• 제목/요약/키워드: nitrogen implantation

검색결과 87건 처리시간 0.03초

플라즈마 이온주입에 의해 표면 개질한 초경공구의 가공특성 (Cutting Characteristics of Plasma Source Son Implanted Tungsten Carbide Tool)

  • 강성기;왕덕현;김원일
    • 한국정밀공학회지
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    • 제27권1호
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    • pp.33-40
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    • 2010
  • In this research, the effects for surface Improvement of plasma ion implanted carbide endmill tools were observed by measuring cutting forces and tools wear affecting surface roughness in high speed cutting. From the 2nd ion mass analysis, the oxidation layer was found to be built up by sputtering. The residual gas contamination of oxygen was found to be contained impurities in nitrogen gas. The plasma implanted ion was found to be spreaded, especially the nitrogen was implanted up to 150nm depth as impressed voltage and ion implanting time. It is analyzed as bring surface improvement by spreading deeply forming oxidation on surface. The factors in Analysis of Variance(ANOVA) about mutuality cause reference of cutting force. The cutting force Fx is affected by the interaction of spindle rpm and federate, the cutting force Fy is influenced by spindle rpm and time injected ion, and cutting force Fz is affected by the interaction of impressed voltage and feedrate. Also, it was found that the cutting forces of implanted tools become lower and the surface roughness is improved by the effect of nitrogen according to the implantation.

Glass strengthening and coloring using PIIID technology

  • Han, Seung-Hee;An, Se-Hoon;Lee, Geun-Hyuk;Jang, Seong-Woo;Whang, Se-Hoon;Yoon, Jung-Hyeon
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.178-178
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    • 2016
  • Every display is equipped with a cover glass to protect the underneath displaying devices from mechanical and environmental impact during its use. The strengthened glass such as Gorilla glass.$^{TM}$ has been exclusively adopted as a cover glass in many displays. Conventionally, the strengthened glass has been manufactured via ion-exchange process in wet salt bath at high temperature of around $500^{\circ}C$ for hours of treatment time. During ion-exchange process, Na ions with smaller diameter are substituted with larger-diameter K ions, resulting in high compressive stress in near-surface region and making the treated glass very resistant to scratch or impact during its use. In this study, PIIID (plasma immersion ion implantation and deposition) technique was used to implant metal ions into the glass surface for strengthening. In addition, due to the plasmonic effect of the implanted metal ions, the metal-ion implanted glass samples got colored. To implant metal ions, plasma immersion ion implantation technique combined with HiPIMS method was adopted. The HiPIMS pulse voltage of up to 1.4 kV was applied to the 3" magnetron sputtering targets (Cu, Ag, Au, Al). At the same time, the sample stage with glass samples was synchronously pulse-biased via -50 kV high voltage pulse modulator. The frequency and pulse width of 100 Hz and 15 usec, respectively, were used during metal ion implantation. In addition, nitrogen ions were implanted to study the strengthening effect of gas ion implantation. The mechanical and optical properties of implanted glass samples were investigated using micro-hardness tester and UV-Vis spectrometer. The implanted ion distribution and the chemical states along depth was studied with XPS (X-ray photo-electron spectroscopy). A cross-sectional TEM study was also conducted to investigate the nature of implanted metal ions. The ion-implanted glass samples showed increased hardness of ~1.5 times at short implantation times. However, with increasing the implantation time, the surface hardness was decreased due to the accumulation of implantation damage.

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Edge Termination을 위해 Tilt-Implantation을 이용한 SiC Trench Schottky Diode에 대한 연구 (A Study of SiC Trench Schottky Diode with Tilt-Implantation for Edge Termination)

  • 송길용;김광수
    • 전기전자학회논문지
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    • 제18권2호
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    • pp.214-219
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    • 2014
  • 본 논문에서는 실리콘 카바이드(silicon carbide)를 기반으로 한 tilt-implanted trench Schottky diode(TITSD)를 제안한다. 4H-SiC 트랜치 쇼트키 다이오드(trench Schottky diode)에 형성되는 트랜치 측면에 경사 이온주입(tilt-implantation)을 하여 소자가 역저지 상태(reverse blocking mode)로 동작 시 trench insulator가 모든 퍼텐셜(potential)을 포함하는 구조를 제안하고, 그 특성을 시뮬레이션을 통해 확인하였다. TITSD는 트랜치의 측면(sidewall)에 nitrogen을 $1{\times}10^{19}cm^{-3}$ 으로 도밍(doping) 하여 항복전압(breakdown voltage) 특성도 경사 이온주입을 하지 않았을 때와 같게 유지하면서 trench oxide insulator가 모든 퍼텐셜을 포함하도록 함으로써 termination area를 감소시켰다. 트랜치 깊이(trench depth)를 $11{\mu}m$로 깊게 하고 최적화된 폭(width)을 선택함으로써 2750V의 항복전압을 얻었고, 동급의 항복전압을 가진 가드링(guard ring) 구조보다 termination area를 38.7% 줄일 수 있다. 이에 대한 전기적 특성은 synopsys사의 TCAD simulation을 사용하여 분석하였으며, 그 결과를 기존의 구조와 비교하였다.

