• 제목/요약/키워드: nanopores

검색결과 64건 처리시간 0.027초

팔리고스카이트 내 수소 및 이산화탄소 나노공간한정 (Nanoconfinement of Hydrogen and Carbon Dioxide in Palygorskite)

  • 김주혁;권기덕
    • 광물과 암석
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    • 제36권4호
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    • pp.221-232
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    • 2023
  • 탄소중립을 위한 이산화탄소 저감 기술 및 대체 에너지에 대한 수요가 계속 증가하고 있다. 팔리고스카이트(palygorskite)는 리본 구조를 가지는 점토광물로 넓은 표면적의 나노크기의 공극을 가지고 있어, 지구온난화의 주범인 이산화탄소(CO2)를 포집하고 친환경 대체 에너지인 수소(H2)를 저장할 수 있는 물질로 제안된 바 있다. 이번 논문에서는 대정준 몬테 카를로(grand canonical Monte carlo) 시뮬레이션을 사용하여 팔리고스카이트 나노공극으로의 CO2 및 H2 분자의 흡착 등온선과 기작에 대한 기초연구의 예비 결과를 보고한다. 실온에서 기체의 분압 관련 변수인 화학 포텐셜(chemical potential)의 증가에 따라 나노공극에 흡착되는 CO2 및 H2 함량은 증가하였다. CO2와 비교하여, H2의 흡착은 더 높은 화학 포텐셜, 즉 높은 에너지가 필요하였다. 이론 계산으로 얻은 나노공극에서의 평균 제곱 변위(mean squared displacement)는 CO2 보다 H2가 훨씬 높았으며 기존 실험 결과와 일치했다. CO2는 나노공극에서 일렬로 배열된 반면, H2는 매우 불규칙한 배열을 보였다. 이번 연구 방법은 CO2 및 H2를 저장 가능한 지구물질 광물을 찾는 개발연구뿐만 아니라, 지중환경에서 유체와 광물의 반응을 근본적으로 이해하는 데 기여할 것으로 기대한다.

Electrochemical Synthesis of TiO2 Photocatalyst with Anodic Porous Alumina

  • Hattori, Takanori;Fujino, Takayoshi;Ito, Seishiro
    • 한국재료학회지
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    • 제17권11호
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    • pp.593-600
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    • 2007
  • Aluminum was anodized in a $H_2SO_4$ solution, and titanium (IV) oxide ($TiO_2$) was electrodeposited into nanopores of anodic porous alumina in a mixed solution of $TiOSO_4$ and $(COOH)_2$. The photocatalytic activity of the prepared film was analyzed for photodegradation of methylene blue aqueous solution. Consequently, we found it was possible to electrodeposit $TiO_2$ onto anodic porous alumina, and synthesized it into the nanopores by hydrolysis of a titanium complex ion under AC 8-9 V when film thickness was about $15-20{\mu}m$. The photocatalytic activity of $TiO_2$-loaded anodic porous alumina ($TiO_2/Al_2O_3$) at an impressed voltage of 9 V was the highest in every condition, being about 12 times as high as sol-gel $TiO_2$ on anodic porous alumina. The results revealed that anodic porous alumina is effective as a substrate for photocatalytic film and that high-activity $TiO_2$ film can be prepared at low cost.

반도체 산업용 나노기공 함유 유기실리카 박막

  • 차국헌;윤도영;이진규;이희우
    • 한국결정학회:학술대회논문집
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    • 한국결정학회 2002년도 정기총회 및 추계학술연구발표회
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    • pp.48-48
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    • 2002
  • It is generally accepted that ultra low dielectric interlayer dielectric materials (k < 2.2) will be necessary for ULSI advanced microelectronic devices after 2003, according to the International Technology Roadmap for Semiconductors (ITRS) 2000. A continuous reduction of dielectric constant is believed to be possible only by incorporating nanopores filled with air (k = 1.0) into electrically insulating matrices such as poly(methyl silsesquioxane) (PMSSQ). The nanopo.ous low dielectric films should have excellent material properties to survive severe mechanical stress conditions imposed during the advanced semiconductor processes such as chemical mechanical planarization process and multilayer fabrication. When air is incorporated into the films for lowering k, their mechanical strength has inevitably to be sacrificed. To minimize this effect, the nanopores are controlled to exist in the film as closed cells. The micromechanical properties of the nanoporous thin films are considered more seriously than ever, particularly for ultra low dielectric applications. In this study, three approaches were made to design and develop nanoporous low dielectric films with improved micromechanical properties: 1) wall density increase of nanoporous organosilicate film by copolymerization of carbon bridged comonomers; 2) incorporation of sacrificial phases with good miscibility; 3) selective surface modification by plasma treatment. Nanoporous low-k films were prepared with copolymerized PMSSQ and star-shaped sacrificial organic molecules, both of which were synthesized to control molecular weight and functionality. The nanoporous structures of the films were observed using field emission scanning electron microscopy, cross-sectional transmission electron microscopy, atomic force microscopy, and positronium annihilation lifetime spectroscopy(PALS). Micromechanical characterization was performed using a nanoindentor to measure hardness and modulus of the films.

