• 한국안전학회지
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• 제14권4호
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• pp.126-134
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• 1999

In this study, plasma source ion implantation was used to improve the wear properties of biocompatible titanium implant. In order to observe the effect of ion energy and dose on wear property of titanium implant, pin-on-disk type wear tests in Hank's solution were carried out. The friction coefficient of ion implanted specimens were increased from 0.47 to 0.65 under high energy and ion dose conditions. As increasing ion energy and ion dose, the amount of wear was reduced.

• 한국진공학회지
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• 제10권3호
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• pp.328-334
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• 2001

초박막 게이트 유전막 및 비휘발성 기억소자의 게이트 유전막으로 연구되고 있는 NO/$N_2$O 질화산화막 및 재산화질화산화막의 특성을 D-SIMS(dynamic secondary ion mass spectrometry), ToF-SIMS(time-of-flight secondary ion mass spectrometry), XPS(x-ray Photoelectron spectroscopy)으로 조사하였다. 시료는 초기산화막 공정후에 NO 및 $N_2$O 열처리를 수행하였으며, 다시 재산화공정을 통하여 질화산화막내 질소의 재분포를 형성토록 하였다. D-SIMS 분석결과 질소의 중심은 초기산화막 계면에 존재하며 열처리 공정에서 NO에 비해서 $N_2$O의 경우 질소의 분포는 넓게 나타났다. 질화산화막내 존재하는 질소의 상태를 조사하기 위하여 ToF-SIMS 및 XPS 분석을 수행한 결과 SiON, $Si_2$NO의 결합이 주도적이며 D-SIMS에서 조사된 질소의 중심은 SiON 결합에 기인한 것으로 예상된다. 재산화막/실리콘 계면근처에 존재하는 질소는 $Si_2$NO 결합형태로 나타나며 이는 ToF-SIMS로 얻은 SiN 및 $Si_2$NO 결합종의 분포와 일치하였다.

• 공업화학
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• 제5권6호
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• pp.1024-1029
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• 1994

경북 감포지역에서 산출되는 천연 제올라이트를 각기 다른 농도의 HCl과 NaOH로 화학처리한 시료와 금속양이온 교환한 시료를 제조 하였다. 이들 시료에 대한 질소의 흡착특성을 $25^{\circ}C$, 100~760 torr의 범위에서 조사하였다. 산처리한 시료의 질소 흡착량은 처리하기 전보다 감소하였으며, 알칼리 처리한 시료는 많이 증가하였다. 0.5N-HCl 처리 후 0.5N-NaOH로 연속처리한 경우 약 200% 정도 흡착량이 개선되었으나, 알칼리 처리 후 산으로 연속처리한 경우에는 오히려 감소하였다. $Na^+$, $K^+$, $Cs^+$를 이온교환한 경우 이온의 크기가 증가할수록 흡착량은 감소했으며, $Mg^{2+}$, $Ca^{2+}$, $Ba^{2+}$를 이온교환한 경우는 이온의 크기가 증가할수록 흡착량이 증가하였다.

• 한국진공학회지
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• 제4권S2호
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• pp.100-105
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• 1995

Nitrogen implantation process has been applied for improvement of wear resistance of Zircaloy-4 fuel cladding materials. Nitrogen was implanted at 120keV to a total dose range of $1\times 10^{17}$ions/$\textrm{cm}^2$ to $1\times 10^{18}$ions/$\textrm{cm}^2$ at various temperatures between $270^{\circ}C$ and $671^{\circ}C$. The microstructure changes by nitrogen implantation were analyzed by XRD and AES and wear behavior was evaluated by performing ball-on-disc type wear testing at various loads and sliding velocities under unlubricated condition. Nitrogen implantation produced ZrNx nitride above $3\times 10^{17}$ions/$\textrm{cm}^2$ as well as heavy dislocations, which resluted in an increase in microhardness of the implanted surface of up to 1400 $H_k$ from 200 $H_k$ of unimplanted substrate. Hardness was also found to be increased with increasing implantation temperature up to 1760 $H_k$ at $620^{\circ}C$. The wear resistance was greatly improved as total ion dose and implantation temperature increased. The effective enhancement of wear resistance at high dose and temperature is believed to be due to the significant hardening associated with high degree of precipitation of Zr nitrides and generation of prismatic dislocation loops.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.236-236
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• 2011

Silicon oxynitride (SiON) was deposited for gas barrier film on polyethylene terephthalate (PET) using octamethylycyclodisiloxane (Si4O4C8H24, OMCTS) precursor by plasma enhanced chemical vapor deposition (PECVD) at low temperature. The ion flux and substrate temperature were measured by oscilloscope and thermometer. The chemical bonding structure and barrier property of films were characterized by Fourier transform infrared (FT-IR) spectroscopy and the water vapor transmission rate (WVTR), respectively. The deposition rate of films increases with RF bias and nitrogen dilution due to increase of dissociated precursor and nitrogen ion incident to the substrate. In addition, we confirmed that the increase of nitrogen dilution and RF bias reduced WVTR of films. Because, on the basis of FT-IR analysis, the increase of the nitrogen gas flow rate and RF bias caused the increase of the C=N stretching vibration resulting in the decrease of macro and nano defects.

