• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.93-93
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• 2016

Large scale integrated circuits (LSIs) has been improved by the shrinkage of the circuit dimensions. The smaller chip sizes and increase in circuit density require the miniaturization of the line-width and space between metal interconnections. Therefore, an extreme precise control of the critical dimension and pattern profile is necessary to fabricate next generation nano-electronics devices. The pattern profile control of plasma etching with an accuracy of sub-nanometer must be achieved. To realize the etching process which achieves the problem, understanding of the etching mechanism and precise control of the process based on the real-time monitoring of internal plasma parameters such as etching species density, surface temperature of substrate, etc. are very important. For instance, it is known that the etched profiles of organic low dielectric (low-k) films are sensitive to the substrate temperature and density ratio of H and N atoms in the H2/N2 plasma [1]. In this study, we introduced a feedback control of actual substrate temperature and radical density ratio monitored in real time. And then the dependence of etch rates and profiles of organic films have been evaluated based on the substrate temperatures. In this study, organic low-k films were etched by a dual frequency capacitively coupled plasma employing the mixture of H2/N2 gases. A 100-MHz power was supplied to an upper electrode for plasma generation. The Si substrate was electrostatically chucked to a lower electrode biased by supplying a 2-MHz power. To investigate the effects of H and N radical on the etching profile of organic low-k films, absolute H and N atom densities were measured by vacuum ultraviolet absorption spectroscopy [2]. Moreover, using the optical fiber-type low-coherence interferometer [3], substrate temperature has been measured in real time during etching process. From the measurement results, the temperature raised rapidly just after plasma ignition and was gradually saturated. The temporal change of substrate temperature is a crucial issue to control of surface reactions of reactive species. Therefore, by the intervals of on-off of the plasma discharge, the substrate temperature was maintained within ${\pm}1.5^{\circ}C$ from the set value. As a result, the temperatures were kept within $3^{\circ}C$ during the etching process. Then, we etched organic films with line-and-space pattern using this system. The cross-sections of the organic films etched for 50 s with the substrate temperatures at $20^{\circ}C$ and $100^{\circ}C$ were observed by SEM. From the results, they were different in the sidewall profile. It suggests that the reactions on the sidewalls changed according to the substrate temperature. The precise substrate temperature control method with real-time temperature monitoring and intermittent plasma generation was suggested to contribute on realization of fine pattern etching.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.25 no.6
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• pp.272-279
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• 2015

$Y_2O_3:Eu^{3+}$ is an excellent red-emitting phosphor, which has been widely used for display devices due to highly luminescent property and chemical stability. In this study, $Y_2O_3:Eu^{3+}$ red phosphors were prepared using the solid state reaction and RF thermal plasma synthesis. The particle size of $Y_2O_3:Eu^{3+}$ phosphors obtained by the solid state reaction varied from 10 to $20{\mu}m$, and 30~100 nanometer sized $Y_2O_3:Eu^{3+}$ particles were obtained from a liquid form of raw material through RF thermal plasma synthesis without an additional heat treatment. Photoluminescence measurements of the obtained $Y_2O_3:Eu^{3+}$ particles showed a red emission peak at 611 nm ($^5D_0{\rightarrow}^7F_2$). PL intensity of red nano phosphors prepared by RF thermal plasma synthesis was comparable to that of red phosphors prepared by the solid state reaction, indicating that nano-sized $Y_2O_3:Eu^{3+}$ red phosphors could be successfully synthesized using one-step process of RF thermal plasma.