Nimonic 80A의 PIII에 미치는 질소이온주입량의 영향 (The Effects of the Incident Nitrogen Ion Dose on the Plasma Immersion Ion Implantation of Nimonic 80A)

  • 유용주;천희곤;김대일;차병철;구경완
    • 열처리공학회지
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    • 제18권6호
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    • pp.369-374
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    • 2005
  • Nitrogen ion implantation in Nimonic 80A using plasma immersion ion implantation (PIII) was investigated at a pulse voltage of -60 kV and ion dose of $3{\times}10^{17}{\sharp}/cm^2$, $6{\times}10^{17}{\sharp}/cm^2$, $12{\times}10^{17}{\sharp}/cm^2$. PIII is an effective technology to improve the surface hardness and wear resistance of materials. And also this technology is not limited by the shape and size of materials. PIII would be a promising technique in the future. Surface hardness and wear resistance of the $N^+$ ion implanted Nimonic 80A were increased with the increase in the incident ion dose. The surface hardness of the untreated Nimonic 80A is 420 Hv, the hardness of implanted Nimonic 80A is 1050 Hv at $N^+$ ion dose of $12{\times}10^{17}{\sharp}/cm^2$. The wear loss of the untreated is 82.5 mg, the wear loss of the implanted is 0.004g at $N^+$ ion dose of $12{\times}10^{17}{\sharp}/cm^2$. The $Cr_2N$ is detected on the surface of the implanted Nimonic 80A by XRD analysis.

질소이온 주입시킨 7050A1 합금의 표면 미세구조 변화의 분석 (Analyzing Surface Microstructure of 7050A1 Alloy Modified by $N^+ion$ Implantation)

  • 이창우;권숙인;한전건
    • 분석과학
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    • 제7권4호
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    • pp.527-540
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    • 1994
  • 본 연구는 질소이온 주입시킨 7050A1 합금의 표면 미세구조 변화에 대하여 살펴보았다. 이온 주입은 이온을 가속시켜서 물리적으로 모재의 표면에 주입시키는 표면처리의 한 방법으로서, 본 연구에서는 가속 에너지를 100KeV로 하고 전류밀도는 $23.1{\mu}A/cm^2$, 주입량은 $5{\times}10^{15}ions/cm^2$, $5{\times}10^{17}ions/cm^2$과, $8{\times}10^{17}ions/cm^2$로 질소이온을 주입하였다. 이온 주입층은 EPMA, AES, XPS, TEM 등으로 분석하였으며, 그 결과를 computer simulation을 통하여 비교하여 보았다. 질소이온 주입시킨 7050A1 합금은 극 표면에서부터 약 $4000{\AA}$ 사이에서 AlN이 Gaussian 분포를 지니고 있었으며, 일정 깊이에서 이온의 주입에 의해 충격을 받은 영역을 관찰할 수 있었고 이러한 표면의 변화들은 미소경도에 영향을 미치게 되어 저하중에서 경도값의 상승을 야기했다.

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The preparation of ultra hard nitrogenated DLC film by $N_2^+$ implantation

  • Olofinjana, A.O.;Chen, Z.;Bell, J.M.
    • 한국윤활학회:학술대회논문집
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    • 한국윤활학회 2002년도 proceedings of the second asia international conference on tribology
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    • pp.165-166
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    • 2002
  • Hydrogen free diamond like carbon (DLC) films were prepared on steel substrates by using a single ion beam in a configuration that allowed sputtering of a graphite target and at the same time allowed to impact the substrate at a grazing angle. The DLC films so prepared have improved properties with increased disorder and with modest hardness that is slightly higher than previously reported values. We have studied the effects of $N_2^+$ ions implantation on such films. It is found that the implantations of nitrogen ions into DLC films lead to chemical modifications that allowed N atoms to be incorporated into the carbon network to produce a nitrogenated DLC. Nano-indentation experiments indicated that the nitrogenated films have consistently higher hardnesses ranging from 30 to 45GPa, which represents a considerable increase in surface hardness, compared with non-nitrogenated precursor films. The investigations by XPS and Raman spectroscopy suggests that the $N_2^+$ implanted DLCs had undergone both chemical and structural modifications through the incorporation of N atoms and the increased ratio of $sp^3/sp^2$ type bonding. The observed high hardness was therefore attributable to these structural and chemical modifications. This result has implication for the preparation of super hard wear resistant films required for tribological functions in devices.

