• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.209-209
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• 2009

Fabrication of p-type ZnO has already proven difficult and usually inconsistent despite numerous worldwide efforts. Many research groups studied electrical and optical properties P, Li, As, N single doped ZnO thin film. In P-doped ZnO thin film, the reproducibility of p-type conduction with $P_2O_5$ as a dopant source was shown to be relatively poor. In this study, we made P single doped and Li & P co-doped ZnO target. To investigate electrical and optical properties of P single doped and Li & P co-doped ZnO thin film using $P_2O_5$ and $Li_3PO_4$ dopant source respectively was deposited by PLD. The growth temperature was changed 500, $700^{\circ}C$ and various oxygen partial pressure and post-annealing conditions was changed temperature, different gas ambient($O_2,N_2$). We investigate that how to change electrical and optical properties as function of growth temperature, oxygen partial pressure and post-annealing(RTA).

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.315-315
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• 2013

We report the electronic structure modification in the swift heavy ion (SHI) irradiated N-doped ZnO thin films prepared by RF sputtering from ZnO target in different ratio of Ar/$N_2$ gas mixture using highly pure $N_2$ gas. The different N-ZnO thin lms were then irradiated with 120 MeV Ag ion beam with different doses ranging from $1{\times}10^{11}$ to $5{\times}10^{12}$ ions/$cm^2$ and characterized by XRD and near edge X-ray absorption ne structure (NEXAFS) at N and O K-edges. The NEXAFS measurements provide direct evidence of O 2p and Zn 3d orbital hybridization and also the bonding of N ions with Zn and O ions. The minimum value of resistivity of $790{\Omega}cm$, a Hall mobility of $22cm^2V^-1s^-1$ and the carrier concentration of $3.6{\times}10^{14}cm^{-3}$ were yielded at 75% $N_2$. X-ray diffraction (XRD) measurements revealed that N-doped ZnO films had the preferential orientation of (002) plane for all samples, while crystallinity start decreasing at 32.5% $N_2$. The average crystallite size varies from 5.7 to 8.2 nm for 75% and then decreases to 7.8 nm for 80% $Ar:N_2$ ratio.

• 한국재료학회지
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• 제28권11호
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• pp.640-645
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• 2018

The design of non-precious electrocatalysts with low-cost, good stability, and an improved oxygen reduction reaction(ORR) to replace the platinium-based electrocatalyst is significant for application of fuel cells and metal-air batteries with high energy density. In this study, we synthesize iron-carbide($Fe_3C$) embedded nitrogen(N) doped carbon nanofiber(CNF) as electrocatalysts for ORRs using electrospinning, precursor deposition, and carbonization. To optimize electrochemical performance, we study the three stages according to different amounts of iron precursor. Among them, $Fe_3C$-embedded N doped CNF-1 exhibits the most improved electrochemical performance with a high onset potential of -0.18 V, a high $E_{1/2}$ of -0.29 V, and a nearly four-electron pathway (n = 3.77). In addition, $Fe_3C$-embedded N doped CNF-1 displays exellent long-term stabillity with the lowest ${\Delta}E_{1/2}=8mV$ compared to the other electrocatalysts. The improved electrochemical properties are attributed to synergestic effect of N-doping and well-dispersed iron carbide embedded in CNF. Consequently, $Fe_3C$-embedded N doped CNF is a promising candidate for non-precious electrocatalysts for high-performance ORRs.

• 한국섬유공학회:학술대회논문집
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• 한국섬유공학회 2007년도 학술발표회 논문집
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• pp.261-262
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• 2007

• 대한전기학회:학술대회논문집
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• 대한전기학회 2009년도 제40회 하계학술대회
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• pp.1256_1257
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• 2009

We have grown, for the first time to our knowledge, N-doped ZnO thin films on sapphire substrate by employing novel dielectric barrier discharge in pulsed laser deposition (DBD-PLD). DBD guarantees an effective way for massive in-situ generation of N-plasma under the conventional PLD process condition. Low-temperature photoluminescence spectra of the N-doped ZnO film provided near band-edge emission after thermal annealing process. The emission peak was resolved by Gaussian fitting to find a dominant acceptor-bound exciton peak ($A^0X$) that indicates the successful p-type doping of ZnO with N.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1994년도 추계학술대회 논문집
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• pp.97-100
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• 1994

