• Journal of the Korea Academia-Industrial cooperation Society
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• v.6 no.6
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• pp.457-460
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• 2005

Nano-sized titanium oxide and zirconium oxide powders were synthesized by hydrolysis of titanium isopropoxide $[Ti(OC_3H7)_4]$ and zirconium tetrachloride ($ZrC1_4$) via a sol-gel technique. Lead titanate powders were prepared by mixing $TiO_2$ precursors with PbO slurry made with dilute $NH_4OH$. Lead zirconate titanate powders were, then, synthesized by mixing $PbTiO_3$ with $ZrO_2$ powders. The goal of this research was to obtain the $PbZrTiO_3(PZT)$ powders and sintering these powders at low temperature. The $PbTiO_3$ and PZT powders after firing were analyzed by X-ray diffraction(XRD) and transmission electron microscopy(TEM) was utilized to observe the shape and size of the synthesized nano-particles. In the XRD pattern, the well-crystallized PZT phase could be obtained in consequence of firing at $900^{\circ}C$. SEM micrographs also showed that grains of PZT were relatively well grown with the size of the range of $2{\~}4{\mu}m$. The densified perovskite structure of $PbZrTiO_3$ could be obtained by sintering at temperature as low as $900^{\circ}C$. Characterization of the samples showed improved piezoelectric properties.

• Journal of the Korean Ceramic Society
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• v.40 no.1
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• pp.87-92
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• 2003

$Ti_3AlC_2$was synthesized from TiCx and Al powder as a starting materials at the temperature range between$800^{circ}C;and;1500^{\circ}C$. The vacuum sintering and hot pressing methods were imployed to synthesize$Ti_3AlC_2$. The high purity$Ti_3AlC_2$was synthesized using TiCx and Al powder as starting materials without formation of Ti-Al intermetallic compound and Al-C compound.$Ti_2$AlC and$Ti_3AlC_2$were preferentially synthesized at$800^{\circ}C$and above$1200^{\circ}C$, respectively.$Ti_2$AlC formed at low temperature was transformed to$Ti_3AlC_2$by further reaction with TiC. In this study, the synthesis mechanism for$Ti_3AlC_2$was proposed. The synthesized$Ti_3AlC_2$showed the nano laminating structure consisting of$Ti_3AlC_2$crystal with the thickness of 45~120 nm.

• Corrosion Science and Technology
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• v.8 no.4
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• pp.162-169
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• 2009

Pure titanium and its alloys are drastically used in implant materials due to their excellent mechanical properties, high corrosion resistance and good biocompatibility. However, the widely used Ti-6Al-4V is found to release toxic ions (Al and V) into the body, leading to undesirable long-term effects. Ti-6Al-4V has much higher elastic modulus than cortical bone. Therefore, titanium alloys with low elastic modulus have been developed as biomaterials to minimize stress shielding. For this reason, Ti-30Ta-xZr alloy systems have been studied in this study. The Ti-30Ta containing Zr(5, 10 and 15 wt%) were 10 times melted to improve chemical homogeneity by using a vacuum furnace and then homogenized for 24 hrs at $1000^{\circ}C$. The specimens were cut and polished for corrosion test and Ti coating and then coated with TiN, respectively, by using DC magnetron sputtering method. The analyses of coated surface were carried out by field emission scanning electron microscope(FE-SEM). The electrochemical characteristics were examined using potentiodynamic (- 1500 mV~+ 2000 mV) and AC impedance spectroscopy(100 kHz~10 mHz) in 0.9% NaCl solution at $36.5{\pm}1^{\circ}C$. The equiaxed structure was changed to needle-like structure with increasing Zr content. The surface defects and structures were covered with TiN/Ti coated layer. From the polarization behavior in 0.9% NaCl solution, The corrosion current density of Ti-30Ta-xZr alloys decreased as Zr content increased, whereas, the corrosion potential of Ti-30Ta-xZr alloys increased as Zr content increased. The corrosion resistance of TiN/Ti-coated Ti-30Ta-xZr alloys were higher than that of the TiN-coated Ti-30Ta-xZr alloys. From the AC impedance in 0.9% NaCl solution, polarization resistance($R_p$) value of TiN/Ti coated Ti-30Ta-xZr alloys showed higher than that of TiN-coated Ti-30Ta-xZr alloys.

