• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.207-207
• /
• 2011

Amorphous transparent oxide semiconductors (a-TOS) have been widely studied for many optoelectronic devices such as AM-OLED (active-matrix organic light emitting diodes). Recently, Nomura et al. demonstrated high performance amorphous IGZO (In-Ga-Zn-O) TFTs.1 Despite the amorphous structure, due to the conduction band minimum (CBM) that made of spherically extended s-orbitals of the constituent metals, an a-IGZO TFT shows high mobility.2,3 But IGZO films contain high cost rare metals. Therefore, we need to investigate the alternatives. Because Aluminum has a high bond enthalpy with oxygen atom and Alumina has a high lattice energy, we try to replace Gallium with Aluminum that is high reserve low cost material. In this study, we focused on the electrical properties of IZO:Al thin films as a channel layer of TFTs. IZO:Al were deposited on unheated non-alkali glass substrates (5 cm ${\times}$ 5 cm) by magnetron co-sputtering system with two cathodes equipped with IZO target and Al target, respectively. The sintered ceramic IZO disc (3 inch ${\phi}$, 5 mm t) and metal Al target (3 inch ${\phi}$, 5 mm t) are used for deposition. The O2 gas was used as the reactive gas to control carrier concentration and mobility. Deposition was carried out under various sputtering conditions to investigate the effect of sputtering process on the characteristics of IZO:Al thin films. Correlation between sputtering factors and electronic properties of the film will be discussed in detail.

• Bulletin of the Korean Chemical Society
• /
• v.34 no.11
• /
• pp.3387-3390
• /
• 2013

Catalytic gasification of mandarin waste residue was carried out using direct and indirect catalyst-contact methods for the first time. In the indirect method, non-catalytic reaction in a reactor was followed by catalytic upgrading of vapor product in another reactor. Two different catalysts, $Ni/{\gamma}-Al_2O_3$ and $Ni/CeO_2-ZrO_2$, were employed. $CeO_2-ZrO_2$ support was prepared using hydrothermal synthesis in supercritical water. The catalysts were characterized by $H_2$-temperature programmed reduction and Brunauer-Emmett-Teller analyses. Under the condition of equivalent ratio (ER) = 0, the indirect catalyst-contact method led to a higher gas yield than the direct method. Under ER = 0.2, the yield of biogas obtained over $Ni/CeO_2-ZrO_2$ was higher than that obtained over $Ni/{\gamma}-Al_2O_3$. Also, the coke formation of $Ni/CeO_2-ZrO_2$ was lower than that of $Ni/{\gamma}-Al_2O_3$. Such results were attributed to the higher reducibility and better lattice oxygen mobility of $Ni/CeO_2-ZrO_2$, which were advantageous for partial oxidation reaction.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.08a
• /
• pp.142.2-142.2
• /
• 2013

The effect of substrate on catalytic activity of CO oxidation with transition metal Platinum nanoparticles on doped and undoped TiO2 was investigated. Titanium dioxide was doped chemically with non-metal anions including nitrogen and fluorine. Undoped TiO2 was synthesized via simple conventional sol-gel route. Thin films of titania were developed by spin coating technique and the characterization techniques SEM, XRD, UV-Vis Absorption Spectroscopy and XPS were carried out to examine the morphology of films, crystal phase, crystallites, optical properties and elemental composition respectively. XPS analysis from doped TiO2 confirmed that the nitrogen site were interstitial whereas fluorine was doped into TiO2 lattice substitutionally. Catalytic activity systems of Pt/doped-TiO2 and Pt/undoped-TiO2 were fabricated to reveal the strong metal-support interaction effect during catalytic activity of CO oxidation reactions. By arc plasma deposition technique, platinum nanoparticles with mean size of 2.7 nm were deposited on the thin films of doped and undoped titanium dioxide. The CO oxidation was performed with 40 Torr CO and 100 Torr O2 with 620 Torr He carrier gas. Turn over frequency was observed two to three folds enhancement in case of Pt/doped TiO2 as compared to Pt/TiO2. The electronic excitation and the oxygen vacancies that were formed with the doping process were the plausible reasons for the enhancement of catalytic activity.