• Title/Summary/Keyword: non-equilibrium Green function method

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Non-Equilibrium Green Function Method in Spin Transfer Torque

  • You, Chun-Yeol
    • Journal of Magnetics
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    • v.12 no.2
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    • pp.72-76
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    • 2007
  • We investigate the spin transfer torque in metallic multilayer system by employing Keldysh non-equilibrium Green function method. We study the dependences of the spin transfer torque on the detailed energy configuration of ferromagnetic, spacer, and lead layers. With Keldysh non-equilibrium Green function method applied to a single band model, we explore spin transfer torque effect in various layer structures and for various material parameters.

Electronic transport properties of linear carbon chains encapsulated inside single-walled carbon nanotubes

  • Tojo, Tomohiro;Kang, Cheon Soo;Hayashi, Takuya;Kim, Yoong Ahm
    • Carbon letters
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    • v.28
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    • pp.60-65
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    • 2018
  • Linear carbon chains (LCCs) encapsulated inside the hollow cores of carbon nanotubes (CNTs) have been experimentally synthesized and structurally characterized by Raman spectroscopy and transmission electron microscopy. However, in terms of electronic conductivity, their transportation mechanism has not been investigated theoretically or experimentally. In this study, the density of states and quantum conductance spectra were simulated through density functional theory combined with the non-equilibrium Green function method. The encapsulated LCCs inside (5,5), (6,4), and (9,0) single-walled carbon nanotubes (SWCNTs) exhibited a drastic change from metallic to semiconducting or from semiconducting to metallic due to the strong charge transfer between them. On the other hand, the electronic change in the conductance value of LCCs encapsulated inside the (7,4) SWCNT were in good agreement with the superposition of the individual SWCNTs and the isolated LCCs owing to the weak charge transfer.

First-principles Calculations of the Phonon Transport in Carbon Atomic Chains Based on Atomistic Green's Function Formalism

  • Kim, Hu Sung;Park, Min Kyu;Kim, Yong-Hoon
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.425.1-425.1
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    • 2014
  • Thermal transport in nanomaterials is not only scientifically interesting but also technological important for various future electronic, bio, and energy device applications. Among the various computation approaches to investigate lattice thermal transport phenomena in nanoscale, the atomistic nonequilibrium Green's function approach based on first-principles density functional theory calculations appeared as a promising method given the continued miniaturization of devices and the difficulty of developing classical force constants for novel nanoscale interfaces. Among the nanometerials, carbon atomic chains, namely the cumulene (all-doulble bonds, ${\cdots}C=C=C=C{\cdots}$) and polyyne (alternation of single and triple bonds, ${\cdots}C{\equiv}C-C{\equiv}C{\cdots}$) can be considered as the extream cases of interconnction materials for nanodevices. After the discovery and realization of carbon atomic chains, their electronic transport properties have been widely studied. For the thermal transport properties, however, there have been few literatures for this simple linear chain system. In this work, we first report on the development of a non-equilibrium Green's function theory-based computational tool for atomistic thermal transport calculations of nanojunctions. Using the developed tool, we investigated phonon dispersion and transmission properties of polyethylene (${\cdots}CH2-CH2-CH2-CH2{\cdots}$) and polyene (${\cdots}CH-CH-CH-CH{\cdots}$) structures as well as the cumulene and polyyne. The resulting phonon dispersion from polyethylene and polyene showed agreement with previous results. Compared to the cumulene, the gap was found near the ${\Gamma}$ point of the phonon dispersion of polyyne as the prediction of Peierls distortion, and this feature was reflected in the phonon transmission of polyyne. We also investigated the range of interatomic force interactions with increase in the size of the simulation system to check the convergence criteria. Compared to polyethylene and polyene, polyyne and cumulene showed spatially long-ranged force interactions. This is reflected on the differences in phonon transport caused by the delicate differences in electronic structure.

