• 반도체디스플레이기술학회지
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• 제8권3호
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• pp.25-30
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• 2009

In this study, we synthesized novel UV-curable binders and applied for negative photoresist of display device. First, we synthesized UV-curable binders by radical polymerization with a mixture of Styrene/Methyl methacrylate/Methacrylic acid/Glycidyl methacrylate/N-Cyclohexylmaleimide at a fixed composition. Following the first step, we prepared a negative photoresist mixture optimized with photo sensitive initiator and others for the litho test. And then, we studied resolution and film retention with molecular weight of each binders and numerical value of Alkaline Desolution Rate(ADR). As a result of the litho test, we found that if the novel polymers have same numerical value of ADR, the resolution decreased and the film retention increased with the increasing of molecular weight of photoresist binder.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.816-819
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• 2008

A negative photoresist formulation was developed utilizing synthesized UV monomers containing imide linkage, photoinitiator, UV oligomer, and alkali developable polymer matrix. It was found that via-holes with good resolution, high transmittance and thermal resistance could be obtained by photolithographic process utilizing the negative-type photoresist formulations.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1987년도 정기총회 및 창립40주년기념 학술대회 학회본부
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• pp.197-199
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• 1987

This paper is investigated on characteristics of photoresist using inorganic a-$Se_{75}Ge_{25}$. The sensitivity of negative photoresist showing insolubility against alkalie solution, with Ag-photodoped, is more prominent than that of positive photoresist used with only a-$Se_{75}Ge_{25}$. It is also showed that the contrast of negative photoresist, ${\gamma}=2.9$, is more prominent than that of positive photoresist, ${\gamma}=1.4$.

• Bulletin of the Korean Chemical Society
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• 제23권9호
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• pp.1351-1354
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• 2002

• 폴리머
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• 제31권5호
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• pp.374-378
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• 2007

Acrylamide(AM), diacetone acrylamide(DAAM) 및 acrylic acid(AAc)를 사용하여 수용성 삼원공중합체를 제조하고, 4-azidoaniline을 반응하여 azido기를 고분자 곁사슬에 도입한 일성분계 포토레지스트를 제조하였다. AM을 주성분으로 하고 DAAM을 공단량체로 사용한 공중합체를 합성하구 광가교제로 4,4'-diazidostilbene 2,2'-disulfuric acid sodium salt(DAS)를 혼합한 이성분계 포토레지스트를 제조하여 두 종류 포토레지스트의 감광특성을 비교하였다. 포토레지스트의 azido기 1 mol에 대한 감광특성은 고분자 곁사슬에 azido기를 가진 일성분계의 경우가 bis-azido기를 가진 이성분계보다 약 4배정도 우수한 감광성을 나타내었다. 직경 $110{\mu}m$ 크기의 원형패턴을 낮은 광세기에서 일성분계 포토레지스트를 사용하여 얻었으며, 노광부와 비노광부 계면에 잔존물이 없이 원형 패턴이 형성되어 블랙 매트릭스용 negative 포토레지스트로 활용이 기대된다.

• 전자공학회논문지A
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• 제31A권7호
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• pp.69-75
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• 1994

A very fine pattern formation process using double exposure is investigated, which can overcome the resolution limit of optical wafer stepper. The very fine pattern can be obtained by moving the edge profile of large pattern by means of moving the stepper stage. The simulation results show that the light transmittance decrease bellow 9%, and the contrast increase to 16.6% for the 0.3$\mu$m photoresist pattern exposeed by the double exposure using i-line wafer stepper. And the experimental results show that fine photoresist pattern as short as 0.2$\mu$m can be obtained without a loss of photoresist thickness. Also, it proves that the depth of focus for 0.3$\mu$m pattern is longer than $1.5\mu$m. And, the very fine negative photoresist pattern was formmed by using the double exposure technique and the image reversal process.

• Carbon letters
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• 제24권
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• pp.55-61
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• 2017

Carbon micropatterns (CMs) were fabricated from a negative-type SU-8 photoresist by proton ion beam lithography and pyrolysis. Well-defined negative-type SU-8 micropatterns were formed by proton ion beam lithography at the optimized fluence of $1{\times}10^{15}ions\;cm^{-2}$ and then pyrolyzed to form CMs. The crosslinked network structures formed by proton irradiation were converted to pseudo-graphitic structures by pyrolysis. The fabricated CMs showed a good electrical conductivity of $1.58{\times}10^2S\;cm^{-1}$ and a very low surface roughness.

• Journal of information and communication convergence engineering
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• 제3권4호
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• pp.191-194
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• 2005

SU-8 is a epoxy based photoresist designed for MEMS applications, where a thick, chemically and thermally stable image are desired. However SU-8 has proven to be very sensitive to variation in processing variables and hence difficult to use in the fabrication of useful structures. In this paper, negative SU-8 photoresist processed has been characterized in terms of delamination, based on a full factorial designed experiment. Employing the design of experiment (DOE), a process parameter is established, and analyzing of full factorial design is generated to investigate degree of delamination associated with three process parameters: post exposure bake (PEB) temperature, PEB time, and exposure energy. These results identify acceptable ranges of the three process variables to avoid delamination of SU-8 film, which in turn might lead to potential defects in MEMS device fabrication.

• Macromolecular Research
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• 제12권4호
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• pp.352-358
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• 2004

For their application as one-component photoresists, we prepared epoxy terpolymers containing oxime-urethane and benzophenone groups by the radical polymerization of glycidyl methacrylate (GMA), metha-cryloxyethyl benzophenoneoxime urethane (MBU), and N-(4-benzoyl)phenylmaleimide (BPMI). The terpolymer composition was optimized to provide the most photosensitive photoresist. The photo-decomposition reaction of the oxime-urethane groups in the terpolymer was monitored by UV absorption spectroscopy, and the photo-crosslinking reaction of the epoxy terpolymer was observed by measuring the normalized thickness. The photosensitivity of the epoxy terpolymer increased as the amount of BPMI and MBU units increased up to 16 and 24 mol%, respectively. Among the terpolymers we prepared, terpolymer T-II(contents of GMA, MBU, BPMI are 75, 19, 6.1 mole%, respectively) exhibited the highest photosensitivity ( $D_{c}$ $^{0.5}$ = 430 mJ/$\textrm{cm}^2$) and had a moderate contrast (${\gamma}$$^{p}$ = 1.23). Negative-tone micropatterns having a line width of ca. 10 ${\mu}{\textrm}{m}$ were obtained by developing the system with chloroform.m.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.1625-1628
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• 2006

Two different negative-type photosensitive polyimides were synthesized and characterized for an application as an interdielectric layer in TFTLCD array. In the case of photocurable polyimides, the photosensitive moiety, 2-HHSP, was synthesized through 3 step reaction, and then was incorporated into side chains of polyimide precursor by post reaction. Optimum compositions of negative-type photocurable polyimde were also formulated. For photopolymerizable polyimides, two novel UV monomers containing imide linkages were prepared. An aqueous alkaline developable polymer matrix was synthesized by free radical copolymerization. A negative photoresist formulation was developed utilizing synthesized UV monomers containing imide linkage, photoinitiator, UV oligomer, and alkali developable polymer matrix. It was found that viaholes with good resolution, high transmittance and thermal resistance could be obtained by photolithographic process utilizing the negative-type photoresist formulations.