• 제목/요약/키워드: nano-aperture

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Fabrication of Nano Dot and Line Arrays Using NSOM Lithography

  • Kwon Sangjin;Kim Pilgyu;Jeong Sungho;Chang Wonseok;Chun Chaemin;Kim Dong-Yu
    • Journal of the Optical Society of Korea
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    • 제9권1호
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    • pp.16-21
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    • 2005
  • Using a cantilever type nanoprobe having a 100㎚m aperture at the apex of the pyramidal tip of a near-field scanning optical microscope (NSOM), nanopatterning of polymer films are conducted. Two different types of polymer, namely a positive photoresist (DPR-i5500) and an azopolymer (Poly disperse orange-3), spincoated on a silicon wafer are used as the substrate. A He-Cd laser with a wavelength of 442㎚ is employed as the illumination source. The optical near-field produced at the tip of the nanoprobe induces a photochemical reaction on the irradiated region, leading to the fabrication of nanostructures below the diffraction limit of the laser light. By controlling the process parameters properly, nanopatterns as small as 100㎚ are produced on both the photoresist and azopolymer samples. The shape and size variations of the nanopatterns are examined with respect to the key process parameters such as laser beam power, irradiation time or scanning speed of the probe, operation modes of the NSOM (DC and AC modes), etc. The characteristic features during the fabrication of ordered structures such as dot or line arrays using NSOM lithography are investigated. Not only the direct writing of nano array structures on the polymer films but also the fabrication of NSOM-written patterns on the silicon substrate were investigated by introducing a passivation layer over the silicon surface. Possible application of thereby developed NSOM lithography technology to the fabrication of data storage is discussed.

초고전압 투과전자현미경의 원격시범운영 (First Remote Operation of the High Voltage Electron Microscope Newly Installed in KBSI)

  • 김영민;김진규;김윤중;허만회;권경훈
    • Applied Microscopy
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    • 제34권1호
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    • pp.13-21
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    • 2004
  • 최근에 한국기초과학지원연구원에 설치된 초고전압 투과전자현미경은 원자분해능(점분해능 $1.2{\AA}$ 이하)의 구현과 고경사각 tilting 기능(${\pm}60^{\circ}$)에 의해 시편의 원자배열 구조를 3차원적으로 이미징할 수 있는 고성능 투과전자현미경이다. 이에 더하여 FasTEM이라는 원격 운용 시스템이 갖춰져 있어서 장비의 직접운용에 따른 여러 제약을 극복할 수 있게 한다. 초고전압 투과전자현미경의 원격운용을 위해 FasTEM 원격 시스템은 본원 초고전압 투과전자현미경에 설치된 Server 시스템과 서울분소에 설치된 Client 콘솔 시스템을 155 Mbps급 초고속 선도망 KOREN에 연결하여 구성하였으며 서울분소에서 대전본원의 초고전압 투과전자현미경을 운영하여 Au의 [001] 고분해능 영상을 얻는데 성공하였다. 초고전압 투과전자 현미경의 조사계 및 결상계 시스템 파라메타들의 조정, 각각의 detector 시스템 조정과 이미징, goniometer와 aperture 구동을 위한 motor-driven system들의 동작 등 초고전압 투과전자현미경의 원격 조정은 원격 작업자가 현장에 있는 것과 마찬가지로 실시간 운용이 가능하였다. 초고전압 투과전자현미경과 IT 기반기술의 접목에 의해 실현된 원격운용 기능은 국가적 공동연구시설에 대한 e-Science Grid를 구축하는데 중요한 역할을 하리라 기대된다.

Study of Localized Surface Plasmon Polariton Effect on Radiative Decay Rate of InGaN/GaN Pyramid Structures

  • Gong, Su-Hyun;Ko, Young-Ho;Kim, Je-Hyung;Jin, Li-Hua;Kim, Joo-Sung;Kim, Taek;Cho, Yong-Hoon
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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    • pp.184-184
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    • 2012
  • Recently, InGaN/GaN multi-quantum well grown on GaN pyramid structures have attracted much attention due to their hybrid characteristics of quantum well, quantum wire, and quantum dot. This gives us broad band emission which will be useful for phosphor-free white light emitting diode. On the other hand, by using quantum dot emission on top of the pyramid, site selective single photon source could be realized. However, these structures still have several limitations for the single photon source. For instance, the quantum efficiency of quantum dot emission should be improved further. As detection systems have limited numerical aperture, collection efficiency is also important issue. It has been known that micro-cavities can be utilized to modify the radiative decay rate and to control the radiation pattern of quantum dot. Researchers have also been interested in nano-cavities using localized surface plasmon. Although the plasmonic cavities have small quality factor due to high loss of metal, it could have small mode volume because plasmonic wavelength is much smaller than the wavelength in the dielectric cavities. In this work, we used localized surface plasmon to improve efficiency of InGaN qunatum dot as a single photon emitter. We could easily get the localized surface plasmon mode after deposit the metal thin film because lnGaN/GaN multi quantum well has the pyramidal geometry. With numerical simulation (i.e., Finite Difference Time Domain method), we observed highly enhanced decay rate and modified radiation pattern. To confirm these localized surface plasmon effect experimentally, we deposited metal thin films on InGaN/GaN pyramid structures using e-beam deposition. Then, photoluminescence and time-resolved photoluminescence were carried out to measure the improvement of radiative decay rate (Purcell factor). By carrying out cathodoluminescence (CL) experiments, spatial-resolved CL images could also be obtained. As we mentioned before, collection efficiency is also important issue to make an efficient single photon emitter. To confirm the radiation pattern of quantum dot, Fourier optics system was used to capture the angular property of emission. We believe that highly focused localized surface plasmon around site-selective InGaN quantum dot could be a feasible single photon emitter.

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