• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.266.2-266.2
• /
• 2016

최근 디스플레이 산업의 확대에 따라 투명 전도 산화물(Transparent Conducting Oxides:TCOs)의 수요가 급증하고 있다. 이 중 ZnO는 wide bandgap (3.37eV)와 large exciton binding energy (60meV)의 값을 가져 차세대 투명 전도 산화물, LED와 LD 등의 소자 소재로 각광받고 있다. ZnO는 electron을 내어놓는 native defect 때문에 기본적으로 n-type 물성을 띈다. 그래서 dopant를 이용해 p-type ZnO를 제작할 때 native defect를 줄이는 것이 중요한 요점이 된다. 이 때 buffer layer를 사용하여 native defect를 줄이는 방법이 사용되고 있다. 본연구에서는 RF-magnetron sputtering법을 이용하여 c-plane sapphire 기판 위에 다양한 조건의 ZnO buffer layer를 증착하고, 그 위에 ZnO:(Al,P) co-doping한 APZO를 증착하였다. ZnO buffer layer 증착조건의 변수는 증착온도와 Ar:O2의 비율을 변수로 두었다. 이러한 박막을 FE-SEM, XRD, Hall effect measurement, AFM을 통하여 미세구조와 물성을 관찰하였다. 이 때 APZO보다 낮은 증착온도에서 ZnO buffer layer가 증착되면 APZO를 증착하는 동안 chamber 내부에서 열처리하는 효과를 얻게 되고, UHV(Ultra High Vaccum)에서 열처리 될 때 ZnO buffer layer의 mophology와 결정성이 변하게 되는 모습을 관찰아혔다. 또한 본 실험을 통해 ZnO buffer layer의 증착 온도가 APZO의 증착온도보다 높을 때 제어 가능한 실험이 됨을 확인 할 수 있었다.

• Journal of Chest Surgery
• /
• v.28 no.9
• /
• pp.822-828
• /
• 1995

This paper reports 15 native valve endocarditis cases had surgical operation in the past 10 years at the department of Cardiovascular and Thoracic Surgery, Chonbuk National University Hospital. In this study, 10 cases out of 15 were in class I or II by the New York Heart Association functional classification. None of the cases had a history of taking addictive drugs. Five cases were congenital heart disease, three cases were rheumatic heart disease and two cases were degenerative heart disease. Thus 10 cases had the underlying disease. All cases had antibiotics treatment for 3 to 6 weeks before operation. In the culture test, only four cases were positive in the blood culture and one case was positive in the excised valve culture. Organisms on blood and valve culture were Streptococcus epidermis, Streptococcus viridans, Staphylococcus aureus and Staphylococcus epidermidis. In the 10 cases without ventricular septal defect, the aortic valve was involved in four, mitral in four, both in two and involved valves in the 5 cases with ventricular septal defect were tricuspid in three, pulmonic in two. Eight cases had operation because they showed moderate congestive heart failure due to valvular insufficiency and vegetation with or without embolism. Seven cases had operation because they showed persistent or progressive congestive heart failure and/or uncontrolled infection. Five cases with ventricular septal defect underwent the closure of ventricular septal defect, vegetectomy and leaflet excision of the affected valves without valve replacement. In the cases without ventricular septal defect, the affected valves were replaced with St. Jude mechanical prosthesis. Postoperative complications were recurrent endocarditis in two, embolism in one, allergic vasculitis in two, spleen rupture in one and postpericardiotomy syndrome in one. At the first postoperative day, one case died of cerebral embolism. At the 11th postoperative month, one case died of recurrent endocarditis and paravalvular leakage in spite of a couple of aortic valve replacement. In the survived cases[13 cases in this study , all cases but one became class I or II by the New York Heart Association functional classification.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.11a
• /
• pp.81-82
• /
• 2007

The stochiometric mix of evaporating materials for the $CdGa_2Se_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CdGa_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $630^{\circ}C\;and\;420^{\circ}C$, respectively. After the as-grown single crystal $CdGa_2Se_4$ thin films were annealed in Cd-, Se-, and Ga -atmospheres, the origin of point defects of single crystal $CdGa_2Se_4$ thin films has been investigated by PL at 10 K. The native defects of $V_{Cd},\;V_{Se},\;Cd_{int},\;and\;Se_{int}$ obtained by PL measurements were classified as donors or acceptors. And we concluded that the heat-treatment in the Cd-atmosphere converted single crystal $CdGa_2Se_4$ thin films to an optical p-type. Also, we confirmed that Ga in $CdGa_2Se_4$/GaAs did not form the native defects because Ga in single crystal $CdGa_2Se_4$ thin films existed in the form of stable bonds.

• Korean Journal of Veterinary Research
• /
• v.54 no.4
• /
• pp.253-256
• /
• 2014

In this study, we describe a case of epitheliogenesis imperfecta (EI) observed in the fetus of Korean native cattle. The fetus had multifocal areas of skin defect, especially on the distal portions of the four limbs, and the affected areas were bright-red and glistening. Histopathologically, these areas were characterized by complete absence of squamous epithelium, infiltration of inflammatory cells into the dermis, atrophy of hair follicles, sebaceous and sweat glands. To the best of our knowledge, this is the first report of epitheliogenesis imperfecta in Korean native cattle.

