• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.288-289
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• 2011

Indium Tin Oxide (ITO) is a typical highly Transparent Conductive Oxide (TCO) currently used as a transparent electrode material. Most widely used deposition method is the sputtering process for ITO film deposition because it has a high deposition rate, allows accurate control of the film thickness and easy deposition process and high electrical/optical properties. However, to apply high quality ITO thin film in a flexible microelectronic device using a plastic substrate, conventional DC magnetron sputtering (DMS) processed ITO thin film is not suitable because it needs a high temperature thermal annealing process to obtain high optical transmittance and low resistivity, while the generally plastic substrates has low glass transition temperatures. In the room temperature sputtering process, the electrical property degradation of ITO thin film is caused by negative oxygen ions effect. This high energy negative oxygen ions(about over 100eV) can be critical physical bombardment damages against the formation of the ITO thin film, and this damage does not recover in the room temperature process that does not offer thermal annealing. Hence new ITO deposition process that can provide the high electrical/optical properties of the ITO film at room temperature is needed. To solve these limitations we develop the Magnetic Field Shielded Sputtering (MFSS) system. The MFSS is based on DMS and it has the plasma limiter, which compose the permanent magnet array (Fig.1). During the ITO thin film deposition in the MFSS process, the electrons in the plasma are trapped by the magnetic field at the plasma limiters. The plasma limiter, which has a negative potential in the MFSS process, prevents to the damage by negative oxygen ions bombardment, and increases the heat(-) up effect by the Ar ions in the bulk plasma. Fig. 2. shows the electrical properties of the MFSS ITO thin film and DMS ITO thin film at room temperature. With the increase of the sputtering pressure, the resistivity of DMS ITO increases. On the other hand, the resistivity of the MFSS ITO slightly increases and becomes lower than that of the DMS ITO at all sputtering pressures. The lowest resistivity of the DMS ITO is $1.0{\times}10-3{\Omega}{\cdot}cm$ and that of the MFSS ITO is $4.5{\times}10-4{\Omega}{\cdot}cm$. This resistivity difference is caused by the carrier mobility. The carrier mobility of the MFSS ITO is 40 $cm^2/V{\cdot}s$, which is significantly higher than that of the DMS ITO (10 $cm^2/V{\cdot}s$). The low resistivity and high carrier mobility of the MFSS ITO are due to the magnetic field shielded effect. In addition, although not shown in this paper, the roughness of the MFSS ITO thin film is lower than that of the DMS ITO thin film, and TEM, XRD and XPS analysis of the MFSS ITO show the nano-crystalline structure. As a result, the MFSS process can effectively prevent to the high energy negative oxygen ions bombardment and supply activation energies by accelerating Ar ions in the plasma; therefore, high quality ITO can be deposited at room temperature.

• Journal of the Korean institute of surface engineering
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• v.46 no.2
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• pp.68-74
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• 2013

For the coating of diamond films on WC-Co tools, a buffer interlayer is needed because Co catalyzes diamond into graphite. W and Ti were chosen as candidate interlayer materials to prevent the diffusion of Co during diamond deposition. W or Ti interlayer of $1{\mu}m$ thickness was deposited on WC-Co substrate under Ar in a DC magnetron sputter. After seeding treatment of the interlayer-deposited specimens in an ultrasonic bath containing nanometer diamond powders, $2{\mu}m$ thick nanocrystalline diamond (NCD) films were deposited at $600^{\circ}C$ over the metal layers in a 2.45 GHz microwave plasma CVD system. The cross-sectional morphology of films was observed by FESEM. X-ray diffraction and visual Raman spectroscopy were used to confirm the NCD crystal structure. Micro hardness was measured by nano-indenter. The coefficient of friction (COF) was measured by tribology test using ball on disk method. After tribology test, wear tracks were examined by optical microscope and alpha step profiler. Rockwell C indentation test was performed to characterize the adhesion between films and substrate. Ti and W were found good interlayer materials to act as Co diffusion barriers and diamond nucleation layers. The COFs on NCD films with W or Ti interlayer were measured as less than 0.1 whereas that on bare WC-Co was 0.6~1.0. However, W interlayer exhibited better results than Ti in terms of the adhesion to WC-Co substrate and to NCD film. This result is believed to be due to smaller difference in the coefficients of thermal expansion of the related films in the case of W interlayer than Ti one. By varying the thickness of W interlayer as 1, 2, and $4{\mu}m$ with a fixed $2{\mu}m$ thick NCD film, no difference in COF and wear behavior but a significant change in adhesion was observed. It was shown that the thicker the interlayer, the stronger the adhesion. It is suggested that thicker W interlayer is more effective in relieving the residual stress of NCD film during cooling after deposition and results in stronger adhesion.

