• The Journal of the Korea Contents Association
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• v.10 no.7
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• pp.40-48
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• 2010

Reflected-Ultraviolet photography is applied to the evidence of crime, Archaeology, and Dermatology. In the past, Ultraviolet photography was done with standard black-and-white film. Because emulsion of film is more sensitive to near UV light than CCD(Charge Coupled Device) or CMOS(Complementary Metal-Oxide-Semiconductor)of digital camera. In this research, we purpose to improve qulity of ultraviolet photographs and to find out the best alternative digital camera by utilizing a cunsumer digital camera. To achieve theses, we removed IR cutoff filter from digital camera. And by using modified UV pass filter, we verified the increase of image resolution of digital ultraviolet photographs. Also, we analyze reproducibility of digital ultraviolet photographs according to type, size, pixel of image sensor. Furthermore, this research resulted in the development of an practical digital camera system by utilizing a cunsumer digital camera. Eventually, it will contribute to practical use in the various field of digital ultraviolet photographs

• Proceedings of the Korean Vacuum Society Conference
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• 2006.08a
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• pp.134-134
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• 2006

• The Bulletin of The Korean Astronomical Society
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• v.36 no.2
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• pp.71.1-71.1
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• 2011

Significant discrepancies have been found between the dust masses of edge-on spiral galaxies derived from various tracers (optical/near-infrared, far-infrared/sub-millimeter observations, and the variation of dust attenuation with viewing angle). Here we report the first detection of a vertically extended far-ultraviolet (FUV) and near-UV (NUV) emission in an edge-on spiral galaxy NGC 891. The vertically extended emission is interpreted as the dust-scattered light due to a extraplanar dust layer in NGC 891 that contains about the same mass as the standard thin dust disk. This new dust component completely encloses the stellar disk and bulge, and solves the puzzle of dust mass.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.04a
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• pp.5-6
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• 2007

반투명 전도성 음극 (semi-transparent conducting cathode)인 Ba (x nm)/Au (20 nm)/ITO (100 nm)을 이용하여 전면발광 유기전계 발광 소자 (top-emitting organic light-emitting didodes, TEOLEDs)를 제작했다. Ba과 bis(8-quinolinolato)aluminum (III) ($Alq_3$) 계면의 전자구조는 엑스선 광전자 분광법 (X-ray photoelectron spectroscopy, XPS), 자외선 광전자 분광법 (ultraviolet photoelectron spectroscopy, UPS) 및 가까운 끝머리 엑스선 흡수 미세구조 (near-edge x-ray absorption fine structure, NEXAFS) 스펙트럼의 광 방출 특성을 통하여 조사되었다. $Alq_3$/Ba 계면 특성에 있어서 XPS와 NEXAFS 특성에 의하면, $Alq_3$ (10.0 nm) 위에 Ba이 연속적으로 증착됨에 따라 Ba으로부터 $Alq_3$로의 전자전달 (electron charge transfer) 특성은 꾸준희 증가된다. 그러나 Ba의 두께가 1.0 nm 이상 초과되면 Ba의 전자전달에 기인한 반응성때문에 $Alq_3$의 분자구조가 해리된다. 한편, 제작된 TEOLEDE의 전류-전압-휘도 곡선의 경우에서도 바륨의 증착 두께가 1.0 nm일 때 가장 우수한 구동특성을 나타냈다.

• Applied Science and Convergence Technology
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• v.25 no.6
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• pp.138-144
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• 2016

The discharge characteristics of pulse-driven coplanar micro barrier discharges for an ultraviolet (UV) light source using Ne-Xe mixture have been investigated using a two-dimensional fluid simulation at near-atmospheric pressure. The densities of electrons, the radiative excited states, the metastable excited states, and the power loss are investigated with the variations of gas pressure and the gap distance. With a fixed gap distance, the number of the radiative states $Xe^*(^3P_1)$ increases with the increasing driving voltage, but this number shows weak dependency on the gas when that pressure is over 400 Torr. However, the number of the radiative states increases with the increase of the gap distance at a fixed voltage, while the power loss decreases. Therefore, a long gap discharge has higher efficiency for UV generation than does a short gap discharge. A slight change in the electrode tilt angle enhances the number of radiative species 2 or 3 times with the same operation conditions. Therefore, the intensity and efficiency of the UV light source can be controlled independently by changing the gap distance and the electrode structure.

• The Journal of Advanced Prosthodontics
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• v.5 no.4
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• pp.464-470
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• 2013

PURPOSE. The aim of this Fourier transform infrared (FTIR) spectroscopic study was to measure the degree of conversion (DC) of dual-cured resin cements light-irradiated through zirconia ceramic disks with different thicknesses using various light-curing methods. MATERIALS AND METHODS. Zirconia ceramic disks (KT12) with three different thicknesses (1.0, 2.0, and 4.0 mm) were prepared. The light transmittance of the disks was measured using ultraviolet visible near-infrared spectroscopy. Four different light-curing protocols were used by combining two curing light modes (Elipar TriLight (standard mode) and bluephase G2 (high power mode)) with light-exposure times of 40 and 120 seconds. The DCs of the two dual-cured resin cements (Duo-Link and Panavia F2.0) light-irradiated through the disks was analyzed at three time intervals (3, 7, and 10 minutes) by FTIR spectroscopy. The data was analyzed using repeated measures ANOVA (${\alpha}$=.05).Two-way ANOVA and Tukey post hoc test were used to analyze the 10 minute DC results. RESULTS. The 1.0 mm thick disk exhibited low light transmittance (<25%), and the transmittance decreased considerably with increasing disk thickness. All groups exhibited significantly higher 10 minute DC values than the 3 or 7 minute values (P<.05), but some exceptions were observed in Duo-Link. Two-way ANOVA revealed that the influence of the zirconia disk thickness on the 10 minute DC was dependent on the light-curing methods (P<.001). This finding was still valid even at 4.0 mm thickness, where substantial light attenuation took place. CONCLUSION. The curing of the dual-cured resin cements was affected significantly by the light-curing technique, even though the additional chemical polymerization mechanism worked effectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.3
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• pp.266-274
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• 2023

