• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.4
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• pp.451-456
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• 2014

A compact model of a depletion-mode silicon-nanowire (Si-NW) pH sensor is proposed. This drain current model is obtained from the Pao-Sah integral and the continuous charge-based model, which is derived by applying the parabolic potential approximation to the Poisson's equation in the cylindrical coordinate system. The threshold-voltage shift in the drain-current model is obtained by solving the nonlinear Poisson-Boltzmann equation for the electrolyte. The simulation results obtained from the proposed drain-current model for the Si-NW field-effect transistor (SiNWFET) agree well with those of the three-dimensional (3D) device simulation, and those from the Si-NW pH sensor model also agree with the experimental data.