• Korean Journal of Materials Research
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• v.25 no.12
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• pp.659-665
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• 2015

The self-propagating high temperature synthesis approach was applied to synthesize amorphous boron nano-powders in argon atmospheres. For this purpose, we investigated the characteristics of a thermally induced combustion wave in the $B_2O_3+{\alpha}Mg$ system(${\alpha}=1.0-8.0$) in an argon atmospheres. In this study, the exothermic nature of the $B_2O_3-Mg$ reaction was investigated using thermodynamic calculations. Experimental study was conducted based on the calculation data and the SHS products consisting of crystalline boron and other compounds were obtained starting with a different initial molar ratio of Mg. It was found that the $B_2O_3$ and Mg reaction system produced a high combustion temperature with a rapid combustion reaction. In order to regulate the combustion reaction, NaCl, $Na_2B_4O_7$ and $H_3BO_3$ additives were investigated as diluents. In an experimental study, it was found that all diluents effectively stabilized the reaction regime. The final product of the $B_2O_3+{\alpha}Mg$ system with 0.5 mole $Na_2B_4O_7$ was identified to be amorphous boron nano-powders(< 100 nm).

• Journal of Powder Materials
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• v.24 no.4
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• pp.292-297
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• 2017

A metallic oxide layer of a heat-resistant element contributes to the high-temperature oxidation resistance by delaying the oxidation and has a positive effect on the increase in electrical resistivity. In this study, green compacts of Fecralloy powder mixed with amorphous and crystalline silica are oxidized at $950^{\circ}C$ for up to 210 h in order to evaluate the effect of metal oxide on the oxidation and electrical resistivity. The weight change ratio increases as per a parabolic law, and the increase is larger than that observed for Fecralloy owing to the formation of Fe-Si, Fe-Cr composite oxide, and $Al_2O_3$ upon the addition of Si oxide. Si oxides promote the formation of $Al_2O_3$ and Cr oxide at the grain boundary, and obstruct neck formation and the growth of Fecralloy particles to ensure stable electrical resistivity.

• Korean Journal of Materials Research
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• v.15 no.12
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• pp.796-801
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• 2005

In order to reduce the weight of glass in architecture, automobile, bottles, displays, a new technique that can strengthen glass was developed using various method. Generally, the strength achieved of glass-ceramics is higher as is 1.he fracture toughness by the formation of a crystalline phase inside glass. In this study, $70SiO_2-20Na_2O-10CaO-10TiO_2$ glasses were irradiated to strengthen by heterogeneous phase using femto-second laser pulse. Laser pulse irradiation of samples was analyzed by DTA, TMA, XRD, nano-indenter and SEM. Samples irradiated by laser had lower value$(3\~4\times10^{-3}Pa)$ of nano indentation which related with mother glass$(8\times10-3Pa)$ than values. Microcracks were occurred around laser irradiation area when femtosecond laser with the repetition rate of 1kHz was used as the light source to induced heterogeneous phase.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.77-77
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• 2016

Thin films synthesized by plasma processes have been widely applied in a variety of industrial sectors. The structure control of thin film is one of prime factor in most of these applications. It is well known that the structure of this film is closely associated with plasma parameters and species of plasma which are electrons, ions, radical and neutrals in plasma processes. However the precise control of structure by plasma process is still limited due to inherent complexity, reproducibility and control problems in practical implementation of plasma processing. Therefore the study on the fundamental physical properties that govern the plasmas becomes more crucial for molecular scale control of film structure and corresponding properties for new generation nano scale film materials development and application. The thin films are formed through nucleation and growth stages during thin film depostion. Such stages involve adsorption, surface diffusion, chemical binding and other atomic processes at surfaces. This requires identification, determination and quantification of the surface activity of the species in the plasma. Specifically, the ions and neutrals have kinetic energies ranging from ~ thermal up to tens of eV, which are generated by electron impact of the polyatomic precursor, gas phase reaction, and interactions with the substrate and reactor walls. The present work highlights these aspects for the controlled and low-temperature plasma enhanced chemical vapour disposition (PECVD) of Si-based films like crystalline Si (c-Si), Si-quantum dot, and sputtered crystalline C by the design and control of radicals, plasmas and the deposition energy. Additionally, there is growing demand on the low-temperature deposition process with low hydrogen content by PECVD. The deposition temperature can be reduced significantly by utilizing alternative plasma concepts to lower the reaction activation energy. Evolution in this area continues and has recently produced solutions by increasing the plasma excitation frequency from radio frequency to ultra high frequency (UHF) and in the range of microwave. In this sense, the necessity of dedicated experimental studies, diagnostics and computer modelling of process plasmas to quantify the effect of the unique chemistry and structure of the growing film by radical and plasma control is realized. Different low-temperature PECVD processes using RF, UHF, and RF/UHF hybrid plasmas along with magnetron sputtering plasmas are investigated using numerous diagnostics and film analysis tools. The broad outlook of this work also outlines some of the 'Grand Scientific Challenges' to which significant contributions from plasma nanoscience-related research can be foreseen.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.33 no.2
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• pp.45-53
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• 2023

The growth of Si on 4H-SiC substrate has a wide range of applications as a very useful material in power semiconductors, bipolar junction transistors and optoelectronics. However, it is considerably difficult to grow very fine crystalline Si on 4H-SiC owing to the lattice mismatch of approximately 20 % between Si and 4H-SiC. In this paper, we report the growth of a Si epilayer by an Al-related nanostructure cluster grown on a 4H-SiC substrate using a mixed-source hydride vapor phase epitaxy (HVPE) method. In order to grow hexagonal Si on the 4H-SIC substrate, we observed the process in which an Al-related nanostructure cluster was first formed and an epitaxial layer was formed by absorbing Si atoms. From the FE-SEM and Raman spectrum results of the Al-related nanostructure cluster and the hexagonal Si epitaxial layer, it was considered that the hexagonal Si epitaxial layer had different characteristics from the general cubic Si structure.

