• ETRI Journal
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• 제26권3호
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• pp.189-194
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• 2004

We demonstrate a high-speed recording based on field-induced manipulation in combination with an optical reading of recorded bits on Au cluster films using the atomic force microscope (AFM) and the near-field scanning optical microscope (NSOM). We reproduced 50 nm-sized mounds by applying short electrical pulses to conducting tips in a non-contact mode as a writing process. The recorded marks were then optically read using bent fiber probes in a transmission mode. A strong enhancement of light transmission is attributed to the local surface plasmon excitation on the protruded dots.

• 정보저장시스템학회논문집
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• 제4권1호
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• pp.1-5
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• 2008

Super-resolution near-field structure (super-RENS) technology and solid immersion lens (SIL) based near-field (NF) technology have been expected as promising approaches to increase data capacity or areal density of optical disc. Super-RENS technology has been studied until now using mainly numerical aperture (NA) of 0.85 far-field optical system and possibility of tangential data density increment have been presented. NF technology has been studied with NA over 1 and presented demonstration of removable performance. To achieve much higher density, approach to increase NA of super-RENS by NF technology (Near-Field Super-Resolution, NFSR) can be a candidate and we think this technology would be advantageous compared to wavelength reduction or much higher NA increment of NF technology or much smaller effective optical spot size reduction of far-field super-resolution technology. In this paper we present readout result of ROM media having monotone pits using NF optical system with wavelength of 405nm and NA of 1.84 surface type SIL. GeSbTe material was used for super resolution active layer and pit length is 37.5nm which is shorter than resolution limit 55nm. We present the feasibility of NFSR technology by confirming the CNR threshold according to readout power (Pr) and CNR 33dB over threshold Pr.

• 한국광학회:학술대회논문집
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• 한국광학회 2000년도 제11회 정기총회 및 00년 동계학술발표회 논문집
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• pp.168-169
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• 2000

We have tried to enhance the density of the near-field optical memory and to improve the recording/readout speed. The current optical memory has the limitation in both density and speed. This barrier due to the far-field nature can be overcome by the use of the near-field$^{(1)}$ . The optical data storage density can be increased by reducing the size of the nanometric aperture where the near-field is obtained. To fabricate the aperture in precise dimension, we applied the orientation-dependent / anisotropic etching property of crystal Si often employed in the field of MEMS$^{(2)}$ . And so we fabricated the 10$\times$10 aperture array. This array will be also the indispensable part for speeding up. One will see the possibility of the multi-tracking pickup in the phase changing type memory through this array$^{(3)}$ . This aperture array will be expected to write the bit-mark whose size is about 100nm. We will show the recent result obtained. (omitted)

• 정보저장시스템학회논문집
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• 제3권3호
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• pp.123-125
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• 2007

We report the readout stability improvement results of super-resolution near field structure (Super-RENS) writeonce read-many (WORM) disk at a blue laser optical system. (Laser wavelength 405nm, numerical aperture 0.85) By using diffusion barrier structure (GeSbTe sandwiched by GeN) and high transition temperature recording material ($BaTiO_3$), material diffusion of phase change layer and recording mark degradation were greatly improved during high power (Pr=2.0mW) readout process up to $1{\times}10^5$ times.