• Journal of Veterinary Clinics
• /
• v.24 no.2
• /
• pp.288-291
• /
• 2007

Hypospadias is a malformation in which the urethra open on the ventral side of the penis and its frequency is about from 0.3% to 0.5% male birth in human. It is considered a disorder both genetic and environmental factors involves in pathogenesis. A KNC(Korean native calf) showing symptoms of fusion defect of the male ventral urethra, penile defect, bifid scrotum and low body weigh was born. To prevent an ascending urinary tract infection, dermatitis and loss of hair, surgical operation was performed to make a genitals like a female. After the operation, the KNC got a regenerative hair and normal urination. However the KNC became anorexia, loss in weight and weak. Seventy days after birth, the KNC died. The view of autopsy was a yellowish hepatomegaly, hydronephrosis, closed ureter and complex disorder in interanl organ. The symptoms of hepatomegaly and hydronephrosis could be due to a fluid therapy as a consequence of ureter obstruction. The normal urination of the KNC before it got sick, suggested that ureter obstruction in the case of this KNC was formed at its postnatal growth stage.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07a
• /
• pp.257-265
• /
• 2002

A stoichiometric mixture of evaporating materials for AgInS$_2$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, AgInS$_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy(HWE) system. The source and substrate temperatures were 680 $^{\circ}C$ and 410 $^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of AgInS$_2$ single crystal thin films measured from Hall effect by van der Pauw method are 9.35${\times}$10$\^$16/ cm$\^$-3/ and 294 $\textrm{cm}^2$/V$.$s at 293 K, respectively. From the optical absorption measurement, the temperature dependence of the energy band gap on AgInS$_2$ single crystal thin films was found to be E$\_$g/(T) : 2.1365 eV - (9.89 ${\times}$ 10$\^$-3/ eV) T$^2$/(2930 + T). After the as-grown AgInS$_2$ single crystal thin films was annealed in Ag-, S-, and In-atmospheres, the origin of point defects of AgInS$_2$ single crystal thin films has been investigated by using the photoluminescence(PL) at 10 K. The native defects of V$\_$AG/, V$\_$S/, Ag$\_$int/, and S$\_$int/ obtained from PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the S-atmosphere converted AgInS$_2$ single crystal thin films to an optical p-type. Also, we confirmed that In in AgInS$_2$/GaAs did not form the native defects because In in AgInS$_2$ single crystal thin films did exist in the form of stable bonds.

• Analytical Science and Technology
• /
• v.5 no.2
• /
• pp.213-216
• /
• 1992

Semiinsulating GaAs crystals employing LPLEC technique should be grown from the Ga-rich melt due to a very low incorporation of unintentional impurities such as carbon (<$10^{15}cm^{-3}$). High resisitivity of this material can be derived from the balanced compensation among not only EL2 deep donors and carbon acceptors but also H1 double charge native acceptors(Ev + 77meV, Ev + 200 meV) and H2 native acceptors(Ev + 68 meV). Considering of the complicated compensation mechanism using statistical calculation of the electron occupancy of each level, SI GaAs crystal with low impurity contents(<$10^{15}cm^{-3}$) can be successfully obtained by maintaining the melt composition around 0.45 As mole fraction.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.06a
• /
• pp.152-153
• /
• 2007

$CuInSe_2$ single crystal thin film was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. After the as-grown $CuInSe_2$ single crystal thin films was annealed in Cu-, Se-, and In-atmospheres, the origin of point defects of $CuInSe_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{Cu}$, $V_{Se}$, $Cu_{lnt}$, and $Se_{lnt}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Cu-atmosphere converted $CuInSe_2$ single crystal thin films to an optical n-type. Also, we confirmed that In in $CuInSe_2$/GaAs did not form the native defects because In in $CuInSe_2$ single crystal thin films existed in the form of stable bonds.

• Journal of the Korean Ceramic Society
• /
• v.37 no.7
• /
• pp.726-729
• /
• 2000

The entitled report revealed that ZnO phosphor samples treated at different temperatures under a given reduction atmosphere show the radiation brightness increase with increase of temperature up to about 900$^{\circ}C$ but become decreasing beyond the temperature. The brightness deterioration with curing temperature at higher temperatures was explained by the decrease of excess zinc ions resulted from their evaporation. The comments will open possibility for different discussions on the experimental result by introducing numerical relationships between the concentration of the native defects and the curing condition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.11a
• /
• pp.141-142
• /
• 2008

Single crystal $ZnIn_2S_4$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at $450^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $ZnIn_2S_4$ source at $610^{\circ}C$. The temperature dependence of the energy band gap of the $ZnIn_2S_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g$(T) = 2.9514eV - ($7.24\times10^{-4}$ eV/K)$T^2$/(T + 489 K). After the as-grown $ZnIn_2S_4$ single crystal thin films was annealed in Zn-, S-, and In-atmospheres, the origin of point defects of $ZnIn_2S_4$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{Zn}$, $V_s$, $Zn_{int}$, and $S_{int}$, obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the S-atmosphere converted $ZnIn_2S_4$ single crystal thin films to an optical p-type. Also, we confirmed that In in $ZnIn_2S_4$/GaAs did not form the native defects because In in $ZnIn_2S_4$ single crystal thin films existed in the form of stable bonds.