• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.99-99
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• 2013

In this talk, I will present two research works in progress, which are: i) mapping of piezoelectric polarization and associated charge density distribution in the heteroepitaxial InGaN/GaN multi-quantum well (MQW) structure of a light emitting diode (LED) by using inline electron holography and ii) in-situ observation of the polarization switching process of an ferroelectric Pb(Zr1-x,Tix)O3 (PZT) thin film capacitor under an applied electric field in transmission electron microscope (TEM). In the first part, I will show that strain as well as total charge density distributions can be mapped quantitatively across all the functional layers constituting a LED, including n-type GaN, InGaN/GaN MQWs, and p-type GaN with sub-nm spatial resolution (~0.8 nm) by using inline electron holography. The experimentally obtained strain maps were verified by comparison with finite element method simulations and confirmed that not only InGaN QWs (2.5 nm in thickness) but also GaN QBs (10 nm in thickness) in the MQW structure are strained complementary to accommodate the lattice misfit strain. Because of this complementary strain of GaN QBs, the strain gradient and also (piezoelectric) polarization gradient across the MQW changes more steeply than expected, resulting in more polarization charge density at the MQW interfaces than the typically expected value from the spontaneous polarization mismatch alone. By quantitative and comparative analysis of the total charge density map with the polarization charge map, we can clarify what extent of the polarization charges are compensated by the electrons supplied from the n-doped GaN QBs. Comparison with the simulated energy band diagrams with various screening parameters show that only 60% of the net polarization charges are compensated by the electrons from the GaN QBs, which results in the internal field of ~2.0 MV cm-1 across each pair of GaN/InGaN of the MQW structure. In the second part of my talk, I will present in-situ observations of the polarization switching process of a planar Ni/PZT/SrRuO3 capacitor using TEM. We observed the preferential, but asymmetric, nucleation and forward growth of switched c-domains at the PZT/electrode interfaces arising from the built-in electric field beneath each interface. The subsequent sideways growth was inhibited by the depolarization field due to the imperfect charge compensation at the counter electrode and preexisting a-domain walls, leading to asymmetric switching. It was found that the preexisting a-domains split into fine a- and c-domains constituting a $90^{\circ}$ stripe domain pattern during the $180^{\circ}$ polarization switching process, revealing that these domains also actively participated in the out-of-plane polarization switching. The real-time observations uncovered the origin of the switching asymmetry and further clarified the importance of charged domain walls and the interfaces with electrodes in the ferroelectric switching processes.

• 한국재료학회지
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• 제28권7호
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• pp.405-410
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• 2018

TiN and CrN thin films are among the most used coatings in machine and tool steels. TiN and CrN are deposited by arc ion plating(AIP) method. The AIP method inhibits the reaction by depositing a hard, protective coating on the material surface. In this study, the characteristics of multi-layer(TiN/CrN/TiN(TCT), CrN/TiN/CrN(CTC)) are investigated. For comparison, TiN with the same thickness as the multilayer is formed as a single layer and analyzed. Thin films formed as multilayers are well stacked. The characteristics of micro hardness and corrosion resistance are better than those of single layer TiN. The TiN/CrN peak is confirmed because both TCT and CTC are formed of the same component(TiN, CrN), and the phase is first grown in the (111) direction, which is the growth direction. However, the adhesion and abrasion resistance of the multilayer films are somewhat lower.

