• Applied Science and Convergence Technology
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• 제23권4호
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• pp.192-199
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• 2014

The electronic property of graphene was investigated by hydrazine treatment. Hydrazine ($N_2H_4$) highly increases electron concentrations and up-shifts Fermi level of graphene based on significant shift of Dirac point to the negative gate voltage. We have observed contact resistance and channel length dependent mobility of graphene in the back-gated device after hydrazine monohydrate treatment and continuously monitored electrical characteristics under Nitrogen or air exposure. The contact resistance increases with hydrazine-treated and subsequent Nitrogen-exposed devices and reduces down in successive Air-exposed device to the similar level of pristine one. The channel conductance curve as a function of gate voltage in hole conduction regime keeps analogous value and shape even after Nitrogen/Air exposure specially whereas, in electron conduction regime change rate of conductance along with the level of conductance with gate voltage are decreased. Hydrazine could be utilized as the highly effective donor without degradation of mobility but the stability issue to be solved for future application.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.171-171
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• 2012

Neutral beam assisted chemical vapor deposition (NBa-CVD) process has been developed as a nove,l room temperature deposition process for the light-soaking free nano-crystalline silicon (nc-Si) thin films including intrinsic and n-type doped thin film. During formation of nc-Si thin films by the NBa-CVD process with silicon reflector at room temperature, the energetic particles enhance doping efficiency and crystalline phase in nc-Si thin films without additional heating at substrate. The effects of incident NB energy controlled by the reflector bias have been confirmed by Raman spectra analysis. Additionally, TEM images show uniform nc-Si grains which imbedded amorphous phase without incubation layer. The nc-Si films by the NBa-CVD are hardly degenerated by light soaking; the degradations of photoconductivity were just a few percents before and after light irradiation.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.101-101
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• 2011

투명전도성산화물(transparent conducting oxides, TCOs) 박막으로써 널리 쓰이는 산화인듐주석(indium tin oxide, ITO)은 전기 전도성과 광 투과성이 우수하여 주로 유기발광다이오드(organic light-emitting diode, OLED)의 전극, 발광다이오드(light-emitting diode, LED)의 current spreading 층 및 태양전지(solar cell)의 윈도우층(window layer) 등의 광전자 소자로 응용되고 있으나, 고가의 indium 가격과 인체에 유해한 독성 등이 문제점으로 지적되고 있다. 따라서 indium의 함량을 저감한 새로운 조성의 TCO 또는 indium을 함유하지 않은 친환경적인 TCO 대체 재료 개발의 필요성이 증대되고 있다. 이러한 재료 중 하나인 AZO (Al-doped zinc oxide, $Al_2O_3$: 2 wt.%)는 3.82eV의 넓은 에너지 밴드갭을 가지며, 가시광선 및 근 적외선 파장 영역에 대하여 90% 이상의 높은 투과율을 나타낸다. 또한, 습식식각이 가능하며, 매우 풍부하여 원가가 매우 저렴하고, 독성이 없다. 본 연구에서는 박막 증착율이 높고, 제작과정의 조정이 용이한 RF magnetron 스퍼터를 이용하여 glass 기판 위에 AZO 박막을 성장하고, $N_2$ 분위기에서 다양한 온도 조건에서 열처리(rapid thermal annealing, RTA)하여 전기 및 광학적 특성에 대하여 비교 분석하였다. 또한, 이후에 기존의 성장방법과 달리 고가의 진공 장비를 사용하지 않고, 저온에서도 간단한 구조의 장비를 이용하여 균일한 나노구조를 성장시킬 수 있는 전기화학증착법(electrochemical deposition)으로 AZO 박막위에 ZnO 나노로드를 다양한 성장조건에 따라 성장시켜 광학적 특성을 비교 분석하였다.

• 한국재료학회지
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• 제13권6호
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• pp.398-403
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• 2003

Shallow $p^{＋}$ n junction was formed using a ULE(ultra low energy) implanter. Deactivation phenomena were investigated for the shallow source/drain junction based on measurements of post-annealing time and temperature following the rapid thermal annealing(RTA) treatments. We found that deactivation kinetics has two regimes such that the amount of deactivation increases exponentially with annealing temperature up to $850^{\circ}C$ and that it decreases linearly with the annealing temperature beyond that temperature. We believe that the first regime is kinetically limited while the second one is thermodynamically limited. We also observed "transient enhanced deactivation", an anomalous increase in sheet resistance during the early stage of annealing at temperatures higher than X$/^{\circ}C$. Activation energy for transient enhanced deactivation was measured to be 1.75-1.87 eV range, while that for normal deactivation was found to be between 3.49-3.69 eV.

• 한국전기전자재료학회논문지
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• 제19권8호
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• pp.707-711
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• 2006

ZnO was doped up to 0.3 wt% for improving the electrical properties of lead-free $[Li_{0.04}(Na_{0.44}Ko_{0.52})-(Nb_{0.86}\;Ta_{0.10}\;Sb_{0.04})]O_3$ piezoelectric ceramics. The ceramics were fabricated with the conventional sintering processes. Crystal structure of the samples was tetragonal phase regardless of ZnO amount. However, the piezoelectric properties were varied with the ZnO amount. The electro-mechanical coupling factor $(k_p)$ was with the ZnO amount up to 0.2 wt% but decreased with the further addition. the maximum value of $k_p$ was 0.475. Density, piezoelectric charge constant and relative dielectric constant was also showed maximum value at 0.2 wt%. The maximum values are $4.75g/cm^3$, 275 pC/N, 1403, respectively. In contrast, the mechanical quality factor $(Q_m)$ was not varied with increasing the ZnO addition up to 0.2 wt% but rapidly increased at 0.3 wt%.