• Journal of the Korean Vacuum Society
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• v.19 no.3
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• pp.217-223
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• 2010

We grew multi-stacked InAs/$In_{0.1}Ga_{0.9}As$ DWELL (dot-in-a-well) structure by metal organic chemical vapor deposition and investigated optical properties by photoluminescence and I-V characteristics by dark current measurement. When stacking InAs quantum dots (QDs) with same growth parameter, the size and density of QDs were changed, resulting in the bimodal emission peak. By decreasing the flow rate of TMIn, we achieved the uniform multi-stacked QD structure which had the single emission peak and high PL intensity. As the growth temperature of n-type GaAs top contact layer (TCL) is above $600^{\circ}C$, the PL intensity severely decreased and dark current level increased. At bias of 0.5 V, the activation energy for temperature dependence of dark current decreased from 106 meV to 48 meV with increasing the growth temperature of n-type GaAs TCL from 580 to $650^{\circ}C$. This suggest that the thermal escape of bounded electrons and non-radiative transition become dominant due to the thermal inter-diffusion at the interface between InAs QDs and $In_{0.1}Ga_{0.9}As$ well layer.

• Resources Recycling
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• v.25 no.6
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• pp.41-49
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• 2016

The present study was intended to prepare cobalt oxide ($Co_3O_4$) powder of average particle size 50 nm or less by spray pyrolysis reaction using the raw cobalt chloride ($CoCl_2$) solution, in order to identify the change in the nature of the particles according to the change in the nozzle tip size. When the nozzle tip was 1 mm, it turned out that most of the droplets were spherical and the surface showed very tight structure. The average particle size of the finally formed particles was 20-30 nm. When the nozzle tip size was 2 mm, some of the droplets formed were spherical, but a considerable part of them showed severely disrupted form. particles formed showed an average particle size of 30 - 40 nm. For the nozzle tip size of 5 mm, spherical droplets were almost non-existent and most were in badly fragmented state. The tightness of surface structure of the droplets has greatly been reduced compared with other nozzle tip sizes. Average size of the formed particles was about 25 nm. As the nozzle tip size increased from 1 mm to 2 mm and 3 mm, the intensities of the XRD peaks have changed little, but significantly been reduced when the nozzle tip size increased to 5mm. As the nozzle tip size increased from 1 mm to 2 mm, the specific surface area of the particles decreased, but the nozzle tip size increased to 5mm, the specific surface area remarkably increased.

• Korean Journal of Optics and Photonics
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• v.20 no.4
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• pp.211-216
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• 2009

Much research into two-dimensional (2-D) photonic crystal (PC) structures has been conducted for realization of ultrasmall optical integrated circuits. A 2-D silicon (Si) PC slab structure with air cladding (n=1) is one of the representative structures in 2-D PCs. While air-clad Si PC slab structures have good optical characteristics, their suspension in air can lead to mechanical weakness, making integration with some optical devices difficult. In this paper, we propose improving the mechanical robustness of PC structure by developing a 2-D Si PC structure with symmetric silica cladding (n=1.44) and comparing its optical properties to that of the air-clad structure. First, we investigate the optical properties of a 2-D Si PC slab structure with air cladding by using a 3-D finite difference time domain method. We determined that a photonic bandgap of 330 nm and a non-leaky propagating bandwidth of 100 nm in the optical communication range are possible. Next, we investigate the optical properties of 2-D Si PC slab structures with silica cladding. Even though the refractive index of the silica cladding is higher than that of air, we developed a silica-clad structure with good optical properties: a photonic band gap of approximately 230 nm and a non-leaky propagating bandwidth of 90 nm, comparable to that of the air-clad PC structures.

• Journal of the Korean Magnetics Society
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• v.11 no.5
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• pp.184-188
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• 2001

Using a DC-sputter and changing the substrate temperature to room temperature and 200$\^{C}$, we manufactured each Co-22%Cr alloy thin-films, which has a uniform micro-structure at room temperature, and a fine self-organized nato structure (SONS) at the inside of the grain at the elevated temperature. We also investigated the microstructure and domain structure using a transmission electron microscope (TEM) and a magnetic force microscope (MFM). We managed to corrode selectively Co-enriched phase, then investigate the microstructure using a TEM. We found that it has a uniform composition when it is manufactured at room temperature, but, we found that it has a unique microstructure, which has a plate-like fine Co-enriched phase, with the formation of SONS at the inside of the grain at the elevated temperature. In MFM characterization, we found maze-type domains at the period of 5000 when the substrate temperature maintains at room temperature. We define that the maze-type domain has a disadvantage at the high density recording because it generates noises easily as the exchange coupling energy between the grains is big. On the other hand, there is only a fine domain structure at the period of 500 when the substrate temperature maintains at 200 $\^{C}$. We define that the fine domain structure has an advantage at the high density magnetic recording because it has thermal stability due to small exchange coupling energy.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.153-153
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• 2010

