• Title/Summary/Keyword: negative resistor

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A Versatile Design of Optronic Negative Resistance (호용성이 있는 광결합 부성저항회로의 설계)

  • 박성한
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.15 no.4
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    • pp.33-37
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    • 1978
  • A versatile negative resistance using one transistor, one photo-coupler and three resisters, which can be used as either a voltage controlled or current controlled negative resistance, is designed. The versatility is obtained by changing the transistor and one connection of the circuit. The negative resistance region is linear and its value can be varied by varying one of the three resistor values.

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A study on the manufacturing of super precision multilayer cermet thin film resistor (초정밀 다층 Cermet 박막저항체 제조에 관한 연구)

  • 허명수;최승우;천희곤;권식철;이건환;조동율
    • Journal of the Korean Vacuum Society
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    • v.6 no.1
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    • pp.77-84
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    • 1997
  • Super precision resistor was manufactured by controlling properly the thickness of $TaN_{0.1}$ (negative TCR) and Cr(positive TCR) deposited on cylindrical alumina substrate (diameter: 4 mm, length: 11 mm). Multilayer thin film resistor of $Ta_2O_5/TaN_{0.1}$/Cr/Alumina (substrate) was manufactured by depositing of $Ta_2N_5$ film on $TaN_{0.1}$ film to increase Rs to the level of 1;k{\Omega}/{\box}$ and to passivate the film. Super precision resistor with TCR of $20\pm5 ppm/^{\circ}C$ and Rs of $1\;k{\Omega}/{\box}$ was manufactured by depositing thin layers of about 10 nm $Ta_2O_5$, 100 nm $TaN_{0.1}$ and 50 nm Cr film under the properly controlled sputtering condition.

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New negative capacitance front-end for bioimpedance measurements (생체 임피던스 측정을 위한 새로운 네가티브 커패시턴스 프론트 엔드)

  • 권석영;김영필;황인덕
    • Proceedings of the IEEK Conference
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    • 2003.07c
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    • pp.2753-2756
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    • 2003
  • A convenient, tunable loop-gain negative impedance circuit that increases input impedance of a front-end in a bioimpedance measurement has been proposed. Since the proposed circuit comprises wide-band operational amplifiers, selecting operational amplifiers is easy, while an operational amplifier of proper bandwidth should be chosen to use conventional circuit. Also, since loop-gain can be controlled by a feedback resistor connected serially with a feedback capacitor, loop-gain is tunable with a potentiometer. The input impedance of the proposed circuit is two times larger than that of the conventional circuit. Furthermore, closed loop phase response of the proposed circuit is better than that of the conventional circuit or without a negative capacitance circuit. The implemeted, proposed circuit showed stable operation and a zero input capacitance.

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Broadband Noise Reduction of Smart Panels using Piezoelectric Shunt Circuits (압전션트 회로를 이용한 지능패널의 광대역 소음저감에 관한 연구)

  • 정영채;김재환;이중근;하성호
    • Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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    • 2003.11a
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    • pp.624-629
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    • 2003
  • In this paper, broadband shunt technique for increasing transmission loss is experimentally investigated. Piezoelectric shunt damping is studied using resonant shunt circuit and negative capacitor shunt circuit. A resonant shunt circuit is implemented by using a resistor and inductor. Negative Capacitor shunt damping is similar in nature to resonant shunt damping techniques, as a single piezoelectric material is used to dampen multi-mode. Performance of both methods is experimentally studied for noise reduction. This is based upon SAE J1400 test method and a transmission loss measurement system is provided for it. This paper will present the test setup fer transmission loss measurement and the tuning procedure of shunt circuits. Finally the results of sound transmission tests will be shown.

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A current-controlling transadmittance amplifier application to FDNR (전류-제어 트랜스어드미턴스 증폭기와 그것을 이용한 FDNR의 설계)

  • 박지만;정원섭
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.33A no.12
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    • pp.104-109
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    • 1996
  • A current-controlling transadmittance amplifier is proposed. It consists of a linear transadmittor and a current gain cell followed by three current mirrors. The proposed transadmittance amplifier is used to design a current-controlling frequency-dependent negative resistor (FDNR). Experimental results are presented to verify theoretical predictions. The results show close agreement between predicted behaviour and experimental performance.