• Journal of Korean Ophthalmic Optics Society
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• v.13 no.3
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• pp.73-77
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• 2008

Purpose: This research is that prepare amorphous or crystalline ZnO thin films with pure strong UV emission on soda-lime-silica glass (SLSG) substrates by low-temperature annealing. Methods: Growth characteristic and optical properties of the amorphous or nano-crystalline ZnO thin films prepared on soda - lime - silica glass substrates by chemical solution deposition at 100, 150, 200, 250 and $300^{\circ}C$ were investigated using X-ray diffraction analysis, ultraviolet - visible - near infrared spectrophotometer, and photoluminescence. Results: The films exhibited an amorphous pattern even when finally annealed at $100^{\circ}C{\sim}200^{\circ}C$ for 60 min, while crystalline ZnO was obtained by prefiring at 250 and $300^{\circ}C$. The photoluminescence spectrum of amorphous ZnO films shows a strong NBE emission, while the visible emission is nearly quenched. Conclusions: These results indicate it should be possible to cheaply and easily fabricate ZnO-based optoelectronic devices at low temperature, below $200^{\circ}C$, in the future.

• Journal of the Korean Ceramic Society
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• v.42 no.11 s.282
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• pp.722-728
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• 2005

A wet-chemical route was utilized to obtain nanosized crystalline goethite ($\alpha$-FeOOH) particle, which was known as an oxidation catalyst in reducing carbon monoxide (CO) and dioxine during incineration. A cost-effective $FeSO_4{\cdot}7H_2O$ was used as starting raw material and a successive process of hydrolysis-oxidation was utilized as synthetic method. The effects of the initial $Fe^{2+}$ concentration, hydrolysis time and oxidation period on the crystalline phase and particle characteristics were systematically investigated by X-Ray Diffraction (XRD), Scanning Electron Microscopy (SEM) and BET analyses. It was found that the spindle-shaped crystalline $\alpha$-FeOOH particle with the width of 70 nm and the length of 200 nm could be obtained successfully when the initial concentration of 1.5 M, hydrolysis time of 4h, and oxidation period of 10 h, respectively. In addition, it was observed that the spindle-shaped $\alpha$-FeOOH particle consisted of nano-sized primary crystallites of $30\~50\;nm$, which were de-agglomerated into individual particle and successively re­agglomerated into spherical or irregular-shaped agglomerates beyond certain periods in the hydrolysis and oxidation process.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.1
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• pp.7-11
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• 2010

The reduction of optical losses in mono-crystalline silicon solar cell by surface texturing is a critical step to improve the overall cell efficiency. In this study, we have changed the sub-micrometer structure on the micrometer pyramidal structure by 2-step texturing. The Ag particles were coated on the micrometer pyramid surface in $AgNO_3$ solution, and then the etching with hydrogen fluoride and hydrogen peroxide created even smaller nano-pyramids in these pyramids. As a result, we observed that the changes of size and thickness of nano structure on pyramidal surface were determined by $AgNO_3$ concentration and etching time. Using 2-step texturing, the surface of wafers is etched to resemble the rough surface of a lotus leaf. Lotus surface can reduce average reflectance from 10% to below 3%. This reflectance is less than conventional textured wafer including anti-reflection coating.

• Journal of the Korean Ceramic Society
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• v.51 no.5
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• pp.466-471
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• 2014

Hydrous zirconia particles were prepared from $ZrOCl_2$ aqueous solution using an electro-dialysis [ED] process. For the preparation of $(Zr,Y)(OH)_4$ precipitates, 3 mol% $YCl_3$ was added into $ZrOCl_2$ aqueous solution. During the hydrolysis of 0.5 mol/L $(Zr,Y)OCl_2$ solution at $90^{\circ}C$ a slurry solution was obtained. The ED process was used for the removal of chlorine from the slurry solution. Two kinds of slurry solution were sampled at the beginning and end of the ED process. The morphology of hydrous zirconia particles in the solution was observed using an inverted optical microscope and an FE-SEM. The hydrous zirconia particles were nano-crystalline, and easily coagulated with drying. Yttrium stabilized zirconia [YSZ] powder could be obtained by the calcination of $(Zr,Y)(OH)_4$ precipitates prepared from a $(Zr,Y)OCl_2$ solution by the ED process. The coagulated dry powders were shaped and sintered at $1500^{\circ}C$ for 2 h. The sintered body showed a dense microstructure with uniform grain morphology.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1240_1241
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• 2009

In this paper, sol-gel-spin coated $Pb(ZrTi)O_3$ thin film with $ZrO_2$ buffer-layer and $PbTiO_3$ seed-layer was investigated for vibration MEMS energy harvester to scavenge power from ambient vibration via d33 piezoelectric mode. Piezoelectric thin film deposition techniques on insulating layer is the important key for $d_{33}$ mode of piezoelectric vibration energy harvester. $ZrO_2$ buff-layer was utilized as an insulating layer. $PbTIO_3$ seed-layer was applied as an inter-layer between PZT and $ZrO_2$ layer to improve the crystalline of PZT thin film. The fabricated PZT thin film had a remanent polarization of 5.3uC/$cm^2$ and the coercive field of 60kV/cm. The fabricated energy harvester using PZT thin film with PTO seed-layer generated 1.1uW of electrical power to $2.2M{\Omega}$ of load with $4.4V_{pvp}$ from vibration of 0.39g at 528Hz.