• Journal of the Korean Electrochemical Society
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• v.4 no.4
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• pp.172-175
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• 2001

Nanophase catalyst layer for direct methanol fuel cell has been fabricated by magnetron sputtering method. Catalyst metal targets and carbon were sputtered simultaneously on the Nafion membrane surface at abnormally higher gas (Ar/He mixture) pressure than that of normal thin film processing. They could be coated as a novel structure of catalyst layer containing porous PtRu or Pt and carbon particles both in nanometer range. Membrane electrode assembly made with this layer led to a reduction of the catalyst loading. At the catalyst loading of 1.5mg $PtRu/cm^2$ for anode and 1mg $Pt/cm^2$ for cathode, it could provide $45 mW/cm^2$ in the operation at 2 M methanol, 1 Bar Air at 80"C. It is more than $30\%$ increase of the power density performance at the same level of catalyst loading by conventional method. This was realized due to the ultra fine particle sizes and a large fraction of the atoms lie on the grain boundaries of nanophase catalyst layer and they played an important role of fast catalyst reaction kinetics and more efficient fuel path. Commercialization of direct methanol fuel cell for portable electronic devices is anticipated by the further development of such design.

• Journal of the Korean Electrochemical Society
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• v.15 no.2
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• pp.95-100
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• 2012

$LiFePO_4$ is an attractive cathode material due to its low cost, good cyclability and safety. But it has low ionic conductivity and working voltage impose a limitation on its application for commercial products. In order to solve these problems, the iron($Fe^{2+}$)site in $LiFePO_4$ can be substituted with other transition metal ions such as $Mn^{2+}$ in pursuance of increase the working voltage. Also, reducing the size of electrode materials to nanometer scale can improve the power density because of a larger electrode-electrolyte contact area and shorter diffusion lengths for Li ions in crystals. Therefore, we chose electrospinning as a general method to prepare $Li[Fe_{0.9}Mn_{0.1}]PO_4$ to increase the surface area. Also, there have been very a few reports on the synthesis of cathode materials by electrospinning method for Lithium ion batteries. The morphology and nanostructure of the obtained $Li[Fe_{0.9}Mn_{0.1}]PO_4$ nanofibers were characterized using scanning electron microscopy(SEM). X-ray diffraction(XRD) measurements were also carried out in order to determine the structure of $Li[Fe_{0.9}Mn_{0.1}]PO_4$ nanofibers. Electrochemical properties of $Li[Fe_{0.9}Mn_{0.1}]PO_4$ were investigated with charge/discharge measurements, electrochemical impedance spectroscopy measurements(EIS).

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.16 no.2
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• pp.82-87
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• 2006

Glassy specimen was obtained by melting and quenching a borosilicate glass frit miked with $10{\sim}80wt%$ EAF dust. The glass transition temperature, $T_g$ of glassy specimen was measured around $550^{\circ}C$ from the DTA curve and the eat treatment condition to crystallize a glassy specimen was selected as $700^{\circ}C$/1 hr. The spinel crystal peaks were found in XRD analysis for the glass containing dust > 70 wt%. For the glass-ceramics, however, the spinel peaks in a specimen containing dust > 40 wt%, and the spinel and willemite peaks in dust > 80 wt%. The crystals of several tens of nanometer with aspect ratio of $0.7{\sim}1.0$ were observed at a glassy specimen containing dust > 40 wt% by SEM which was not found by XRD analysis. For the glass-ceramics, the crystals were found in a specimen containing dust of even 10 wt% by SEM. The feature and distribution of crystals observed through the specimen for a glass-ceramics were diverse and not uniform. The crystals found in the glass-ceramics containing 70 wt% dust were hexahedral with an aspect ratio of around unity.

