• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.55-55
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• 2015

Today, engineers are facing new set of challenges that are quite different from the conventional ones. Information technologies are rapidly commoditizing while the paths beyond the current roadmaps became uncertain as various technologies have been pushed to their limits. Along with these changes in IT ecosystems, grand challenges such as global security, health, sustainability, and energy increasingly require trans-disciplinary solutions that go beyond the traditional arenas in STEM (Science, Technology, Engineering and Mathematics). Addressing these needs is shifting engineering education and research to a new paradigm where the emphasis is placed on the consilience for holistic and system level understanding and the convergence of technology with AHSD (arts, humanities, social science, and design). At the center of this evolutionary convergence, nanotechnologies are enabling novel functionalities such as bio-compatibility, flexibility, low power, and sustainability while on a mission to meet scalability and low cost for smart electronics, u-health, sensing networks, and self-sustainable energy systems. This talk introduces the efforts of convergence based on the emerging nano technology tool sets in the newly launched School of Integrated Technology and the Yonsei Institute of Convergence Technology at Yonsei International Campus. While the conventional devices have largely depended upon the inherent material properties, the newer devices are enabled by nanoscale dimensions and structures in increasingly standardized and scalable fabrication platform. Localized surface plasmon resonance in 0 dimensional nano particles and structures leads to subwavelength confinement and enhanced near-field interactions enabling novel field of metal photonics for sensing and integrated photonic applications [1,2]. Unique properties offered by 1 dimensional nanowires and 2 dimensional materials and structures can enable novel electronic, photonic, nano-bio, and biomimetic applications [3-5]. These novel functionalities offered by the emerging nanotechnologies are continuously finding pathways to be part of smart systems to improve the overall quality of life.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.244.1-244.1
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• 2015

The Ag Nanowire is one of the materials that are widely studied as alternatives to ITO and is available for large area, low cost process and the flexible transparent electrode. However, Ag nanowire can have the problem of a lack of stability at high temperatures, making this impossible to form a film. Using a structure of ITO/AgNW/ITO in photodetector device, we improved the properties of the ITO in the IR region and improved the thermal stability of the AgNW. The structure of ITO/AgNW/ITO has a high transmittance value of 89% at a wavelength of 900 nm and provide a good electrical property. The AgNWs embedded ITO film has a high transmittance, this is because of the light scattering from the AgNW. The thermal stability of the developed ITO/AgNWs/ITO films were investigated and found AgNWs embedded ITO films posses considerable high stability compared to the solo AgNWs on the Si surface. The ITO/AgNWs/ITO device showed a improved photo-response ratio compared to those of the conventional TC device in IR region. This is attributed to the high transmittance and low sheet resistance. We suggest an effective design scheme for IR-sensitive photodetection by using an AgNW embedded ITO.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 추계학술발표대회
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• pp.23.1-23.1
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• 2009

ZnO is of great interest for various technological applications ranging from optoelectronics to chemical sensors because of its superior emission, electronic, and chemical properties. In addition, vertically well-aligned ZnO nanorods on large areas with good optical and structural properties are of special interest for the fabrication of electronic and optical nanodevices. To date, several approaches have been proposed for the growth of one-dimensional (1D) ZnO nanostructunres. Several groups have been reported the MOCVD growth of ZnO nanorods with no metal catalysts at $400^{\circ}C$, and fabricated a well-aligned ZnO nanorod array on a PLD prepared ZnO film by using a catalyst-free method. It has been suggested that the synthesis of ZnO nanowires using a template-less/surfactant-free aqueous method. However, despite being a well-established and cost-effective method of thin film deposition, the use of magnetrons puttering to grow ZnO nanorods has not been reported yet. Additionally,magnetron sputtering has the dvantage of producing highly oriented ZnO film sat a relatively low process temperature. Currently, more effort has been concentrated on the synthesis of 1D ZnO nanostructures doped with various metal elements (Al, In, Ga, etc.) to obtain nanostructures with high quality,improved emission properties, and high conductance in functional oxide semiconductors. Among these dopants, Ga-doped ZnO has demonstrated substantial advantages over Al-doped ZnO, including greater resistant to oxidation. Since the covalent bond length of Ga-O ($1.92\;{\AA}$) is nearly equal to that of Zn-O ($1.97\;{\AA}$), high electron mobility and low electrical resistivity are also expected in the Ga-doped ZnO. In this article, we report the successful growth of Ga-doped ZnO nanorods on c-Sapphire substrate without metal catalysts by magnetrons puttering and our investigations of their structural, optical, and field emission properties.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.440-440
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• 2009