• Journal of the Korean Magnetics Society
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• v.10 no.5
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• pp.220-224
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• 2000

Ultra-fine $Co_{1+x}$F $e_{2-}$2x/ $Ti_{x}$ $O_4$ferrite powders have been prepared by the sol-gel method. The crystallographic and magnetic properties of the sample have been investigated by means of x-ray diffraction, Mossbauer spetroscopy and vibrating sample magnetometry. The formation of nano crystallized particles is confirmed. The x-ray diffractions of all samples with various compositions clearly indicate the presence of spinel structure. The Mossbauer spectra could be fitted as the superposition of two sextets due to F $e^{3+}$ A-site and B-site. The IS and QS values nearly constant with substituted Co-Ti contents, whereas $H_{hf}$ of B-site decreases with increasing Co-Ti substitution in $Co_{1+x}$F $e_{2-}$2x/ $Ti_{x}$ $O_4$. The magnetic behaviour of powders shows that the saturation magnetization and the coercivity decrease with increasing x in $Co_{1+x}$F $e_{2-}$2x/ $Ti_{x}$ $O_4$.$.X>.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.11a
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• pp.477-480
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• 2002

Si-O-C(-H) thin film with a tow dielectric constant were deposited on a P-type Si(100) substrate by an inductively coupled plasma chemical vapor deposition (ICPCVD). Bis-trimethylsilymethane (BTMSM, H$_{9}$C$_3$-Si-CH$_2$-Si-C$_3$H$_{9}$) and oxygen gas were used as Precursor. Hybrid type Si-O-C(-H) thin films with organic material have been generated many voids after annealing. Consequently, the Si-O-C(-H) films can be made a low dielectric material by the effect of void. The surface characterization of Si-O-C(-H) thin films were performed by SEM(scanning electron microscope). The characteristic analysis of Si-O-C(-H) thin films were performed by X-ray photoelectron spectroscopy (XPS).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.241-241
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• 2008

Macrofore formation in silicon and other semiconductors using electrochemical etching processes has been, in the last years, a subject of great attention of both theory and practice. Its first reason of concern is new areas of macropore silicone applications arising from microelectromechanical systems processing (MEMS), membrane techniques, solar cells, sensors, photonic crystals, and new technologies like a silicon-on-nothing (SON) technology. Its formation mechanism with a rich variety of controllable microstructures and their many potential applications have been studied extensively recently. Porous silicon is formed by anodic etching of crystalline silicon in hydrofluoric acid. During the etching process holes are required to enable the dissolution of the silicon anode. For p-type silicon, holes are the majority charge carriers, therefore porous silicon can be formed under the action of a positive bias on the silicon anode. For n-type silicon, holes to dissolve silicon is supplied by illuminating n-type silicon with above-band-gap light which allows sufficient generation of holes. To make a desired three-dimensional nano- or micro-structures, pre-structuring the masked surface in KOH solution to form a periodic array of etch pits before electrochemical etching. Due to enhanced electric field, the holes are efficiently collected at the pore tips for etching. The depletion of holes in the space charge region prevents silicon dissolution at the sidewalls, enabling anisotropic etching for the trenches. This is correct theoretical explanation for n-type Si etching. However, there are a few experimental repors in p-type silicon, while a number of theoretical models have been worked out to explain experimental dependence observed. To perform ordered macrofore formaion for p-type silicon, various kinds of mask patterns to make initial KOH etch pits were used. In order to understand the roles played by the kinds of etching solution in the formation of pillar arrays, we have undertaken a systematic study of the solvent effects in mixtures of HF, N-dimethylformamide (DMF), iso-propanol, and mixtures of HF with water on the macrofore structure formation on monocrystalline p-type silicon with a resistivity varying between 10 ~ 0.01 $\Omega$ cm. The etching solution including the iso-propanol produced a best three dimensional pillar structures. The experimental results are discussed on the base of Lehmann's comprehensive model based on SCR width.

• Journal of Digital Convergence
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• v.12 no.3
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• pp.367-375
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• 2014

In this thesis we observe microvascular structure in mice by using micro-computed tomography (CT), which is high-resolution X-ray imaging equipment that can acquire Real-time dynamic image, and it aims to investigate the usefulness of micro-CT developed by Institute for Radiological Imaging Science Wonkwang University School of Medicine. After acquiring the systemic images of rats, contrast-enhanced 3D images of vascular structures could be acquired by using Maximum Intensity Projection (MIP) and Volume Rending Technique (VRT), This was divided into each vascular system of head, abdomen and heart and systemic vascular system.