• 한국신재생에너지학회:학술대회논문집
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• 2005.11a
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• pp.561-566
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• 2005

Polycrystalline silicon films were deposited using hot wire CVD (HWCVD). The deposition of silicon thin films was approached by the theory of charged clusters (TCC). The TCC states that thin films grow by self-assembly of charged clusters or nanoparticles that have nucleated in the gas phase during the normal thin film process. Negatively charged clusters of a few nanometer in size were captured on a transmission electron microscopy (TEM) grid and observed by TEM. The negatively charged clusters are believed to have been generated by ion-induced nucleation on negative ions, which are produced by negative surface ionization on a tungsten hot wire. The electric current on the substrate carried by the negatively charged clusters during deposition was measured to be approximately $-2{\mu}A/cm^2$. Silicon thin films were deposited at different $SiH_4$ and $H_2$ gas mixtures and filament temperatures. The crystalline volume fraction, grain size and the growth rate of the films were measured by Raman spectroscopy, X-ray diffraction and scanning electron microscopy. The deposit ion behavior of the si1icon thin films was related to properties of the charged clusters, which were in turn controlled by the process conditions. In order to verify the effect of the charged clusters on the growth behavior, three different electric biases of -200 V, 0 V and +25 V were applied to the substrate during the process, The deposition rate at an applied bias of +25 V was greater than that at 0 V and -200 V, which means that the si1icon film deposition was the result of the deposit ion of charged clusters generated in the gas phase. The working pressures had a large effect on the growth rate dependency on the bias appled to the substrate, which indicates that pressure affects the charging ratio of neutral to negatively charged clusters. These results suggest that polycrystalline silicon thin films with high crystalline volume fraction and large grain size can be produced by control1ing the behavior of the charged clusters generated in the gas phase of a normal HWCVD reactor.

• Journal of Energy Engineering
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• v.20 no.2
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• pp.103-108
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• 2011

$Li_2MnSiO_4$/C was synthesized by solid state reaction and solution synthesis with sucrose for carbon source. The X-ray diffraction patterns of solid state reaction indicates small amount of impurities. By FE-SEM and HR-TEM, solution synthesis comprised several tens of nanometer comparing to 500~600 nm of $Li_2MnSiO_4$/C prepared by solid state reaction. The $Li_2MnSiO_4$/C prepared by solution synthesis show better electrochemical performance than solid state reaction. The first charge-discharge capacity are 236, 189 mAh/g respectively by solution synthesis. But its cycle performance was poor as yet and its capacity retention was 62% after 10 cycles.

• Journal of Powder Materials
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• v.9 no.6
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• pp.394-408
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• 2002

Nanostructured high strength metastable Al-, Mg- and Ti-based alloys containing different amorphous, quasicrystalline and nanocrystalline phases are synthesized by non-equilibrium processing techniques. Such alloys can be prepared by quenching from the melt or by powder metallurgy techniques. This paper focuses on one hand on mechanically alloyed and ball milled powders containing different volume fractions of amorphous or nano-(quasi)crystalline phases, consolidated bulk specimens and, on the other hand. on cast specimens containing different constituent phases with different length-scale. As one example. $Mg_{55}Y_{15}Cu_{30}$- based metallic glass matrix composites are produced by mechanical alloying of elemental powder mixtures containing up to 30 vol.% $Y_2O_3$ particles. The comparison with the particle-free metallic glass reveals that the nanosized second phase oxide particles do not significantly affect the glass-forming ability upon mechanical alloying despite some limited particle dissolution. A supercooled liquid region with an extension of about 50 K can be maintained in the presence of the oxides. The distinct viscosity decrease in the supercooled liquid regime allows to consolidate the powders into bulk samples by uniaxial hot pressing. The $Y_2O_3$ additions increase the mechanical strength of the composites compared to the $Mg_{55}Y_{15}Cu_{30}$ metallic glass. The second example deals with Al-Mn-Ce and Al-Cu-Fe composites with quasicrystalline particles as reinforcements, which are prepared by quenching from the melt and by powder metallurgy. $Al_{98-x}Mn_xCe_2$ (x =5,6,7) melt-spun ribbons containing a major quasicrystalline phase coexisting with an Al-matrix on a nanometer scale are pulverized by ball milling. The powders are consolidated by hot extrusion. Grain growth during consolidation causes the formation of a micrometer-scale microstructure. Mechanical alloying of $Al_{63}Cu_{25}Fe_{12}$ leads to single-phase quasicrystalline powders. which are blended with different volume fractions of pure Al-powder and hot extruded forming $Al_{100-x}$$(Al_{0.63}Cu_{0.25}Fe_{0.12})_x$ (x = 40,50,60,80) micrometer-scale composites. Compression test data reveal a high yield strength of ${\sigma}_y{\geq}$700 MPa and a ductility of ${\varepsilon}_{pl}{\geq}$5% for than the Al-Mn-Ce bulk samples. The strength level of the Al-Cu-Fe alloys is ${\sigma}_y{\leq}$550 MPa significantly lower. By the addition of different amounts of aluminum, the mechanical properties can be tuned to a wide range. Finally, a bulk metallic glass-forming Ti-Cu-Ni-Sn alloy with in situ formed composite microstructure prepared by both centrifugal and injection casting presents more than 6% plastic strain under compressive stress at room temperature. The in situ formed composite contains dendritic hcp Ti solid solution precipitates and a few $Ti_3Sn,\;{\beta}$-(Cu, Sn) grains dispersed in a glassy matrix. The composite micro- structure can avoid the development of the highly localized shear bands typical for the room temperature defor-mation of monolithic glasses. Instead, widely developed shear bands with evident protuberance are observed. resulting in significant yielding and homogeneous plastic deformation over the entire sample.