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Three-Dimensional Simulations of the Jeans-Parker Instability

  • LEE SANG MIN;HONG SEUNG SOO;KIM AND JONGSOO
    • Journal of The Korean Astronomical Society
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    • v.34 no.4
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    • pp.285-287
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    • 2001
  • We have studied the nonlinear evolution of a magnetized disk of isothermal gas, which is sustained by its self-gravity. Our objective is to investigate how the Jeans, Parker, and convective instabilities compete with each other in structuring/de-structuring large scale condensations in such disk. The Poisson equation for the self-gravity has been solved with a fourth-order accurate Fourier method along with the Green function, and the MHD part has been handled by an isothermal TVD code. When large wavelength perturbations are applied, the combined action of the Jeans and Parker instabilities suppresses the development of the convection and forms a dense core of prolate shape in the mid-plane. Peripheral structures around it are filamentary. The low density filaments connect the dense core to the diffuse upper region. On the other hand, when small wavelength perturbations are applied, the disk develops into an equilibrium state which is reminiscent of the Mouschovias's 2-D non-linear equilibrium of the classical Parker instability under an externally given gravity.

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CMOS Inverter Design based on Double Gate Ultra-Thin Body MOSFETs

  • Park, Sang Chun;Ahn, Yongsoo
    • Proceeding of EDISON Challenge
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    • 2015.03a
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    • pp.343-346
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    • 2015
  • Ultra-thin body transistor is one of the emerging devices since it control leakage current flows through substrate. In addition, it can be operated by double gates, thus, its on/off current ratio is higher than conventional counterpart. In this paper, we design and investigate a CMOS inverter based on ultra-thin body MOSFETs to estimate its performance in real application. NEGF (non-equilibrium Green's function) method is used to obatain relationship between drain current and voltage. DC transfer is extracted from the relationship, and FO4 (fanout-of-4) propagation delay is reported as 5.1 ps estimated by a simple model.

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Transport properties of boron/nitrogen/phosphorus binary doped graphene nanoribbons: An ab initio study

  • Kim, Seong Sik;Kim, Han Seul
    • Proceeding of EDISON Challenge
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    • 2013.04a
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    • pp.273-277
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    • 2013
  • We apply a density functional theory (DFT) and DFT-based non-equilibrium Green's function approach to study the electronic and transport properties of graphene nanoribbons (GNRs) co-doped with boron-nitrogen, nitrogen-phosphorus and boron-phosphorus. We analyze the structures and charge transport properties of co-doped GNRs and particularly focus on the novel effects that are absent for the single N-, B-, or P-doped GNRs. It is found that co-doped GNRs tend to be doped at the edges and the electronic structures of co-doped GNRs are very sensitive to the doping sites. Also, in case of B-N and B-P co-doped GNRs, conductance dips of single-doped GNRs disappeared with the disappearance of localized states associated with doped atoms. This may lead to a possible method of band engineering of GNRs and benefit the design of graphene electronic devices.

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Electronic properties of graphene nanoribbons with Stone-Wales defects using the tight-binding method

  • M.W. Chuan;S.Z. Lok;A. Hamzah;N.E. Alias;S. Mohamed Sultan;C.S. Lim;M.L.P Tan
    • Advances in nano research
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    • v.14 no.1
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    • pp.1-15
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    • 2023
  • Driven by the scaling down of transistor node technology, graphene became of interest to many researchers following the success of its fabrication as graphene nanoribbons (GNRs). However, during the fabrication of GNRs, it is not uncommon to have defects within the GNR structures. Scaling down node technology also changes the modelling approach from the classical Boltzmann transport equation to the quantum transport theory because the quantum confinement effects become significant at sub-10 nanometer dimensions. The aim of this study is to examine the effect of Stone-Wales defects on the electronic properties of GNRs using a tight-binding model, based on Non-Equilibrium Green's Function (NEGF) via numeric computation methods using MATLAB. Armchair and zigzag edge defects are also implemented in the GNR structures to mimic the practical fabrication process. Electronic properties of pristine and defected GNRs of various lengths and widths were computed, including their band structure and density of states (DOS). The results show that Stone-Wales defects cause fluctuation in the band structure and increase the bandgap values for both armchair GNRs (AGNRs) and zigzag GNRs (ZGNRs) at every simulated width. In addition, Stone-Wales defects reduce the numerical computation DOS for both AGNRs and ZGNRs. However, when the lengths of the structures increase with fixed widths, the effect of the Stone-Wales defects become less significant.