• Journal of Microbiology and Biotechnology
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• 제5권3호
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• pp.158-162
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• 1995

The effect of carbon and nitrogen sources on the production of novel aminopeptidase M inhibitors MR-387A and B by Streptomyces sp. SL-387 has been studied. High D-glucose and ammonia concentrations (5$\%$ and 1$\%$, respectively) exerted a negative influence on the inhibitor formation. The suppressive effect of glucose on the inhibitor formation is probably caused by an effect of medium pH rather than that of cyclic AMP. To establish the optimum conditions for inhibitor overproduction, various nitrogen sources and ammonium ion-trapping agents were examined. The use of ammonia slow-releasing nitrogen sources such as soybean meal and fish meal, or ammonium ion-trapping agents such as kaoline, celite, and natural zeolite achieved the enhancement of inhibitor production. These results also indicate that inhibitor formation is affected by ammonium ion repression.

• 폴리머
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• 제24권4호
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• pp.453-458
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• 2000

이미다졸-금속 이온 구조를 갖는 고분자 Langmuir-Blodgett (LB)막과 이들의 캐스트막을 다공성막 필터 위에 제조하여 산소와 질소의 투과성을 비교 검토하였다. 양친성 고분자 폴리 (N-(2-(4-이미다졸일)에틸)말레이미드-alt-1-옥타데센) (IM-O)은 폴리 (무수말레산-alt-1-옥타데센)과 히스타민의 반응으로 합성되었다. IM-O 단분자층은 철(III) 이온을 갖는 하층액 위에서 매우 안정하였다. LB막의 분자 구조는 FT-IR을 통하여 결정하였으며, LB막내에 존재하는 금속 이온의 농도는 XPS 측정으로 분석하였다. LB막의 균일성과 안정성을 SEM 관찰을 통하여 간접적으로 평가하였다. 본 LB막과 캐스트막의 기체 선택성은 산소보다 질소가 약간 높게 나타났으며, 두 기체에 대하여 모두 고투과성을 나타냈다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.220-220
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• 1999

In plasma source ion implantation, the target is immersed in the plasma and repetitively biased by negative high voltage pulses to implant the extracted ions from plasma into the surface of the target material. In this way, the problems of line-of-sight implantation in ion-beam ion implantation technique can be effectively solved. In addition, the high dose rate and simplicity of the equipment enable the ion implantation a commercially affordable process. In this work, plasma source ion implantation technique was used to improve the wear resistance of Co-cemented WC. which has been extensively used for high speed tools. Nitrogen and carbon ions were implanted using the pulse bias of -602kV, 25 sec and at various implantation conditions. The implanted samples were examined using scanning Auger electron spectroscopy and XPS to investigate the depth distributions of implanted ions and to reveal the chemical state change due to the ion implantation. The implanted ions were found to have penetrated to the depth of 3000$\AA$. The wear resistance of the implanted samples was measured using pin-on-disc wear tester and the wear tracks were examined with alpha-step profilometer.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 E
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• pp.2253-2255
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• 1999

Plasma source ion implantation (PSII) is a non-line-of-sight technique for surface modification of materials which is effective for non-planar targets. Properties such as hardness, corrosion resistance, wear resistance and friction can be improved without affecting the bulk properties of the material. Type 304 austenitic stainless steel was treated by nitrogen plasma ion implantation at a target bias of -50kV. Surface properties, including microhardness and ion depth profile, were studied.

• Tribology and Lubricants
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• 제23권1호
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• pp.14-18
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• 2007

SCM415 alloy was implanted with nitrogen ions using plasma source ion implantation (PSII), at a dose range of $1{\times}10^{17}\;to\;6{\times}10^{17}N^{+}cm^{-2}$. Auger electron spectrometry (AES) was used to investigate the depth profile of the implanted layer. Friction and wear tests were carried out on a block-on-ring wear tester. Scanning electron microscopy (SEM) was used to observe the micro-morphology of the worn surface. The results revealed that after being implanted with nitrogen ions, the frictional coefficient of the surface layer decreased, and the wear resistance increased with the nitrogen dose. The tribological mechanism was mainly adhesive, and the adhesive wear tended to become weaker oxidative wear with the increase in the nitrogen dose. The effects were mainly attributed to the formation of a hard nitride precipitate and a supersaturated solid solution of nitrogen in the surface layer.