• 한국재료학회지
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• 제11권5호
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• pp.398-404
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• 2001

SiC 보강재 표면에 도금된 Cu금속층이 Al/SiC복합재료의 젖음성에 미치는 영향을 검토하였다. 보강재에 대한 금속층의 도금은 무전해도금법을 이용하였으며, Al/SiC 복합재료의 제조는 텅스텐 발열체 진공로의$ 670^{\circ}C$~$900^{\circ}C$에서 제조하여 보강재와 기지간의 접촉부위를 촬영하여 젖음성을 측정하였다 젖음성 측정 결과 보강재에 도금된 Cu층은 젖음성을 향상시켰고, 젖음성의 개선은 보강재에 도금된 금속층과 기지간의 반응에 의해 계면에너지를 변화시킴으로서 나타난 결과이며. 반응을 통한 산화피막의 배제도 영향을 미친 것으로 판단된다

• 한국재료학회지
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• 제23권10호
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• pp.586-591
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• 2013

The printing of nanomaterials onto certain substrates is one of the key technologies behind high-speed interconnection and high-performance electronic devices. For the printing of next-generation electronic devices, a printing process which can be applied to a flexible substrate is needed. A printing process on a flexible substrate requires a lowtemperature, non-vacuum process due to the physical properties of the substrate. In this study, we obtained well-ordered Ag nanowires using modified gravure printing techniques. Ag nanowires are synthesized by a silver nitrate ($AgNO_3$) reduction process in an ethylene glycol solution. Ag nanowires were well aligned by hydrodynamic force on a micro-engraved Si substrate. With the three-dimensional structure of polydimethylsiloxane (PDMS), which has an inverse morphology relative to the micro-engraved Si substrate, the sub-micron alignment of Ag nanowires is possible. This technique can solve the performance problems associated with conventional organic materials. Also, given that this technique enables large-area printing, it has great applicability not only as a next-generation printing technology but also in a range of other fields.

• 반도체디스플레이기술학회지
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• 제2권1호
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• pp.1-5
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• 2003

Plasma generator based on non-self-sustained low-pressure arc discharge has been examined as a tool for deposition of highly-adhesive hydrogenated amorphous diamond-like carbon(DLC) films. Since the discharge is stable in wide range of gas pressures and currents, this plasma source makes possible to realize both plasma-immersion ion implantation(PIII) and plasma-immersion ion deposition(PIID) in a unified vacuum cycle. The plasma parameters were measured as functions of discharge current. Discharge and substrate bias voltage parameters have been determined for the PIII and PIID modes. For PIID it has been demonstrated that hard and well-adherent DLC coating are produced at 200-500 eV energies per deposited carbon atom. The growth rates of DLC films in this case are about 200-300 nm/h. It was also shown that short(∼60$\mu\textrm{s}$) high-voltage(> 1kV) substrate bias pulses are the most favorable for achieving high hardness and good adhesion of DLC, as well as for reducing of residual intrinsic stress are.

• 한국축산식품학회지
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• 제35권5호
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• pp.703-706
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• 2015

The interaction of plasma with liquid generates nitrogen species including nitrite (NO⁻₂). Therefore, the color developing capacity of plasma-treated water (PTW) as a nitrite source for meat curing was investigated in this study. PTW, which is generated by surface dielectric barrier discharge in air, and the increase of plasma treatment time resulted in increase of nitrite concentration in PTW. The PTW used in this study contains 46 ppm nitrite after plasma treatment for 30 min. To evaluate the effect of PTW on the cured meat color, meat batters were prepared under three different conditions (control, non-cured meat batter; PTW, meat batter cured with PTW; Sodium nitrite, meat batter cured with sodium nitrite). The meat batters were vacuum-packaged and cooked in a water-bath at 80℃ for 30 min. The typical color of cured meat developed in cooked meat batter treated with sodium nitrite or PTW. The lightness (L*) and yellowness (b*) values were similar in all conditions, whereas, the redness (a*) values of cooked meat batter with PTW and sodium nitrite (p<0.05) were significantly higher than the control. These data indicate that PTW can be used as a nitrite source in the curing process of meat without addition of other nitrite sources.