• E2M - 전기 전자와 첨단 소재
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• 제10권8호
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• pp.800-806
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• 1997

The behavior of de levels in rapid thermal annealed Fe-doped semi-insulating InP(100) was studied by photoinduced current transient spectrocopy(PICTS). In bulk InP, T2(Ec-0.24 eV), T3(Ec-0.30 eV) and T5(Ec-0.62 eV) traps were observed. After annealing the T2 trap was annihilated at 20$0^{\circ}C$ and recreated at 35$0^{\circ}C$. T3 trap was not affected below 40$0^{\circ}C$. With increasing temperature the concentration of T5 trap reduced and it was annihilated at 30$0^{\circ}C$. However the T1(Ec-0.16 eV) and T4(Ec-0.42 eV) traps were began to appear at 40$0^{\circ}C$and these concentrations were increased with annealing temperature. The T1 and T4 traps seem to be related to the isolated phosphorus vacancy( $V_{p}$) and $V_{p}$-indium antisite( $V_{p}$- $P_{in}$ ) or $V_{p}$-indium interstitial( $V_{p}$-I $n_{I}$) respectiely.respectiely.

• Transactions on Electrical and Electronic Materials
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• 제6권3호
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• pp.101-105
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• 2005

Electroluminescence(EL) and current-voltage(I-V) characteristics of hybrid EL devices containing Pr and Mn co-doped ZnS nanoparticles were investigated in this study. For the insertion of a hole transport layer of poly (N-vinyl carbazole)(PVK), the current level became lower due to the accumulation of electrons at the interface between PVK and nanoparticles. When both PVK and buffer layer $BaF_2$ were simultaneously introduced, the enhanced EL efficiency and improved I-V characteristics were obtained. This results from the additional increase of hole injection owing to the internal field induced by the significant accumulation of electrons at the interface. The presence of buffer layer $BaF_2$ together with PVK makes it possible the charge accumulation enough to induce the sufficient internal field for further hole injection.

• 한국세라믹학회지
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• 제41권11호
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• pp.826-833
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• 2004

본 연구에서는 PLC 소자용 브래그 격자에 적용되는 재료인 Ge, B 등이 다량 첨가되어 있는 실리카 유리에서 발생하는 감광성(photosensitivity)을 조사하고 감광성의 발현 기구를 연구하였다. 관찰된 굴절률 변화의 최대값은 약 $10^{-3}$ 정도였으며 열처리 과정을 거치기 전후에 이러한 굴절률의 변화 양상이 변화하는 것을 관찰하였다. 이와 같은 굴절률의 변화를 UV 흡수도와 라만 스펙트림을 이용하여 본 연구의 시편에서 발생하는 감광성의 기구를 규명한 결과 굴절률 변화 요인이 유리 내에 존재하는 내부응력과 첨가된 B에 의하여 증대된 고밀화 과정에서 발생하는 현상임을 밝혔다.

• 전자공학회논문지A
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• 제33A권3호
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• pp.126-134
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• 1996

Tungsten silicide films were deposited on the phosphorus-doped poly-Si/SiO$_{2}$/Si-substrates by LPCVD (low pressue chemical vapor deposition). The formation and various properties of tungsten silicide processed by furnace annealing in N$_{2}$ ambient were evaluated by using XRD. AFM, 4-point probe and SEM. And the redistribution of phosphorus atoms has been observed by SIMS. The crystal structure of the as-deposited tungsten silicide films were transformed from the hexagonal to the tetragonal structure upon annealing at 550.deg. C. The surface roughness of tungsten polycide films were found to very smoothly upon annelaing at 850.deg. C and low phosphorus concentration in polysilicon layer. The sheet resistance of tungsten polycide low phosphorus concentration in polysilicon layer. The sheet resistance of tungsten polycide films are measured to be 2.4 .ohm./ㅁafter furnace annealing at 1100.deg. C, 30min. It was found that the sheet resistance of tungsten polycide films upon annealing above 1050.deg. C were independant on the phosphorus concentration of polysilicon layer and furnace annealing times. An out-diffusion of phosphorus impurity through tungsten silicide film after annealing in $O_{2}$ ambient revealed a remarkably low content of dopant by oxide capping.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.353-353
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• 2008

트랜지스터 속도는 현저하게 향상되어지는 반면에 RFICs(RF integrated circuits)는 대용량화, 고속화, 고집적화, 소형화, 고 효율화 온칩(on-chip) 수동소자의 부재에 의해 발전을 이루지 못하였다. 즉, 최근 전자기기의 집적화, 초소형화 됨에 따라 실장 밀도를 높이기 위해 부품의 소형화가 강하게 요구되는 동시에 Radio Frequency(RF)에서 이용가능한 수동소자인 capacitor를 개발하고자 본 논문에서는 손가락 모양(interdigital configuration)을 갖는 RF capacitor를 Ansoft사의 HFSS를 이용하여 이상적인 S-parameter, 정전용랑(capacitance), 손실계수(loss tangent)를 도출하고자 한다. 680um의 $Al_2O_3$ 기판에 BST doped MgO을 30um, Chromium과 gold를 각각 5um로 증착시켰다. 핑거 개수 (n, number), 핑거 길이(1, length), 핑거 간격(g, gap), 핑거 너비(w, width)를 변화 시켜가면서 이상적인 결과 값에 가까운 모양 (interdigital configuration)을 얻을 수 있었다. 핑거 수 3 개 일 때 입력 값에 대하여 손실 없는 출력 값(투과값)을 갖는 $S_{21}$이 1.5GHz에서 6dB이하로 떨어졌으며 핑거 간격이 줄고 핑거 너비가 커지고 핑거길이가 커질수록 높은 캐패시턴스 값을 갖는 것을 확인 할 수 있었다.