Electron transport properties of Y-type zigzag branched carbon nanotubes

  • MaoSheng Ye;HangKong, OuYang;YiNi Lin;Quan Ynag;QingYang Xu;Tao Chen;LiNing Sun;Li Ma
    • Advances in nano research
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    • v.15 no.3
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    • pp.263-275
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    • 2023
  • The electron transport properties of Y-type zigzag branched carbon nanotubes (CNTs) are of great significance for micro and nano carbon-based electronic devices and their interconnection. Based on the semi-empirical method combining tight-binding density functional theory and non-equilibrium Green's function, the electron transport properties between the branches of Y-type zigzag branched CNT are studied. The results show that the drain-source current of semiconducting Y-type zigzag branched CNT (8, 0)-(4, 0)-(4, 0) is cut-off and not affected by the gate voltage in a bias voltage range [-0.5 V, 0.5 V]. The current presents a nonlinear change in a bias voltage range [-1.5 V, -0.5 V] and [0.5 V, 1.5 V]. The tangent slope of the current-voltage curve can be changed by the gate voltage to realize the regulation of the current. The regulation effect under negative bias voltage is more significant. For the larger diameter semiconducting Y-type zigzag branched CNT (10, 0)-(5, 0)-(5, 0), only the value of drain-source current increases due to the larger diameter. For metallic Y-type zigzag branched CNT (12, 0)-(6, 0)-(6, 0), the drain-source current presents a linear change in a bias voltage range [-1.5 V, 1.5 V] and is symmetrical about (0, 0). The slope of current-voltage line can be changed by the gate voltage to realize the regulation of the current. For three kinds of Y-type zigzag branched CNT with different diameters and different conductivity, the current-voltage curve trend changes from decline to rise when the branch of drain-source is exchanged. The current regulation effect of semiconducting Y-type zigzag branched CNT under negative bias voltage is also more significant.

Electron Trapping and Transport in Poly(tetraphenyl)silole Siloxane of Quantum Well Structure

  • Choi, Jin-Kyu;Jang, Seung-Hyun;Kim, Ki-Jeong;Sohn, Hong-Lae;Jeong, Hyun-Dam
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.158-158
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    • 2012
  • A new kind of organic-inorganic hybrid polymer, poly(tetraphenyl)silole siloxane (PSS), was invented and synthesized for realization of its unique charge trap properties. The organic portions consisting of (tetraphenyl)silole rings are responsible for electron trapping owing to their low-lying LUMO, while the Si-O-Si inorganic linkages of high HOMO-LUMO gap provide the intrachain energy barrier for controlling electron transport. Such an alternation of the organic and inorganic moieties in a polymer may give an interesting quantum well electronic structure in a molecule. The PSS thin film was fabricated by spin-coating of the PSS solution in THF organic solvent onto Si-wafer substrates and curing. The electron trapping of the PSS thin films was confirmed by the capacitance-voltage (C-V) measurements performed within the metal-insulator-semiconductor (MIS) device structure. And the quantum well electronic structure of the PSS thin film, which was thought to be the origin of the electron trapping, was investigated by a combination of theoretical and experimental methods: density functional theory (DFT) calculations in Gaussian03 package and spectroscopic techniques such as near edge X-ray absorption fine structure spectroscopy (NEXAFS) and photoemission spectroscopy (PES). The electron trapping properties of the PSS thin film of quantum well structure are closely related to intra- and inter-polymer chain electron transports. Among them, the intra-chain electron transport was theoretically studied using the Atomistix Toolkit (ATK) software based on the non-equilibrium Green's function (NEGF) method in conjunction with the DFT.

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