• Journal of Nutrition and Health
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• 제26권1호
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• pp.76-88
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• 1993

Maternal body weight, skinfold thickness and circumference measurements were examined in 23 lactating women and 10 nonlactating women longitudinally from 1 week to 12 weeks postpartum. The dietary intakes of Korean lactating and nonlactating women were measured by 24-hour recall method and effects of maternal energy intake on body weight change were analyzed by Pearson correlation. The mean daily energy intake of breast-feeding(BF, n=12), combination of breast and formula-feeding (CF, n=11), and formula-feeding (FF, n=10) mothers were 1941kcal, 187kcal and 1727kcal, respectively. A significant decrease in weight was observed at all group. Weight losses at 12 weeks of postpartum in BF, CF and FF motheres were 3.18kg, 3.91kg and 5.15kg respectively. Weight losses increased as calorie intake decreased (${\gamma}$2=0.3803, p<0.05). The skinfold thickness and circumferences on all regions were decreased significantly except triceps and upper arm circumferences. However, there were no significant differences between lactating and nonlactating women. Anthropometric measurements decreased at the trunk but not at the limbs. Weight change was significantly correlated with changes of the scores for proximal circumference (${\gamma}$2=0.4999, p<0.05). There results suggest that lactation does not promete weight loss in well-nourished women and that the Korean RDA for energy in lactation may be too high.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.350-350
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• 2010

Silicon carbide (SiC), one of the well known wide band gap semiconductors, shows high thermal conductivities, chemical inertness and breakdown energies. The design of normally-off 4H-SiC VJFETs [1] has been reported and 4H-SiC VJFETs with different lateral JFET channel opening dimensions have been studied [2]. In this work, 4H-SiC based VJFETs has been designed using the device simulator (ATLAS, Silvaco Data System, Inc). We varied the n-epi layer thickness (from $6\;{\mu}m$ to $10\;{\mu}m$) and the channel width (from $0.9\;{\mu}m$ to $1.2\;{\mu}m$), and investigated the static characteristics as blocking voltages, threshold voltages, on-resistances. We have shown that silicon carbide JFET structures of highly intensified blocking voltages with optimized figures of merit can thus be achieved by adjusting the epi layer thickness and channel width.

• 한국물환경학회지
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• 제27권3호
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• pp.300-305
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• 2011

This study aimed at analyzing the runoff quality by the layer thickness and material of soil roof to make best use of the rainwater falling on it in terms of safety and efficiency and resulted in the following assessments. It turned out that the concentrations decreased more in T-N, $NO_3$-N, $NH_4$-N, T-P and $PO_4$-P in roof rainwater except 30 cm for the RW1 soil roof after passing through it than those of first rainwater. On the other hand, the concentrations in rainwater passing through gravel roof turned out to be equal or same to those of the first rainwater. As a result of analysis of metallic stuff in runoff, there was no indication of Cd, Cr, Mn and Pb as well. The concentration of Cu, Fe and Zn in rainwater through soil roof became less than that of the first rainwater. In this research, the soil roof showed the good efficiency in lowering the concentration of such components as nitrogen, phosphorus and metals. Based on the results from this work, more practical study would be required further in the future in relation to soil roof when installing the rainwater-utilizing facilities.

• 반도체디스플레이기술학회지
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• 제5권2호
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• pp.1-5
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• 2006

The GaN thin film on the 8 periods InGaN/GaN multi-quantum well structure was grown on the sapphire substrate using metal-organic chemical vapor deposition. The nano-scaled triangular-lattice holes with the diameter of 150 nm were patterned on a polymethylmethacrylate blocking film using an electron beam nano-lithography system. The thin slab and two-dimensional photonic crystals with the thickness of 28 nm were fabricated on the GaN layer for the blue light diffraction sources. The photonic crystal with the lattice parameter of 460 nm enhances spectral intensity of photoluminescence indicating that the photonic crystals provides the source of nano-diffraction for the blue light of the 450-nm wavelength.

• Tribology and Lubricants
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• 제8권1호
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• pp.63-69
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• 1992

In order to gain better understanding of wear behaviors of TiN-coated boron cast iron, tests and analyses were conducted with block-on disc type tribometer. TiN layer of thickness $2 \mu m$ and $4 \mu m$, coated by cathodic arc evaporation process, were experimentally investigated with the variation of applied load and sliding speed under dry sliding condition. Wear characteristics were expressed in terms of the three-dimentional wear map as well as the wear rate vs sliding speed and load. Comparisons of wear and friction characteristics between coated cast irons and uncoated cast irns were also made. Wear mechanism of TiN layer was explained in view of surface interaction between the mating surfaces. The thicker coating exhibited higher hardness and adhesion strength. the significance of stresses at the surface and in the subsurface was briefly discussed in relation to the wear behavior.