• KIPS Transactions on Software and Data Engineering
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• v.7 no.10
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• pp.377-382
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• 2018

This study deals with internal state and tissue density analysis methods for red ginseng grade determination. For internal measurement of red ginseng, there have been various studies on nondestructive testing methods since the 1990s, It was difficult to grasp the most important inner hole and inside whites in the grading. So in this study, we developed a closed capturing device for infra-red illumination environment, and developed an internal measurement system that can detect the presence and diameter of inner hole and inside whites. Made devices consisted of infrared lights with a high transmission rate of red ginseng in 920 nanometer wave band, a infra-red camera and a Y axis actuator with a red ginseng automatically controlled focus on the camera. The proposed algorithm performs an auto-focus system on the Y-axis actuator to automatically adjust the sharp focus of the object according to the size and thickness. Then red ginseng is rotated $360^{\circ}$ at $1^{\circ}$ intervals and 360 total images are acquired, and reconstructed as a sinogram through Radon transform and Back-projection algorithm was performed to acquire internal images of red ginseng. As a result of the algorithm, it was possible to acquire internal cross-sectional image regardless of the thickness and shape of red ginseng. In the future, if more than 10,000 different shapes and sizes of red ginseng internal cross-sectional image are acquired and the classification criterion is applied, it can be used as a reliable automated ginseng grade automatic measurement method.

• Journal of the Korean Society for Nondestructive Testing
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• v.30 no.5
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• pp.471-478
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• 2010

Thin films play an important role in many technological applications including microelectronic devices, magnetic storage media, MEMS and surface coatings. It is well known that a thin film's material properties can be very different from the corresponding bulk properties and thus there has been a strong need for the development of a reliable test method to measure the mechanical properties of a thin film. We have developed an alternative and convenient test method to overcome the limitations of previous membrane deflection experiment and uniaxial tensile test by adopting a white light interferometer having sub-nanometer out-of-plane displacement resolution. The freestanding aluminium specimens are tested to verity the effectiveness of the test method developed and get the tensile properties. The specimens are 0.5 rum wide, $1{\mu}m$ thick and fabricated through MEMS processes including sputtering. 1 to 5 specimens are fabricated on Si dies. The membrane deflection experiments are carried out by using a homemade tester consisted of a motor-driven loading tip, a load cell, and 6 DOF alignment stages. The test system is compact enough to set it up beneath a commercial white light interferometric microscope. The white light fringes are utilized to align a specimen with the tester. The Young's modulus and yield point stress of the aluminium film are 62 GPa and 247 MPa, respectively.