The present paper is devoted to the physical and electrical characteristics of N-docosyl- quinolinium-TCNQ films compared with the films doped with I$_2$. Iodine affects the degree of charge transfer and the conductivity of the films. The UV-visible absorption spectra of the film doped with I$_2$ shows that the peak of I$_3$ which had electronic transition at 300∼350nm and (TCNQ-)$_2$ dimer absorption disappered. The in-plane electrical conductivity of the films doped with I$_2$ were 1.4${\times}$10$\sub$-6/S/cm, which is two orders of magnitude higher conductivity than undoped LB films. The film structural difference between Y and Z-type may cause the conductivity. Another possible reasons of the structural difference was the overlapping TCNQ anion radical in LB films.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.52-52
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• 2011

A novel deposition process for n-type nanocrystalline silicon (n-type nc-Si) thin films at room temperature has been developed by adopting the neutral beam assisted chemical vapor deposition (NBa-CVD). During formation of n-type nc-Si thin film by the NBa-CVD process with silicon reflector electrode at room temperature, the energetic particles could induce enhance doping efficiency and crystalline phase in polymorphous-Si thin films without additional heating on substrate; The dark conductivity and substrate temperature of P-doped polymorphous~nano crystalline silicon thin films increased with increasing the reflector bias. The NB energy heating substrate(but lower than $80^{\circ}C$ and increase doping efficiency. This low temperature processed doped nano-crystalline can address key problem in applications from flexible display backplane thin film transistor to flexible solar cell.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 추계학술대회 논문집
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• pp.44-47
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• 1997

In spite of the addtion of Zn, a high quality of Zn-doped GaN film were prepared. The growth rates of Zn-doped GaN films were varied from 0.14${\mu}{\textrm}{m}$/min to 0.05${\mu}{\textrm}{m}$/min according to the amount of Zn incorporated, The smallest value of the FWHM of x-ray rocking curve was 407 arcsec. The Zn-related Photoluminescence emission peaks which occurred at 2.927 and 2.824 eV shifted toward the low energy region by increasing Zn partial pressures. It was compared between the intensities of D-A pair (3.259eV) and that of the exciton bound to acceptor band(E$_{x-A}$=3.449eV).).

• 공업화학
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• 제29권3호
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• pp.298-302
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• 2018

질소가 도핑된 이산화티타늄의 광촉매 특성을 알아보았다. 질소가 도핑된 이산화티타늄에 대하여 자외선 및 가시광선 분위기에서 메틸렌블루 광촉매 분해를 수행하였다. XPS 분석을 통해 제조한 $TiO_2$에서 질소(N)가 산소(O)와 치환되었음을 확인하였다. UV-Vis DRS 분석 결과 질소가 도핑된 무정형 $TiO_2$ 시료에서는 가시광선을 거의 흡수하지 않고 자외선을 흡수하는 반면 무정형/anatase 혼재 $TiO_2$ 시료의 경우 가시광선 흡수가 상당히 증가하였다. 질소가 도핑된 anatase $TiO_2$ 시료는 자외선 및 가시광선 조사에서 메틸렌블루 광분해 반응이 나타났다. 그러나 가시광선 조사에서 분해율은 자외선 조사의 분해율보다 낮았다. 무정형/anatase 혼재 $TiO_2$ 시료의 경우 자외선과 가시광선 조사에서 anatase $TiO_2$ 시료의 분해율보다 높았다. 이러한 결과는 anatase $TiO_2$ 시료에 비해 3배 정도 큰 무정형/anatase 혼재 $TiO_2$ 시료의 높은 표면적이 질소 도핑된 작은 anatase 입자와 관련이 있음을 보여준다.

• Current Applied Physics
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• 제18권11호
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• pp.1306-1312
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• 2018

The Mn-doped copper nitride ($Cu_3N$) films with Mn concentration of 2.0 at. % have high crystallinity and uniform surface morphology. We found that the as-synthesized Mn-doped $Cu_3N$ films show suitable optical absorption in the visible region and the band gap is ~1.48 eV. A simple photodetector based on Mn doped $Cu_3N$ films was firstly fabricated via magnetron sputtering method. The fabricated device with doping of Mn demonstrated high photocurrent response and fast response shorter than 0.1 s both for rise and decay time superior to the pure $Cu_3N$. Furthermore, the energy levels of Mn-doped Cu3N matched well with ITO and Ag electrode. The excellent photoelectric properties reflect a good balance between sensitivities and response rate. Our investigation reveals the excellent potential of Mn-doped $Cu_3N$ films for application of photodetectors.