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레이저 간섭 석판술로 전처리된 AAO을 이용한 Fe 나노점 제작 (Fabrication of Fe Nanodot Using AAO Prepatterned by Laser Interference Lithography)

  • 강진혁;황현미;이성구;이재용
    • 한국자기학회지
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    • 제17권3호
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    • pp.137-140
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    • 2007
  • 레이저 간섭 석판 장비(Laser Interference Lithography; LIL)를 이용하여, Anodic Aluminum Oxide(AAO) 나노기공의 배열을 향상 시켰다. 이후 진공에서 Fe와 Cu를 AAO/Si에 성장하고, AAO를 제거하여 Cu/Fe(20 nm) 나노구조를 제작하였다. AAO의 나노기공과 나노구조는 전처리 과정에서 제작된 PR(photoresist) 나노선을 따라 1차원으로 배열되었다. 자성 나노구조의 자기이력곡선으로부터 이들이 vortex 구조를 가지며, 쌍극자 상호작용이 지배적임을 확인하였다.

나노기공구조를 가진 알루미나필름의 트라이볼로지 특성 (Tribological Properties of Nanoporous Structured Alumina Film)

  • 김효상;김대현;안효석;한준희;이우
    • Tribology and Lubricants
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    • 제26권1호
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    • pp.14-20
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    • 2010
  • Tribological properties of nanoporous structured alumina film was investigated. Alumina film (AAO: anodic aluminum oxide) of $60{\mu}m$ thickness having nanopores of 45 nm diameter with 105 nm interpore-diatance was fabricated by mild anodization process. Reciprocating ball-on-flat sliding friction tests using 1 mm diameter steel ball as a counterpart were carried out with wide range of normal load from 1 mN to 1 N in an ambient environment. The morphology of worn surfaces were analyzed using scanning electron microscopy. The friction coefficient was strongly influenced by the applied normal load. Smooth layer patches were formed on the worn surface of both AAO and steel ball at relatively high load (100 mN and 1 N) due to tribochemical reaction and compaction of wear debris. These tribolayers contributed to the lower friction at high loads. Extremely thin layer patches, due to mild plastic deformation of surface layer, were sparsely distributed on the worn surface of AAO at low loads (1 mN and 10 mN) without the evidence of tribochemical reaction. Delaminated wear particles were generated at high loads by fatigue due to repeated loading and sliding.

Nondestructive, Quantitative Synchrotron Grazing Incidence X-ray Scattering Analysis of Cylindrical Nanostructure in Supported Thin Films

  • Yoon, Jin-Hwan;Yang, Seung-Yun;Lee, Byeong-Du;Joo, Won-Chul;Heo, Kyu-Young;Kim, Jin-Kon;Ree, Moon-Hor
    • 한국고분자학회:학술대회논문집
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    • 한국고분자학회 2006년도 IUPAC International Symposium on Advanced Polymers for Emerging Technologies
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    • pp.300-300
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    • 2006
  • Nondestructive nanostructural analysis is indispensable in the development of nano-materials and nano-fabrication processes for use in nanotechnology applications. In this paper, we demonstrate for the first time a quantitative, nondestructive analysis of nanostructured thin films supported on substrates and their templated nanopores by using grazing incidence X-ray scattering and data analysis with a derived scattering theory. Our analysis disclosed that vertically oriented nanodomain cylinders had formed in 20-100 nm thick films supported on substrates consisting of a mixture of poly(styrene-b-methyl methacrylate) (PS-b-PMMA) and PMMA homopolymer, and that the PMMA nanodomains were selectively etched out by ultraviolet light exposure and a subsequent rinse with acetic acid, resulting in a structure consisting of hexagonally packed cylindrical nanopores.

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Structure and Property Analysis of Nanoporous Low Dielectric Constant SiCOH Thin Films

  • 허규용;이문호;이시우;박영희
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2009년도 춘계학술대회 논문집
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    • pp.167-169
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    • 2009
  • We have carried out quantitative structure and property analysis of the nanoporous structures of low dielectric constant (low-k) carbon-doped silicon oxide (SiCOH) films, which were deposited with plasma enhanced chemical vapor deposition (PECVD) using vinyltrimethylsilane (VTMS), divinyldimethylsilane (DVDMS), and tetravinylsilane (TVS) as precursor and oxygen as an oxidant gas. We found that the SiCOH film using VTMS only showed well defined spherical nanopores within the film after thermal annealing at $450^{\circ}C$ for 4 h. The average pore radius of the generated nanopores within VTMS SiCOH film was 1.21 nm with narrow size distribution of 0.2. It was noted that thermally labile $C_{x}H_{y}$ phase and Si-$CH_3$ was removed to make nanopore within the film by thermal annealing. Consequently, this induced that decrease of average electron density from 387 to $321\;nm^{-3}$ with increasing annealing temperature up to $450^{\circ}C$ and taking a longer annealing time up to 4 h. However, the other SiCOH films showed featureless scattering profiles irrespective of annealing conditions and the decreases of electron density were smaller than VTMS SiCOH film. Because, with more vinyl groups are introduced in original precursor molecule, films contain more organic phase with less volatile characteristic due to the crosslinking of vinyl groups. Collectively, the presenting findings show that the organosilane containing vinyl group was quite effective to deposit SiCOH/$C_{x}H_{y}$ dual phase films, and post annealing has an important role on generation of pores with the SiCOH film.

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