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Sinusoidal Oscillator Using Planer SCR (Planer SCR에 의한 정자파 발진기)

  • 박병철
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.11 no.2
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    • pp.40-45
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    • 1974
  • It is indicated that in SCR the anode current can be controlled by ajusting the gate voltage when the magnitude of anode current lies in the range of 10-2 to 10-3 Amperes. This fact is applied to make a simple sinusoidal oscillator circuit which has the negative resistance characteristics in its gate circuit by inserting a proper resistor into its cathode circuit.

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A Study on a Chaotic Oscillator Circuit with CdS Cell (CdS 셀을 이용한 카오스 발진기 회로 연구)

  • 박민서;정동호;정경택
    • Proceedings of the IEEK Conference
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    • 2000.06e
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    • pp.73-76
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    • 2000
  • We study the Chua oscillator circuit by considering a negative resistor as a characteristic parameter which controlled by the CdS(Cadmium Sulphide) cell. This is a new way to observe several chaotic phenomena with the same initial condition continuously. Since we can control the internal resistance of the CdS cell by an additional circuit, our autonomous chaotic oscillator circuit makes it possible to measure the voltage value continuously and automatically.

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써미스터의 기초지식

  • 김석현
    • 전기의세계
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    • v.41 no.3
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    • pp.38-42
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    • 1992
  • 써미스터(THERMLISTOR)는 Thermally Sensitive Resistor의 약칭으로 온도변화에 대한 저항치의 변화가 극히 크게 변화하는 특징을 갖는 감온반도체이다. 이중에는 부특성 또는 NTC(Negative Temperature Coeffient) THERMISTOR와 정특성 또는 PTC(Positive Temperature Coeffient)THERMISTOR의 두종류와 NTC와 동일한 부의 온도계수이지만 어떤 온도영역에서 저항치가 급격히 감소하는 CTR로 분류한다. 이렇게 3가지 종류로 분류되는 THERMISTOR중 우리주변에서 가장 널리 보급되고 가정생활에서 실제로 흔히 볼수 있는 가전기기의 온도검출용 sensor로 많이 사용되고 있는 THERMISTOR SENSOR에 대해서만 기초지식을 알아보기로 하고 다음기회에는 응용기술에 대해서 알아보기로 하겠다.

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TCR Adjustment of $ RuO_2$ Thick Film Resistor by Semiconducting Oxides (반도성 산화물에 의한 $ RuO_2$ 후막저항체의 TCR조정)

  • Lee, Byung-Soo;Lee, Joon
    • Korean Journal of Materials Research
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    • v.2 no.1
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    • pp.58-64
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    • 1992
  • TCR modifying oxides which have negative TCR were added to the $\textrm{RuO}_2$ thick film resistors and how they affect the TCR and resistivity of the systems were investigated. Two types of resistor systems whose ratio of $\textrm{RuO}_2$ to glass were 20/80 and 12/88 were used as standard resistors. It was observed that the modifiers did not always lower the TCR of the resistors and the direction of the TCR change were different from system to system. It was confirmed, however, that the feasibility of optimization of TCR of the resistors. When more than two TCR modifiers were added simultaneously there was no interaction between them. The resultant TCR of the resistor wart just sum of the effects from individual modifier. It was found to be desirable that the amount of addition of the TCR modifiers should be less than 2 to 3 percent.

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A 6-16 GHz GaN Distributed Power Amplifier MMIC Using Self-bias

  • Park, Hongjong;Lee, Wonho;Jung, Joonho;Choi, Kwangseok;Kim, Jaeduk;Lee, Wangyong;Lee, Changhoon;Kwon, Youngwoo
    • Journal of electromagnetic engineering and science
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    • v.17 no.2
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    • pp.105-107
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    • 2017
  • The self-biasing circuit through a feedback resistor is applied to a gallium nitride (GaN) distributed power amplifier (PA) monolithic microwave circuit (MMIC). The self-biasing circuit is a useful scheme for biasing depletion-mode compound semiconductor devices with a negative gate bias voltage, and is widely used for common source amplifiers. However, the self-biasing circuit is rarely used for PAs, because the large DC power dissipation of the feedback resistor results in the degradation of output power and power efficiency. In this study, the feasibility of applying a self-biasing circuit through a feedback resistor to a GaN PA MMIC is examined by using the high operation voltage of GaN high-electron mobility transistors. The measured results of the proposed GaN PA are the average output power of 41.1 dBm and the average power added efficiency of 12.2% over the 6-16 GHz band.