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질소 이온 주입시킨 7050Al합금의 표면 미세구조 변화와 저주기 피로거동 (The Surface Modification and Low Cycle Fatigue Behavior of N+ion Implantated 7050Al Alloy)

  • 이창우;권숙인
    • 열처리공학회지
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    • 제7권4호
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    • pp.307-317
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    • 1994
  • The surf ace microstructure modification by $N^+$ ion implantation into 7050Al alloy and its low cycle fatigue behavior were investigated. Ion implantation method is to physically implant accelerated ions to the surface of a substrate. High dose of nitrogen($5{\times}10^{17}ions/cm^2$) were implanted into 7050Al alloy using current density of accellerating voltage of 100KeV. The implanted layers were characterized by Electron Probe-Micro Analysis(EPMA), Auger Elecron Spectroscopy(AES), X-Ray Diffraction(XRD), X-Ray Photoelectron Spectroscopy(XPS), and Transmission Electron Microscopy(TEM). The experimental results were compared with computer simulation data. It was shown that AlN was formed to 4500 ${\AA}$ deep. The low cycle fatigue life of the $N^4$ion modified material was prolonged by about three times the unimplanted one. The improved low cycle fatigue life was attributed to the formation of AlN and the damaged region on the surface by $N^+$ ion implantation.

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Breeding of L(+)-Lactic Acid Producing Strain by Low-Energy Ion Implantation

  • Ge, Chun-Mei;Gu, Shao-Bin;Zhou, Xiu-Hong;Yao, Jian-Ming;Pan, Ren-Rui;Yu, Zeng-Liang
    • Journal of Microbiology and Biotechnology
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    • 제14권2호
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    • pp.363-366
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    • 2004
  • In order to obtain an industrial strain with higher L(+)-lactic acid yield, the wild type strain Rhizopus oryzae PW352 was mutated by means of Nitrogen ions implantation (l5 Kev, $7.8 \times 10^{14} - 2.08 \times 10^{15} ions/Cm^2$ and two mutants RE3303 and RF9052 were isolated. After 36 h shake-flask cultivation, the concentration of L(+)-lactic acid reached 131-136 g/l, the conversion rate of glucose was as high as 86%-90% and the productivity was 3.61 g/l.h. It was almost a 75% increase in lactic acid production compared with the wild type strain. Maximum fermentation temperature of RF9052 was increased to $45^{\circ}C$ from original $36^{\circ}C$. At the same time, the preferred range of fermentation temperature of RF9052 was broadened compared with PW352.

초경 엔드밀의 플라즈마 이온 주입과 저온 열처리를 통한 내마멸성 향상 (Enhancement of Wear Resistance by Low Heat Treatment and the Plasma Source Ion Implantation of Tungsten Carbide Tool)

  • 강성기;왕덕현;김원일
    • 한국생산제조학회지
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    • 제20권2호
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    • pp.162-168
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    • 2011
  • In this research, nitrogen plasma source ion implantation(PSII) of non-coated tungsten carbide endmill tools was conducted with low heat treatment for increasing wear resistance. After the low heat treatment of PSIIed tools to give a homogeneity of wear resistance, the surface modification of tools was analyzed by hardness test, surface roughness and cutting forces. As for the resultant cutting forces, low heat treatment in temperature of $400^{\circ}C$ and $500^{\circ}C$ is stable because of low cutting resistance. The 20-minutes heat treated tool at spindle speed 25000rpm has superiority of surface roughness, Ra of $0.420{\mu}m$ and was found to have good wear resistance. The higher hardness value was obtained by increasing temperature from $300^{\circ}C$ to $600^{\circ}C$ for PSIIed tools with low heat treatment. As the PSIIed tools under 10minutes at temperature of $600^{\circ}C$ have the highest hardness as Hv of 2349.8, It was analyzed that temperature processing give much influences on hardness.