• Applied Chemistry for Engineering
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• v.20 no.6
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• pp.586-592
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• 2009

The preparation of structures with nanosized arrays allows mimicking many different morphologies that exist in nature. In addition, polymer is considered as a material that can be easily applicable to the fabrication of nanostructures and can effectively exhibit nanosize effects since material, synthesis and processing cost is low, and many of polymer structures are well studied. Porous alumina template prepared by anodization of aluminum among nanofabrication methods is the one of promising routes that cost-effectively provides very regularly arrayed nanostructures. In this review, we describe the fabrication of the nanotemplate and template-based polymer nanostructures and their applications.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.24.2-24.2
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• 2009

Nanostuctures such as nanodot and nanowire have been extensively studied as building blocks for nanoscale devices. However, the direct growth of the nanostuctures at the desired position is one of the most important requirements for realization of the practical devices with high integrity. Self-assembled nanotemplate is one of viable methods to produce highly-ordered nanostructures because it exhibits the highly ordered nanometer-sized pattern without resorting to lithography techniques. And selective epitaxial growth (SEG) can be a proper method for nanostructure fabrication because selective growth on the patterned openings obtained from nanotemplate can be a proper direction to achieve high level of control and reproducibility of nanostructucture fabrication. Especially, SiGe has led to the development of semiconductor devices in which the band structure is varied by the composition and strain distribution, and nanostructures of SiGe has represented new class of devices such nanowire metal-oxide-semiconductor field-effect transistors and photovoltaics. So, in this study, various shaped SiGe nanostructures were selectively grown on Si substrate through ultrahigh vacuum chemical vapor deposition (UHV-CVD) of SiGe on the hexagonally arranged Si openings obtained using nanotemplates. We adopted two types of nanotemplates in this study; anodic aluminum oxide (AAO) and diblock copolymer of PS-b-PMMA. Well ordered and various shaped nanostructure of SiGe, nanodots and nanowire, were fabricated on Si openings by combining SEG of SiGe to self-assembled nanotemplates. Nanostructure fabrication method adopted in this study will open up the easy way to produce the integrated nanoelectronic device arrays using the well ordered nano-building blocks obtained from the combination of SEG and self-assembled nanotemplates.

• Macromolecular Research
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• v.17 no.5
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• pp.307-312
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• 2009

Core-shell hydrogel nanocomposite was fabricated by encapsulating a silica-gold nanoshell (SGNS) with poly(N-isopropylacrylamide-co-acrylic acid) (PNIPAM-co-AAc) copolymer. The oleylamine-functionalized SONS was used as a nanotemplate for the shell-layer growth of hydrogel copolymer. APS (ammonium persulfate) was used as a polymerization initiator to produce a hydrogel-encapsulated SGNS (H-SGNS). The amounts of NIPAM (N-isopropylacrylamide) monomers were optimized to reproduce the hydrogel-encapsulated SGNS. The shell-layer thickness was increased with the increase of polymerization time and no further increase in the shell-layer thickness was clearly observed over 16 h. H-SGNS exhibited the systematic changes of particle size corresponding to the variation of pH and temperature, which was originated from hydrogen-bonding interaction between PNIPAM amide groups and water, as well as electrostatic forces attributed by the ionization of carboxylic groups in acrylic acid.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.57-57
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• 2018

Zinc-oxide (ZnO), II-VI semiconductor with a wide and direct band gap (Eg: 3.2~3.4 eV), is one of the most potential candidates to substitute for ITO due to its excellent chemical, thermal stability, specific electrical and optoelectronic property. However, the electrical resistivity of un-doped ZnO is not low enough for the practical applications. Therefore, a number of doped ZnO films have been extensively studied for improving the electrical conductivities. In this study, Ti-doped ZnO films were successfully prepared by atomic layer deposition (ALD) techniques. ALD technique was adopted to careful control of Ti doping concentration in ZnO films and to show its feasible application for 3D nanostructured TCO layers. Here, the structural, optical and electrical properties of the Ti-doped ZnO depending on the Ti doping concentration were systematically presented. Also, we presented 3D nanostructured Ti-doped ZnO layer by combining ALD and nanotemplate processes.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.612-612
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• 2013

The band-gap opening in graphene is a key factor in developing graphene-based field effect transistors. Although graphene is a gapless semimetal, a band-gap opens when graphene is formed into a graphene nanoribbon (GNR). Moreover, the band-gap energy can be manipulated by the width of the GNR. In this study, we propose a site-specific synthesis of a width-tailored GNR directly onto an insulating substrate. Predeposition of a diamond-like carbon nanotemplate onto a SiO2/Si wafer via focused ion beam-assisted chemical vapor deposition is first utilized for growth of the GNR. These results may present a feasible route for growing a width-tailored GNR onto a specific region of an insulating substrate.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2002.11a
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• pp.81-85
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• 2002