• Journal of Adhesion and Interface
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• v.18 no.2
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• pp.68-74
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• 2017

Epoxy resins are widely used in various fields due to their excellent thermal, mechanical and chemical properties. In order to improve the mechanical properties of the epoxy composition after curing, various materials are mixed in the epoxy resin. Among the nano materials, CNT is the most widely used. However, CNT has limitations in terms of manufacturing process and manufacturing cost. Therefore, there is a growing interest in naturally occurring HNTs having similar structure to that of CNT. In this study, the thermal and mechanical properties of epoxy compositions containing HNTs treated with two types of silane compounds were investigated. The mechanical properties of silane-treated HNT were measured by using a universal testing machine. The differential scanning calorimeter (DSC), thermogravimetric analysis (TGA), and thermomechanical analysis (TMA) were used to measure thermal properties. As a result of the above tests, when the HNT was surface-treated with aminosilane, the tensile strength of the epoxy composition containing the HNT was higher than that of the epoxy composition containing epoxy silane treated HNT. The linear thermal expansion coefficients (CTE) obtained from the thermomechanical analysis of the two epoxy compositions for the comparison of dimensional stability showed that the HNT composition treated with aminosilane showed a lower value of CTE than that of epoxy composition including the pristine HNT.

• Journal of the Computational Structural Engineering Institute of Korea
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• v.25 no.4
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• pp.315-321
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• 2012

In this study, a sequential multiscale homogenization method to characterize the effective thermal conductivity of nano particulate polymer nanocomposites is proposed through a molecular dynamics(MD) simulations and a finite element-based homogenization method. The thermal conductivity of the nanocomposites embedding different-sized nanoparticles at a fixed volume fraction of 5.8% are obtained from MD simulations. Due to the Kapitza thermal resistance, the thermal conductivity of the nanocomposites decreases as the size of the embedded nanoparticle decreases. In order to describe the nanoparticle size effect using the homogenization method with accuracy, the Kapitza interface in which the temperature discontinuity condition appears and the effective interphase zone formed by highly densified matrix polymer are modeled as independent phases that constitutes the nanocomposites microstructure, thus, the overall nanocomposites domain is modeled as a four-phase structure consists of the nanoparticle, Kapitza interface, effective interphase, and polymer matrix. The thermal conductivity of the effective interphase is inversely predicted from the thermal conductivity of the nanocomposites through the multiscale homogenization method, then, exponentially fitted to a function of the particle radius. Using the multiscale homogenization method, the thermal conductivities of the nanocomposites at various particle radii and volume fractions are obtained, and parametric studies are conducted to examine the effect of the effective interphase on the overall thermal conductivity of the nanocomposites.

• Journal of the Computational Structural Engineering Institute of Korea
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• v.31 no.4
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• pp.173-181
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• 2018

Recently composite materials have dominated most engineering fields, owing to their better performance, increased durability and flexibility to be customized and designed for a specific required property. This has given them unprecedented superiority over conventional materials. With the help of the ever increasing computational capabilities of computers, researchers have been trying to develop accurate material models for the complex and integrated properties of these composites. This has led to advances in virtual testing of composite materials as a supplement or a possible replacement of laboratory experiments to predict the properties and responses of composite materials and structures. This paper presents a review on the complex multi-scale modelling framework of the virtual testing machines, which involve computational mechanics at various length-scales starting with nano-mechanics and ending in structure level computational mechanics, with a homogenization technique used to link the different length scales. In addition, the paper presents the features of some of the biggest integrated virtual testing machines developed for study of concrete, including a multiscale modeling scheme for the simulation of the constitutive properties of nanocomposites. Finally, the current challenges and future development potentials for virtual test machines are discussed.

• Polymer(Korea)
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• v.37 no.1
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• pp.5-14
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• 2013

In this paper the effect of UV (ultraviolet) exposure on HDPE (high density polyethylene)-smooth and f-PP (flexible polypropylene) geomembranes is evaluated under UVB-313 (ultraviolet wavelength 290-315 nm) exposure. Tensile property, melt flow index (MFI), oxidation induction time (OIT), both standard-OIT and high pressure-OIT and Fourier transform infrared spectroscopy/attenuated total reflectance (FTIR/ATR) results are discussed. Although tensile properties of the exposed geomembrane samples remained unchanged, the depletion of antioxidants was found higher for f-PP than for HDPE geomembrane. Arrhenius model by extrapolation was used on the data to predict the antioxidant lifetime to a typical site temperature of $20^{\circ}C$. There was no significant difference between the MFI value of the virgin and UV exposed HDPE geomembrane samples but a decrease in MFI was found in f-PP geomembrane that signifies that crosslinking has occurred. From FTIR spectra, the small peak (near $1750\;cm^{-1}$) observed in the spectrum of UV exposed sample corresponds to a carbonyl (C=O) linkage, which suggests that oxidation has occurred in the polymer structure, and another new band for f-PP between 3100 and $3500\;cm^{-1}$ is attributed to a hydroxyl bond and/or hydroperoxide bond.