Recently, to develop GaN-based light-emitting diodes (LEDs) with better performances, various approaches have been suggested by many research groups. In particular, using the patterned sapphire substrate technique has shown the improvement in both internal quantum efficiency and light extraction properties of GaN-based LEDs. In this paper, we discuss the influences of the direction of the hexagonal-structure arrays of lens-shaped patterns (HSAPs) formed on sapphire substrates on the crystal, optical, and electrical properties of InGaN/GaN multi-quantum-well (MQW) LEDs. The basic direction of the HSAPs is normal (HSAPN) with respect to the primary flat zone of a c-plane sapphire substrate. Another HSAP tilted by 30o (HSAP30) from the HSAPN structure was used to investigate the effects of the pattern direction. The full width at half maximums (FWHMs) of the double-crystal x-ray diffraction (DCXRD) spectrum for the (0002) and (1-102) planes of the HSAPN are 320.4 and 381.6 arcsecs., respectively, which are relatively narrower compared to those of the HSP30. The photoluminescence intensity for the HSAPN structure was ~1.2 times stronger than that for the HSAP30. From the electroluminescence (EL) measurements, the intensity for both structures are almost similar. In addition, the effects of the area of the individual lens pattern consisting of the hexagonal-structure arrays are discussed using the concept of the planar area fraction (PAF) defined as the following equation; PAF = [1-(patterns area/total unit areas)] For the relatively small PAF region up to 0.494, the influences of the HSAP direction on the LED characteristics were significant. However, the direction effects of the HSAP became small with increasing the PAF.

• Journal of the Korean institute of surface engineering
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• v.38 no.2
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• pp.65-68
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• 2005

The effect of crystal orientation and microstructure on the mechanical properties of $TaN_x$ was investigated. $TaN_x$ films were grown on $SiO_2$ substrates by ultrahigh vacuum unbalanced magnetron sputter deposition in mixed $Ar/N_2$ discharges at 20 mTorr (2.67 Pa) and at $350^{\circ}C$. Unlike the Ti-N system, in which TiN is the terminal phase, a large number of N-rich phases in the Ta-N system could lead to layers which had nano-sized lamella structure of coherent cubic and hexagonal phases, with a correct choice of nitrogen fraction in the sputtering mixture and ion irradiation energy during growth. The preferred orientations and the micro-structure of $TaN_x$ layers were controlled by varing incident ion energy $E_i\;(=30eV\~50eV)$ and nitrogen fractions $f_{N2}\;(=0.1\~0.15)$. $TaN_x$ layers were grown on (0002)-Ti underlayer as a crystallographic template in order to relieve the stress on the films. The structure of the $TaN_x$ film transformed from Bl-NaCl $\delta-TaN_x$ to lamellar structured Bl-NaCl $\delta-TaN_x$ + hexagonal $\varepsilon-TaN_x$ or Bl-NaCl $\delta-TaN_x$ + hexagonal $\gamma-TaN_x$ with increasing the ion energy at the same nitrogen fraction $f_{N2}$. The hardness of the films also increased by the structural change. At the nitrogen fraction of $0.1\~0.125$, the structure of the $TaN_x$ films was changed from $\delta-TaN_x\;+\;\varepsilon-TaN_x\;to\;\delta-TaN_x\;+\;\gamma-TaN_x$ with increasing the ion energy. However, at the nitrogen fraction of 0.15 the film structure did not change from $\delta-TaN_x\;+\;\varepsilon-TaN_x$ over the whole range of the applied ion energy. The hardness increased significantly from 21.1 GPa to 45.5 GPa with increasing the ion energy.

• Journal of Korea Port Economic Association
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• v.25 no.4
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• pp.107-130
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• 2009

Future of Busan New Port may depend even on the efficient use of the port hinterland. Accordingly, selection of which industry according to which standard in the port hinterland is another task. In order to solve this problem, it analyzed the structure in international division of labor with China and Japan, which are possessing considerable portion in the trading volume with our country, and the export-import structure of Busan Port against China and Japan, by using RCA index and GL index as well as export-import results. In addition to this, the proper industry was selected on the basis of 10 strategic industries for development in Busan. According to the analytical results, the industries, which will be induced in the hinterland of Busan New Port, include textile clothing, pulp printing matter, jewelry, basic metal nonmetallic product, machine lectric product, automobile, shipbuilding, optics accurate machinery medical treatment musical instrument, nano material, fuel battery, aerospace and intelligent robot.