Semiconductor nanowires offer exciting possibilities as components of solar cells and have already found applications as active elements in organic, dye-sensitized, quantum-dot sensitized, liquid-junction, and inorganic solid-state devices. Among many semiconductors, silicon is by far the dominant material used for worldwide photovoltaic energy conversion and solar cell manufacture. For silicon wire to be used for solar device, well aligned wire arrays need to be fabricated vertically or horizontally. Macroscopic silicon wire arrays suitable for photovoltaic applications have been commonly grown by the vapor-liquid-solid (VLS) process using metal catalysts such as Au, Ni, Pt, Cu. In the case, the impurity issues inside wire originated from metal catalyst are inevitable, leading to lowering the efficiency of solar cell. To escape from the problem, the wires of purity of wafer are the best for high efficiency of photovoltaic device. The fabrication of wire arrays by the electrochemical etching of silicon wafer with photolithography can solve the contamination of metal catalyst. In this presentation, we introduce silicon wire arrays by electrochemical etching method and then fabrication methods of radial p-n junction wire array solar cell and the various merits compared with conventional silicon solar cells.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.433-433
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• 2009

ZnO-based materials have been extensively studied for optoelectronic applications due to their superiors physical properties such as wide direct bandgap (~3.37 eV), large exciton binding energy (~60 meV), high transparency in the visible region, and low cost. Especially, one-dimensional (1D) ZnO nanostructures have attracted considerable attention owing to quantum confinement effect and high crystalline quality. Additionally, various nanostructures of ZnO such as nanorods, nanowires, nanoflower, and nanotubes have stimulated the interests because of their semiconducting. and piezoelectric properties. Among them, vertically aligned ZnO nanorods can bring the improved performance in various promising photoelectric fields including piezo-nanogenerators, UV lasers, dye sensitized solar cells, and photo-catalysis. In this work, we studied the effect of the annealing temperature of homo seed layers on the formation of ZnO nanorods grown by hydrothermal method. The effect of annealing temperature of seed layer on the length and orientation of the nanorods was investigated scanning electron microscopy investigation. Transmission electron microscopy and X-ray diffraction measurement were performed to understand the effect of annealing temperatures of seed layers on the formation of nanorods. Moreover, the optical properties of the seed layers and the nanorods were studied by room temperature photoluminescence.

• 한국재료학회지
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• 제20권4호
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• pp.199-203
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• 2010

Hybridization of semiconductor materials with carbon nanotubes (CNTs) is a recent field of interest in which new nanodevice fabrication and applications are expected. In this work, nanowire type GaAs structures are synthesized on porous single-wall carbon nanotubes (SWCNTs) as templates using the molecular beam epitaxy (MBE) technique. The field emission properties of the as-synthesized products were investigated to suggest their potential applications as cold electron sources, as well. The SWCNT template was synthesized by the arc-discharge method. SWCNT samples were heat-treated at $400^{\circ}C$ under an $N_2/O_2$ atmosphere to remove amorphous carbon. After heat treatment, GaAs was grown on the SWCNT template. The growth conditions of the GaAs in the MBE system were set by changing the growth temperatures from $400^{\circ}C$ to $600^{\circ}C$. The morphology of the GaAs synthesized on the SWCNTs strongly depends on the substrate temperature. Namely, nano-crystalline beads of GaAs are formed on the CNTs under $500^{\circ}C$, while nanowire structures begin to form on the beads above $600^{\circ}C$. The crystal qualities of GaAs and SWCNT were examined by X-ray diffraction and Raman spectra. The field emission properties of the synthesized GaAs nanowires were also investigated and a low turn-on field of $2.0\;V/{\mu}m$ was achieved. But, the turn-on field was increased in the second and third measurements. It is thought that arsenic atoms were evaporated during the measurement of the field emission.