전기 전자 제품에 사용되는 반도체 칩이나 부품들은 작동시 발열을 하게 되며 이러한 열은 적절히 제거되지 않은 경우 전기 전자 제품의 오작동을 유발시키는 요인이 된다. 발열부품이 작동할 때 발생되는 열을 제거하기 위해서 히트싱크나 냉각팬과 같은 구조를 발열 부품 장착시 같이 설치하는 방법이 일반적으로 사용되는 냉각구조 형태지만 이와 같은 냉각 구조는 최근의 전기 전가 제품의 소형화 추세에 부응하는데는 한계가 있다. 따라서 이러한 냉각 구조의 한계를 보완하기 위한 방안으로써 소형화한 히트싱크, 즉 두께와 방열의 중요 요인이 되는 히트싱크의 방열핀의 크기를 나노미터 단위에서 밀리미터 단위로 제조한 마이크로 히트 싱크를 제조하여 그 효용성에 대해 연구하고자 하였다. 마이크로 히트싱크의 제조는 균일한 포어를 포함한 폴리머 멤브레인에 열전도성이 뛰어난 금속을 무전해 도금하는 방법으로 제조하였으며 주사현미경으로써 관찰하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.145.2-145.2
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• 2013

The band-gap opening in graphene is a key factor in developing graphene-based field effect transistors. Although graphene is a gapless semimetal, a band-gap opens when graphene is formed into a graphene nanoribbon (GNR). Moreover, the band-gap energy can be manipulated by the width of the GNR. In this study, we propose a site-specific synthesis of a width-tailored GNR directly onto an insulating substrate. Predeposition of a diamond-like carbon nanotemplate onto a SiO2/Si wafer via focused ion beam-assisted chemical vapor deposition is first utilized for growth of the GNR. These results may present a feasible route for growing a width-tailored GNR onto a specific region of an insulating substrate.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.265.1-265.1
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• 2013

Nanoporous anodic aluminum oxide (AAO), a self-ordered hexagonal array has various applications for nanofabrication such as nanotemplate, and nanostructure. In order to obtain highly-ordered porous alumina membranes, Masuda et al. proposed a two-step anodization process however this process is confined to small domain size and long hours. Recently, alternative methods overcoming limitations of two-step process were used to make prepatterned Al surface. In this work, we confirmed that there is a specific tendency used a PDMS stamp to obtain a pre-patterned Al surface. Using the nanoindentaions of a PDMS stamp as chemical carrier for wet etching, we can easily get ordered nanoporous template without two-step process. This chemical etching method using a PDMS stamp is very simple, fast and inexpensive. We use two types of PDMS stamps that have different intervals (800nm, 1200nm) and change some parameters have influenced the patterning of being anodized, applied voltage, soaking and stamping time. Through these factors, we demonstrated the patterning effect of large scale PDMS stamp.

• Journal of the Microelectronics and Packaging Society
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• v.16 no.4
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• pp.29-32
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• 2009

Dense and periodic arrays of nano-sized holes were patterned in oxide thin film on GaAs substrate. To obtain the nano-size patterns, self-assembling diblock copolymer was used to produce thin film of uniformly distributed parallel cylinders of polymethylmethacrylate (PMMA) in polystyrene (PS) matrix. The PMMA cylinders were removed with UV expose and acetic acid rinse to produce PS nanotemplate. By reactive ion etching, pattern of the PS template was transferred to under laid silicon oxide layer. Transferred patterns were reached to the GaAs substrate by controlling the dry etching time. We confirmed the achievement of etching through the removing oxide layer and observation of GaAs substrate surface. Optimized etching time was 90 to 100 sec. Pore sizes of the nanopattern in the silicon oxide layer were 20~22 nm.

• Journal of the Microelectronics and Packaging Society
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• v.13 no.3 s.40
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• pp.13-17
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• 2006

Dense and periodic arrays of holes and tungsten none dots were fabricated on silicon oxide and silicon. The holes were approximately 25 nm wide, 40 nm deep, and 60 nm apart. To obtain nano-size patterns, self-assembling resists were used to produce layer of hexagonally ordered parallel cylinders of polymethylmethacrylate(PMMA) in polystyrene(PS) matrix. The PMMA cylinders were degraded and removed with acetic acid rinse to produce a PS mask for pattern transfer. The silicon oxide was removed by fluorine-based reactive ion etching(RIE). Selectively deposited tungsten nano dots were formed inside nano-sized trench by using a low pressure chemical vapor deposition(LPCVD) method. Tungsten nano dot and trenched silicon sizes were 26 nm and 30 nm, respectively.