• Current Photovoltaic Research
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• 제2권3호
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• pp.115-119
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• 2014

$Cu(In,Ga)Se_2$ (CIGS) thin films have been used as a light absorbing layer in high-efficiency solar cells. In order to improve the quality of the CIGS thin film, often selenization step is applied. Especially when the thin film was formed by non-vacuum powder process, selenization can help to induce grain growth of powder and densification of the thin film. However, selenization is not trivial. It requires either the use of toxic gas, $H_2Se$, or expensive equipment which raises the overall manufacturing cost. Herein, we would like to deliver a new, simple method for selenization. In this method, instead of using a costly two-zone furnace, use of a regular tube furnace is required and selenium is supplied by a mixture of selenium and ceramic powder such as alumina. By adjusting the ratio of selenium vs. alumina powder, selenium vaporization can be carefully controlled. Under the optimized condition, steady supply of selenium vapor was possible which was evidently shown by large grain growth of CIGS within a thin powder layer.

• 한국태양에너지학회 논문집
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• 제30권6호
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• pp.28-33
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• 2010

Solar collectors to be applied are mainly flat-plate or vacuum tube collector which is used for hot water supply of house because of low heat value and low temperature. There are a necessity to expand applicable scope of solar collector into the industrial process heat source and air conditioner for coping with renewable energy policy of government and industrial trend. This study is to analysis the performance of PTC solar collector of concentrating type and flat-plate of non-concentrating. For this, temperature difference and heating value as insolation of air outside is measured from these two collectors mounted on 2-axial solar tracking system. It is investigated that temperature profile obtained from PTC solar collector is uniform and collecting heat per unit area is 6.8kcal/$m^2$ min which is about 3 times with compare to flat-plate collector of 2kcal/$m^2$min. Also the amount of heat to be produced from PTC solar collector is 3 Mcal/$m^2$ which is about 2 times with compare to flat-plate collector of 1.5Mcal/$m^2$ as a result of operating these two collectors during one month. Therefore, it is obtained that heat collecting performance of PTC solar collector is superior to flat-plate.

• 대한치과보철학회지
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• 제18권1호
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• pp.49-57
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• 1980

The adhesive mechanisms on the metal-ceramic restorations have been reported to be mechanical interlocking, chemical bonding, compressive force, and Van der Waal's force, etc. Of these, the mechanical interlocking and chemical bonding forces are thought to affect the adhesive force between Ni-Cr alloy and porcelain. This study investigates the adhesion of Ni-Cr alloy to porcelain according to surface treatment. For this purpose, the following experiments were made; The compositions of Ni-Cr alloy as cast by emission spectrograph, and the oxides produced on Ni-Cr alloy during degassing at $1850^{\circ}F$ for 30 minutes in air and in vacuum were analyzed by X-ray diffractograph. The metal phases of Ni-Cr alloy were observed according to porcelain-baking cyclic heat treatment by photo microscope and the distribution and the shift of elements of Ni-Cr alloy and porcelain and the failure phases between Ni-Cr alloy and porcelain by scanning electron microscope. The adhesive force between Ni-Cr alloy and porcelain was measured according to surface treatment with oxidization and roughening by Instron Universal Testing Machine. Results were as follows; 1. The metal phases of Ni-Cr alloy as cast and degassing state showed the enlarged and fused core, but when subjected to porcelain-baking cyclic heat treatment, showed a dendrite growing. 2. The kinds of metal oxides produced on Ni-Cr alloy during degassing were found to be NiO and $Cr_2O_3$. 3. The distribution of elements at the interface of Ni-Cr alloy and porcelain in degassing state showed demarcation line, but in roughening state, showed mechanical interlocking phase. 4. The shift of elements at the interface occurred in both states, but the shift amount was found to be larger in roughening than in degassing. 5. The adhesive force between Ni-Cr alloy and porcelain was found to be $3.45{\pm}0.93kg/mm^2$, in degassing and $3.82{\pm}0.99kg/mm^2$, in roughening. 6. The failure phase between Ni-Cr alloy and porcelain showed the mixed type failure.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 춘계학술발표대회
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• pp.27.1-27.1
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• 2009