• 한국재료학회지
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• 제20권11호
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• pp.623-627
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• 2010

Semiconducting metal oxides have been frequently used as gas sensing materials. While zinc oxide is a popular material for such applications, structures such as nanowires, nanorods and nanotubes, due to their large surface area, are natural candidates for use as gas sensors of higher sensitivity. The compound ZnO has been studied, due to its chemical and thermal stability, for use as an n-type semiconducting gas sensor. ZnO has a large exciton binding energy and a large bandgap energy at room temperature. Also, ZnO is sensitive to toxic and combustible gases. The NO gas properties of zinc oxide-single wall carbon nanotube (ZnO-SWCNT) composites were investigated. Fabrication includes the deposition of porous SWCNTs on thermally oxidized $SiO_2$ substrates followed by sputter deposition of Zn and thermal oxidation at $400^{\circ}C$ in oxygen. The Zn films were controlled to 50 nm thicknesses. The effects of microstructure and gas sensing properties were studied for process optimization through comparison of ZnO-SWCNT composites with ZnO film. The basic sensor response behavior to 10 ppm NO gas were checked at different operation temperatures in the range of $150-300^{\circ}C$. The highest sensor responses were observed at $300^{\circ}C$ in ZnO film and $250^{\circ}C$ in ZnO-SWCNT composites. The ZnO-SWCNT composite sensor showed a sensor response (~1300%) five times higher than that of pure ZnO thin film sensors at an operation temperature of $250^{\circ}C$.

• 대한기계학회논문집B
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• 제39권6호
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• pp.541-548
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• 2015

본 논문에서는 순차적 화학기상증착법에 기반하여 다양한 구조적 특성을 갖는 산화아연 나노구조체를 탄소나노튜브 상에 3 차원 혼성구조로 형성하는 공정을 개발하고 그 형성 메커니즘을 논한다. 이어서 나노와이어, 나노로드, 나노플레이트, 다결정 나노박막 등 다양한 형상의 산화아연 나노구조를 온도, 압력, 개스유량 등 주요 파라미터들의 조절을 통해 형성할 수 있음을 보이며, 이의 형성 원리에 대해 기본적인 형성 메커니즘과 연계하여 고찰한다. 본 연구 결과를 통해, 압전 및 광전 에너지변환 특성 등 풍부한 기능성을 보유하되 다소 높은 전기저항을 갖는 산화아연 나노구조체를 다양한 포맷으로 양전도성의 탄소나노튜브와 혼성화 함으로써, 각각의 포맷 별로 특화된 보다 폭넓은 응용 분야로의 활용을 구현해 나갈 수 있을 것이다.

• 대한기계학회논문집B
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• 제40권9호
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• pp.621-627
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• 2016

본 연구에서는 실험적 데이터를 근간으로 박막재료의 스펙트럼(spectrum) 분포 별 포논-표면 산란율을 직접 계산할 수 있는 모델을 제시했다. 실험 측정결과인 포논 평균자유행로(mean free path, MFP) 스펙트럼 분포 별 열전달 기여도로부터 스펙트럼 의존적 포논-표면 산란율을 직접 도출하는 모델을 개발했고, 이 모델을 아직 실험적 방법으로 포논-표면 산란율을 측정하지 못한 $Si_{0.9}-Ge_{0.1}$ 나노선(Nanowire, NW)에 적용하여, $Si_{0.9}-Ge_{0.1}$ NW 내 포논 MFP 스펙트럼 분포를 구하고, 주파수에 따른 포논 전달특성을 살폈다. 이를 바탕으로 $Si_{0.9}-Ge_{0.1}$ NW 단위길이당 포논-표면 산란율을 제시하여, 가로갈래 포논 주파수 의존성을 살폈다. 본 연구에서 제시한 모델은 향후 나노재료의 공학적 응용을 위한 나노구조물 열전달 해석모델 개발 및 나노재료 열전달 특성 조정(tailoring)을 위한 나노재료 최적설계에 활용될 수 있다.

• 한국결정성장학회지
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• 제16권4호
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• pp.166-171
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• 2006

층상 구조의 유기-무기 복합 소재 $Cu_2(OH)_3(CH_3COO){\cdot}H_2O$에 마이크로파를 조사하면서 $Cu_2O$와 Cu를 합성하였다. 에틸렌 글리콜에서는 $Cu_2(OH)_3(CH_3COO){\cdot}H_2O$이 환원이 되어서 Cu금속이 형성되는 반면에, 수용액에 글루코오스를 넣으면$Cu_2(OH)_3(CH_3COO){\cdot}H_2O$이 환원이 되어 $Cu_2O$가 형성되었다. 마이크로파 조사시간과 글루코오스의 농도가 $Cu_2O$의 입자의 생성과 성장에 미치는 영향을 확인하였다. 마이크로파의 조사시간이 길어질수록 $Cu_2O$의 입자는 수 ${\mu}m$의 구형에서 40nm의 지름을 가진 나노 선으로 변함을 확인하였다.