• Applied Microscopy
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• v.41 no.2
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• pp.89-98
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• 2011

Atom Probe Tomography (APT) can provide 3-dimensional information such as position and chemical composition with atomic resolution. Despite the ability of this technique, APT could not be applied for poor conductive materials such as semiconductor. Recently APT has dramatically developed by applying the laser pulsing and combining with Focused Ion Beam (FIB). The invention and combination of these techniques make possible site-specific sample preparation and permit the investigation of various materials including insulators. In this paper, we introduced the recently achieved state of the art applications of APT focusing on Si based FET devices, LED devices, low dimensional materials.

• Applied Science and Convergence Technology
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• v.23 no.2
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• pp.61-71
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• 2014

A field-effect transistor (FET) is one of the most commonly used semiconductor devices. Recently, increasing interest has been given to FET-based biosensors owing totheir outstanding benefits, which are likely to include a greater signal-to-noise ratio (SNR), fast measurement capabilities, and compact or portable instrumentation. Thus far, a number of FET-based biosensors have been developed to study biomolecular interactions, which are the key drivers of biological responses in in vitro or in vivo systems. In this review, the detection principles and characteristics of FET devices are described. In addition, biological applications of FET-type biosensors and the Debye length limitation are discussed.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.487-487
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• 2013

According to shrinkage of transistor, interface traps have been recognized as a major factor which limits the process development in manufacturing industry. The traps occur through spontaneous generation process, and spread into the forbidden band. There is a large change of current though a few traps are existed at the Si-SiO2 interface. Moreover, the increased temperature largely affects to the leakage current due to the interface trap. For this reason, we made an effort to find out the relationship between temperature and interface trap. The subthreshold swing (SS) was investigated to confirm the correlation. The simulated results show that the sphere of influence of trap is enlarged according to increase in temperature. To investigate the relationship between thermal energy and surface potential, we extracted the average surface potential and thermal energy (kT) according to the temperature. Despite an error rate of 6.5%, change rates of both thermal energy and average surface potential resemble each other in many ways. This allows that SS is affected by the trap within the range of the thermal energy from the surface energy.