• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2003.10a
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• pp.58-58
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• 2003

Silver doped ZnO (SZO) films were prepared by rf magnetron sputtering on glass substrates with extraordinary designed ZnO target. With the doping source for target, use AgNO$_3$ powder on a various rate (0, 2, and 4 wt.%). We investigated dependence of coating parameter such as dopant content in target and substrate temperature in the SZO films. The SZO films have a preferred orientation in the (002) direction. As amounts of the Ag dopant in the target were increased, the crystallinity and the transmittance and optical band gap were decreased. And the substrate temperature were increased, the crystallinity and the transmittance were increased. But the crystallinity and the transmittance of SZO films were retrograde at 200$^{\circ}C$. Upside facts were related with composition. In addition, the Oxygen K-edge features of the SZO films were investigated by using near edge X-ray absorption fine structure (NEXAFS) spectroscopy. Changes of optical band gap of the SZO films were explained compared with XRD, XPS and NEXAFS spectra.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.202.2-202.2
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• 2014

We have studied the bonding structures of five membered aromatic ring heterocyclic molecules, such as furan, thiophene, and selenophene, adsorbed on the Si(100) surface at room temperature with density functional theory. Additionally, we have investigated the evolution upon annealing of thiophene and selenophene molecules on the Si(100) surface by the core-level photoemission spectroscopy and near-edge X-ray absorption fine structure (NEXAFS). The core-level-spectra measured at different temperatures are consistently interpreted in terms of various adsorption structures suggested by theoretical calculations. In this study, we found the most suitable structures by theoretical and experimental results considering room temperature and mild thermal annealing.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.158-158
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• 2012

A new kind of organic-inorganic hybrid polymer, poly(tetraphenyl)silole siloxane (PSS), was invented and synthesized for realization of its unique charge trap properties. The organic portions consisting of (tetraphenyl)silole rings are responsible for electron trapping owing to their low-lying LUMO, while the Si-O-Si inorganic linkages of high HOMO-LUMO gap provide the intrachain energy barrier for controlling electron transport. Such an alternation of the organic and inorganic moieties in a polymer may give an interesting quantum well electronic structure in a molecule. The PSS thin film was fabricated by spin-coating of the PSS solution in THF organic solvent onto Si-wafer substrates and curing. The electron trapping of the PSS thin films was confirmed by the capacitance-voltage (C-V) measurements performed within the metal-insulator-semiconductor (MIS) device structure. And the quantum well electronic structure of the PSS thin film, which was thought to be the origin of the electron trapping, was investigated by a combination of theoretical and experimental methods: density functional theory (DFT) calculations in Gaussian03 package and spectroscopic techniques such as near edge X-ray absorption fine structure spectroscopy (NEXAFS) and photoemission spectroscopy (PES). The electron trapping properties of the PSS thin film of quantum well structure are closely related to intra- and inter-polymer chain electron transports. Among them, the intra-chain electron transport was theoretically studied using the Atomistix Toolkit (ATK) software based on the non-equilibrium Green's function (NEGF) method in conjunction with the DFT.

• Journal of Surface Science and Engineering
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• v.45 no.1
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• pp.15-19
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• 2012

Tris(8-quinolinolato)aluminum(III); $Alq_3$ has been frequently used as an electron transporting layer in organic light-emitting diodes. Either Ba with a low work function or Au with a high work function was deposited on $Alq_3$ layer in vacuum. And then, the behaviors of electron transition at the $Alq_3$/Ba and $Alq_3$/Au interfaces were investigated by using the near edge x-ray absorption fine structure (NEXAFS) spectroscopy. In the each interface, the energy levels of unoccupied obitals were assigned as ${\pi}^*$(LUMO, LUMO+1, LUMO+2 and LUMO+3) and ${\sigma}^*$. And the relative intensities of these peaks were investigated. In an oxygen atom composing $Alq_3$ molecule, the relative intensities for a transition from K-edge to LUMO+2 were largely increased as Ba coverage (${\Theta}_{Ba}$, 2.7 eV) with a low work function was in-situ sequentially increased on $Alq_3$ layer. In contrast, the relative intensities for the LUMO+2 peak were reduced as Au coverage (${\Theta}_{Au}$, 5.1 eV) with a high work function were increased on $Alq_3$ layer. This means that the electron transition by photon in oxygen atom which consists in the unoccupied orbitals in $Alq_3$ molecule, largely depends on work function of a metal. Meanwhile, in the case of electron transition in a carbon atom, as ${\Theta}_{Ba}$ was increased on $Alq_3$, the relative intensity from K-edge to ${\pi}_1{^*}$ (LUMO and LUMO+1) was slightly decreased, and from K-edge to ${\pi}_2{^*}$ (LUMO+2 and LUMO+3) was somewhat increased. This rising of the energy state from ${\pi}_1{^*}$ to ${\pi}_2{^*}$ exhibits that electrons provided by Ba would contribute to the process of electron transition in the $Alq_3$/Ba interfaces. As shown in above observation, the analyses of NEXAFS spectra in each interface could be important as a basic data to understand the process of electron transition by photon in pure organic materials.