• 한국철도학회:학술대회논문집
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• 한국철도학회 2005년도 추계학술대회 논문집
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• pp.842-847
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• 2005

In recent railroad markets, the use of steel sleepers is gradually increased due to various advantages in resistance for impact as well as economical efficiency for production, construction. maintenance and recycle. The typical steel sleepers which are successfully used in railroad markets are n-type of Corus Inc. in England and Y-type of ThyssenKrupp Gft Gleistechnik in Germany. Both types have merits and demerits in safety and economical efficiency. In 1990, n-type steel sleeper was developed in Korea, but was failed in putting into practical use, due to the subsidence into the ballast by Jive loads and welding crack, etc.. In this paper, in order to develop optimal shape of n-type steel sleepers for domestic rail mads, parametric studies for cross section, thickness, are performed.

• 한국방사선학회논문지
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• 제14권5호
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• pp.545-552
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• 2020

이 연구의 목적은 NCRP 보고서 151과 IAEA 안전 보고서 시리즈 47 기반으로 직접차폐식 도어의 납 두께 계산식을 유도하는 데 있다. 직접차폐식 도어에서 선량률 계산식을 유도한 후, 이 식을 납 차폐 두께 계산식에 대입하여 도어에서 차폐 두께 계산식을 유도하였다. 유도된 직접차폐식 도어의 차폐 두께 계산식으로부터 계산된 납 차폐 두께는 NCRP 및 IAEA 2차 방벽 차폐 두께 계산 방법으로 산출된 두께보다 약 6% 낮았다. 이 결과는 NCRP 및 IAEA 2차 방벽 차폐 두께 계산 방법으로부터 두께 계산이 더 보수적이고 2차 빔 차폐에 잘 맞는다는 의미로 해석된다. 결론적으로, 이 연구에서 유도된 직접차폐식 도어의 납 차폐 두께 계산식은 도어의 차폐 설계에 유용하게 사용될 수 있을 것으로 사료된다.

• 한국해양공학회지
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• 제17권2호
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• pp.34-39
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• 2003

Recent deepwater offshore structures in the Gulf of Mexico utilize butt welded tubular joints. Application of a welded tubular joint includes tendons, production risers, and steel catenary risers. Fatigue life assessment of these joints becomes more critical, as the structures to which they are attached are allowed to undergo cyclic and sometimes large displacements around an anchored position. Estimation of the fatigue behavior of these tubular members in the design stage is generally condrcted by using S-N curves, as specified in the codeds and standards. Applying the stress concentration factor of the welded structure to the S-N approach often results in a very conservative assessment, because the stress field acting on the tubular has a non-uniform distribution through the thickness. Fatigue life analysis using fracture mechanics has been applied in the design of the catenary risers. This technology enables the engineer to establish proper requirements on weld quality and inspection acceptance criteria to assure satisfactory structural integrity during its design life. It also provides guidance on proper design curves and a methodology for accounting for the effects of non-uniform stress distribution through the wall thickness. Still, there is inconsistency when designing tubular joints using a conventional S-N approach and when specifying weld flaw acceptance criteria using fracture mechanics approach. This study developed fatigue curves that are consistent with both the S-N approach and the fracture mechanics approach. Accounting for non-uniform stress distribution and threshold stress intensity factor were key parameters in relating both approaches. A series of S-N curves, generated from the fracture mechanics approach, were compared to the existing S-N curves. For flat plate butt joint, the S-N curve generated from fracture mechanics matches with the IIW class 100 curve when initial crack depth was 0.5 mm (0.02 ). The new curves for tubular joint agree very well with the experimental results. The comparison also indicated the degree of conservatism built into the API X design curve.