Chalcopyrite구조의CIS 화합물은 직접천이형 반도체로서 높은 광흡수 계수 ($1\times10^5\;cm^{-1}$)와 밴드갭 조절의 용이성 및 열적 안정성 등으로 인해 고효율 박막 태양전지용 광흡수층 재료로 많은 관심을 끌고 있다. CIS 계 물질에 속하는 $Cu(InGa)Se_2$ (CIGS) 태양전지의 경우 박막 태양전지 중 세계 최고 효율인 20%를 달성한 바 있으며, 이는 기존 다결정 웨이퍼형 실리콘 태양전지의 효율에 근접하는 수치이다. 그러나 이러한 우수한 효율에도 불구하고 박막 증착시 동시증발장치 혹은 스퍼터링장치와 같은 고가 진공장비를 사용하게 되면 공정단가가 높을 뿐만 아니라 사용되는 재료의 20-50%의 손실을 감수해야만 한다. 또한 대면적 Cell제작에 어려움이 있기 때문에 기술개발 이후의 상용화 단계를 고려할 때 광흡수층 박막 제조 공정단가를 획기적으로 낮출 수 있고 대면적화가 용이한 신 공정 개발이 필수적이다. 이러한 관점에서 비진공 코팅방법에 의한 CIS 광흡수층 제조 기술은 CIS 태양전지의 저가화 및 대면적화를 가능케 하는 차세대 기술로 인식되고 있고 최근 급속한 발전을 이루고 있는 미세 입자 합성, 제어 및 응용 기술에 부합하여 많은 세계 연구기관 및 기업체에서 활발히 연구를 진행하고 있다. 비진공 방식에 의한 CIS 광흡수층 제조 기술은 전구체 물질의 형태에 따라 크게 입자형 전구체를 사용하는 방법과 용액 전구체를 사용하는 방법으로 나눌 수 있다. 본 연구에서는 용액 전구체를 paste 공정으로 실험하였다. 이는 용액전구체 물질 제조가 입자형 전구체 제조에 비해 매우 간단하고, 전구체 물질 내 구성원소의 원자비를 쉽게 조절할 수 있다는 장점 및 사용효율이 높아 소량의 source로도 박막 제작이 가능해 공정 단가 절감에 큰 효과가 기대되기 때문이다. 실험에 사용 된 용액전구체는 $Cu(NO_3)$ 및 $InCl_3$, $Ga(NO_3)$를 Cu, In, Ga 출발 물질로 선정하여 이를 메탄올에 완전히 용해시켜 binder인 셀룰로오즈와 메탄올을 섞은 용액과 혼합하여 전구체 슬러리를 형성하였다. 이 슬러리를 paste공정으로 precursor막을 입히고 저온 건조 후 Se 분위기에서 열처리하여 CIGS박막을 얻을 수 있었다. 박막의 특성을 XRD, SEM, AES, TGA등으로 분석하였다.

• Journal of Information Display
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• 제4권2호
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• pp.1-6
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• 2003

In this paper, we demonstrate that the organic electrophosphorescent device is driven by the organic thin film transistor with spin-coated photoacryl gate insulator. It was found that electrical output characteristics in our organic thin film transistors using the staggered-inverted top-contact structure showed the non-saturated slope in the saturation region and the sub-threshold nonlinearity in the triode region, where we obtained the maximum power luminance that was about 90 $cd/m^2$. Field effect mobility, threshold voltage, and on-off current ratio in 0.45 ${\mu}m$ thick gate dielectric layer were 0.17 $cm^2/Vs$, -7 V, and $10^6$ , respectively. In order to form polyimide as a gate insulator, vapor deposition polymerization process was also introduced instead of spin-coating process, where polyimide film was co-deposited by high-vacuum thermal evaporation from 4,4'-oxydiphthalic anhydride (ODPA) and 4,4'-oxydianiline (ODA) and cured at 150${\sqsubset}$for 1hr. It was also found that field effect mobility, threshold voltage, on-off current ratio, and sub-threshold slope with 0.45 ${\mu}m$ thick gate dielectric films were 0.134 $cm^2/Vs$, -7 V, and $10^6$ A/A, and 1 V/decade, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.111-111
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• 2007

Further scaling the semiconductor devices down to low dozens of nanometer needs the extremely shallow depth in junction and the intentional counter-doping in the silicon gate. Conventional ion beam ion implantation has some disadvantages and limitations for the future applications. In order to solve them, therefore, plasma source ion implantation technique has been considered as a promising new method for the high throughputs at low energy and the fabrication of the ultra-shallow junctions. In this paper, we study about the effects of DC bias and base pressure as a process parameter. The diluted mixture gas (5% $PH_3/H_2$) was used as a precursor source and chamber is used for vacuum pressure conditions. After ion doping into the Si wafer(100), the samples were annealed via rapid thermal annealing, of which annealed temperature ranges above the $950^{\circ}C$. The junction depth, calculated at dose level of $1{\times}10^{18}/cm^3$, was measured by secondary ion mass spectroscopy(SIMS) and sheet resistance by contact and non-contact mode. Surface morphology of samples was analyzed by scanning electron microscopy. As a result, we could accomplish the process conditions better than in advance.