Effects of Cl$_2$ /H$_2$ Plasma Condition on the etch Properties of n-GaN and ohmic Contact Formation
($\textrm{Cl}_{2}/\textrm{H}_{2}$ 플라즈마 조건이 n-GaN 식각 특성 및 저저항 접촉 형성에 미치는 영향)
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- Korean Journal of Materials Research
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- v.9 no.5
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- pp.496-502
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- 1999