were determined by coulometric titration method. In the temperature range of 1123-1198K and oxygen partial pressure of 0.21-0.1 atm, the nonstoichiometry was found to be proportional to the fourth root of the oxygen partial pressure. This pressure dependence can be explained by the fact that nonstoichiometric $Ni_{1-x}O$ contains singly ionized metal vacancies as the predominant point defects. At T=1173K and $Po_2=0.21atm$, the nonstoichiometry, x was $1.21{\times}10^{-4}$. The standard formation enthalpy of defects in $Ni_{1-x}O$ was found, on the basis of this defect model, to be 0.95 eV. Also the result indicates that both of singly and doubly ionized metal vacancies are simultaneously present at above 1248K.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.8
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• pp.438-444
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• 2000

We report the effects of etch process parameters on the ohmic contact formation in the plasma etching of GaN. Planar inductively coupled plasma system with $CH_4/H_2/Ar$gas chemistry has been used as etch reactor. The contact resistance and the specific contact resistance have been investigated using transfer length method as a function of RF bias power and %Ar gas concentration in total flow rate. AES(Auger electron spectroscopy) analysis revealed that the etched GaN has nonstoichiometric Ga rich surface and was contaminated by carbon and oxygen. Especially large amount of carbon was detected at the sample etched for high bias power (or voltage) condition, where severe degradation of contact resistance was occurred. We achieved the low ohmic contact of $2.4{\times}10^{-3} {\Omega}cm^2$ specific contact resistance at the input power 400 W, RF bias power 150 W, and working pressure 10mTorr with 10 sccm $CH_4$, 15 sccm H2, 5 sccm Ar gas composition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1993.11a
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• pp.6-9
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• 1993

In this study, Sintering behavior, Crystallographic structure, Microwave Dielectric properties of the nonstoichiometric Ba$\_$1-x/(Zn$\_$1/3/Ta$\_$2/3/)O$_3$with 0 x 0.04 were investigated. A small amount(lmol%) of MnO$_2$is doped to the sample to complete the sintering. The degree of Zn and Ta ordering in B site and Lattice distortion were promoted by reducing Ba concentration. At x=0.01, Unloaded Q value reached above 7500 (at 10.5 GHZ) ; however, above x=0.01, Q value was greatly decreased, in spite of saturation in Zn-Ta ordering. At x=0.01, The Dielectric constant was 30 at 10.5GHz. and The Temperature Coefficient was estimated as 2ppm/$^{\circ}C$.

• Journal of the Korean Chemical Society
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• v.39 no.3
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• pp.157-162
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• 1995

The x values and electrical conductivities of the nonstoichiometric compounds $WO_{3-x}$ have been measured in the temperature range from 350 to 700$^{\circ}C$ under oxygen partial pressure of $2{\times}10_{-1}\;to\;1{\times}10_{-5}$ atm. The enthalpy of the defect formation shows an endothermic process, and the oxygen pressure dependence of the defect formation or 1/n varies from -1/5.2 to -1/5.9. The activation energy and 1/n value for the electrical conductivity are 0.24~0.29 eV and -1/4.3~-1/7.6, respectively. The Tungsten Oxide as a n-type semiconductor has predominently defect model of singly charged oxygen vacancy at low temperature, and of doubly charged oxygen vacancy at high temperature.

• Journal of the Korean Magnetics Society
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• v.18 no.5
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• pp.190-194
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• 2008

Epitaxial $L1_0$ FePd (001) thin films were successfully manufactured by sputtering deposition method. The structure and magnetic properties of FePd thin films were characterized as a function of Fe compositions. It was found that the long-range ordering parameter had a maximum for the stoichiometric composition, whereas the magnetic anisotropy had a maximum as the Fe content is decreased to slightly above the stoichiometric composition. This indicates that the stoichiometry is directly contributed to the chemical ordering and the magnetic anisotropy. These results imply that nonstoichiometric FePd compositions, with a slight excess of Pd, may in fact be preferred for applications that require high magnetic anisotropy.

• Korean Journal of Materials Research
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• v.21 no.8
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• pp.439-443
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• 2011

The crystal structure and magnetic properties of a new solid solution type ferrite $(Fe_2O_3)_5-(Al_2O_3)_{3.4}-(Ga_2O_3)_{0.6}-SiO$ were investigated using X-ray diffraction and M$\"{o}$ssbauer spectroscopy. The results of the X-ray diffraction pattern indicated that the crystal structure of the sample appears to be a cubic spinel type structure. The lattice constant (a = 8.317 ${\AA}$) decreases slightly with the substitution of $Ga_2O_3$ even though the ionic radii of the Ga ions are larger than that of the Al ions. The results can be attributed to a higher degree of covalency in the Ga-O bonds than in the Al-O and Fe-O bonds, which can also be explained using the observed M$\"{o}$ssbauer parameters, which are the magnetic hyperfine field, isomer shift, and quadrupole splitting. The drastic change in the magnetic structure according to the Ga ion substitution in the $ (Fe_2O_3)_5(Al_2O_3)_{4-x}(Ga_2O_3)_xSiO$ system and the low temperature variation have been studied through a M$\"{o}$ssbauer spectroscopy. The M$\"{o}$ssbauer spectrum at room temperature shows the superpositions of two Zeeman patterns and a strong doublet. It shows significant departures from the prototypical ferrite and is comparable with the diluted ferrite. The doublet of spectrum at room temperature appears to originate from superparamagnetic clusters and also the asymmetry of the doublet appears to be caused by the preferred orientation of the crystallites. The M$\"{o}$ssbauer spectra below room temperature show various complicated patterns, which can be explained by the freezing of the superparamagnetic clusters. On cooling, the magnetic states of the sample were various and multi critical.