Recently, sterilization technology has received increasing interest due to the COVID-19 pandemic and required safety precautions. Particularly, sterilization devices using near ultraviolet (UV) with a 405 nm wavelength are also drawing attention. It has a UV-C wavelength and other sterilization effects. Its blue-colored light on the boundary between UV and visible light is used as a light-emitting diode (LED) lamp for 405 nm sterilization, owing to its longer wavelengths than UV rays. However, the 405 nm wavelength contains blue light that can damage the eyes and skin during prolonged exposures and affect the emotional and biological parts of the body. Currently, 405 nm sterilization LED light registers are circulating in the market. However, they have not undergone safety tests for blue-light hazards. Thus, with the active distribution of sterilization LED lights, solid safety standards and management systems are essential to protect users from blue-light hazards. Accordingly, in this study, we conducted spectral radiance and spectral radiative luminance tests on 405 nm sterilization LED registers available in the market by the measurement criteria of IEC 62471. Safety standards must be established to secure users' safety against blue light hazards at a time when 405nm sterilization LED lights are actively distributed due to COVID-19.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.283-283
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• 2011

The n-doping effect by doping metal carbonate into an electron-injecting organic layer can improve the device performance by the balanced carrier injection because an electron ohmic contact between cathode and an electron-transporting layer, for example, a high current density, a high efficiency, a high luminance, and a low power consumption. In the study, first, we investigated an electron-ohmic property of electron-only device, which has a ITO/$Rb_2CO_3$-doped $C_{60}$/Al structure. Second, we examined the I-V-L characteristics of all-ohmic OLEDs, which are glass/ITO/$MoO_x$-doped NPB (25%, 5 nm)/NPB (63 nm)/$Alq_3$ (32 nm)/$Rb_2CO_3$-doped $C_{60}$(y%, 10 nm)/Al. The $MoO_x$doped NPB and $Rb_2CO_3$-doped fullerene layer were used as the hole-ohmic contact and electron-ohmic contact layer in all-ohmic OLEDs, respectively, Third, the electronic structure of the $Rb_2CO_3$-doped $C_{60}$-doped interfaces were investigated by analyzing photoemission properties, such as x-ray photoemission spectroscopy (XPS), Ultraviolet Photoemission spectroscopy (UPS), and Near-edge x-ray absorption fine structure (NEXAFS) spectroscopy, as a doping concentration at the interfaces of $Rb_2CO_3$-doped fullerene are changed. Finally, the correlation between the device performance in all ohmic devices and the interfacial property of the $Rb_2CO_3$-doped $C_{60}$ thin film was discussed with an energy band diagram.

• Current Photovoltaic Research
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• v.4 no.1
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• pp.25-29
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• 2016

$Eu^{3+}$-activated $MgMoO_4$ phosphor thin films were grown at $400^{\circ}C$ on quartz substrates by radio-frequency magnetron sputter deposition from a 15 mol% Eu-doped $MgMoO_4$ target. After the deposition, the phosphor thin films were annealed at several temperatures for 30 min in air. The influence of thermal annealing temperature on the structural and optical properties of $MgMoO_4:Eu^{3+}$ phosphor thin films was investigated by using X-ray diffraction (XRD), photoluminescence (PL), and ultraviolet-visible spectrophotometry. The transmittance, optical band gap, and intensities of the luminescence and excitation spectra of the thin films were found to depend on the thermal annealing temperature. The XRD patterns indicated that all the thin films had a monoclinic structure with a main (220) diffraction peak. The highest average transmittance of 91.3% in the wavelength range of 320~1100 nm was obtained for the phosphor thin film annealed at $800^{\circ}C$. At this annealing temperature the optical band gap energy was estimated as 4.83 eV. The emission and excitation spectra exhibited that the $MgMoO_4:Eu^{3+}$ phosphor thin films could be effectively excited by near ultraviolet (281 nm) light, and emitted the dominant 614 nm red light. The results show that increasing RTA temperature can enhance $Eu^{3+}$ emission and excitation intensity.

• Journal of the Korea Computer Industry Society
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• v.2 no.4
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• pp.565-572
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• 2001

At the most recent years, laser medical instruments, laser applications and laser nuclear fusion need strong visible light and ultraviolet rays. Nonlinear optical devices, such as harmonic generators and parametric oscillators, provide a means of extending the frequency range of available laser sources. Frequency conversion is a useful technique for extending the utility of high-power lasers. It utilizes the nonlinear optical response of an optical medium in intense radiation fields to generate new frequencies. These progresses have been used to generate high-power radiation in all spectral regions, from the ultraviolet to the far infrared. Optical parametric oscillators and amplifiers generate two waves of lower frequency They are capable of generating a range of wavelengths from a single frequency source, in some cases spanning the entire visible and near infrared regions. Consequently, in order to obtain the green light, the pulsed Nd:YAG laser using multiple-mesh PFN(Pulsed Forming Network) method with Nonlinear optical device was adopted. We compared the current pulseshapes with the laser output energy, and conversion efficiency.